TWI652542B - 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 - Google Patents
附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 Download PDFInfo
- Publication number
- TWI652542B TWI652542B TW107112766A TW107112766A TWI652542B TW I652542 B TWI652542 B TW I652542B TW 107112766 A TW107112766 A TW 107112766A TW 107112766 A TW107112766 A TW 107112766A TW I652542 B TWI652542 B TW I652542B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- substrate
- conductive film
- reflective
- multilayer reflective
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 321
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000006096 absorbing agent Substances 0.000 claims description 110
- 230000003746 surface roughness Effects 0.000 claims description 45
- 230000001681 protective effect Effects 0.000 claims description 44
- 238000012546 transfer Methods 0.000 claims description 43
- 238000009826 distribution Methods 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 8
- 238000010586 diagram Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 239000010408 film Substances 0.000 description 676
- 230000007547 defect Effects 0.000 description 140
- 238000007689 inspection Methods 0.000 description 69
- 239000000463 material Substances 0.000 description 60
- 238000005259 measurement Methods 0.000 description 47
- 239000010410 layer Substances 0.000 description 43
- 239000007789 gas Substances 0.000 description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 29
- 239000011521 glass Substances 0.000 description 27
- 238000011156 evaluation Methods 0.000 description 26
- 238000005530 etching Methods 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 24
- 239000011651 chromium Substances 0.000 description 20
- 229910052715 tantalum Inorganic materials 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000001514 detection method Methods 0.000 description 17
- 238000012545 processing Methods 0.000 description 16
- 229910004535 TaBN Inorganic materials 0.000 description 15
- 229910052804 chromium Inorganic materials 0.000 description 15
- 239000000203 mixture Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 238000001659 ion-beam spectroscopy Methods 0.000 description 12
- 238000005498 polishing Methods 0.000 description 12
- 238000005546 reactive sputtering Methods 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000003054 catalyst Substances 0.000 description 9
- 239000000460 chlorine Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000000737 periodic effect Effects 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000005477 sputtering target Methods 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910003071 TaON Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- -1 TaCON Inorganic materials 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000010183 spectrum analysis Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 101150013999 CRBN gene Proteins 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910004162 TaHf Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 229940075614 colloidal silicon dioxide Drugs 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 101150016677 ohgt gene Proteins 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/023—Optical properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/416—Reflective
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2551/00—Optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013202494 | 2013-09-27 | ||
| JP2013-202494 | 2013-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201826009A TW201826009A (zh) | 2018-07-16 |
| TWI652542B true TWI652542B (zh) | 2019-03-01 |
Family
ID=52743232
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107112766A TWI652542B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW105103579A TWI626503B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW103133627A TWI530754B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105103579A TWI626503B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW103133627A TWI530754B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9746762B2 (enExample) |
| JP (3) | JP5729847B2 (enExample) |
| KR (3) | KR102127907B1 (enExample) |
| SG (3) | SG11201509897WA (enExample) |
| TW (3) | TWI652542B (enExample) |
| WO (1) | WO2015046095A1 (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| JP6069609B2 (ja) * | 2015-03-26 | 2017-02-01 | 株式会社リガク | 二重湾曲ｘ線集光素子およびその構成体、二重湾曲ｘ線分光素子およびその構成体の製造方法 |
| JP6815995B2 (ja) * | 2015-06-17 | 2021-01-20 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP6873758B2 (ja) * | 2016-03-28 | 2021-05-19 | Hoya株式会社 | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
| SG11201807712YA (en) * | 2016-03-31 | 2018-10-30 | Hoya Corp | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
| US9870612B2 (en) * | 2016-06-06 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a mask |
| US11187972B2 (en) * | 2016-10-21 | 2021-11-30 | Hoya Corporation | Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device |
| WO2018135467A1 (ja) * | 2017-01-17 | 2018-07-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| CN110383167B (zh) * | 2017-02-27 | 2022-08-23 | Hoya株式会社 | 掩模坯料、转印用掩模的制造方法、以及半导体器件的制造方法 |
| WO2019009212A1 (ja) * | 2017-07-05 | 2019-01-10 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク |
| SG11202011370VA (en) | 2018-05-25 | 2020-12-30 | Hoya Corp | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method |
| TWI829797B (zh) * | 2018-11-07 | 2024-01-21 | 日商Ｈｏｙａ股份有限公司 | 具多層反射膜基板、反射型遮罩基底、反射型遮罩之製造方法以及半導體裝置之製造方法 |
| JP7250511B2 (ja) | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| DE102019100839B4 (de) * | 2019-01-14 | 2024-11-14 | Advanced Mask Technology Center Gmbh & Co. Kg | Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske |
| JP7263872B2 (ja) | 2019-03-25 | 2023-04-25 | 株式会社デンソー | ドリルの製造方法 |
| JP7350571B2 (ja) * | 2019-08-30 | 2023-09-26 | Hoya株式会社 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| JP7271760B2 (ja) * | 2020-03-27 | 2023-05-11 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
| KR102464780B1 (ko) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크 |
| JP7420027B2 (ja) * | 2020-09-10 | 2024-01-23 | 信越化学工業株式会社 | Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク |
| KR20220058424A (ko) * | 2020-10-30 | 2022-05-09 | 에이지씨 가부시키가이샤 | Euvl용 유리 기판, 및 euvl용 마스크 블랭크 |
| US20220137500A1 (en) * | 2020-10-30 | 2022-05-05 | AGC Inc. | Glass substrate for euvl, and mask blank for euvl |
| WO2022176749A1 (ja) * | 2021-02-16 | 2022-08-25 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
| JP7589633B2 (ja) * | 2021-04-19 | 2024-11-26 | Ａｇｃ株式会社 | 多層反射膜付き基板の検査方法、及び反射型マスクブランクの製造方法 |
| JP2025509018A (ja) * | 2022-03-25 | 2025-04-11 | フォトロニクス・インコーポレイテッド | フォトマスク表面処理のためのシステム、方法、及びプログラム製品 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0696434A (ja) * | 1992-07-31 | 1994-04-08 | Sony Corp | 磁気記録媒体及び磁気記録媒体の評価方法 |
| JPH0785463A (ja) * | 1993-09-20 | 1995-03-31 | A G Technol Kk | 磁気ディスク |
| JPH10283626A (ja) * | 1997-02-09 | 1998-10-23 | Hoya Corp | 磁気記録媒体及びその製造方法 |
| JP2002288823A (ja) | 2002-03-14 | 2002-10-04 | Nippon Sheet Glass Co Ltd | 情報記録媒体用基板の製造方法 |
| JP2004199846A (ja) | 2002-10-23 | 2004-07-15 | Nippon Sheet Glass Co Ltd | 磁気記録媒体用ガラス基板及びその製造方法 |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| JP2007272995A (ja) * | 2006-03-31 | 2007-10-18 | Hoya Corp | 磁気ディスク装置および非磁性基板の良否判定方法、磁気ディスク、並びに磁気ディスク装置 |
| WO2008072706A1 (ja) | 2006-12-15 | 2008-06-19 | Asahi Glass Company, Limited | Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板 |
| MY153605A (en) | 2008-06-30 | 2015-02-27 | Hoya Corp | Substrate for magnetic disk and magnetic disk |
| JP5481299B2 (ja) | 2010-07-22 | 2014-04-23 | 矢崎総業株式会社 | 導通検査治具の動作制御構造 |
| JP5533395B2 (ja) * | 2010-07-26 | 2014-06-25 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| DE112012000658T5 (de) | 2011-02-04 | 2013-11-07 | Asahi Glass Company, Limited | Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie |
| JP6125772B2 (ja) | 2011-09-28 | 2017-05-10 | Hoya株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
| JP5950535B2 (ja) * | 2011-10-25 | 2016-07-13 | 凸版印刷株式会社 | 反射型マスクブランクおよび反射型マスク |
| JP5949777B2 (ja) | 2011-10-28 | 2016-07-13 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| KR102165129B1 (ko) * | 2012-03-30 | 2020-10-13 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 다층 반사막 부착 기판, 반사형 마스크 블랭크, 반사형 마스크, 투과형 마스크 블랭크, 투과형 마스크 및 반도체 장치의 제조 방법 |
-
2014
- 2014-09-22 KR KR1020207012491A patent/KR102127907B1/ko active Active
- 2014-09-22 SG SG11201509897WA patent/SG11201509897WA/en unknown
- 2014-09-22 KR KR1020177030201A patent/KR102107799B1/ko active Active
- 2014-09-22 US US14/896,411 patent/US9746762B2/en active Active
- 2014-09-22 WO PCT/JP2014/074993 patent/WO2015046095A1/ja not_active Ceased
- 2014-09-22 SG SG10201911502WA patent/SG10201911502WA/en unknown
- 2014-09-22 KR KR1020157035761A patent/KR101877896B1/ko active Active
- 2014-09-22 SG SG10201805079YA patent/SG10201805079YA/en unknown
- 2014-09-25 JP JP2014194957A patent/JP5729847B2/ja active Active
- 2014-09-26 TW TW107112766A patent/TWI652542B/zh active
- 2014-09-26 TW TW105103579A patent/TWI626503B/zh active
- 2014-09-26 TW TW103133627A patent/TWI530754B/zh active
-
2015
- 2015-04-03 JP JP2015076651A patent/JP6465720B2/ja active Active
-
2017
- 2017-07-21 US US15/655,932 patent/US10209614B2/en active Active
-
2018
- 2018-12-28 US US16/235,334 patent/US10527927B2/en active Active
-
2019
- 2019-01-08 JP JP2019001198A patent/JP6630005B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| SG10201805079YA (en) | 2018-07-30 |
| JP5729847B2 (ja) | 2015-06-03 |
| US20190155141A1 (en) | 2019-05-23 |
| US20170315439A1 (en) | 2017-11-02 |
| KR20170120718A (ko) | 2017-10-31 |
| US10527927B2 (en) | 2020-01-07 |
| US20160124298A1 (en) | 2016-05-05 |
| KR20160061913A (ko) | 2016-06-01 |
| SG10201911502WA (en) | 2020-02-27 |
| TW201617728A (zh) | 2016-05-16 |
| JP6630005B2 (ja) | 2020-01-15 |
| KR102107799B1 (ko) | 2020-05-07 |
| US10209614B2 (en) | 2019-02-19 |
| SG11201509897WA (en) | 2016-04-28 |
| TWI626503B (zh) | 2018-06-11 |
| WO2015046095A1 (ja) | 2015-04-02 |
| US9746762B2 (en) | 2017-08-29 |
| KR20200047800A (ko) | 2020-05-07 |
| TW201516556A (zh) | 2015-05-01 |
| JP2019056939A (ja) | 2019-04-11 |
| JP2015156034A (ja) | 2015-08-27 |
| TWI530754B (zh) | 2016-04-21 |
| JP6465720B2 (ja) | 2019-02-06 |
| JP2015088742A (ja) | 2015-05-07 |
| TW201826009A (zh) | 2018-07-16 |
| KR102127907B1 (ko) | 2020-06-29 |
| KR101877896B1 (ko) | 2018-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI652542B (zh) | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 | |
| TWI616718B (zh) | 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩及半導體裝置之製造方法 | |
| TWI622851B (zh) | 透過型光罩基底、透過型光罩及半導體裝置之製造方法 | |
| JP6348116B2 (ja) | 多層反射膜付き基板、マスクブランク、転写用マスク及び半導体装置の製造方法 | |
| TWI526774B (zh) | Reflective mask substrate and manufacturing method thereof, manufacturing method of reflection type mask and semiconductor device |