MX2016003284A - Particulas metalicas mecanicamente deformadas. - Google Patents

Particulas metalicas mecanicamente deformadas.

Info

Publication number
MX2016003284A
MX2016003284A MX2016003284A MX2016003284A MX2016003284A MX 2016003284 A MX2016003284 A MX 2016003284A MX 2016003284 A MX2016003284 A MX 2016003284A MX 2016003284 A MX2016003284 A MX 2016003284A MX 2016003284 A MX2016003284 A MX 2016003284A
Authority
MX
Mexico
Prior art keywords
metal particles
mechanically deformed
solar cell
deformed metal
conductive contact
Prior art date
Application number
MX2016003284A
Other languages
English (en)
Other versions
MX358427B (es
Inventor
hamilton sewell Richard
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of MX2016003284A publication Critical patent/MX2016003284A/es
Publication of MX358427B publication Critical patent/MX358427B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

Una célula solar puede incluir un sustrato y una región semiconductora dispuesta en o sobre el sustrato. La célula solar puede incluir, además, un contacto conductor dispuesto en la región semiconductora, en donde el contacto conductor incluye partículas conductoras mecánicamente deformadas. Un método para fabricar la célula solar puede incluir depositar partículas metálicas y deformar mecánicamente las partículas metálicas. El método puede incluir, además, formar el contacto conductor que incluye las partículas metálicas mecánicamente deformadas para la célula solar.
MX2016003284A 2013-09-27 2014-09-24 Partículas metálicas mecánicamente deformadas. MX358427B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/039,837 US9536632B2 (en) 2013-09-27 2013-09-27 Mechanically deformed metal particles
PCT/US2014/057306 WO2015048192A1 (en) 2013-09-27 2014-09-24 Mechanically deformed metal particles

Publications (2)

Publication Number Publication Date
MX2016003284A true MX2016003284A (es) 2016-10-04
MX358427B MX358427B (es) 2018-08-20

Family

ID=52738907

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016003284A MX358427B (es) 2013-09-27 2014-09-24 Partículas metálicas mecánicamente deformadas.

Country Status (14)

Country Link
US (1) US9536632B2 (es)
EP (1) EP3050121B1 (es)
JP (1) JP6510537B2 (es)
KR (1) KR102306614B1 (es)
CN (1) CN105493294B (es)
AU (1) AU2014326714B2 (es)
BR (1) BR112016006669B1 (es)
CL (1) CL2016000668A1 (es)
MX (1) MX358427B (es)
MY (1) MY176040A (es)
SA (1) SA516370819B1 (es)
SG (1) SG11201601555VA (es)
TW (1) TWI660516B (es)
WO (1) WO2015048192A1 (es)

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* Cited by examiner, † Cited by third party
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US10000645B2 (en) 2015-11-24 2018-06-19 PLANT PV, Inc. Methods of forming solar cells with fired multilayer film stacks
WO2017091782A1 (en) * 2015-11-24 2017-06-01 Plant Pv, Inc Fired multilayer stacks for use in integrated circuits and solar cells
US9871150B1 (en) * 2016-07-01 2018-01-16 Sunpower Corporation Protective region for metallization of solar cells
CN110120434B (zh) * 2019-06-18 2024-03-26 合肥晶澳太阳能科技有限公司 电池片及其制备方法

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JP4244053B2 (ja) * 2006-06-16 2009-03-25 エプソントヨコム株式会社 圧電デバイスを備えた電子モジュール
KR101039889B1 (ko) * 2006-08-29 2011-06-09 히다치 가세고교 가부시끼가이샤 태양 전지 모듈의 제조 방법
JP2008085227A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 太陽電池モジュール
JP5449849B2 (ja) * 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
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CN102376379B (zh) * 2010-08-13 2016-04-20 三星电子株式会社 导电糊料及包含用其形成的电极的电子器件和太阳能电池
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Also Published As

Publication number Publication date
KR102306614B1 (ko) 2021-09-29
US20150090326A1 (en) 2015-04-02
EP3050121A1 (en) 2016-08-03
CN105493294B (zh) 2018-11-20
KR20160062068A (ko) 2016-06-01
CN105493294A (zh) 2016-04-13
EP3050121B1 (en) 2022-02-23
AU2014326714A1 (en) 2016-01-07
MX358427B (es) 2018-08-20
SG11201601555VA (en) 2016-04-28
MY176040A (en) 2020-07-22
JP6510537B2 (ja) 2019-05-08
JP2016532318A (ja) 2016-10-13
TW201523897A (zh) 2015-06-16
BR112016006669B1 (pt) 2022-04-05
TWI660516B (zh) 2019-05-21
SA516370819B1 (ar) 2019-07-10
BR112016006669A2 (pt) 2017-09-12
CL2016000668A1 (es) 2016-10-14
WO2015048192A1 (en) 2015-04-02
EP3050121A4 (en) 2016-10-19
US9536632B2 (en) 2017-01-03
AU2014326714B2 (en) 2018-10-04

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