BR112016006669A2 - partículas de metal mecanicamente deformadas - Google Patents
partículas de metal mecanicamente deformadasInfo
- Publication number
- BR112016006669A2 BR112016006669A2 BR112016006669A BR112016006669A BR112016006669A2 BR 112016006669 A2 BR112016006669 A2 BR 112016006669A2 BR 112016006669 A BR112016006669 A BR 112016006669A BR 112016006669 A BR112016006669 A BR 112016006669A BR 112016006669 A2 BR112016006669 A2 BR 112016006669A2
- Authority
- BR
- Brazil
- Prior art keywords
- metal particles
- mechanically deformed
- solar cell
- deformed metal
- conductive contact
- Prior art date
Links
- 239000002923 metal particle Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
uma célula solar pode incluir um substrato e uma região semicondutora dispostas dentro ou acima do substrato. a célula solar pode incluir também um contato condutivo disposto sobre a região semicondutora, sendo que o contato condutivo inclui partículas condutivas mecanicamente deformadas. um método para fabricar a célula solar pode incluir a deposição de partículas de metal e a deformação mecânica das partículas de metal. o método pode incluir também a formação do contato condutivo que inclui as partículas de metal mecanicamente deformadas para a célula solar.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/039,837 | 2013-09-27 | ||
US14/039,837 US9536632B2 (en) | 2013-09-27 | 2013-09-27 | Mechanically deformed metal particles |
PCT/US2014/057306 WO2015048192A1 (en) | 2013-09-27 | 2014-09-24 | Mechanically deformed metal particles |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112016006669A2 true BR112016006669A2 (pt) | 2017-09-12 |
BR112016006669B1 BR112016006669B1 (pt) | 2022-04-05 |
Family
ID=52738907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112016006669-3A BR112016006669B1 (pt) | 2013-09-27 | 2014-09-24 | Célula solar com contatos condutivos incluindo partículas de metal mecanicamente deformadas |
Country Status (14)
Country | Link |
---|---|
US (1) | US9536632B2 (pt) |
EP (1) | EP3050121B1 (pt) |
JP (1) | JP6510537B2 (pt) |
KR (1) | KR102306614B1 (pt) |
CN (1) | CN105493294B (pt) |
AU (1) | AU2014326714B2 (pt) |
BR (1) | BR112016006669B1 (pt) |
CL (1) | CL2016000668A1 (pt) |
MX (1) | MX358427B (pt) |
MY (1) | MY176040A (pt) |
SA (1) | SA516370819B1 (pt) |
SG (1) | SG11201601555VA (pt) |
TW (1) | TWI660516B (pt) |
WO (1) | WO2015048192A1 (pt) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10000645B2 (en) | 2015-11-24 | 2018-06-19 | PLANT PV, Inc. | Methods of forming solar cells with fired multilayer film stacks |
WO2017091782A1 (en) * | 2015-11-24 | 2017-06-01 | Plant Pv, Inc | Fired multilayer stacks for use in integrated circuits and solar cells |
US9871150B1 (en) * | 2016-07-01 | 2018-01-16 | Sunpower Corporation | Protective region for metallization of solar cells |
CN110120434B (zh) * | 2019-06-18 | 2024-03-26 | 合肥晶澳太阳能科技有限公司 | 电池片及其制备方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE514600C2 (sv) * | 1999-05-25 | 2001-03-19 | Forskarpatent I Uppsala Ab | Metod för tillverkning av nanostrukturerade tunnfilmselektroder |
DE10020412A1 (de) | 2000-04-26 | 2001-11-08 | Univ Konstanz | Verfahren und Vorrichtung zum Anbringen einer Metallfolie an einen Halbleiterwafer, Halbleitervorrichtung und Verwendung |
JP4244053B2 (ja) * | 2006-06-16 | 2009-03-25 | エプソントヨコム株式会社 | 圧電デバイスを備えた電子モジュール |
KR101039889B1 (ko) * | 2006-08-29 | 2011-06-09 | 히다치 가세고교 가부시끼가이샤 | 태양 전지 모듈의 제조 방법 |
JP2008085227A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP5449849B2 (ja) * | 2009-04-30 | 2014-03-19 | シャープ株式会社 | 太陽電池およびその製造方法 |
WO2011120714A2 (de) * | 2010-04-01 | 2011-10-06 | Somont Gmbh | Solarzellen und herstellverfahren dafür |
JP2012009546A (ja) * | 2010-06-23 | 2012-01-12 | Hitachi Ltd | 薄膜製造方法、薄膜付基板および薄膜製造装置 |
JP2012018941A (ja) * | 2010-07-06 | 2012-01-26 | Sharp Corp | 裏面電極型太陽電池セル、裏面電極型太陽電池モジュールおよび裏面電極型太陽電池セルの製造方法。 |
KR20120010920A (ko) | 2010-07-27 | 2012-02-06 | 엘지디스플레이 주식회사 | 박막 태양전지 및 그 제조방법 |
CN102376379B (zh) * | 2010-08-13 | 2016-04-20 | 三星电子株式会社 | 导电糊料及包含用其形成的电极的电子器件和太阳能电池 |
US20120037216A1 (en) * | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
KR101110826B1 (ko) * | 2010-08-17 | 2012-02-24 | 엘지전자 주식회사 | 태양전지 패널 |
KR101741682B1 (ko) * | 2010-08-24 | 2017-05-31 | 삼성전자주식회사 | 도전성 페이스트와 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지 |
US9530925B2 (en) | 2010-10-19 | 2016-12-27 | Air Products And Chemicals, Inc. | Conductive composition and method for making conductive features on thin film PV cells |
TW201251084A (en) * | 2010-12-02 | 2012-12-16 | Applied Nanotech Holdings Inc | Nanoparticle inks for solar cells |
KR101197575B1 (ko) | 2011-02-11 | 2012-11-06 | 한밭대학교 산학협력단 | 태양전지 및 그 제조 방법 |
US20130105806A1 (en) | 2011-11-01 | 2013-05-02 | Guojun Liu | Structures incorporating silicon nanoparticle inks, densified silicon materials from nanoparticle silicon deposits and corresponding methods |
JP2013164990A (ja) * | 2012-02-10 | 2013-08-22 | Taiyo Holdings Co Ltd | 電極、電極の製造方法およびそれを用いた電子デバイス |
JP5124691B1 (ja) * | 2012-03-21 | 2013-01-23 | 有限会社 ナプラ | 導電性微粉末、導電性ペースト及び電子部品 |
-
2013
- 2013-09-27 US US14/039,837 patent/US9536632B2/en active Active
-
2014
- 2014-09-24 JP JP2016545219A patent/JP6510537B2/ja active Active
- 2014-09-24 EP EP14846956.2A patent/EP3050121B1/en active Active
- 2014-09-24 MX MX2016003284A patent/MX358427B/es active IP Right Grant
- 2014-09-24 BR BR112016006669-3A patent/BR112016006669B1/pt active IP Right Grant
- 2014-09-24 AU AU2014326714A patent/AU2014326714B2/en active Active
- 2014-09-24 MY MYPI2016000516A patent/MY176040A/en unknown
- 2014-09-24 SG SG11201601555VA patent/SG11201601555VA/en unknown
- 2014-09-24 CN CN201480047114.XA patent/CN105493294B/zh active Active
- 2014-09-24 WO PCT/US2014/057306 patent/WO2015048192A1/en active Application Filing
- 2014-09-24 KR KR1020167010445A patent/KR102306614B1/ko active IP Right Grant
- 2014-09-26 TW TW103133665A patent/TWI660516B/zh active
-
2016
- 2016-03-22 CL CL2016000668A patent/CL2016000668A1/es unknown
- 2016-03-26 SA SA516370819A patent/SA516370819B1/ar unknown
Also Published As
Publication number | Publication date |
---|---|
KR102306614B1 (ko) | 2021-09-29 |
US20150090326A1 (en) | 2015-04-02 |
EP3050121A1 (en) | 2016-08-03 |
CN105493294B (zh) | 2018-11-20 |
KR20160062068A (ko) | 2016-06-01 |
CN105493294A (zh) | 2016-04-13 |
EP3050121B1 (en) | 2022-02-23 |
AU2014326714A1 (en) | 2016-01-07 |
MX358427B (es) | 2018-08-20 |
SG11201601555VA (en) | 2016-04-28 |
MY176040A (en) | 2020-07-22 |
JP6510537B2 (ja) | 2019-05-08 |
JP2016532318A (ja) | 2016-10-13 |
TW201523897A (zh) | 2015-06-16 |
BR112016006669B1 (pt) | 2022-04-05 |
MX2016003284A (es) | 2016-10-04 |
TWI660516B (zh) | 2019-05-21 |
SA516370819B1 (ar) | 2019-07-10 |
CL2016000668A1 (es) | 2016-10-14 |
WO2015048192A1 (en) | 2015-04-02 |
EP3050121A4 (en) | 2016-10-19 |
US9536632B2 (en) | 2017-01-03 |
AU2014326714B2 (en) | 2018-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B350 | Update of information on the portal [chapter 15.35 patent gazette] | ||
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 24/09/2014, OBSERVADAS AS CONDICOES LEGAIS. |
|
B25G | Requested change of headquarter approved |
Owner name: SUNPOWER CORPORATION (US) |
|
B25A | Requested transfer of rights approved |
Owner name: MAXEON SOLAR PTE. LTD. (SG) |