CL2016000668A1 - Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar - Google Patents

Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar

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Publication number
CL2016000668A1
CL2016000668A1 CL2016000668A CL2016000668A CL2016000668A1 CL 2016000668 A1 CL2016000668 A1 CL 2016000668A1 CL 2016000668 A CL2016000668 A CL 2016000668A CL 2016000668 A CL2016000668 A CL 2016000668A CL 2016000668 A1 CL2016000668 A1 CL 2016000668A1
Authority
CL
Chile
Prior art keywords
substrate
solar cell
semiconductor region
conductive contact
disposed
Prior art date
Application number
CL2016000668A
Other languages
English (en)
Inventor
Richard Hamilton Sewell
Original Assignee
Sunpower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sunpower Corp filed Critical Sunpower Corp
Publication of CL2016000668A1 publication Critical patent/CL2016000668A1/es

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

Reiv.1 Una célula solar caracterizada porque comprende: - Un sustrato; - Una región semiconductora dispuesta en o sobre el sustrato; y - Un contacto conductor dispuesto en la región semiconductora, en donde el contacto conductor incluye partículas metálicas mecánicamente deformadas. Reiv.7 Un método para fabricar una célula solar caracterizado porque comprende: - Depositar partículas metálicas; - Deformar mecánicamente las partículas metálicas; - Formar un contacto conductor que incluye las partículas metálicas mecánicamente deformadas para la célula solar. Reiv.20 Una célula solar caracterizada porque comprende: - Un sustrato; - Una región semiconductora dispuesta en o sobre el sustrato; y - Un contacto conductor dispuesto en la región semiconductora, en donde el contacto conductor incluye las partículas conductoras mecánicamente deformadas.
CL2016000668A 2013-09-27 2016-03-22 Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar CL2016000668A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/039,837 US9536632B2 (en) 2013-09-27 2013-09-27 Mechanically deformed metal particles

Publications (1)

Publication Number Publication Date
CL2016000668A1 true CL2016000668A1 (es) 2016-10-14

Family

ID=52738907

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2016000668A CL2016000668A1 (es) 2013-09-27 2016-03-22 Célula solar que comprende: sustrato; región semiconductora dispuesta en o sobre el sustrato; y contacto conductor dispuesto en la región semiconductora que incluye partículas metálicas mecánicamente deformadas; y método para fabricar una célula solar

Country Status (14)

Country Link
US (1) US9536632B2 (es)
EP (1) EP3050121B1 (es)
JP (1) JP6510537B2 (es)
KR (1) KR102306614B1 (es)
CN (1) CN105493294B (es)
AU (1) AU2014326714B2 (es)
BR (1) BR112016006669B1 (es)
CL (1) CL2016000668A1 (es)
MX (1) MX358427B (es)
MY (1) MY176040A (es)
SA (1) SA516370819B1 (es)
SG (1) SG11201601555VA (es)
TW (1) TWI660516B (es)
WO (1) WO2015048192A1 (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10000645B2 (en) 2015-11-24 2018-06-19 PLANT PV, Inc. Methods of forming solar cells with fired multilayer film stacks
EP3381047A4 (en) * 2015-11-24 2019-07-03 Hitachi Chemical Co., Ltd. BURNED MULTILAYER STACKS IN INTEGRATED CIRCUITS AND SOLAR CELLS
US9871150B1 (en) * 2016-07-01 2018-01-16 Sunpower Corporation Protective region for metallization of solar cells
CN110120434B (zh) * 2019-06-18 2024-03-26 合肥晶澳太阳能科技有限公司 电池片及其制备方法

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JP4244053B2 (ja) * 2006-06-16 2009-03-25 エプソントヨコム株式会社 圧電デバイスを備えた電子モジュール
EP2058868A4 (en) * 2006-08-29 2010-01-27 Hitachi Chemical Co Ltd CONDUCTIVE ADHESIVE FILM AND SOLAR CELL MODULE
JP2008085227A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 太陽電池モジュール
JP5449849B2 (ja) * 2009-04-30 2014-03-19 シャープ株式会社 太陽電池およびその製造方法
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Also Published As

Publication number Publication date
SG11201601555VA (en) 2016-04-28
JP2016532318A (ja) 2016-10-13
EP3050121A4 (en) 2016-10-19
TWI660516B (zh) 2019-05-21
AU2014326714B2 (en) 2018-10-04
WO2015048192A1 (en) 2015-04-02
JP6510537B2 (ja) 2019-05-08
EP3050121B1 (en) 2022-02-23
KR102306614B1 (ko) 2021-09-29
AU2014326714A1 (en) 2016-01-07
CN105493294B (zh) 2018-11-20
BR112016006669A2 (pt) 2017-09-12
US20150090326A1 (en) 2015-04-02
SA516370819B1 (ar) 2019-07-10
MY176040A (en) 2020-07-22
EP3050121A1 (en) 2016-08-03
KR20160062068A (ko) 2016-06-01
US9536632B2 (en) 2017-01-03
BR112016006669B1 (pt) 2022-04-05
MX2016003284A (es) 2016-10-04
MX358427B (es) 2018-08-20
TW201523897A (zh) 2015-06-16
CN105493294A (zh) 2016-04-13

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