IN2014DE00384A - - Google Patents
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- IN2014DE00384A IN2014DE00384A IN384DE2014A IN2014DE00384A IN 2014DE00384 A IN2014DE00384 A IN 2014DE00384A IN 384DE2014 A IN384DE2014 A IN 384DE2014A IN 2014DE00384 A IN2014DE00384 A IN 2014DE00384A
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- Prior art keywords
- active layer
- disposed
- ohmic contacts
- layer
- active
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- 238000002161 passivation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000005533 two-dimensional electron gas Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/1025—Semiconducting materials
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- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
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- H01L2924/1032—III-V
- H01L2924/10344—Aluminium gallium nitride [AlGaN]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/780,192 US8928037B2 (en) | 2013-02-28 | 2013-02-28 | Heterostructure power transistor with AlSiN passivation layer |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DE00384A true IN2014DE00384A (es) | 2015-06-12 |
Family
ID=50114308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN384DE2014 IN2014DE00384A (es) | 2013-02-28 | 2014-02-11 |
Country Status (7)
Country | Link |
---|---|
US (3) | US8928037B2 (es) |
EP (1) | EP2772940B1 (es) |
JP (1) | JP6498865B2 (es) |
KR (2) | KR101960031B1 (es) |
CN (1) | CN104022148B (es) |
IN (1) | IN2014DE00384A (es) |
TW (1) | TWI656644B (es) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
CN102723358B (zh) * | 2012-05-30 | 2015-01-07 | 苏州能讯高能半导体有限公司 | 绝缘栅场效应晶体管及其制造方法 |
JP2014072377A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
US8928037B2 (en) * | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
US9443737B2 (en) * | 2013-04-03 | 2016-09-13 | Texas Instruments Incorporated | Method of forming metal contacts in the barrier layer of a group III-N HEMT |
JP6284140B2 (ja) * | 2013-06-17 | 2018-02-28 | 株式会社タムラ製作所 | Ga2O3系半導体素子 |
US9455341B2 (en) * | 2013-07-17 | 2016-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistor having a back-barrier layer and method of making the same |
US9978844B2 (en) | 2013-08-01 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | HEMT-compatible lateral rectifier structure |
US9806158B2 (en) | 2013-08-01 | 2017-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | HEMT-compatible lateral rectifier structure |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
US9306014B1 (en) * | 2013-12-27 | 2016-04-05 | Power Integrations, Inc. | High-electron-mobility transistors |
US9640620B2 (en) * | 2014-11-03 | 2017-05-02 | Texas Instruments Incorporated | High power transistor with oxide gate barriers |
KR102514466B1 (ko) * | 2014-12-15 | 2023-03-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보된 배선 애플리케이션들을 위한 초박 유전체 확산 배리어 및 에칭 정지 층 |
FR3030886B1 (fr) * | 2014-12-22 | 2017-03-10 | Centre Nat Rech Scient | Dispositif de modulation comportant une nano-diode |
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2013
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US20150076510A1 (en) | 2015-03-19 |
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US10446676B2 (en) | 2019-10-15 |
US8928037B2 (en) | 2015-01-06 |
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CN104022148A (zh) | 2014-09-03 |
KR20140108147A (ko) | 2014-09-05 |
TWI656644B (zh) | 2019-04-11 |
EP2772940A2 (en) | 2014-09-03 |
TW201442230A (zh) | 2014-11-01 |
KR20190031455A (ko) | 2019-03-26 |
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