SG10201805334PA - Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device - Google Patents

Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device

Info

Publication number
SG10201805334PA
SG10201805334PA SG10201805334PA SG10201805334PA SG10201805334PA SG 10201805334P A SG10201805334P A SG 10201805334PA SG 10201805334P A SG10201805334P A SG 10201805334PA SG 10201805334P A SG10201805334P A SG 10201805334PA SG 10201805334P A SG10201805334P A SG 10201805334PA
Authority
SG
Singapore
Prior art keywords
mask blank
reflective mask
manufacturing
reflective
film
Prior art date
Application number
SG10201805334PA
Inventor
Kazuhiro Hamamoto
Tatsuo ASAKAWA
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10201805334PA publication Critical patent/SG10201805334PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 5 Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a 10 mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 m 3 m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an 15 atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 m-1 to 10 m-1 is not more than 50 nm4. Fig. 6
SG10201805334PA 2013-08-30 2014-08-29 Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device SG10201805334PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013179123 2013-08-30

Publications (1)

Publication Number Publication Date
SG10201805334PA true SG10201805334PA (en) 2018-08-30

Family

ID=52586706

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201805334PA SG10201805334PA (en) 2013-08-30 2014-08-29 Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device
SG11201508899TA SG11201508899TA (en) 2013-08-30 2014-08-29 Reflective mask blank, method for manufacturing reflective mask blank, reflective mask, and method for manufacturing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
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Country Status (6)

Country Link
US (2) US9720315B2 (en)
JP (2) JP5716145B1 (en)
KR (2) KR102012783B1 (en)
SG (2) SG10201805334PA (en)
TW (2) TWI522729B (en)
WO (1) WO2015030159A1 (en)

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US10241390B2 (en) 2016-02-24 2019-03-26 AGC Inc. Reflective mask blank and process for producing the reflective mask blank
US10948814B2 (en) * 2016-03-23 2021-03-16 AGC Inc. Substrate for use as mask blank, and mask blank
JP7193344B2 (en) 2016-10-21 2022-12-20 Hoya株式会社 Reflective mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device
KR20180057813A (en) 2016-11-22 2018-05-31 삼성전자주식회사 Phase shift mask for extreme ultraviolet lithography
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP2019053229A (en) 2017-09-15 2019-04-04 東芝メモリ株式会社 Exposure mask and manufacturing method therefor
US11106126B2 (en) * 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
DE102019110706A1 (en) 2018-09-28 2020-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. METHOD FOR PRODUCING EUV PHOTO MASKS
US20220121109A1 (en) * 2019-03-28 2022-04-21 Hoya Corporation Substrate for mask blank, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device
US11448956B2 (en) * 2019-09-05 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. EUV mask
JP7226384B2 (en) * 2020-04-10 2023-02-21 信越化学工業株式会社 Reflective mask blank, manufacturing method thereof, and reflective mask
JP7268644B2 (en) * 2020-06-09 2023-05-08 信越化学工業株式会社 Glass substrate for mask blanks
KR20220044016A (en) 2020-09-29 2022-04-06 삼성전자주식회사 Extreme ultra violet(euv) photo mask and method of manufactureing of semiconductor device using the same
JP2022129534A (en) * 2021-02-25 2022-09-06 Hoya株式会社 Mask blank, reflection type mask, and method for manufacturing semiconductor device
TWI777614B (en) * 2021-06-11 2022-09-11 達運精密工業股份有限公司 Metal mask and method of manufacturing the same
KR102660636B1 (en) * 2021-12-31 2024-04-25 에스케이엔펄스 주식회사 Blank mask and photomask using the same
JP7482197B2 (en) 2021-12-31 2024-05-13 エスケー エンパルス カンパニー リミテッド Blank mask and photomask using same

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US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
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JP4692984B2 (en) * 2004-09-24 2011-06-01 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, MULTILAYER REFLECTOR AND MANUFACTURING METHOD THEREOF
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Also Published As

Publication number Publication date
JPWO2015030159A1 (en) 2017-03-02
JP2015133514A (en) 2015-07-23
KR20160051681A (en) 2016-05-11
US20160161837A1 (en) 2016-06-09
US20170329215A1 (en) 2017-11-16
US9720315B2 (en) 2017-08-01
SG11201508899TA (en) 2015-11-27
TW201514614A (en) 2015-04-16
TWI616718B (en) 2018-03-01
US10191365B2 (en) 2019-01-29
TW201612621A (en) 2016-04-01
JP5716145B1 (en) 2015-05-13
TWI522729B (en) 2016-02-21
WO2015030159A1 (en) 2015-03-05
KR20170121315A (en) 2017-11-01
KR101858947B1 (en) 2018-05-17
KR102012783B1 (en) 2019-08-21
JP6388841B2 (en) 2018-09-12

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