SG10201709699RA - A coated liner assembly for a semiconductor processing chamber - Google Patents

A coated liner assembly for a semiconductor processing chamber

Info

Publication number
SG10201709699RA
SG10201709699RA SG10201709699RA SG10201709699RA SG10201709699RA SG 10201709699R A SG10201709699R A SG 10201709699RA SG 10201709699R A SG10201709699R A SG 10201709699RA SG 10201709699R A SG10201709699R A SG 10201709699RA SG 10201709699R A SG10201709699R A SG 10201709699RA
Authority
SG
Singapore
Prior art keywords
processing chamber
semiconductor processing
liner assembly
coated liner
coated
Prior art date
Application number
SG10201709699RA
Other languages
English (en)
Inventor
Joseph M Ranish
Satheesh Kuppurao
Kailash Kiran Patalay
Paul Brillhart
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201709699RA publication Critical patent/SG10201709699RA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411Cooling of the reaction chamber walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
SG10201709699RA 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber SG10201709699RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361826680P 2013-05-23 2013-05-23

Publications (1)

Publication Number Publication Date
SG10201709699RA true SG10201709699RA (en) 2017-12-28

Family

ID=51933948

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201508512PA SG11201508512PA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber
SG10201709699RA SG10201709699RA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201508512PA SG11201508512PA (en) 2013-05-23 2014-04-08 A coated liner assembly for a semiconductor processing chamber

Country Status (7)

Country Link
US (2) US20140345525A1 (ja)
JP (1) JP6457498B2 (ja)
KR (1) KR102202406B1 (ja)
CN (2) CN111952149A (ja)
SG (2) SG11201508512PA (ja)
TW (4) TWI805498B (ja)
WO (1) WO2014189622A1 (ja)

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US20180254203A1 (en) * 2017-03-02 2018-09-06 Applied Materials, Inc. Apparatus and method to reduce particle formation on substrates in post selective etch process
WO2018213621A2 (en) * 2017-05-18 2018-11-22 Applied Materials, Inc. Thermal chamber with improved thermal uniformity
KR102642790B1 (ko) * 2018-08-06 2024-03-05 어플라이드 머티어리얼스, 인코포레이티드 처리 챔버를 위한 라이너
CN214848503U (zh) 2018-08-29 2021-11-23 应用材料公司 注入器设备、基板处理设备及在机器可读介质中实现的结构
TW202122909A (zh) * 2019-10-25 2021-06-16 美商應用材料股份有限公司 減少極紫外遮罩毛坯缺陷之方法
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US20140345525A1 (en) 2014-11-27
US20140345526A1 (en) 2014-11-27
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TW202307930A (zh) 2023-02-16
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JP2016526297A (ja) 2016-09-01
WO2014189622A1 (en) 2014-11-27
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TWI805498B (zh) 2023-06-11
TWI694493B (zh) 2020-05-21

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