JP6457498B2 - 半導体処理チャンバ用の被覆されたライナーアセンブリ - Google Patents
半導体処理チャンバ用の被覆されたライナーアセンブリ Download PDFInfo
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- JP6457498B2 JP6457498B2 JP2016515330A JP2016515330A JP6457498B2 JP 6457498 B2 JP6457498 B2 JP 6457498B2 JP 2016515330 A JP2016515330 A JP 2016515330A JP 2016515330 A JP2016515330 A JP 2016515330A JP 6457498 B2 JP6457498 B2 JP 6457498B2
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- 238000012545 processing Methods 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 title description 9
- 239000000758 substrate Substances 0.000 claims description 107
- 239000000463 material Substances 0.000 claims description 44
- 239000010410 layer Substances 0.000 claims description 28
- 239000010453 quartz Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000011247 coating layer Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 239000006229 carbon black Substances 0.000 claims description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 5
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 238000003618 dip coating Methods 0.000 claims description 3
- 238000007761 roller coating Methods 0.000 claims description 3
- 238000007776 silk screen coating Methods 0.000 claims description 3
- 238000007581 slurry coating method Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000010285 flame spraying Methods 0.000 claims description 2
- 238000007750 plasma spraying Methods 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 28
- 238000010926 purge Methods 0.000 description 23
- 230000005855 radiation Effects 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004616 Pyrometry Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
Claims (12)
- 処理チャンバで使用するライナーアセンブリであって、
円筒形のリング形状を有するライナー本体であって、前記ライナー本体が、光学的に透明の又は透光性の材料で製造されている、ライナー本体と
前記ライナー本体の外壁に配置され、且つ約200nmから約5000nmの間の一又は複数の波長において不透明である、被覆層と
を含む、ライナーアセンブリ。 - 前記ライナー本体が石英で製造されている、請求項1に記載のライナーアセンブリ。
- 前記被覆層は、炭化ケイ素、ガラス状炭素、カーボンブラック、黒鉛化カーボンブラック、グラファイト、黒色石英、バブルクオーツ、ケイ素、及び黒色着色泥漿コーティングからなるグループから選択された材料で製造されている、請求項1に記載のライナーアセンブリ。
- 前記被覆層が約5μmから約100μmの間の厚さを有する、請求項1に記載のライナーアセンブリ。
- 前記被覆層が、CVD、PVD、プラズマ溶射、浸漬・焼成、スピンコーティング・焼成、フレーム溶射、ブラシコーティング、浸漬コーティング、ローラーコーティング、及び/又はシルクスクリーンコーティングによって形成されている、請求項1に記載のライナーアセンブリ。
- 前記ライナー本体が、内壁及び外壁と結合された上面及び底面をさらに含む、請求項1に記載のライナーアセンブリ。
- 請求項1に記載のライナーアセンブリを備えたエピタキシ堆積チャンバ。
- 前記処理チャンバから取り外し可能である、請求項7に記載のエピタキシ堆積チャンバ。
- 基板上に誘電体層を堆積するための装置であって、
処理チャンバであって、前記処理チャンバのチャンバ本体内に画定された内部容積を有する処理チャンバと、
前記処理チャンバ内に配置されたライナーアセンブリであって、更に、
円筒形のリング形状を有するライナー本体であって、前記ライナー本体が、光学的に透明の又は透光性の材料で製造されている、ライナー本体、及び
前記ライナー本体の外壁を被覆し、前記チャンバ本体に面し、且つ、約200nmから約5000nmの間の一又は複数の波長において不透明である、被覆層
を備えた、ライナーアセンブリと
を含む、装置。 - 前記ライナー本体が石英で製造されている、請求項9に記載の装置。
- 前記被覆層が、炭化ケイ素、ガラス状炭素、カーボンブラック、黒鉛化カーボンブラック、グラファイト、黒色石英、バブルクオーツ、ケイ素、及び黒色着色泥漿コーティングからなるグループから選択された材料で製造されている、請求項9に記載の装置。
- 前記ライナーアセンブリが前記処理チャンバから取り外し可能である、請求項9に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361826680P | 2013-05-23 | 2013-05-23 | |
US61/826,680 | 2013-05-23 | ||
PCT/US2014/033362 WO2014189622A1 (en) | 2013-05-23 | 2014-04-08 | A coated liner assembly for a semiconductor processing chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016526297A JP2016526297A (ja) | 2016-09-01 |
JP6457498B2 true JP6457498B2 (ja) | 2019-01-23 |
Family
ID=51933948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016515330A Active JP6457498B2 (ja) | 2013-05-23 | 2014-04-08 | 半導体処理チャンバ用の被覆されたライナーアセンブリ |
Country Status (7)
Country | Link |
---|---|
US (2) | US20140345525A1 (ja) |
JP (1) | JP6457498B2 (ja) |
KR (1) | KR102202406B1 (ja) |
CN (2) | CN105210173A (ja) |
SG (2) | SG10201709699RA (ja) |
TW (4) | TWI782760B (ja) |
WO (1) | WO2014189622A1 (ja) |
Families Citing this family (13)
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KR101743551B1 (ko) * | 2015-05-06 | 2017-06-05 | (주)에코엔텍 | 반도체 폐가스 처리용 스크러버의 제조방법 및 이에 따른 스크러버, 이 스크러버를 이용한 내부식성 향상 및 산화물 부착방지 방법 |
CN117107221A (zh) * | 2016-03-28 | 2023-11-24 | 应用材料公司 | 基座支撑件 |
US20180254203A1 (en) * | 2017-03-02 | 2018-09-06 | Applied Materials, Inc. | Apparatus and method to reduce particle formation on substrates in post selective etch process |
US11978646B2 (en) * | 2017-05-18 | 2024-05-07 | Applied Materials, Inc. | Thermal chamber with improved thermal uniformity |
KR20210031527A (ko) * | 2018-08-06 | 2021-03-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 처리 챔버를 위한 라이너 |
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TW202122909A (zh) * | 2019-10-25 | 2021-06-16 | 美商應用材料股份有限公司 | 減少極紫外遮罩毛坯缺陷之方法 |
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US11499223B2 (en) | 2020-12-10 | 2022-11-15 | Applied Materials, Inc. | Continuous liner for use in a processing chamber |
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TW201501180A (zh) | 2015-01-01 |
SG11201508512PA (en) | 2015-12-30 |
TW202307930A (zh) | 2023-02-16 |
KR20160013158A (ko) | 2016-02-03 |
CN111952149A (zh) | 2020-11-17 |
TWI694493B (zh) | 2020-05-21 |
TWI805498B (zh) | 2023-06-11 |
TWI782760B (zh) | 2022-11-01 |
SG10201709699RA (en) | 2017-12-28 |
US20140345526A1 (en) | 2014-11-27 |
TW202004856A (zh) | 2020-01-16 |
TW202207286A (zh) | 2022-02-16 |
WO2014189622A1 (en) | 2014-11-27 |
CN105210173A (zh) | 2015-12-30 |
US20140345525A1 (en) | 2014-11-27 |
JP2016526297A (ja) | 2016-09-01 |
KR102202406B1 (ko) | 2021-01-13 |
TWI745717B (zh) | 2021-11-11 |
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