JP5048445B2 - 透明層付き黒色合成石英ガラス - Google Patents
透明層付き黒色合成石英ガラス Download PDFInfo
- Publication number
- JP5048445B2 JP5048445B2 JP2007265582A JP2007265582A JP5048445B2 JP 5048445 B2 JP5048445 B2 JP 5048445B2 JP 2007265582 A JP2007265582 A JP 2007265582A JP 2007265582 A JP2007265582 A JP 2007265582A JP 5048445 B2 JP5048445 B2 JP 5048445B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- less
- ppm
- transparent layer
- synthetic quartz
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 103
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- 239000011521 glass Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 16
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical group C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 10
- 239000005373 porous glass Substances 0.000 claims description 10
- 238000010304 firing Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 238000010574 gas phase reaction Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- 229910007991 Si-N Inorganic materials 0.000 description 4
- 229910006294 Si—N Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000003377 silicon compounds Chemical class 0.000 description 4
- -1 silicon halides Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical compound CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 2
- NMVVEFUHHZJTPM-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octaethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound CC[Si]1(CC)N[Si](CC)(CC)N[Si](CC)(CC)N[Si](CC)(CC)N1 NMVVEFUHHZJTPM-UHFFFAOYSA-N 0.000 description 1
- FIADVASZMLCQIF-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetrazatetrasilocane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N[Si](C)(C)N1 FIADVASZMLCQIF-UHFFFAOYSA-N 0.000 description 1
- DFQSCSITPYBDDC-UHFFFAOYSA-N 2,2,4,4,6,6-hexaethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound CC[Si]1(CC)N[Si](CC)(CC)N[Si](CC)(CC)N1 DFQSCSITPYBDDC-UHFFFAOYSA-N 0.000 description 1
- VCYDUTCMKSROID-UHFFFAOYSA-N 2,2,4,4,6,6-hexakis-phenyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound O1[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)O[Si]1(C=1C=CC=CC=1)C1=CC=CC=C1 VCYDUTCMKSROID-UHFFFAOYSA-N 0.000 description 1
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- HRQDDZWMEGEOOO-UHFFFAOYSA-N 2-trimethylsilylpropanoic acid Chemical compound OC(=O)C(C)[Si](C)(C)C HRQDDZWMEGEOOO-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- APDDLLVYBXGBRF-UHFFFAOYSA-N [diethyl-(triethylsilylamino)silyl]ethane Chemical compound CC[Si](CC)(CC)N[Si](CC)(CC)CC APDDLLVYBXGBRF-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- FYBYQXQHBHTWLP-UHFFFAOYSA-N bis(silyloxysilyloxy)silane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH2]O[SiH3] FYBYQXQHBHTWLP-UHFFFAOYSA-N 0.000 description 1
- RLECCBFNWDXKPK-UHFFFAOYSA-N bis(trimethylsilyl)sulfide Chemical compound C[Si](C)(C)S[Si](C)(C)C RLECCBFNWDXKPK-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- DAKRXZUXJUPCOF-UHFFFAOYSA-N diethyl(dihydroxy)silane Chemical compound CC[Si](O)(O)CC DAKRXZUXJUPCOF-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- QQFBQBDINHJDMN-UHFFFAOYSA-N ethyl 2-trimethylsilylacetate Chemical compound CCOC(=O)C[Si](C)(C)C QQFBQBDINHJDMN-UHFFFAOYSA-N 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- NIZHERJWXFHGGU-UHFFFAOYSA-N isocyanato(trimethyl)silane Chemical compound C[Si](C)(C)N=C=O NIZHERJWXFHGGU-UHFFFAOYSA-N 0.000 description 1
- JNFUJVWWFWBAFI-UHFFFAOYSA-N isocyanato(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(N=C=O)C1=CC=CC=C1 JNFUJVWWFWBAFI-UHFFFAOYSA-N 0.000 description 1
- 150000002540 isothiocyanates Chemical class 0.000 description 1
- XLTUPERVRFLGLJ-UHFFFAOYSA-N isothiocyanato(trimethyl)silane Chemical compound C[Si](C)(C)N=C=S XLTUPERVRFLGLJ-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 150000001283 organosilanols Chemical class 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- JXJTWJYTKGINRZ-UHFFFAOYSA-J silicon(4+);tetraacetate Chemical compound [Si+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O JXJTWJYTKGINRZ-UHFFFAOYSA-J 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- JLAVCPKULITDHO-UHFFFAOYSA-N tetraphenylsilane Chemical compound C1=CC=CC=C1[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 JLAVCPKULITDHO-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- XEJUFRSVJVTIFW-UHFFFAOYSA-N triethyl(triethylsilyl)silane Chemical compound CC[Si](CC)(CC)[Si](CC)(CC)CC XEJUFRSVJVTIFW-UHFFFAOYSA-N 0.000 description 1
- VJUBALBRDWKZAT-UHFFFAOYSA-N triisothiocyanato(phenyl)silane Chemical compound S=C=N[Si](N=C=S)(N=C=S)C1=CC=CC=C1 VJUBALBRDWKZAT-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- JDYCDPFQWXHUDL-UHFFFAOYSA-N trimethyl(methylsulfanyl)silane Chemical compound CS[Si](C)(C)C JDYCDPFQWXHUDL-UHFFFAOYSA-N 0.000 description 1
- OJAJJFGMKAZGRZ-UHFFFAOYSA-N trimethyl(phenoxy)silane Chemical compound C[Si](C)(C)OC1=CC=CC=C1 OJAJJFGMKAZGRZ-UHFFFAOYSA-N 0.000 description 1
- HYWCXWRMUZYRPH-UHFFFAOYSA-N trimethyl(prop-2-enyl)silane Chemical compound C[Si](C)(C)CC=C HYWCXWRMUZYRPH-UHFFFAOYSA-N 0.000 description 1
- KHOQXNHADJBILQ-UHFFFAOYSA-N trimethyl(sulfanyl)silane Chemical compound C[Si](C)(C)S KHOQXNHADJBILQ-UHFFFAOYSA-N 0.000 description 1
- AAPLIUHOKVUFCC-UHFFFAOYSA-N trimethylsilanol Chemical compound C[Si](C)(C)O AAPLIUHOKVUFCC-UHFFFAOYSA-N 0.000 description 1
- QHUNJMXHQHHWQP-UHFFFAOYSA-N trimethylsilyl acetate Chemical compound CC(=O)O[Si](C)(C)C QHUNJMXHQHHWQP-UHFFFAOYSA-N 0.000 description 1
- SEDZOYHHAIAQIW-UHFFFAOYSA-N trimethylsilyl azide Chemical compound C[Si](C)(C)N=[N+]=[N-] SEDZOYHHAIAQIW-UHFFFAOYSA-N 0.000 description 1
- LEIMLDGFXIOXMT-UHFFFAOYSA-N trimethylsilyl cyanide Chemical compound C[Si](C)(C)C#N LEIMLDGFXIOXMT-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FTVLMFQEYACZNP-UHFFFAOYSA-N trimethylsilyl trifluoromethanesulfonate Chemical compound C[Si](C)(C)OS(=O)(=O)C(F)(F)F FTVLMFQEYACZNP-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1453—Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/008—Other surface treatment of glass not in the form of fibres or filaments comprising a lixiviation step
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/02—Compositions for glass with special properties for coloured glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/08—Compositions for glass with special properties for glass selectively absorbing radiation of specified wave lengths
- C03C4/082—Compositions for glass with special properties for glass selectively absorbing radiation of specified wave lengths for infrared absorbing glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/07—Impurity concentration specified
- C03B2201/075—Hydroxyl ion (OH)
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/20—Doped silica-based glasses doped with non-metals other than boron or fluorine
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/02—Pure silica glass, e.g. pure fused quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/26—Doped silica-based glasses containing non-metals other than boron or halide containing carbon
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/50—After-treatment
- C03C2203/52—Heat-treatment
- C03C2203/54—Heat-treatment in a dopant containing atmosphere
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Description
即ち、本発明の透明層付き黒色合成石英ガラスの製造方法は、黒色石英部の遠赤外域の放射率が0.8以上、200〜10000nmの光透過率が厚さ1mmで10%以下、金属不純物濃度の総和が1ppm以下、含有される炭素の濃度が30ppmを超え50000ppm以下、1280℃での粘度が10 11.7 ポアズ以上であり、含有される炭素の濃度が30ppm未満である合成石英ガラス透明層を表面に1mm以上形成してなる透明層付き黒色合成石英ガラスの製造方法であって、水酸基を含むシリカ多孔質ガラス体を、減圧雰囲気にて100℃以上1200℃以下の温度範囲で一定時間予熱した後、揮発性有機珪素化合物雰囲気中、100℃以上1200℃以下の温度で気相反応させ、その反応後、真空引きを開始し10mmHgを超える真空度に達した後、1200℃以上2000℃以下の温度にて焼成することにより緻密なガラス体とすることを特徴とする。
一方、その内部では、拡散排気できなかった揮発性有機珪素化合物が残留しているので、焼結によって、熱分解して炭素が大量に残留し、下記の特性を満たす黒色石英ガラス部分が形成される。即ち、黒色石英ガラス部分は、炭素がガラス体中に30ppmを超えて50000ppm以下の範囲で残留し、遠赤外域の放射率が0.8以上、200〜10000nmの光透過率が厚さ1mmで10%以下、金属不純物濃度の総和が1ppm以下、1280℃での粘度が1011.7ポアズ以上の特性を有する。
加熱焼成時の雰囲気は特に限定されず、例えば、真空、不活性ガス、酸素、塩素が挙げられるが、不活性ガスが好ましく、窒素、Ar又はこれらの混合ガス等がより好ましい。
前記焼成時の圧力条件は、減圧下で行うことにより、ガラス体表面近傍の炭素の残留量を効果的に減少することができ好適である。
Si−OH + [(CH3)3Si]2NH →
Si−N−[(CH3)3Si]2 + H2O ・・・(1)
テトラクロロシランの火炎加水分解によって、石英ガラス層を何重にも堆積させて得た、直径100mmの柱状をした石英ガラスの多孔質体約1kgを、電気炉内に装着された石英ガラス製の炉心管(直径200mm)内にセットした。次いで、炉心管内を排気した後、500℃に加熱し、この温度で60分間予熱した。
その後、反応温度まで昇温し、反応ガスとしてヘキサメチルジシラザンガス蒸気をN2ガスで希釈しながら供給し、多孔質体中の水酸基と反応させた。加熱は、表1に示した反応温度にて、表示された反応時間の間その温度にて保持して行った。なお、N2ガスの流量は1mol/Hrである。
得られた透明層付き黒色合成石英ガラスの透明部と黒色部の炭素(C)を、燃焼−赤外線吸収法で測定した。また、Li、Na、K、Mg、Ti、Fe、Cu、Ni、Cr及びAlの含有量を、ICP質量分析法によって測定した。該金属の総含有量を表2に示した。
OH基の含有量は、FTIRにて赤外域の固有吸収量を測定して算出した。
さらに、各々の、1280℃に加熱してビームベンディング法によりその温度における粘度(単位:ポアズ)、目視による石英ガラスの色判別、厚さ1mmにおける波長200〜10000nmの光の透過率を測定した。
また、得られた透明層付き黒色石英ガラスサンプルの昇温脱離ガス分析を行った。得られたCO2ガスの量を示すイオン電流値を表2に示す。
表1に示した如く条件を変更した以外は、実施例1と同様の処理条件にて緻密化された透明層付き黒色合成石英ガラス体を得た。実施例1と同じ各測定の結果を表2に示す。
表1に示した如く、焼成前に減圧を行わずに大気圧条件で焼成した以外は、実施例1と同様の処理条件にて緻密化されたガラス体全域が黒色化した合成石英ガラス体を得た。実施例1と同じ各測定の結果を表2に示す。
Claims (4)
- 黒色石英部の遠赤外域の放射率が0.8以上、200〜10000nmの光透過率が厚さ1mmで10%以下、金属不純物濃度の総和が1ppm以下、含有される炭素の濃度が30ppmを超え50000ppm以下、1280℃での粘度が10 11.7 ポアズ以上であり、含有される炭素の濃度が30ppm未満である合成石英ガラス透明層を表面に1mm以上形成してなる透明層付き黒色合成石英ガラスの製造方法であって、水酸基を含むシリカ多孔質ガラス体を、減圧雰囲気にて100℃以上1200℃以下の温度範囲で一定時間予熱した後、揮発性有機珪素化合物雰囲気中、100℃以上1200℃以下の温度で気相反応させ、その反応後、真空引きを開始し10mmHgを超える真空度に達した後、1200℃以上2000℃以下の温度にて焼成することにより緻密なガラス体とすることを特徴とする透明層付き黒色合成石英ガラスの製造方法。
- 前記揮発性有機珪素化合物が、オルガノシラザンであることを特徴とする請求項1記載の製造方法。
- 前記オルガノシラザンが、ヘキサメチルジシラザンであることを特徴とする請求項2記載の製造方法。
- 請求項1〜3のいずれか1項記載の方法で製造される透明層付き黒色合成石英ガラスであって、黒色石英部の遠赤外域の放射率が0.8以上、200〜10000nmの光透過率が厚さ1mmで10%以下、金属不純物濃度の総和が1ppm以下、含有される炭素の濃度が30ppmを超え50000ppm以下、1280℃での粘度が1011.7ポアズ以上であり、含有される炭素の濃度が30ppm未満である合成石英ガラス透明層を表面に1mm以上形成してなることを特徴とする透明層付き黒色合成石英ガラス。
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JP2007265582A JP5048445B2 (ja) | 2007-10-11 | 2007-10-11 | 透明層付き黒色合成石英ガラス |
EP08164123A EP2048121A1 (en) | 2007-10-11 | 2008-09-11 | A black synthetic quartz glass with a transparent layer |
US12/249,616 US20090098370A1 (en) | 2007-10-11 | 2008-10-10 | Black synthetic quartz glass with a transparent layer |
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CN101623976B (zh) * | 2009-08-07 | 2013-03-27 | 杜广武 | 一种透光图案玻璃的制作方法 |
CN101623975B (zh) * | 2009-08-07 | 2013-02-27 | 杜广武 | 一种亚光图案玻璃的制作方法 |
JP5583082B2 (ja) * | 2011-06-21 | 2014-09-03 | 信越石英株式会社 | 透明層付き黒色合成石英ガラスの製造方法 |
US9051203B2 (en) | 2012-09-13 | 2015-06-09 | Shin-Etsu Quartz Products Co., Ltd. | Black synthetic quartz glass with transparent layer and method for producing the same |
US9296641B2 (en) * | 2012-11-01 | 2016-03-29 | Owens-Brockway Glass Container Inc. | Inspectable black glass containers |
JP6457498B2 (ja) * | 2013-05-23 | 2019-01-23 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 半導体処理チャンバ用の被覆されたライナーアセンブリ |
US9385004B2 (en) * | 2013-08-15 | 2016-07-05 | Applied Materials, Inc. | Support cylinder for thermal processing chamber |
US20150251950A1 (en) * | 2014-02-17 | 2015-09-10 | Shin-Etsu Quartz Products Co., Ltd. | Coating method with silica coating, and silica-coated body and production method therefor |
DE102015102858B4 (de) | 2015-02-20 | 2019-04-18 | Iqs Gmbh | Verfahren zur Herstellung eines Licht absorbierenden Quarzglases |
US10022523B2 (en) | 2015-04-23 | 2018-07-17 | Terumo Kabushiki Kaisha | Balloon coating method and balloon rotating method |
EP3173386B1 (de) | 2015-11-25 | 2018-05-02 | Heraeus Quarzglas GmbH & Co. KG | Verfahren zur herstellung eines verbundkörpers aus hochkieselsäurehaltigem werkstoff |
DE102017124456A1 (de) * | 2017-10-19 | 2019-04-25 | Heraeus Noblelight Gmbh | Beheizbarer Gasinjektor |
JP6987021B2 (ja) * | 2018-05-28 | 2021-12-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN110183100B (zh) * | 2019-06-19 | 2021-07-16 | 湖北菲利华石英玻璃股份有限公司 | 一种利用大规格二氧化硅疏松体制备石英玻璃的方法 |
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JP3793553B2 (ja) | 1999-03-31 | 2006-07-05 | 京セラ株式会社 | 黒色SiO2質耐食性部材及びその製造方法 |
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