DE60324625D1 - Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren - Google Patents

Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren

Info

Publication number
DE60324625D1
DE60324625D1 DE60324625T DE60324625T DE60324625D1 DE 60324625 D1 DE60324625 D1 DE 60324625D1 DE 60324625 T DE60324625 T DE 60324625T DE 60324625 T DE60324625 T DE 60324625T DE 60324625 D1 DE60324625 D1 DE 60324625D1
Authority
DE
Germany
Prior art keywords
quartz glass
manufacturing processes
thermally sprayed
glass parts
sprayed quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60324625T
Other languages
English (en)
Inventor
Koyata Takahashi
Masanori Kohgo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002288946A external-priority patent/JP2004123435A/ja
Priority claimed from JP2002310241A external-priority patent/JP4407111B2/ja
Application filed by Tosoh Corp filed Critical Tosoh Corp
Application granted granted Critical
Publication of DE60324625D1 publication Critical patent/DE60324625D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628—Nonplanar uniform thickness material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal
DE60324625T 2002-04-04 2003-04-03 Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren Expired - Fee Related DE60324625D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002102656 2002-04-04
JP2002225103 2002-08-01
JP2002254686 2002-08-30
JP2002288946A JP2004123435A (ja) 2002-10-01 2002-10-01 黒色石英ガラス部品及びその製造方法
JP2002310241A JP4407111B2 (ja) 2002-10-24 2002-10-24 石英ガラス溶射部品及びその製造方法

Publications (1)

Publication Number Publication Date
DE60324625D1 true DE60324625D1 (de) 2008-12-24

Family

ID=28457976

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324625T Expired - Fee Related DE60324625D1 (de) 2002-04-04 2003-04-03 Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren

Country Status (6)

Country Link
US (1) US7081290B2 (de)
EP (1) EP1352986B8 (de)
KR (1) KR100913116B1 (de)
CN (1) CN100350571C (de)
DE (1) DE60324625D1 (de)
TW (1) TW200307652A (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100847082B1 (ko) * 2002-10-31 2008-07-18 토소가부시키가이샤 도상돌기 수식부품 및 그 제조방법과 이를 이용한 장치
KR20050095846A (ko) * 2003-01-28 2005-10-04 토소가부시키가이샤 내식성 부재 및 그 제조 방법
US20070012658A1 (en) * 2003-09-25 2007-01-18 Mize John D Pvd component and coil refurbishing methods
KR101084553B1 (ko) * 2003-10-17 2011-11-17 토소가부시키가이샤 진공장치용 부품과 그 제조방법 및 그것을 이용한 장치
JP4604640B2 (ja) * 2003-10-17 2011-01-05 東ソー株式会社 真空装置用部品及びその製造方法並びにそれを用いた装置
JP2007307430A (ja) * 2004-03-18 2007-11-29 Tetsuo Yazawa 新規な光触媒、その製造方法及びそれを用いた浄化方法
JP4821610B2 (ja) * 2004-09-21 2011-11-24 コニカミノルタホールディングス株式会社 透明ガスバリア性フィルム
DE102005060211B4 (de) * 2005-12-14 2007-09-13 Heraeus Quarzglas Gmbh & Co. Kg Verfahren zur Bestimmung der Oberflächenbelegung eines Quarzglasbauteils
JP5044195B2 (ja) 2006-11-10 2012-10-10 信越化学工業株式会社 Ｓｏｑ基板の製造方法
WO2008069194A1 (ja) * 2006-12-05 2008-06-12 Shin-Etsu Quartz Products Co., Ltd. 合成不透明石英ガラス及びその製造方法
DE102006062166B4 (de) * 2006-12-22 2009-05-14 Heraeus Quarzglas Gmbh & Co. Kg Quarzglas-Bauteil mit Reflektorschicht sowie Verfahren zur Herstellung desselben
WO2008117482A1 (ja) * 2007-03-22 2008-10-02 Kabushiki Kaisha Toshiba 真空成膜装置用部品及び真空成膜装置
JP5229778B2 (ja) * 2007-09-28 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶引き上げ用石英ガラスルツボの製造方法
EP2307807A2 (de) * 2008-05-01 2011-04-13 Thermoceramix, Inc. Heizelementbeschichtungen verwendende kochgeräte
JP5365487B2 (ja) 2008-12-11 2013-12-11 東ソー株式会社 表面が平滑なセラミックビーズおよびその製造方法
JP2010245366A (ja) * 2009-04-08 2010-10-28 Fujifilm Corp 電子素子及びその製造方法、並びに表示装置
KR101110824B1 (ko) * 2009-07-29 2012-03-13 삼성코닝정밀소재 주식회사 태양전지 기판 및 태양전지 기판 제조 방법
US8603292B2 (en) * 2009-10-28 2013-12-10 Lam Research Corporation Quartz window for a degas chamber
US8584612B2 (en) * 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US20110210470A1 (en) * 2010-02-26 2011-09-01 6N Silicon Inc. Crucible and method for furnace capacity utilization
US8492736B2 (en) 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
DE102011115379B4 (de) 2011-10-10 2018-09-27 Schott Ag Beschichtetes Glas- oder Glaskeramik-Substrat mit haptischen Eigenschaften und Glaskeramik-Kochfeld
WO2014003129A1 (ja) 2012-06-27 2014-01-03 株式会社ニコン ＳｉＯ２－ＴｉＯ２系ガラスの製造方法、ＳｉＯ２－ＴｉＯ２系ガラスからなる板状部材の製造方法、製造装置およびＳｉＯ２－ＴｉＯ２系ガラスの製造装置
US8987155B2 (en) * 2012-08-30 2015-03-24 Corning Incorporated Niobium doped silica titania glass and method of preparation
DE202012012372U1 (de) 2012-12-20 2013-01-16 Schott Ag Beschichtetes Glas- oder Glaskeramik-Substrat mit haptischen Eigenschaften
DE102013208799A1 (de) * 2013-05-14 2014-11-20 Heraeus Quarzglas Gmbh & Co. Kg SiO2-basierte Sperrschicht für Hochtemperatur-Diffusions- und Beschichtungsprozesse
SG11201508512PA (en) * 2013-05-23 2015-12-30 Applied Materials Inc A coated liner assembly for a semiconductor processing chamber
US9385004B2 (en) 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber
TW201546007A (zh) * 2014-06-11 2015-12-16 Creating Nano Technologies Inc 玻璃結構之製造方法與設備
CN104312774A (zh) * 2014-09-18 2015-01-28 高建 具有氧化钇覆层的部件的清洗液及清洗方法
DE202014105402U1 (de) * 2014-10-06 2015-01-08 Blacc Gmbh Mehrschichtkörper
WO2016085915A1 (en) 2014-11-26 2016-06-02 Corning Incorporated Doped silica-titania glass having low expansivity and methods of making the same
CN104465415A (zh) * 2014-11-28 2015-03-25 上海华力微电子有限公司 一种改善剥落型缺陷的方法
US20160155657A1 (en) * 2014-12-02 2016-06-02 Applied Materials, Inc. Surface profile modifications for extended life of consumable parts in semiconductor processing equipment
US10475674B2 (en) * 2015-03-25 2019-11-12 SCREEN Holdings Co., Ltd. Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN107626543A (zh) * 2017-08-09 2018-01-26 安吉元融仪器仪表检测有限公司 一种化妆品瓶的喷涂方法
CN110735118A (zh) * 2018-07-18 2020-01-31 友矿材料股份有限公司 靶材溅镀面粗糙度加工方法
CN114102440A (zh) * 2020-08-28 2022-03-01 长鑫存储技术有限公司 用于石英部件的表面处理方法
CN114531127A (zh) * 2022-02-21 2022-05-24 浙江蓝晶芯微电子有限公司 一种带有烘干机构的石英晶体谐振器移动涂抹工艺

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GR59196B (en) 1976-09-08 1977-11-25 Bisch Andre Process producing glassy coverings and several objects
JPS5829259B2 (ja) 1978-06-02 1983-06-21 東芝セラミツクス株式会社 黒色石英ガラス
JPS60120515A (ja) 1983-12-05 1985-06-28 Hitachi Ltd 薄膜形成装置
JP2907401B2 (ja) 1991-02-21 1999-06-21 キヤノン株式会社 スパッタ成膜装置
JP2642556B2 (ja) * 1992-02-05 1997-08-20 新日本製鐵株式会社 溶射皮膜形成方法
JP3156733B2 (ja) * 1992-03-13 2001-04-16 東ソー・クォーツ株式会社 黒色石英ガラス、及びその製法、並びに、それを使用した治具
JP2743982B2 (ja) 1992-04-30 1998-04-28 信越石英株式会社 黒色石英ガラス発泡体及びその製造方法
JPH0651169A (ja) * 1992-07-17 1994-02-25 Toshiaki Inoue 光を吸収し集光する集光素材
JPH06112133A (ja) 1992-09-25 1994-04-22 Nippon Sheet Glass Co Ltd 透明誘電体膜を基体上に被覆する方法
JP3069462B2 (ja) * 1993-03-26 2000-07-24 日本碍子株式会社 セラミックコーティング部材とその製造方法
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
US5427823A (en) * 1993-08-31 1995-06-27 American Research Corporation Of Virginia Laser densification of glass ceramic coatings on carbon-carbon composite materials
JP3114835B2 (ja) 1993-10-27 2000-12-04 信越石英株式会社 石英ガラス物品及びその製造方法
DE4338807C1 (de) 1993-11-12 1995-01-26 Heraeus Quarzglas Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper
JP3497220B2 (ja) * 1993-12-28 2004-02-16 東ソー・クォーツ株式会社 ブラック石英ガラスの製造法
US5460689A (en) 1994-02-28 1995-10-24 Applied Materials, Inc. High pressure plasma treatment method and apparatus
JP3434572B2 (ja) 1994-04-28 2003-08-11 信越石英株式会社 透明石英ガラス層付不透明石英ガラス部材の製造方法
JPH07304133A (ja) * 1994-05-13 1995-11-21 Shin Etsu Chem Co Ltd セラミックス基板およびその製造方法
JP3473917B2 (ja) * 1994-09-30 2003-12-08 信越石英株式会社 粗い表面を有するシリカガラスおよびその製造方法
JPH08339895A (ja) 1995-06-12 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JPH1059744A (ja) 1996-08-20 1998-03-03 Shinetsu Quartz Prod Co Ltd マット面をもつ半導体工業用シリカガラス物品およびその製造方法
DE19713014C2 (de) * 1997-03-27 1999-01-21 Heraeus Quarzglas Bauteil aus Quarzglas für die Verwendung bei der Halbleiterherstellung
DE19719133C2 (de) * 1997-05-07 1999-09-02 Heraeus Quarzglas Glocke aus Quarzglas und Verfahren für ihre Herstellung
JP3929138B2 (ja) 1997-09-30 2007-06-13 信越石英株式会社 表面に凹凸を有する石英ガラスおよびその製造方法
JP2000256037A (ja) 1999-03-05 2000-09-19 Tosoh Corp 透明部を有する黒色石英ガラス及びその製造方法
DE19917288C2 (de) * 1999-04-16 2001-06-28 Heraeus Quarzglas Quarzglas-Tiegel
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
JP2002075901A (ja) 2000-08-31 2002-03-15 Tokyo Electron Ltd アニール装置、メッキ処理システム、および半導体デバイスの製造方法
JP2003041153A (ja) 2001-07-31 2003-02-13 Fuji Photo Film Co Ltd 無機組成物、フィルム、及びフィルムの製造方法
US20030027055A1 (en) * 2001-08-01 2003-02-06 Ball Laura J. Method and feedstock for making photomask material

Also Published As

Publication number Publication date
EP1352986B1 (de) 2008-11-12
KR20030079781A (ko) 2003-10-10
EP1352986A3 (de) 2004-06-23
TW200307652A (en) 2003-12-16
KR100913116B1 (ko) 2009-08-19
CN1448996A (zh) 2003-10-15
US20040018361A1 (en) 2004-01-29
CN100350571C (zh) 2007-11-21
EP1352986B8 (de) 2009-03-04
EP1352986A2 (de) 2003-10-15
US7081290B2 (en) 2006-07-25

Similar Documents

Publication Publication Date Title
DE60324625D1 (de) Thermisch-gespritzte Quarzglasteile und Herstellungsverfahren
DE60310339D1 (de) Querträger und Herstellungsverfahren
DE60319810D1 (de) Anschwemmfiltermedien und herstellungs- und verwendungsverfahren
DE60223735D1 (de) Interferometer und zugehöriges Herstellungsverfahren
NO20034212D0 (no) Kvartsglasskomponent og fremstilling derav
DE60324888D1 (de) und Herstellungsverfahren
DE60226928D1 (de) Polyhydroxyalkanoat-enthaltende Struktur und Herstellungsverfahren hierfür
FR15C0028I2 (fr) Fabrication de tiacumicine
DE602004006179D1 (de) Absorbierender Artikel und Herstellungsverfahren
DE60136927D1 (de) Rfelektiver bedruckter gegenstand und sein herstellungsverfahren
DE602004007637D1 (de) Tio2 enthaltendessiliciumdioxidglas und herstellungsverfahren dafür
DE60218767D1 (de) Reissverschluss und Herstellungsverfahren
DE602004018896D1 (de) Duplexer und Herstellungsverfahen
DE60228061D1 (de) Maschenware mit öffnung und herstellungsverfahren
DE60227777D1 (de) Handgriffstruktur und herstellungsverfahren dafür
DE60218118D1 (de) Reifenformwerkzeug und Reifenherstellverfahren
DE60225184D1 (de) Polyetherketon und herstellungsverfahren dafür
DE60210535D1 (de) Vibrator und Herstellungsverfahren desselben
DE60231538D1 (de) Sputtertarget und herstellungsverfahren dafür
DE60215897D1 (de) Intern markiertes Quarzglas und Markierungsverfahren
DE50214244D1 (de) Klauenpolläufer und dessen herstellverfahren
DE60315169D1 (de) Optisches mikrosystem und herstellungsverfahren
DE02796975T1 (de) Hochtemperatur-gasreformier-zykloverbrennungsvorrichtung
DE60226387D1 (de) CMOS Metallgate und Herstellungsverfahren
DE60302916D1 (de) Halbleiterlaser und Herstellungsverfahren

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: TOSOH CORP., SHUNAN, YAMAGUCHI, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee