SG10201605470SA - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- SG10201605470SA SG10201605470SA SG10201605470SA SG10201605470SA SG10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
- G09G5/003—Details of a display terminal, the details relating to the control arrangement of the display terminal and to the interfaces thereto
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/26—Power supply means, e.g. regulation thereof
- G06F1/32—Means for saving power
- G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
- G06F1/3234—Power saving characterised by the action undertaken
- G06F1/3287—Power saving characterised by the action undertaken by switching off individual functional units in the computer system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computing Systems (AREA)
- Thin Film Transistor (AREA)
- Power Sources (AREA)
- Semiconductor Integrated Circuits (AREA)
- Microcomputers (AREA)
- Electronic Switches (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012011120 | 2012-01-23 | ||
JP2012011124 | 2012-01-23 | ||
JP2012105538 | 2012-05-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201605470SA true SG10201605470SA (en) | 2016-08-30 |
Family
ID=48798246
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504940RA SG11201504940RA (en) | 2012-01-23 | 2013-01-16 | Semiconductor device |
SG10201605470SA SG10201605470SA (en) | 2012-01-23 | 2013-01-16 | Semiconductor device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201504940RA SG11201504940RA (en) | 2012-01-23 | 2013-01-16 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (3) | US9804645B2 (fr) |
JP (6) | JP6027898B2 (fr) |
KR (3) | KR102147870B1 (fr) |
SG (2) | SG11201504940RA (fr) |
TW (1) | TWI573013B (fr) |
WO (1) | WO2013111757A1 (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102541167A (zh) * | 2010-12-23 | 2012-07-04 | 鸿富锦精密工业(深圳)有限公司 | 电子装置 |
JP5879165B2 (ja) | 2011-03-30 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI570730B (zh) | 2011-05-20 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6046514B2 (ja) | 2012-03-01 | 2016-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9030232B2 (en) | 2012-04-13 | 2015-05-12 | Semiconductor Energy Laboratory Co., Ltd. | Isolator circuit and semiconductor device |
KR102088865B1 (ko) | 2012-09-03 | 2020-03-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 마이크로 컨트롤러 |
TWI482007B (zh) * | 2012-09-27 | 2015-04-21 | Wistron Corp | 電腦系統、電源供應裝置及電源供應方法 |
WO2014061761A1 (fr) | 2012-10-17 | 2014-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Microcontrôleur et son procédé de fabrication |
TWI619010B (zh) | 2013-01-24 | 2018-03-21 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP6000863B2 (ja) * | 2013-01-24 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置、及びその駆動方法 |
JP6396671B2 (ja) | 2013-04-26 | 2018-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8994430B2 (en) | 2013-05-17 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US11768689B2 (en) | 2013-08-08 | 2023-09-26 | Movidius Limited | Apparatus, systems, and methods for low power computational imaging |
US9910675B2 (en) | 2013-08-08 | 2018-03-06 | Linear Algebra Technologies Limited | Apparatus, systems, and methods for low power computational imaging |
WO2015121771A1 (fr) | 2014-02-14 | 2015-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur et dispositif électronique |
KR102398965B1 (ko) | 2014-03-20 | 2022-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
US9515661B2 (en) | 2014-05-09 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Circuit, semiconductor device, and clock tree |
JP2016015475A (ja) * | 2014-06-13 | 2016-01-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
EP3982234A3 (fr) * | 2014-07-30 | 2022-05-11 | Movidius Ltd. | Imagerie à faible puissance de calcul |
US10204898B2 (en) | 2014-08-08 | 2019-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP6652342B2 (ja) * | 2014-08-08 | 2020-02-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9443564B2 (en) | 2015-01-26 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
US10553690B2 (en) | 2015-08-04 | 2020-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6365574B2 (ja) * | 2016-03-23 | 2018-08-01 | カシオ計算機株式会社 | 電子機器及び電子機器の電力供給制御方法 |
WO2017178923A1 (fr) * | 2016-04-15 | 2017-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteur, composant électronique et dispositif électronique |
WO2018015833A1 (fr) | 2016-07-19 | 2018-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif à semi-conducteurs |
US10120470B2 (en) | 2016-07-22 | 2018-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device |
US10540944B2 (en) * | 2016-09-29 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising register |
US10797706B2 (en) | 2016-12-27 | 2020-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR20180076571A (ko) * | 2016-12-28 | 2018-07-06 | 에스케이하이닉스 주식회사 | 반도체 장치 및 반도체 시스템 |
US11257722B2 (en) | 2017-07-31 | 2022-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide containing gallium indium and zinc |
JP2019046199A (ja) * | 2017-09-01 | 2019-03-22 | 株式会社半導体エネルギー研究所 | プロセッサ、および電子機器 |
KR20190063879A (ko) * | 2017-11-30 | 2019-06-10 | 에스케이하이닉스 주식회사 | 반도체 장치 |
JP7109973B2 (ja) * | 2018-04-13 | 2022-08-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2021024083A1 (fr) | 2019-08-08 | 2021-02-11 | 株式会社半導体エネルギー研究所 | Dispositif à semi-conducteur |
US20220198022A1 (en) * | 2020-12-23 | 2022-06-23 | Intel Corporation | Secure device power-up apparatus and method |
WO2023119039A1 (fr) * | 2021-12-22 | 2023-06-29 | 株式会社半導体エネルギー研究所 | Dispositif à semi-conducteur |
Family Cites Families (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5815805B2 (ja) | 1981-09-14 | 1983-03-28 | 株式会社東芝 | 集積回路装置 |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH0786916A (ja) | 1993-09-17 | 1995-03-31 | Hitachi Ltd | 半導体集積回路 |
US5614847A (en) | 1992-04-14 | 1997-03-25 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
US5583457A (en) | 1992-04-14 | 1996-12-10 | Hitachi, Ltd. | Semiconductor integrated circuit device having power reduction mechanism |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (fr) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Dispositif a semi-conducteur pourvu d'un element de commutation transparent |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3592423B2 (ja) | 1996-01-26 | 2004-11-24 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
DE69937485T2 (de) | 1998-01-28 | 2008-08-21 | Thin Film Electronics Asa | Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode |
NO308149B1 (no) | 1998-06-02 | 2000-07-31 | Thin Film Electronics Asa | Skalerbar, integrert databehandlingsinnretning |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000098443A (ja) | 1998-09-17 | 2000-04-07 | Olympus Optical Co Ltd | 電子カメラ |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
CN1160792C (zh) | 1998-12-04 | 2004-08-04 | 薄膜电子有限公司 | 可伸缩的数据处理设备 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP3255159B2 (ja) * | 1999-10-13 | 2002-02-12 | 株式会社日立製作所 | 半導体集積回路 |
JP4521676B2 (ja) | 2000-06-16 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
JP3878431B2 (ja) | 2000-06-16 | 2007-02-07 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP2003132683A (ja) | 2001-10-23 | 2003-05-09 | Hitachi Ltd | 半導体装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
WO2003040441A1 (fr) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US6920574B2 (en) * | 2002-04-29 | 2005-07-19 | Apple Computer, Inc. | Conserving power by reducing voltage supplied to an instruction-processing portion of a processor |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP3567160B2 (ja) * | 2003-01-30 | 2004-09-22 | 株式会社ルネサステクノロジ | 半導体集積回路 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
JP2005011166A (ja) | 2003-06-20 | 2005-01-13 | Renesas Technology Corp | 情報処理装置 |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
KR101078483B1 (ko) | 2004-03-12 | 2011-10-31 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Lcd 또는 유기 el 디스플레이의 스위칭 소자 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
US7284137B2 (en) * | 2004-06-29 | 2007-10-16 | Intel Corporation | System and method for managing power consumption within an integrated circuit |
JP2006048190A (ja) | 2004-08-02 | 2006-02-16 | Seiko Epson Corp | 情報処理装置および電力制御方法 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
JP4553185B2 (ja) | 2004-09-15 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
JP5118812B2 (ja) | 2004-11-10 | 2013-01-16 | キヤノン株式会社 | 電界効果型トランジスタ |
CA2585063C (fr) | 2004-11-10 | 2013-01-15 | Canon Kabushiki Kaisha | Dispositif electroluminescent |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
KR100939998B1 (ko) | 2004-11-10 | 2010-02-03 | 캐논 가부시끼가이샤 | 비정질 산화물 및 전계 효과 트랜지스터 |
JP4341542B2 (ja) | 2004-12-15 | 2009-10-07 | セイコーエプソン株式会社 | 情報処理装置および情報処理方法 |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI505473B (zh) | 2005-01-28 | 2015-10-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI390735B (zh) | 2005-01-28 | 2013-03-21 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
CN101120298A (zh) | 2005-02-16 | 2008-02-06 | 松下电器产业株式会社 | 电源控制电路和电子电路 |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
EP1770788A3 (fr) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Dispositif semi-conducteur à oxyde semi-conducteur et son procédé de fabrication |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101577293B (zh) | 2005-11-15 | 2012-09-19 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP4303719B2 (ja) * | 2005-12-08 | 2009-07-29 | Necエレクトロニクス株式会社 | 半導体集積回路およびその制御方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP4911988B2 (ja) | 2006-02-24 | 2012-04-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
JP4839938B2 (ja) | 2006-04-14 | 2011-12-21 | セイコーエプソン株式会社 | 情報処理装置及び情報処理方法 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
JP4312238B2 (ja) | 2007-02-13 | 2009-08-12 | 株式会社ソニー・コンピュータエンタテインメント | 画像変換装置および画像変換方法 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5198785B2 (ja) | 2007-03-30 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
WO2008133345A1 (fr) | 2007-04-25 | 2008-11-06 | Canon Kabushiki Kaisha | Semi-conducteur d'oxynitrure |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
US7868479B2 (en) | 2007-06-27 | 2011-01-11 | Qualcomm Incorporated | Power gating for multimedia processing power management |
JP2009015231A (ja) * | 2007-07-09 | 2009-01-22 | Fuji Xerox Co Ltd | 画像形成装置および電源装置 |
JP4960813B2 (ja) | 2007-09-14 | 2012-06-27 | 株式会社リコー | 電力制御システム |
JP2009085786A (ja) | 2007-09-28 | 2009-04-23 | Toyota Motor Corp | 溶接ビード検査装置および溶接ビード検査方法 |
US8046615B2 (en) | 2007-10-19 | 2011-10-25 | Denso Corporation | Microcomputer system with reduced power consumption |
JP4535170B2 (ja) | 2007-10-19 | 2010-09-01 | 株式会社デンソー | マイクロコンピュータシステム |
JP5104254B2 (ja) * | 2007-11-30 | 2012-12-19 | 富士通セミコンダクター株式会社 | 集積回路装置 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5452041B2 (ja) | 2009-03-13 | 2014-03-26 | ローム株式会社 | データ処理装置 |
JP2010282585A (ja) * | 2009-06-08 | 2010-12-16 | Fujitsu Ltd | 電力管理回路、電力管理方法及び電力管理プログラム |
JP2010287950A (ja) * | 2009-06-09 | 2010-12-24 | Sanyo Electric Co Ltd | 電子機器 |
JP2011043913A (ja) | 2009-08-19 | 2011-03-03 | Ricoh Co Ltd | 画像形成装置、電源供給制御方法、プログラム及び記録媒体 |
CN102612741B (zh) | 2009-11-06 | 2014-11-12 | 株式会社半导体能源研究所 | 半导体装置 |
JP2011120158A (ja) | 2009-12-07 | 2011-06-16 | Renesas Electronics Corp | 半導体装置及び電源スイッチ回路 |
KR101770976B1 (ko) | 2009-12-11 | 2017-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101861991B1 (ko) | 2010-01-20 | 2018-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 신호 처리 회로 및 신호 처리 회로를 구동하기 위한 방법 |
JP2011151150A (ja) * | 2010-01-20 | 2011-08-04 | Toshiba Corp | 半導体集積回路 |
EP2526622B1 (fr) | 2010-01-20 | 2015-09-23 | Semiconductor Energy Laboratory Co. Ltd. | Dispositif à semi-conducteur |
KR20120120330A (ko) | 2010-01-29 | 2012-11-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
TWM394507U (en) | 2010-02-08 | 2010-12-11 | Tech United Corp C | Secondary side power source control switch |
EP2372861B1 (fr) * | 2010-04-01 | 2013-01-30 | Racktivity NV | Unité de gestion du centre de données avec équilibrage des charges dynamiques |
US8692243B2 (en) | 2010-04-20 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8850236B2 (en) | 2010-06-18 | 2014-09-30 | Samsung Electronics Co., Ltd. | Power gating of cores by an SoC |
US8642416B2 (en) * | 2010-07-30 | 2014-02-04 | Monolithic 3D Inc. | Method of forming three dimensional integrated circuit devices using layer transfer technique |
US8415972B2 (en) * | 2010-11-17 | 2013-04-09 | Advanced Micro Devices, Inc. | Variable-width power gating module |
-
2013
- 2013-01-16 KR KR1020147023583A patent/KR102147870B1/ko active IP Right Grant
- 2013-01-16 KR KR1020207023896A patent/KR102296696B1/ko active IP Right Grant
- 2013-01-16 JP JP2013005168A patent/JP6027898B2/ja not_active Expired - Fee Related
- 2013-01-16 SG SG11201504940RA patent/SG11201504940RA/en unknown
- 2013-01-16 SG SG10201605470SA patent/SG10201605470SA/en unknown
- 2013-01-16 WO PCT/JP2013/051230 patent/WO2013111757A1/fr active Application Filing
- 2013-01-16 KR KR1020217027314A patent/KR102433736B1/ko active IP Right Grant
- 2013-01-18 US US13/744,561 patent/US9804645B2/en not_active Expired - Fee Related
- 2013-01-22 TW TW102102361A patent/TWI573013B/zh not_active IP Right Cessation
-
2016
- 2016-10-17 JP JP2016203514A patent/JP6286507B2/ja not_active Expired - Fee Related
-
2017
- 2017-10-26 US US15/794,033 patent/US11209880B2/en active Active
-
2018
- 2018-02-05 JP JP2018018151A patent/JP6612908B2/ja active Active
-
2019
- 2019-10-31 JP JP2019198373A patent/JP2020047280A/ja not_active Withdrawn
-
2020
- 2020-06-01 JP JP2020095247A patent/JP2020161155A/ja not_active Withdrawn
-
2021
- 2021-01-11 US US17/145,436 patent/US11934243B2/en active Active
-
2023
- 2023-01-06 JP JP2023000881A patent/JP2023052237A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US20180088644A1 (en) | 2018-03-29 |
JP6612908B2 (ja) | 2019-11-27 |
KR20200103848A (ko) | 2020-09-02 |
JP2023052237A (ja) | 2023-04-11 |
JP2020161155A (ja) | 2020-10-01 |
KR102433736B1 (ko) | 2022-08-19 |
US9804645B2 (en) | 2017-10-31 |
US11209880B2 (en) | 2021-12-28 |
US20130191673A1 (en) | 2013-07-25 |
US20210132672A1 (en) | 2021-05-06 |
KR102296696B1 (ko) | 2021-09-02 |
KR20140124795A (ko) | 2014-10-27 |
JP2020047280A (ja) | 2020-03-26 |
SG11201504940RA (en) | 2015-07-30 |
KR102147870B1 (ko) | 2020-08-25 |
JP2017084355A (ja) | 2017-05-18 |
JP6027898B2 (ja) | 2016-11-16 |
JP2018101436A (ja) | 2018-06-28 |
JP2013251884A (ja) | 2013-12-12 |
KR20210111327A (ko) | 2021-09-10 |
JP6286507B2 (ja) | 2018-02-28 |
TWI573013B (zh) | 2017-03-01 |
TW201346510A (zh) | 2013-11-16 |
US11934243B2 (en) | 2024-03-19 |
WO2013111757A1 (fr) | 2013-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI562361B (en) | Semiconductor device | |
EP2824703A4 (fr) | Dispositif à semi-conducteurs | |
EP2908338A4 (fr) | Dispositif à semi-conducteurs | |
SG10201610711UA (en) | Semiconductor device | |
EP2814059A4 (fr) | Dispositif à semiconducteur | |
SG11201504940RA (en) | Semiconductor device | |
EP2804212A4 (fr) | Dispositif à semi-conducteur | |
EP2866250A4 (fr) | Dispositif à semiconducteur | |
EP2814060A4 (fr) | Dispositif semi-conducteur | |
EP2704189A4 (fr) | Dispositif à semi-conducteurs | |
EP2717300A4 (fr) | Dispositif à semi-conducteurs | |
EP2827364A4 (fr) | Dispositif à semi-conducteur | |
EP2922092A4 (fr) | Dispositif semi-conducteur | |
GB201506501D0 (en) | Semiconductor device | |
TWI560880B (en) | Semiconductor device | |
EP2822039A4 (fr) | Dispositif à semi-conducteur | |
EP2725623A4 (fr) | Dispositif à semi-conducteur | |
EP2720263A4 (fr) | Dispositif semi-conducteur | |
EP2752875A4 (fr) | Dispositif à semi-conducteurs | |
EP2887401A4 (fr) | Dispositif à semi-conducteurs | |
HK1243823A1 (zh) | 半導體裝置 | |
EP2672516A4 (fr) | Dispositif semi-conducteur | |
EP2790323A4 (fr) | Dispositif à semiconducteurs | |
EP2940726A4 (fr) | Dispositif à semi-conducteurs | |
EP2924739A4 (fr) | Dispositif à semi-conducteurs |