SE8501122L - Forfarande vid framstellning av integrerade kretsar - Google Patents
Forfarande vid framstellning av integrerade kretsarInfo
- Publication number
- SE8501122L SE8501122L SE8501122A SE8501122A SE8501122L SE 8501122 L SE8501122 L SE 8501122L SE 8501122 A SE8501122 A SE 8501122A SE 8501122 A SE8501122 A SE 8501122A SE 8501122 L SE8501122 L SE 8501122L
- Authority
- SE
- Sweden
- Prior art keywords
- gate electrode
- drain
- areas
- source
- silicon
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000011241 protective layer Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8501122A SE453547B (sv) | 1985-03-07 | 1985-03-07 | Forfarande vid framstellning av integrerade kretsar der pa en substratplatta ledare och s k gate-strukturer uppbygges |
EP86902055A EP0213197B1 (en) | 1985-03-07 | 1986-03-04 | A method in the manufacture of integrated circuits |
PCT/SE1986/000091 WO1986005321A1 (en) | 1985-03-07 | 1986-03-04 | A method in the manufacture of integrated circuits |
JP61501755A JPS62502301A (ja) | 1985-03-07 | 1986-03-04 | 集積回路製造方法 |
US06/933,522 US4740484A (en) | 1985-03-07 | 1986-03-04 | Method in the manufacture of integrated circuits |
DE8686902055T DE3664978D1 (en) | 1985-03-07 | 1986-03-04 | A method in the manufacture of integrated circuits |
AT86902055T ATE45442T1 (de) | 1985-03-07 | 1986-03-04 | Herstellungsverfahren von halbleitern. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8501122A SE453547B (sv) | 1985-03-07 | 1985-03-07 | Forfarande vid framstellning av integrerade kretsar der pa en substratplatta ledare och s k gate-strukturer uppbygges |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8501122D0 SE8501122D0 (sv) | 1985-03-07 |
SE8501122L true SE8501122L (sv) | 1986-09-08 |
SE453547B SE453547B (sv) | 1988-02-08 |
Family
ID=20359403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8501122A SE453547B (sv) | 1985-03-07 | 1985-03-07 | Forfarande vid framstellning av integrerade kretsar der pa en substratplatta ledare och s k gate-strukturer uppbygges |
Country Status (6)
Country | Link |
---|---|
US (1) | US4740484A (sv) |
EP (1) | EP0213197B1 (sv) |
JP (1) | JPS62502301A (sv) |
DE (1) | DE3664978D1 (sv) |
SE (1) | SE453547B (sv) |
WO (1) | WO1986005321A1 (sv) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5028554A (en) * | 1986-07-03 | 1991-07-02 | Oki Electric Industry Co., Ltd. | Process of fabricating an MIS FET |
US4908326A (en) * | 1988-01-19 | 1990-03-13 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
US4855247A (en) * | 1988-01-19 | 1989-08-08 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
NL8800222A (nl) * | 1988-01-29 | 1989-08-16 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op zelfregistrerende wijze metaalsilicide wordt aangebracht. |
JPH0687483B2 (ja) * | 1988-02-13 | 1994-11-02 | 株式会社東芝 | 半導体装置 |
US5208472A (en) * | 1988-05-13 | 1993-05-04 | Industrial Technology Research Institute | Double spacer salicide MOS device and method |
US4877755A (en) * | 1988-05-31 | 1989-10-31 | Texas Instruments Incorporated | Method of forming silicides having different thicknesses |
GB2219434A (en) * | 1988-06-06 | 1989-12-06 | Philips Nv | A method of forming a contact in a semiconductor device |
US4876213A (en) * | 1988-10-31 | 1989-10-24 | Motorola, Inc. | Salicided source/drain structure |
US4978637A (en) * | 1989-05-31 | 1990-12-18 | Sgs-Thomson Microelectronics, Inc. | Local interconnect process for integrated circuits |
US4994404A (en) * | 1989-08-28 | 1991-02-19 | Motorola, Inc. | Method for forming a lightly-doped drain (LDD) structure in a semiconductor device |
US5153145A (en) * | 1989-10-17 | 1992-10-06 | At&T Bell Laboratories | Fet with gate spacer |
US4981810A (en) * | 1990-02-16 | 1991-01-01 | Micron Technology, Inc. | Process for creating field effect transistors having reduced-slope, staircase-profile sidewall spacers |
US5258645A (en) * | 1990-03-09 | 1993-11-02 | Fujitsu Limited | Semiconductor device having MOS transistor and a sidewall with a double insulator layer structure |
US5102816A (en) * | 1990-03-27 | 1992-04-07 | Sematech, Inc. | Staircase sidewall spacer for improved source/drain architecture |
US5399514A (en) * | 1990-04-24 | 1995-03-21 | Seiko Epson Corporation | Method for manufacturing improved lightly doped diffusion (LDD) semiconductor device |
DE69132695T2 (de) * | 1990-05-11 | 2002-06-13 | Koninkl Philips Electronics Nv | CMOS-Verfahren mit Verwendung von zeitweilig angebrachten Siliciumnitrid-Spacern zum Herstellen von Transistoren (LDD) mit leicht dotiertem Drain |
US5077236A (en) * | 1990-07-02 | 1991-12-31 | Samsung Electronics Co., Ltd. | Method of making a pattern of tungsten interconnection |
US5130266A (en) * | 1990-08-28 | 1992-07-14 | United Microelectronics Corporation | Polycide gate MOSFET process for integrated circuits |
US5234850A (en) * | 1990-09-04 | 1993-08-10 | Industrial Technology Research Institute | Method of fabricating a nitride capped MOSFET for integrated circuits |
US5168072A (en) * | 1990-10-12 | 1992-12-01 | Texas Instruments Incorporated | Method of fabricating an high-performance insulated-gate field-effect transistor |
US5132757A (en) * | 1990-11-16 | 1992-07-21 | Unisys Corporation | LDD field effect transistor having a large reproducible saturation current |
US5541131A (en) * | 1991-02-01 | 1996-07-30 | Taiwan Semiconductor Manufacturing Co. | Peeling free metal silicide films using ion implantation |
US5340761A (en) * | 1991-10-31 | 1994-08-23 | Vlsi Technology, Inc. | Self-aligned contacts with gate overlapped lightly doped drain (goldd) structure |
WO1993009567A1 (en) * | 1991-10-31 | 1993-05-13 | Vlsi Technology, Inc. | Auxiliary gate lightly doped drain (agldd) structure with dielectric sidewalls |
KR950011983B1 (ko) * | 1992-11-23 | 1995-10-13 | 삼성전자주식회사 | 반도체 장치의 제조방법 |
US5268330A (en) * | 1992-12-11 | 1993-12-07 | International Business Machines Corporation | Process for improving sheet resistance of an integrated circuit device gate |
US5322809A (en) * | 1993-05-11 | 1994-06-21 | Texas Instruments Incorporated | Self-aligned silicide process |
US5604157A (en) * | 1995-05-25 | 1997-02-18 | Industrial Technology Research Institute | Reduced notching of polycide gates using silicon anti reflection layer |
US5849615A (en) * | 1996-02-22 | 1998-12-15 | Micron Technology, Inc. | Semiconductor processing method of fabricating field effect transistors |
TW320744B (en) * | 1997-01-15 | 1997-11-21 | Winbond Electronics Corp | Manufacturing method of self-aligned salicide |
US6610578B2 (en) | 1997-07-11 | 2003-08-26 | Telefonaktiebolaget Lm Ericsson (Publ) | Methods of manufacturing bipolar transistors for use at radio frequencies |
US6083836A (en) * | 1997-12-23 | 2000-07-04 | Texas Instruments Incorporated | Transistors with substitutionally formed gate structures and method |
JP3264241B2 (ja) * | 1998-02-10 | 2002-03-11 | 日本電気株式会社 | 半導体装置の製造方法 |
US6743683B2 (en) * | 2001-12-04 | 2004-06-01 | Intel Corporation | Polysilicon opening polish |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926874A1 (de) * | 1979-07-03 | 1981-01-22 | Siemens Ag | Verfahren zum herstellen von niederohmigen, diffundierten bereichen bei der silizium-gate-technologie |
US4254428A (en) * | 1979-12-28 | 1981-03-03 | International Business Machines Corporation | Self-aligned Schottky diode structure and method of fabrication |
JPS5799775A (en) * | 1980-12-12 | 1982-06-21 | Toshiba Corp | Manufacture of semiconductor device |
US4622735A (en) * | 1980-12-12 | 1986-11-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
US4374700A (en) * | 1981-05-29 | 1983-02-22 | Texas Instruments Incorporated | Method of manufacturing silicide contacts for CMOS devices |
US4476482A (en) * | 1981-05-29 | 1984-10-09 | Texas Instruments Incorporated | Silicide contacts for CMOS devices |
JPS58154270A (ja) * | 1982-03-09 | 1983-09-13 | Toshiba Corp | 半導体装置の製造方法 |
JPS59186374A (ja) * | 1983-04-07 | 1984-10-23 | Sony Corp | 半導体装置の製法 |
-
1985
- 1985-03-07 SE SE8501122A patent/SE453547B/sv not_active IP Right Cessation
-
1986
- 1986-03-04 DE DE8686902055T patent/DE3664978D1/de not_active Expired
- 1986-03-04 US US06/933,522 patent/US4740484A/en not_active Expired - Fee Related
- 1986-03-04 WO PCT/SE1986/000091 patent/WO1986005321A1/en active IP Right Grant
- 1986-03-04 JP JP61501755A patent/JPS62502301A/ja active Pending
- 1986-03-04 EP EP86902055A patent/EP0213197B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE453547B (sv) | 1988-02-08 |
EP0213197B1 (en) | 1989-08-09 |
WO1986005321A1 (en) | 1986-09-12 |
EP0213197A1 (en) | 1987-03-11 |
US4740484A (en) | 1988-04-26 |
JPS62502301A (ja) | 1987-09-03 |
SE8501122D0 (sv) | 1985-03-07 |
DE3664978D1 (en) | 1989-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
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