JPS6473643A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a disconnection due to stress migration from occurring by covering an insulating film becoming a mask for etching on a second conductor film, forming a resist pattern corresponding to a wiring pattern, sequentially patterning the insulating film, the second film and a first conductor film, and removing by dry etching means etching residue on a substrate with the insulating film for an etching mask as a mask. CONSTITUTION:An impurity diffused region 3 and a first inter layer insulating film 4, such as source/drain regions are formed on a region formed by a field oxide film 2 on a silicon substrate 1, and a contact window 5 for exposing the region 3 is formed. Then, it is covered with an Al-Si alloy film 6, a TiN film 7, and an SiO2 film 8. Thereafter, first and second resist patterns 9A, 9B corresponding to wiring patterns are formed on the film 8. Subsequently, with the patters 9A, 9B as masks the films 8, 7, 6 are sequentially patterned. Then, the patterns 9A, 9B are removed. Thereafter, with the same film 8 as a mask Si residue 10 covering the film 4 is removed. In this case, the film 7 is protected without etching.