SE0301350D0 - A thin-film solar cell - Google Patents
A thin-film solar cellInfo
- Publication number
- SE0301350D0 SE0301350D0 SE0301350A SE0301350A SE0301350D0 SE 0301350 D0 SE0301350 D0 SE 0301350D0 SE 0301350 A SE0301350 A SE 0301350A SE 0301350 A SE0301350 A SE 0301350A SE 0301350 D0 SE0301350 D0 SE 0301350D0
- Authority
- SE
- Sweden
- Prior art keywords
- thin
- film solar
- ald
- solar cell
- layer
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 abstract 3
- 229910007338 Zn(O,S) Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
US10/555,792 US20060180200A1 (en) | 2003-05-08 | 2004-05-05 | Thin-film solar cell |
JP2006508043A JP2006525671A (ja) | 2003-05-08 | 2004-05-05 | 薄膜太陽電池 |
CN2004800196933A CN1820358B (zh) | 2003-05-08 | 2004-05-05 | 薄膜太阳能电池及其形成方法、太阳能电池结构的生产线 |
EP04731270A EP1620888A1 (en) | 2003-05-08 | 2004-05-05 | A thin-film solar cell |
PCT/SE2004/000689 WO2004100250A1 (en) | 2003-05-08 | 2004-05-05 | A thin-film solar cell |
US12/788,963 US8865512B2 (en) | 2003-05-08 | 2010-05-27 | Thin-film solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
SE0301350D0 true SE0301350D0 (sv) | 2003-05-08 |
Family
ID=20291248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE0301350A SE0301350D0 (sv) | 2003-05-08 | 2003-05-08 | A thin-film solar cell |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060180200A1 (zh) |
EP (1) | EP1620888A1 (zh) |
JP (1) | JP2006525671A (zh) |
CN (1) | CN1820358B (zh) |
SE (1) | SE0301350D0 (zh) |
WO (1) | WO2004100250A1 (zh) |
Families Citing this family (90)
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JP6224532B2 (ja) * | 2014-06-27 | 2017-11-01 | 京セラ株式会社 | 光電変換装置 |
WO2017068923A1 (ja) * | 2015-10-19 | 2017-04-27 | ソーラーフロンティア株式会社 | 光電変換素子 |
KR101761565B1 (ko) | 2015-12-08 | 2017-07-26 | 주식회사 아바코 | 태양 전지 및 이의 제조 방법 |
CN105870214A (zh) * | 2016-04-14 | 2016-08-17 | 董友强 | 一种铜铟镓硒薄膜太阳电池 |
CN106784076A (zh) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | 一种铜铟镓硒薄膜太阳电池缓冲层的制备方法 |
CN111584643A (zh) * | 2019-02-15 | 2020-08-25 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池及其制造方法 |
KR102710891B1 (ko) * | 2022-04-12 | 2024-09-30 | 서울대학교산학협력단 | 탠덤 태양전지 및 이의 제조방법 |
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US4611091A (en) * | 1984-12-06 | 1986-09-09 | Atlantic Richfield Company | CuInSe2 thin film solar cell with thin CdS and transparent window layer |
US5078804A (en) * | 1989-06-27 | 1992-01-07 | The Boeing Company | I-III-VI2 based solar cell utilizing the structure CuInGaSe2 CdZnS/ZnO |
DE4447865B4 (de) | 1994-11-16 | 2006-06-14 | Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg | Verbindungshalbleiter-Dünnschichtsolarzelle mit Alkalimetallzusatz und Verfahren zur Herstellung |
JP3249407B2 (ja) | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池 |
US5948176A (en) * | 1997-09-29 | 1999-09-07 | Midwest Research Institute | Cadmium-free junction fabrication process for CuInSe2 thin film solar cells |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
US6107562A (en) * | 1998-03-24 | 2000-08-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method for manufacturing the same, and solar cell using the same |
JPH11330507A (ja) * | 1998-05-12 | 1999-11-30 | Yazaki Corp | 太陽電池 |
JP3434259B2 (ja) * | 1999-03-05 | 2003-08-04 | 松下電器産業株式会社 | 太陽電池 |
US6259016B1 (en) * | 1999-03-05 | 2001-07-10 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
US7019208B2 (en) * | 2001-11-20 | 2006-03-28 | Energy Photovoltaics | Method of junction formation for CIGS photovoltaic devices |
JP2003179237A (ja) * | 2001-12-10 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体薄膜の製造方法および太陽電池 |
CN1151560C (zh) * | 2002-03-08 | 2004-05-26 | 清华大学 | 一种铜铟镓硒薄膜太阳能电池及其制备方法 |
US7221017B2 (en) * | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide-conductor nanolaminates |
WO2004032189A2 (en) * | 2002-09-30 | 2004-04-15 | Miasolé | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
US6979838B2 (en) * | 2003-09-03 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof |
US7663057B2 (en) * | 2004-02-19 | 2010-02-16 | Nanosolar, Inc. | Solution-based fabrication of photovoltaic cell |
US7432139B2 (en) * | 2005-06-29 | 2008-10-07 | Amberwave Systems Corp. | Methods for forming dielectrics and metal electrodes |
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2003
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2004
- 2004-05-05 US US10/555,792 patent/US20060180200A1/en not_active Abandoned
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- 2004-05-05 WO PCT/SE2004/000689 patent/WO2004100250A1/en active Application Filing
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US20100233841A1 (en) | 2010-09-16 |
WO2004100250A1 (en) | 2004-11-18 |
EP1620888A1 (en) | 2006-02-01 |
CN1820358A (zh) | 2006-08-16 |
CN1820358B (zh) | 2010-10-13 |
US8865512B2 (en) | 2014-10-21 |
JP2006525671A (ja) | 2006-11-09 |
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