SE0300784D0 - Electrical connections in substrates - Google Patents

Electrical connections in substrates

Info

Publication number
SE0300784D0
SE0300784D0 SE0300784A SE0300784A SE0300784D0 SE 0300784 D0 SE0300784 D0 SE 0300784D0 SE 0300784 A SE0300784 A SE 0300784A SE 0300784 A SE0300784 A SE 0300784A SE 0300784 D0 SE0300784 D0 SE 0300784D0
Authority
SE
Sweden
Prior art keywords
substrate
conducting
trench
micro
semi
Prior art date
Application number
SE0300784A
Other languages
English (en)
Other versions
SE0300784L (sv
SE526366C3 (sv
SE526366C2 (sv
Inventor
Thorbjoern Ebefors
Edvard Kaelvesten
Niklas Svedin
Tommy Huhtaoja
Pelle Rangsten
Original Assignee
Silex Microsystems Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silex Microsystems Ab filed Critical Silex Microsystems Ab
Priority to SE0300784A priority Critical patent/SE526366C3/sv
Publication of SE0300784D0 publication Critical patent/SE0300784D0/sv
Priority to EP04722492.8A priority patent/EP1609180B1/en
Priority to JP2006507977A priority patent/JP4944605B2/ja
Priority to US10/550,199 priority patent/US7560802B2/en
Priority to DK04722492.8T priority patent/DK1609180T3/da
Priority to CN2004800139324A priority patent/CN1791975B/zh
Priority to KR1020057017686A priority patent/KR101123002B1/ko
Priority to PCT/SE2004/000439 priority patent/WO2004084300A1/en
Priority to CA2519893A priority patent/CA2519893C/en
Publication of SE0300784L publication Critical patent/SE0300784L/sv
Publication of SE526366C2 publication Critical patent/SE526366C2/sv
Publication of SE526366C3 publication Critical patent/SE526366C3/sv
Priority to HK06104564.2A priority patent/HK1084236A1/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0006—Interconnects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Combinations Of Printed Boards (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
SE0300784A 2003-03-21 2003-03-21 Elektriska anslutningar i substrat SE526366C3 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE0300784A SE526366C3 (sv) 2003-03-21 2003-03-21 Elektriska anslutningar i substrat
CA2519893A CA2519893C (en) 2003-03-21 2004-03-22 Electrical connections in substrates
DK04722492.8T DK1609180T3 (da) 2003-03-21 2004-03-22 Elektriske forbindelser i substrater
JP2006507977A JP4944605B2 (ja) 2003-03-21 2004-03-22 基板中の電気的接続
US10/550,199 US7560802B2 (en) 2003-03-21 2004-03-22 Electrical connections in substrates
EP04722492.8A EP1609180B1 (en) 2003-03-21 2004-03-22 Electrical connections in substrates
CN2004800139324A CN1791975B (zh) 2003-03-21 2004-03-22 衬底内的电连线制造方法及衬底
KR1020057017686A KR101123002B1 (ko) 2003-03-21 2004-03-22 기판의 전기 접속부
PCT/SE2004/000439 WO2004084300A1 (en) 2003-03-21 2004-03-22 Electrical connections in substrates
HK06104564.2A HK1084236A1 (en) 2003-03-21 2006-04-13 Electrical connections in substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0300784A SE526366C3 (sv) 2003-03-21 2003-03-21 Elektriska anslutningar i substrat

Publications (4)

Publication Number Publication Date
SE0300784D0 true SE0300784D0 (sv) 2003-03-21
SE0300784L SE0300784L (sv) 2004-09-22
SE526366C2 SE526366C2 (sv) 2005-08-30
SE526366C3 SE526366C3 (sv) 2005-10-26

Family

ID=20290745

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0300784A SE526366C3 (sv) 2003-03-21 2003-03-21 Elektriska anslutningar i substrat

Country Status (10)

Country Link
US (1) US7560802B2 (sv)
EP (1) EP1609180B1 (sv)
JP (1) JP4944605B2 (sv)
KR (1) KR101123002B1 (sv)
CN (1) CN1791975B (sv)
CA (1) CA2519893C (sv)
DK (1) DK1609180T3 (sv)
HK (1) HK1084236A1 (sv)
SE (1) SE526366C3 (sv)
WO (1) WO2004084300A1 (sv)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200644165A (en) * 2005-05-04 2006-12-16 Icemos Technology Corp Silicon wafer having through-wafer vias
CN101223633A (zh) * 2005-05-18 2008-07-16 科隆科技公司 穿过晶片的互连
JP4885211B2 (ja) 2005-05-18 2012-02-29 コロ テクノロジーズ インコーポレイテッド 微細電子機械変換器
US8154131B2 (en) * 2005-06-14 2012-04-10 Cufer Asset Ltd. L.L.C. Profiled contact
US7215032B2 (en) * 2005-06-14 2007-05-08 Cubic Wafer, Inc. Triaxial through-chip connection
US7838997B2 (en) * 2005-06-14 2010-11-23 John Trezza Remote chip attachment
US7786592B2 (en) 2005-06-14 2010-08-31 John Trezza Chip capacitive coupling
US8456015B2 (en) * 2005-06-14 2013-06-04 Cufer Asset Ltd. L.L.C. Triaxial through-chip connection
US7687400B2 (en) * 2005-06-14 2010-03-30 John Trezza Side stacking apparatus and method
US7781886B2 (en) 2005-06-14 2010-08-24 John Trezza Electronic chip contact structure
US20060281303A1 (en) * 2005-06-14 2006-12-14 John Trezza Tack & fuse chip bonding
US7560813B2 (en) 2005-06-14 2009-07-14 John Trezza Chip-based thermo-stack
US7851348B2 (en) * 2005-06-14 2010-12-14 Abhay Misra Routingless chip architecture
WO2006134580A2 (en) 2005-06-17 2006-12-21 Kolo Technologies, Inc. Micro-electro-mechanical transducer having an insulation extension
US7880565B2 (en) 2005-08-03 2011-02-01 Kolo Technologies, Inc. Micro-electro-mechanical transducer having a surface plate
DE102005039068A1 (de) * 2005-08-11 2007-02-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleitersubstrat und Verfahren zur Herstellung
US20070042563A1 (en) * 2005-08-19 2007-02-22 Honeywell International Inc. Single crystal based through the wafer connections technical field
US7539003B2 (en) * 2005-12-01 2009-05-26 Lv Sensors, Inc. Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes
US8308960B2 (en) 2005-12-14 2012-11-13 Silex Microsystems Ab Methods for making micro needles and applications thereof
EP1987535B1 (en) 2006-02-01 2011-06-01 Silex Microsystems AB Method of making vias
EP2002477B1 (en) * 2006-03-27 2011-12-21 Philips Intellectual Property & Standards GmbH A fabrication method for a low ohmic through substrate connection for semiconductor carriers
US7687397B2 (en) * 2006-06-06 2010-03-30 John Trezza Front-end processed wafer having through-chip connections
US20070281460A1 (en) * 2006-06-06 2007-12-06 Cubic Wafer, Inc. Front-end processed wafer having through-chip connections
SE530415C2 (sv) 2006-09-04 2008-05-27 Nanospace Ab Gastrustor
WO2008083284A2 (en) * 2006-12-29 2008-07-10 Cufer Asset Ltd. L.L.C. Front-end processed wafer having through-chip connections
SE533579C2 (sv) 2007-01-25 2010-10-26 Silex Microsystems Ab Metod för mikrokapsling och mikrokapslar
US7670874B2 (en) * 2007-02-16 2010-03-02 John Trezza Plated pillar package formation
JP4792143B2 (ja) * 2007-02-22 2011-10-12 株式会社デンソー 半導体装置およびその製造方法
US7585750B2 (en) * 2007-05-04 2009-09-08 Stats Chippac, Ltd. Semiconductor package having through-hole via on saw streets formed with partial saw
FR2916056A1 (fr) * 2007-05-10 2008-11-14 St Microelectronics Sa Exploration d'une cavite avec plusieurs capteurs d'image
US7894199B1 (en) * 2008-02-20 2011-02-22 Altera Corporation Hybrid package
US7737409B2 (en) 2008-06-12 2010-06-15 Analog Devices, Inc. Silicon detector and method for constructing silicon detectors
US9287438B1 (en) * 2008-07-16 2016-03-15 Solaero Technologies Corp. Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation
NO20083766L (no) 2008-09-01 2010-03-02 Idex Asa Overflatesensor
US8630033B2 (en) 2008-12-23 2014-01-14 Silex Microsystems Ab Via structure and method thereof
SE533992C2 (sv) 2008-12-23 2011-03-22 Silex Microsystems Ab Elektrisk anslutning i en struktur med isolerande och ledande lager
US8309973B2 (en) 2009-02-12 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-based sub-mount for an opto-electronic device
SE537499C2 (sv) 2009-04-30 2015-05-26 Silex Microsystems Ab Bondningsmaterialstruktur och process med bondningsmaterialstruktur
JP5330115B2 (ja) * 2009-06-17 2013-10-30 浜松ホトニクス株式会社 積層配線基板
US8492901B2 (en) * 2009-11-06 2013-07-23 International Business Machines Corporation Metal oxide semiconductor (MOS)-compatible high-aspect ratio through-wafer vias and low-stress configuration thereof
JP5218497B2 (ja) 2009-12-04 2013-06-26 株式会社デンソー 半導体装置およびその製造方法
FR2953992B1 (fr) 2009-12-15 2012-05-18 Commissariat Energie Atomique Realisation de structures d'interconnexions tsv formees d'un contour isolant et d'une zone conductrice situee dans le contour et disjointe du contour
NO20093601A1 (no) 2009-12-29 2011-06-30 Idex Asa Overflatesensor
US8288243B2 (en) * 2010-04-15 2012-10-16 Texas Instruments Incorporated Method for fabricating through substrate microchannels
US8492260B2 (en) 2010-08-30 2013-07-23 Semionductor Components Industries, LLC Processes of forming an electronic device including a feature in a trench
FR2964793B1 (fr) * 2010-09-09 2014-04-11 Ipdia Dispositif d'interposition
US8440544B2 (en) 2010-10-06 2013-05-14 International Business Machines Corporation CMOS structure and method of manufacture
JP5206826B2 (ja) 2011-03-04 2013-06-12 株式会社デンソー 領域分割基板およびそれを用いた半導体装置ならびにそれらの製造方法
SE536530C2 (sv) 2011-04-21 2014-02-04 Silex Microsystems Ab Startsubstrat för halvledarteknologi med substratgenomgåendekopplingar och en metod för tillverkning därav
SE538018C2 (sv) 2011-12-22 2016-02-09 Silex Microsystems Ab Isolering av mikrostrukturer
JP2013140838A (ja) * 2011-12-28 2013-07-18 Sumitomo Precision Prod Co Ltd 半導体装置及びその製造方法
SE538058C2 (sv) * 2012-03-30 2016-02-23 Silex Microsystems Ab Metod att tillhandahålla ett viahål och en routing-struktur
JP6154583B2 (ja) 2012-06-14 2017-06-28 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
SE537406C2 (sv) 2012-06-21 2015-04-21 Silex Microsystems Ab Halvledaranordning och metod för tillverkning av halvledaranordning med skivgenomgående anslutningar
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
US8981533B2 (en) 2012-09-13 2015-03-17 Semiconductor Components Industries, Llc Electronic device including a via and a conductive structure, a process of forming the same, and an interposer
US9030584B2 (en) 2013-03-18 2015-05-12 Omnivision Technologies, Inc. Image sensor with substrate noise isolation
CN103413785B (zh) * 2013-08-02 2015-08-26 南通富士通微电子股份有限公司 芯片切割方法及芯片封装方法
US9385187B2 (en) 2014-04-25 2016-07-05 Texas Instruments Incorporated High breakdown N-type buried layer
US9318376B1 (en) 2014-12-15 2016-04-19 Freescale Semiconductor, Inc. Through substrate via with diffused conductive component
CN106159073B (zh) * 2015-04-23 2020-06-16 晶元光电股份有限公司 发光元件及其制造方法
US9812354B2 (en) 2015-05-15 2017-11-07 Semiconductor Components Industries, Llc Process of forming an electronic device including a material defining a void
US10315915B2 (en) 2015-07-02 2019-06-11 Kionix, Inc. Electronic systems with through-substrate interconnects and MEMS device
US10158164B2 (en) 2015-10-30 2018-12-18 Essential Products, Inc. Handheld mobile device with hidden antenna formed of metal injection molded substrate
US9896777B2 (en) * 2015-10-30 2018-02-20 Essential Products, Inc. Methods of manufacturing structures having concealed components
US9882275B2 (en) 2015-10-30 2018-01-30 Essential Products, Inc. Antennas for handheld devices
US10546816B2 (en) * 2015-12-10 2020-01-28 Nexperia B.V. Semiconductor substrate with electrically isolating dielectric partition
KR102479946B1 (ko) * 2016-04-06 2022-12-22 해성디에스 주식회사 반도체 패키지 기판 및 그 제조방법
US10957537B2 (en) * 2018-11-12 2021-03-23 Hrl Laboratories, Llc Methods to design and uniformly co-fabricate small vias and large cavities through a substrate
EP3923315B1 (en) * 2020-06-11 2024-01-24 ASML Netherlands B.V. Manipulator, manipulator array, charged particle tool, multibeam charged particle tool, and method of manipulating a charged particle beam
CN117238840B (zh) * 2023-11-14 2024-02-27 合肥晶合集成电路股份有限公司 背照式图像传感器及制备方法、深沟槽隔离结构制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63278368A (ja) * 1987-05-11 1988-11-16 Nec Corp 半導体基板のバイアホ−ル形成方法
US5616421A (en) * 1991-04-08 1997-04-01 Aluminum Company Of America Metal matrix composites containing electrical insulators
US6002177A (en) * 1995-12-27 1999-12-14 International Business Machines Corporation High density integrated circuit packaging with chip stacking and via interconnections
JP3418548B2 (ja) * 1997-04-03 2003-06-23 株式会社山武 回路基板およびその製造方法
CN1187800C (zh) 1997-04-03 2005-02-02 株式会社山武 电路板以及检测器及其制造方法
EP0926726A1 (en) 1997-12-16 1999-06-30 STMicroelectronics S.r.l. Fabrication process and electronic device having front-back through contacts for bonding onto boards
JP3161524B2 (ja) * 1998-06-12 2001-04-25 日本電気株式会社 半導体装置、及びその製造方法
JP2000349087A (ja) * 1999-06-04 2000-12-15 Hitachi Ltd 半導体装置およびそれを用いた回路
FR2797140B1 (fr) 1999-07-30 2001-11-02 Thomson Csf Sextant Procede de fabrication de connexions traversantes dans un substrat et substrat equipe de telles connexions
FR2805709B1 (fr) * 2000-02-28 2002-05-17 Commissariat Energie Atomique Connexion electrique entre deux faces d'un substrat et procede de realisation
US6825967B1 (en) 2000-09-29 2004-11-30 Calient Networks, Inc. Shaped electrodes for micro-electro-mechanical-system (MEMS) devices to improve actuator performance and methods for fabricating the same
EP1195808B1 (en) * 2000-10-04 2007-08-15 Infineon Technologies AG Method of fabricating a thin, free-standing semiconductor device layer and of making a three-dimensionally integrated circuit
EP1412129A4 (en) * 2001-08-02 2008-04-02 Skc Co Ltd METHOD FOR PRODUCING A CHEMICAL-MECHANICAL POLISHING PILLOW USING LASER
EP1351288B1 (en) 2002-04-05 2015-10-28 STMicroelectronics Srl Process for manufacturing an insulated interconnection through a body of semiconductor material and corresponding semiconductor device

Also Published As

Publication number Publication date
JP4944605B2 (ja) 2012-06-06
HK1084236A1 (en) 2006-07-21
JP2006521022A (ja) 2006-09-14
EP1609180B1 (en) 2013-04-17
EP1609180A1 (en) 2005-12-28
CN1791975A (zh) 2006-06-21
CA2519893C (en) 2013-03-12
CN1791975B (zh) 2012-05-09
CA2519893A1 (en) 2004-09-30
WO2004084300A1 (en) 2004-09-30
KR20060003333A (ko) 2006-01-10
US7560802B2 (en) 2009-07-14
SE0300784L (sv) 2004-09-22
SE526366C3 (sv) 2005-10-26
DK1609180T3 (da) 2013-06-24
US20070020926A1 (en) 2007-01-25
KR101123002B1 (ko) 2012-03-16
SE526366C2 (sv) 2005-08-30

Similar Documents

Publication Publication Date Title
SE0300784D0 (sv) Electrical connections in substrates
CN100362650C (zh) 具有相对边电触点的半导体器件及其制造方法
ATE511703T1 (de) Herstellungsverfahren für durchkontakte
EP1291907A3 (en) Method of making high-voltage semiconductor devices
AU2002356039A1 (en) Methods of conducting wafer level burn-in of electronic devices
DK1956647T3 (da) Strömkredsarrangement med forbindelsesindretning og fremgangsmåde til fremstilling deraf
TW200509270A (en) Semiconductor package having semiconductor constructing body and method of manufacturing the same
TW200717887A (en) Thermoelectric device and method for fabricating the same and chip and electronic device
TW200741829A (en) Methods of forming through-wafer interconnects and structures resulting therefrom
TW200741968A (en) Butted contact structure and method for forming the same
TW200605282A (en) Manufacturing method of semiconductor device
TW200746357A (en) Semiconductor device manufacturing method and semiconductor device
MY147999A (en) Surface mountable chip
TW200509331A (en) Semiconductor chip package and method for making the same
TW200610116A (en) Micro-electronic package structure and method for fabricating the same
TW200721365A (en) Support structures for semiconductor devices
JP2009239249A (ja) 半導体装置およびその製造方法
TW200601485A (en) Semiconductor device substrate with wmbedded capacitor
JP2006319204A (ja) 半導体装置の製造方法、及び半導体装置
TW200603366A (en) Model-based insertion of irregular dummy features
WO2010034650A3 (de) Kontaktanordnung zur herstellung einer beabstandeten, elektrisch leitfähigen verbindung zwischen mikrostrukturierten bauteilen
GB2466163A (en) Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structure
TW200729320A (en) Method for manufacturing a semiconductor component
WO2005031827A3 (en) Semiconductor channel on insulator structure
GB2439883A (en) Integrated circuit and method of manufacture

Legal Events

Date Code Title Description
NUG Patent has lapsed