RU2225055C2 - Способ изготовления энергонезависимой полупроводниковой запоминающей ячейки с отдельным туннельным окном - Google Patents

Способ изготовления энергонезависимой полупроводниковой запоминающей ячейки с отдельным туннельным окном Download PDF

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Publication number
RU2225055C2
RU2225055C2 RU2002101921/28A RU2002101921A RU2225055C2 RU 2225055 C2 RU2225055 C2 RU 2225055C2 RU 2002101921/28 A RU2002101921/28 A RU 2002101921/28A RU 2002101921 A RU2002101921 A RU 2002101921A RU 2225055 C2 RU2225055 C2 RU 2225055C2
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RU
Russia
Prior art keywords
tunnel
layer
cell
region
window
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RU2002101921/28A
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English (en)
Russian (ru)
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RU2002101921A (ru
Inventor
Петер ВАВЕР (DE)
Петер ВАВЕР
Оливер ШПРИНГМАНН (DE)
Оливер ШПРИНГМАНН
Конрад ВОЛЬФ (DE)
Конрад ВОЛЬФ
Олаф ХАЙТЦШ (DE)
Олаф ХАЙТЦШ
Кай ХУККЕЛЬС (DE)
Кай ХУККЕЛЬС
Райнхольд РЕННЕКАМП (DE)
Райнхольд РЕННЕКАМП
Маик РЕРИХ (DE)
Маик РЕРИХ
ФОН КАМИНСКИ Элард ШТАЙН (DE)
ФОН КАМИНСКИ Элард ШТАЙН
Кристоф КУТТЕР (DE)
Кристоф КУТТЕР
Кристоф ЛУДВИГ (DE)
Кристоф ЛУДВИГ
Original Assignee
Инфинеон Текнолоджиз Аг
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Publication of RU2002101921A publication Critical patent/RU2002101921A/ru
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Publication of RU2225055C2 publication Critical patent/RU2225055C2/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
RU2002101921/28A 1999-06-28 2000-05-30 Способ изготовления энергонезависимой полупроводниковой запоминающей ячейки с отдельным туннельным окном RU2225055C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19929618A DE19929618B4 (de) 1999-06-28 1999-06-28 Verfahren zur Herstellung einer nichtflüchtigen Halbleiter-Speicherzelle mit separatem Tunnelfenster
DE19929618.9 1999-06-28

Publications (2)

Publication Number Publication Date
RU2002101921A RU2002101921A (ru) 2003-10-10
RU2225055C2 true RU2225055C2 (ru) 2004-02-27

Family

ID=7912849

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2002101921/28A RU2225055C2 (ru) 1999-06-28 2000-05-30 Способ изготовления энергонезависимой полупроводниковой запоминающей ячейки с отдельным туннельным окном

Country Status (11)

Country Link
US (1) US6645812B2 (de)
EP (1) EP1192652A1 (de)
JP (2) JP2003503851A (de)
KR (1) KR100447962B1 (de)
CN (1) CN1171293C (de)
BR (1) BR0011998A (de)
DE (1) DE19929618B4 (de)
MX (1) MXPA01013170A (de)
RU (1) RU2225055C2 (de)
UA (1) UA73508C2 (de)
WO (1) WO2001001476A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10235072A1 (de) * 2002-07-31 2004-02-26 Micronas Gmbh EEPROM-Struktur für Halbleiterspeicher
JP4393106B2 (ja) * 2003-05-14 2010-01-06 シャープ株式会社 表示用駆動装置及び表示装置、並びに携帯電子機器
JP4497290B2 (ja) * 2004-04-14 2010-07-07 富士通株式会社 半導体装置とその製造方法
CN113054001B (zh) * 2021-03-16 2021-11-09 中国电子科技集团公司第五十八研究所 可编程的电源开关器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112078A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of electrically rewritable fixed memory
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
JPS6325980A (ja) * 1986-07-17 1988-02-03 Nec Corp 不揮発性半導体記憶装置及びその製造方法
JPS6384168A (ja) * 1986-09-29 1988-04-14 Toshiba Corp 不揮発性半導体記憶装置
JP2792028B2 (ja) * 1988-03-07 1998-08-27 株式会社デンソー 半導体記憶装置およびその製造方法
JP2784765B2 (ja) * 1988-03-11 1998-08-06 セイコーインスツルメンツ株式会社 半導体不揮発性メモリの製造方法
JPH0334579A (ja) * 1989-06-30 1991-02-14 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
US5565371A (en) * 1990-04-12 1996-10-15 Texas Instruments Incorporated Method of making EPROM with separate erasing and programming regions
US5371031A (en) * 1990-08-01 1994-12-06 Texas Instruments Incorporated Method of making EEPROM array with buried N+ windows and with separate erasing and programming regions
US5596529A (en) * 1993-11-30 1997-01-21 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
JP3222705B2 (ja) * 1993-11-30 2001-10-29 東芝マイクロエレクトロニクス株式会社 不揮発性半導体記憶装置及びその製造方法
US5793081A (en) * 1994-03-25 1998-08-11 Nippon Steel Corporation Nonvolatile semiconductor storage device and method of manufacturing
US5633186A (en) * 1995-08-14 1997-05-27 Motorola, Inc. Process for fabricating a non-volatile memory cell in a semiconductor device
EP0782196A1 (de) * 1995-12-28 1997-07-02 STMicroelectronics S.r.l. Herstellungsverfahren für EEPROM-Speicherbauelemente und dadurch hergestellte EEPROM-Speicherbauelemente
TW437099B (en) * 1997-09-26 2001-05-28 Matsushita Electronics Corp Non-volatile semiconductor memory device and the manufacturing method thereof

Also Published As

Publication number Publication date
WO2001001476A1 (de) 2001-01-04
DE19929618B4 (de) 2006-07-13
US20020119626A1 (en) 2002-08-29
US6645812B2 (en) 2003-11-11
UA73508C2 (en) 2005-08-15
BR0011998A (pt) 2002-03-05
JP2006319362A (ja) 2006-11-24
CN1361924A (zh) 2002-07-31
KR100447962B1 (ko) 2004-09-08
KR20020019472A (ko) 2002-03-12
CN1171293C (zh) 2004-10-13
JP2003503851A (ja) 2003-01-28
DE19929618A1 (de) 2001-01-11
EP1192652A1 (de) 2002-04-03
MXPA01013170A (es) 2002-08-12

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20170531