UA73508C2 - Method for producing a nonvolatile semiconductor memory cell with a separate tunneling window - Google Patents
Method for producing a nonvolatile semiconductor memory cell with a separate tunneling window Download PDFInfo
- Publication number
- UA73508C2 UA73508C2 UA2001129149A UA2001129149A UA73508C2 UA 73508 C2 UA73508 C2 UA 73508C2 UA 2001129149 A UA2001129149 A UA 2001129149A UA 2001129149 A UA2001129149 A UA 2001129149A UA 73508 C2 UA73508 C2 UA 73508C2
- Authority
- UA
- Ukraine
- Prior art keywords
- tunnel
- layer
- region
- memory cell
- cell
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 230000005641 tunneling Effects 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 22
- 210000004027 cell Anatomy 0.000 claims description 104
- 238000002513 implantation Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 210000004725 window cell Anatomy 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000012447 hatching Effects 0.000 claims 1
- 238000012876 topography Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000006399 behavior Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 241001143779 Dorea Species 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19929618A DE19929618B4 (de) | 1999-06-28 | 1999-06-28 | Verfahren zur Herstellung einer nichtflüchtigen Halbleiter-Speicherzelle mit separatem Tunnelfenster |
| PCT/DE2000/001769 WO2001001476A1 (de) | 1999-06-28 | 2000-05-30 | Vefahren zur herstellung einer nichtflüchtigen halbleiter-speicherzelle mit separatem tunnelfenster |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| UA73508C2 true UA73508C2 (en) | 2005-08-15 |
Family
ID=7912849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| UA2001129149A UA73508C2 (en) | 1999-06-28 | 2000-05-30 | Method for producing a nonvolatile semiconductor memory cell with a separate tunneling window |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6645812B2 (de) |
| EP (1) | EP1192652A1 (de) |
| JP (2) | JP2003503851A (de) |
| KR (1) | KR100447962B1 (de) |
| CN (1) | CN1171293C (de) |
| BR (1) | BR0011998A (de) |
| DE (1) | DE19929618B4 (de) |
| MX (1) | MXPA01013170A (de) |
| RU (1) | RU2225055C2 (de) |
| UA (1) | UA73508C2 (de) |
| WO (1) | WO2001001476A1 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10235072A1 (de) * | 2002-07-31 | 2004-02-26 | Micronas Gmbh | EEPROM-Struktur für Halbleiterspeicher |
| JP4393106B2 (ja) * | 2003-05-14 | 2010-01-06 | シャープ株式会社 | 表示用駆動装置及び表示装置、並びに携帯電子機器 |
| JP4497290B2 (ja) * | 2004-04-14 | 2010-07-07 | 富士通株式会社 | 半導体装置とその製造方法 |
| CN113054001B (zh) * | 2021-03-16 | 2021-11-09 | 中国电子科技集团公司第五十八研究所 | 可编程的电源开关器件及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57112078A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of electrically rewritable fixed memory |
| US4477825A (en) * | 1981-12-28 | 1984-10-16 | National Semiconductor Corporation | Electrically programmable and erasable memory cell |
| US4608585A (en) * | 1982-07-30 | 1986-08-26 | Signetics Corporation | Electrically erasable PROM cell |
| JPS6325980A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JPS6384168A (ja) * | 1986-09-29 | 1988-04-14 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2792028B2 (ja) * | 1988-03-07 | 1998-08-27 | 株式会社デンソー | 半導体記憶装置およびその製造方法 |
| JP2784765B2 (ja) * | 1988-03-11 | 1998-08-06 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリの製造方法 |
| JPH0334579A (ja) * | 1989-06-30 | 1991-02-14 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
| US5565371A (en) * | 1990-04-12 | 1996-10-15 | Texas Instruments Incorporated | Method of making EPROM with separate erasing and programming regions |
| US5371031A (en) * | 1990-08-01 | 1994-12-06 | Texas Instruments Incorporated | Method of making EEPROM array with buried N+ windows and with separate erasing and programming regions |
| US5596529A (en) * | 1993-11-30 | 1997-01-21 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
| JP3222705B2 (ja) * | 1993-11-30 | 2001-10-29 | 東芝マイクロエレクトロニクス株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
| US5793081A (en) * | 1994-03-25 | 1998-08-11 | Nippon Steel Corporation | Nonvolatile semiconductor storage device and method of manufacturing |
| US5633186A (en) * | 1995-08-14 | 1997-05-27 | Motorola, Inc. | Process for fabricating a non-volatile memory cell in a semiconductor device |
| EP0782196A1 (de) * | 1995-12-28 | 1997-07-02 | STMicroelectronics S.r.l. | Herstellungsverfahren für EEPROM-Speicherbauelemente und dadurch hergestellte EEPROM-Speicherbauelemente |
| TW437099B (en) * | 1997-09-26 | 2001-05-28 | Matsushita Electronics Corp | Non-volatile semiconductor memory device and the manufacturing method thereof |
-
1999
- 1999-06-28 DE DE19929618A patent/DE19929618B4/de not_active Expired - Lifetime
-
2000
- 2000-05-30 UA UA2001129149A patent/UA73508C2/uk unknown
- 2000-05-30 RU RU2002101921/28A patent/RU2225055C2/ru not_active IP Right Cessation
- 2000-05-30 EP EP00943661A patent/EP1192652A1/de not_active Withdrawn
- 2000-05-30 CN CNB008095698A patent/CN1171293C/zh not_active Expired - Fee Related
- 2000-05-30 BR BR0011998-9A patent/BR0011998A/pt not_active IP Right Cessation
- 2000-05-30 WO PCT/DE2000/001769 patent/WO2001001476A1/de active IP Right Grant
- 2000-05-30 KR KR10-2001-7016646A patent/KR100447962B1/ko active IP Right Grant
- 2000-05-30 MX MXPA01013170A patent/MXPA01013170A/es active IP Right Grant
- 2000-05-30 JP JP2001506603A patent/JP2003503851A/ja not_active Withdrawn
-
2001
- 2001-12-28 US US10/033,949 patent/US6645812B2/en not_active Expired - Lifetime
-
2006
- 2006-07-19 JP JP2006197022A patent/JP2006319362A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR100447962B1 (ko) | 2004-09-08 |
| DE19929618A1 (de) | 2001-01-11 |
| DE19929618B4 (de) | 2006-07-13 |
| CN1171293C (zh) | 2004-10-13 |
| US6645812B2 (en) | 2003-11-11 |
| MXPA01013170A (es) | 2002-08-12 |
| JP2006319362A (ja) | 2006-11-24 |
| EP1192652A1 (de) | 2002-04-03 |
| WO2001001476A1 (de) | 2001-01-04 |
| RU2225055C2 (ru) | 2004-02-27 |
| JP2003503851A (ja) | 2003-01-28 |
| KR20020019472A (ko) | 2002-03-12 |
| CN1361924A (zh) | 2002-07-31 |
| US20020119626A1 (en) | 2002-08-29 |
| BR0011998A (pt) | 2002-03-05 |
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