RU2009146439A - Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство - Google Patents
Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство Download PDFInfo
- Publication number
- RU2009146439A RU2009146439A RU2009146439/05A RU2009146439A RU2009146439A RU 2009146439 A RU2009146439 A RU 2009146439A RU 2009146439/05 A RU2009146439/05 A RU 2009146439/05A RU 2009146439 A RU2009146439 A RU 2009146439A RU 2009146439 A RU2009146439 A RU 2009146439A
- Authority
- RU
- Russia
- Prior art keywords
- epoxy resin
- component
- formula
- thermosetting
- acid anhydride
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract 20
- 239000003822 epoxy resin Substances 0.000 title claims abstract 18
- 229920000647 polyepoxide Polymers 0.000 title claims abstract 18
- 239000004065 semiconductor Substances 0.000 title claims 4
- 238000001029 thermal curing Methods 0.000 title 1
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract 13
- 150000008065 acid anhydrides Chemical class 0.000 claims abstract 7
- -1 carboxylate ester Chemical class 0.000 claims abstract 7
- 150000001875 compounds Chemical class 0.000 claims abstract 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract 6
- 239000000463 material Substances 0.000 claims abstract 5
- 239000011541 reaction mixture Substances 0.000 claims abstract 5
- 150000003918 triazines Chemical class 0.000 claims abstract 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract 4
- 239000003054 catalyst Substances 0.000 claims abstract 4
- 125000003700 epoxy group Chemical group 0.000 claims abstract 4
- 239000011256 inorganic filler Substances 0.000 claims abstract 3
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract 3
- 125000004018 acid anhydride group Chemical group 0.000 claims abstract 2
- 239000012779 reinforcing material Substances 0.000 claims abstract 2
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 claims 2
- 239000004593 Epoxy Substances 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 150000000182 1,3,5-triazines Chemical class 0.000 claims 1
- 229910004762 CaSiO Inorganic materials 0.000 claims 1
- YQEMORVAKMFKLG-UHFFFAOYSA-N glycerine monostearate Natural products CCCCCCCCCCCCCCCCCC(=O)OC(CO)CO YQEMORVAKMFKLG-UHFFFAOYSA-N 0.000 claims 1
- SVUQHVRAGMNPLW-UHFFFAOYSA-N glycerol monostearate Natural products CCCCCCCCCCCCCCCCC(=O)OCC(O)CO SVUQHVRAGMNPLW-UHFFFAOYSA-N 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 229910052604 silicate mineral Inorganic materials 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 239000006082 mold release agent Substances 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/182—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
- C08G59/186—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents with acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3236—Heterocylic compounds
- C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
- C08G59/5046—Amines heterocyclic
- C08G59/5053—Amines heterocyclic containing only nitrogen as a heteroatom
- C08G59/508—Amines heterocyclic containing only nitrogen as a heteroatom having three nitrogen atoms in the ring
- C08G59/5086—Triazines; Melamines; Guanamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
- C08L63/06—Triglycidylisocyanurates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Led Device Packages (AREA)
Abstract
1. Термоотверждающаяся композиция эпоксидной смолы, содержащая ! (А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эквивалента эпоксидной группы к эквиваленту ангидрида кислоты 0,6-2,0; ! (В) внутренний агент высвобождения из формы; ! (С) отражающий материал; ! (D) неорганический наполнитель; ! (Е) катализатор отверждения; ! где внутренний агент высвобождения из формы компонента (В) содержит в комбинации сложный карбоксилатный эфир, представленный следующей общей формулой (1): ! ! в которой R11 и R12 представляют собой независимо алкильную группу, представленную CnH2n+1, где n представляет собой число от 1 до 30, ! и соединение, представленное следующей общей формулой (2): ! ! в которой R1, R2 и R3 независимо выбраны из Н, -ОН, -OR и -OCOCaHb при условии, что, по меньшей мере, один из R1, R2 и R3 включает -OCOCaHb; R представляет собой алкильную группу, представленную CnH2n+1, в которой n представляет собой целое число от 1 до 30, а представляет собой целое число от 10 до 30, b представляет собой целое число от 17 до 61. ! 2. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой общее содержание сложного карбоксилатного эфира формулы (1) и соединения формулы (2) во всей композиции составляет 0,2-5,0 мас.%, и массовое отношение сложного карбоксилатного эфира формулы (1) к соединению формулы (2) находится в интервале от 1:5 до 10:1. ! 3. Термоотверждающаяся композиция эпоксидной смолы, содержащая ! (А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эпоксидной группы к группе ангидрида кислоты составляет 0,6-2,0, ! (F) упрочняющий материал, ! (В) внутренний агент высвобождения из формы, ! (С
Claims (10)
1. Термоотверждающаяся композиция эпоксидной смолы, содержащая
(А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эквивалента эпоксидной группы к эквиваленту ангидрида кислоты 0,6-2,0;
(В) внутренний агент высвобождения из формы;
(С) отражающий материал;
(D) неорганический наполнитель;
(Е) катализатор отверждения;
где внутренний агент высвобождения из формы компонента (В) содержит в комбинации сложный карбоксилатный эфир, представленный следующей общей формулой (1):
в которой R11 и R12 представляют собой независимо алкильную группу, представленную CnH2n+1, где n представляет собой число от 1 до 30,
и соединение, представленное следующей общей формулой (2):
в которой R1, R2 и R3 независимо выбраны из Н, -ОН, -OR и -OCOCaHb при условии, что, по меньшей мере, один из R1, R2 и R3 включает -OCOCaHb; R представляет собой алкильную группу, представленную CnH2n+1, в которой n представляет собой целое число от 1 до 30, а представляет собой целое число от 10 до 30, b представляет собой целое число от 17 до 61.
2. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой общее содержание сложного карбоксилатного эфира формулы (1) и соединения формулы (2) во всей композиции составляет 0,2-5,0 мас.%, и массовое отношение сложного карбоксилатного эфира формулы (1) к соединению формулы (2) находится в интервале от 1:5 до 10:1.
3. Термоотверждающаяся композиция эпоксидной смолы, содержащая
(А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эпоксидной группы к группе ангидрида кислоты составляет 0,6-2,0,
(F) упрочняющий материал,
(В) внутренний агент высвобождения из формы,
(С) отражающий материал,
(D) неорганический наполнитель и
(Е) катализатор отверждения
где компонент (F) представляет собой триклинный силикатный минерал, представленный химической формулой CaSiO3.
4. Термоотверждающаяся композиция эпоксидной смолы по п.3, в которой содержание упрочняющего материала компонента (F) составляет 1-80 мас.% всей композиции.
5. Термоотверждающаяся композиция эпоксидной смолы по п.3, в которой внутренний агент высвобождения из формы компонента (В) содержит глицеринмоностеарат, имеющий температуру плавления 50-70°C, и содержание внутреннего агента высвобождения из формы составляет 0,2-5,0 мас.% всей композиции.
6. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой отражающим материалом компонента (С) является диоксид титана, который имеет поверхность, обработанную неорганическим или органическим веществом; содержание свинца в компоненте (С) составляет до 10 ч./млн; содержание компонента (С) по отношению ко всей композиции составляет 2-80 мас.%; катализатором отверждения компонента (Е) является октилат третичного амина; содержание компонента (Е) составляет 0,05-5 мас.% по отношению ко всей композиции.
7. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой триазинпроизводной эпоксидной смолой является 1,3,5-триазинпроизводная эпоксидная смола.
9. Термоотверждающаяся композиция эпоксидной смолы по п.1, которая предназначена для использования в формовании корпуса полупроводникового элемента.
10. Полупроводниковое устройство, содержащее полупроводниковый элемент, капсулированный отвержденным продуктом термоотверждающейся композиции эпоксидной смолы по п.1.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008318429A JP5182512B2 (ja) | 2008-12-15 | 2008-12-15 | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
JP2008-318429 | 2008-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
RU2009146439A true RU2009146439A (ru) | 2011-06-20 |
RU2528849C2 RU2528849C2 (ru) | 2014-09-20 |
Family
ID=41718793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2009146439/05A RU2528849C2 (ru) | 2008-12-15 | 2009-12-14 | Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство |
Country Status (8)
Country | Link |
---|---|
US (1) | US9303115B2 (ru) |
EP (1) | EP2196501B1 (ru) |
JP (1) | JP5182512B2 (ru) |
KR (1) | KR101686500B1 (ru) |
CN (1) | CN101792572B (ru) |
DE (1) | DE602009001233D1 (ru) |
RU (1) | RU2528849C2 (ru) |
TW (1) | TWI485175B (ru) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6133004B2 (ja) * | 2009-03-31 | 2017-05-24 | 日立化成株式会社 | 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 |
SI2414444T1 (sl) * | 2009-04-02 | 2013-08-30 | Huntsman Advanced Materials (Switzerland) Gmbh | Neposredno zabrizgavanje |
TWI403003B (zh) * | 2009-10-02 | 2013-07-21 | Chi Mei Lighting Tech Corp | 發光二極體及其製造方法 |
JP5545246B2 (ja) * | 2010-03-30 | 2014-07-09 | 信越化学工業株式会社 | 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置 |
US9028123B2 (en) | 2010-04-16 | 2015-05-12 | Flex Lighting Ii, Llc | Display illumination device with a film-based lightguide having stacked incident surfaces |
CA2796519A1 (en) | 2010-04-16 | 2011-10-20 | Flex Lighting Ii, Llc | Illumination device comprising a film-based lightguide |
JP2012041403A (ja) * | 2010-08-16 | 2012-03-01 | Shin-Etsu Chemical Co Ltd | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
JP2012077235A (ja) * | 2010-10-05 | 2012-04-19 | Nitto Denko Corp | 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
JP5557770B2 (ja) * | 2011-02-16 | 2014-07-23 | 信越化学工業株式会社 | 熱硬化性エポキシ樹脂組成物、光半導体装置用反射部材及び光半導体装置 |
JP2012172012A (ja) * | 2011-02-18 | 2012-09-10 | Shin-Etsu Chemical Co Ltd | 熱硬化性エポキシ樹脂組成物及び光半導体装置 |
US10147853B2 (en) * | 2011-03-18 | 2018-12-04 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
KR101092015B1 (ko) * | 2011-05-03 | 2011-12-08 | 주식회사 네패스신소재 | 열경화형 광반사용 수지 조성물, 이의 제조 방법, 이로부터 제조된 광반도체 소자 탑재용 반사판, 및 이를 포함하는 광반도체 장치 |
CN102931329B (zh) * | 2011-08-08 | 2015-01-07 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
JP5650097B2 (ja) * | 2011-11-09 | 2015-01-07 | 信越化学工業株式会社 | 熱硬化性エポキシ樹脂組成物及び光半導体装置 |
JP2013239540A (ja) * | 2012-05-14 | 2013-11-28 | Shin Etsu Chem Co Ltd | 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法 |
US9887327B2 (en) | 2012-06-11 | 2018-02-06 | Cree, Inc. | LED package with encapsulant having curved and planar surfaces |
US9818919B2 (en) | 2012-06-11 | 2017-11-14 | Cree, Inc. | LED package with multiple element light source and encapsulant having planar surfaces |
US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
JP5924840B2 (ja) * | 2013-03-19 | 2016-05-25 | 信越化学工業株式会社 | 熱硬化性エポキシ樹脂組成物 |
US9461024B2 (en) | 2013-08-01 | 2016-10-04 | Cree, Inc. | Light emitter devices and methods for light emitting diode (LED) chips |
USD758976S1 (en) | 2013-08-08 | 2016-06-14 | Cree, Inc. | LED package |
JP6233229B2 (ja) * | 2014-07-22 | 2017-11-22 | 信越化学工業株式会社 | 光半導体素子封止用熱硬化性エポキシ樹脂組成物及びそれを用いた光半導体装置 |
USD790486S1 (en) | 2014-09-30 | 2017-06-27 | Cree, Inc. | LED package with truncated encapsulant |
JP6311626B2 (ja) | 2015-02-20 | 2018-04-18 | 信越化学工業株式会社 | Ledリフレクター用白色熱硬化性エポキシ樹脂組成物 |
JP6517043B2 (ja) * | 2015-02-25 | 2019-05-22 | ルネサスエレクトロニクス株式会社 | 光結合装置、光結合装置の製造方法および電力変換システム |
USD777122S1 (en) | 2015-02-27 | 2017-01-24 | Cree, Inc. | LED package |
USD783547S1 (en) | 2015-06-04 | 2017-04-11 | Cree, Inc. | LED package |
JP6841551B2 (ja) * | 2015-06-29 | 2021-03-10 | 株式会社クラレ | Led反射板用ポリアミド組成物、led反射板、該反射板を備えた発光装置 |
JP2017082027A (ja) * | 2015-10-22 | 2017-05-18 | 信越化学工業株式会社 | フォトカプラー一次封止用熱硬化性エポキシ樹脂組成物 |
US10279519B2 (en) | 2015-12-30 | 2019-05-07 | The United States Of America, As Represented By The Secretary Of The Navy | Mold assembly and method of molding a component |
JP6191705B2 (ja) * | 2016-01-04 | 2017-09-06 | 日立化成株式会社 | 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 |
JP7065381B2 (ja) * | 2016-07-19 | 2022-05-12 | パナソニックIpマネジメント株式会社 | 光反射体、ベース体、発光装置及びベース体の製造方法 |
WO2018160520A1 (en) * | 2017-03-01 | 2018-09-07 | Purdue Research Foundation | Epoxy tannin reaction product compositions |
RU2769911C2 (ru) * | 2019-08-05 | 2022-04-08 | Акционерное общество "ЭНПЦ Эпитал" | Полимерная композиция |
JP6838688B1 (ja) * | 2019-11-25 | 2021-03-03 | 株式会社村田製作所 | Rficモジュール、rfidタグ及びそれらの製造方法 |
CN111040702B (zh) * | 2019-12-31 | 2022-10-11 | 无锡创达新材料股份有限公司 | 一种led反射杯用的有机硅环氧树脂组合物及其固化物 |
CN111040703A (zh) * | 2019-12-31 | 2020-04-21 | 无锡创达新材料股份有限公司 | 一种应用于led反射杯的环氧树脂组合物及其固化物 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH548431A (de) | 1971-05-25 | 1974-04-30 | Ciba Geigy Ag | Lagerstabile, schnellhaertende epoxidharzpressmassen. |
JP2656336B2 (ja) | 1989-01-18 | 1997-09-24 | 日東電工株式会社 | 光半導体装置およびそれに用いる光半導体封止用エポキシ樹脂組成物 |
JPH0799915B2 (ja) * | 1989-08-26 | 1995-10-25 | 株式会社日立製作所 | 回転電機の回転子及びその絶縁方法 |
JPH10158477A (ja) * | 1996-11-28 | 1998-06-16 | Nitto Denko Corp | 半導体封止用エポキシ樹脂組成物 |
JP3618238B2 (ja) | 1998-12-25 | 2005-02-09 | 日亜化学工業株式会社 | 発光ダイオード |
JP3489025B2 (ja) * | 2000-01-14 | 2004-01-19 | 大塚化学ホールディングス株式会社 | エポキシ樹脂組成物及びそれを用いた電子部品 |
JP2001234032A (ja) | 2000-02-24 | 2001-08-28 | Sumitomo Bakelite Co Ltd | 光半導体封止用エポキシ樹脂組成物 |
JP3512732B2 (ja) | 2000-11-09 | 2004-03-31 | 京セラケミカル株式会社 | 封止用樹脂組成物および電子部品封止装置 |
JP3897282B2 (ja) * | 2000-11-28 | 2007-03-22 | 住友ベークライト株式会社 | 光半導体封止用エポキシ樹脂組成物及び光半導体装置 |
JP3891554B2 (ja) | 2001-01-30 | 2007-03-14 | 住友ベークライト株式会社 | 光半導体封止用エポキシ樹脂組成物及び光半導体装置 |
US6989412B2 (en) * | 2001-06-06 | 2006-01-24 | Henkel Corporation | Epoxy molding compounds containing phosphor and process for preparing such compositions |
JP4250949B2 (ja) | 2001-11-01 | 2009-04-08 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US6924596B2 (en) * | 2001-11-01 | 2005-08-02 | Nichia Corporation | Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same |
JP2003302533A (ja) * | 2002-04-12 | 2003-10-24 | Hitachi Cable Ltd | 光ファイバ収納トレイの支持部材及びそれを用いた成端箱 |
WO2005073321A1 (ja) * | 2004-01-30 | 2005-08-11 | Zeon Corporation | 樹脂組成物 |
JP2005239912A (ja) * | 2004-02-27 | 2005-09-08 | Sumitomo Bakelite Co Ltd | 光半導体封止用エポキシ樹脂組成物及び光半導体装置 |
JP2005306952A (ja) | 2004-04-20 | 2005-11-04 | Japan Epoxy Resin Kk | 発光素子封止材用エポキシ樹脂組成物 |
CN101283016B (zh) * | 2005-08-04 | 2011-05-11 | 信越化学工业株式会社 | 热固性环氧树脂组合物及半导体装置 |
JP5072309B2 (ja) * | 2006-09-29 | 2012-11-14 | 株式会社日本触媒 | 樹脂組成物及びその製造方法 |
KR101090654B1 (ko) * | 2006-10-02 | 2011-12-07 | 히다치 가세고교 가부시끼가이샤 | 밀봉용 에폭시 수지 성형 재료 및 전자 부품 장치 |
JP5470680B2 (ja) * | 2007-02-06 | 2014-04-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに成形体 |
JP2008189833A (ja) * | 2007-02-06 | 2008-08-21 | Shin Etsu Chem Co Ltd | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
JP2008189827A (ja) | 2007-02-06 | 2008-08-21 | Shin Etsu Chem Co Ltd | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
US20080255283A1 (en) * | 2007-02-06 | 2008-10-16 | Takayuki Aoki | Thermosetting epoxy resin composition and semiconductor device |
-
2008
- 2008-12-15 JP JP2008318429A patent/JP5182512B2/ja active Active
-
2009
- 2009-12-07 DE DE602009001233T patent/DE602009001233D1/de active Active
- 2009-12-07 EP EP09252742A patent/EP2196501B1/en active Active
- 2009-12-07 TW TW098141721A patent/TWI485175B/zh active
- 2009-12-11 KR KR1020090122849A patent/KR101686500B1/ko active IP Right Grant
- 2009-12-14 US US12/637,359 patent/US9303115B2/en active Active
- 2009-12-14 RU RU2009146439/05A patent/RU2528849C2/ru active
- 2009-12-15 CN CN200910260492.7A patent/CN101792572B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20100148380A1 (en) | 2010-06-17 |
KR20100069584A (ko) | 2010-06-24 |
DE602009001233D1 (de) | 2011-06-16 |
KR101686500B1 (ko) | 2016-12-14 |
EP2196501A1 (en) | 2010-06-16 |
CN101792572A (zh) | 2010-08-04 |
US9303115B2 (en) | 2016-04-05 |
TWI485175B (zh) | 2015-05-21 |
TW201038611A (en) | 2010-11-01 |
EP2196501B1 (en) | 2011-05-04 |
RU2528849C2 (ru) | 2014-09-20 |
CN101792572B (zh) | 2014-07-02 |
JP2010138347A (ja) | 2010-06-24 |
JP5182512B2 (ja) | 2013-04-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
RU2009146439A (ru) | Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство | |
ES2881284T3 (es) | Sistemas de fijación con sustancias de relleno de partículas finas | |
ES2621154T3 (es) | Composiciones de benzoxazina con cauchos de núcleo-envoltura | |
DE602005010749D1 (de) | Härtbare zusammensetzung | |
RU2015106941A (ru) | Полимер, содержащий тиоловые группы, и включающая его отверждаемая композиция | |
TWI455990B (zh) | 環氧樹脂組成物及半導體裝置 | |
ATE552310T1 (de) | Unterfüllungszusammensetzung und optisches halbleiterbauelement | |
DE602006003085D1 (de) | Härtbare silikonzusammensetzung und elektronische komponenten | |
RU2013142992A (ru) | Характеризующиеся высокой латентностью отвердители для эпоксидных смол | |
TW200801110A (en) | Resin composition for semiconductor encapsulation and semiconductor device | |
ATE540022T1 (de) | Blends enthaltend epoxidharze und mischungen von aminen mit guanidin-derivaten | |
MY165894A (en) | Epoxy resin molding material for encapsulation and electronic component device including element encapsulated with same | |
RU2006107927A (ru) | Нанонаполненные композиционные материалы с исключительно высокой температурой стеклования | |
JP2016156002A (ja) | 硬化性樹脂組成物及びそれを用いてなる封止材 | |
JP2010530018A5 (ru) | ||
FI3784714T3 (fi) | Kardanolipohjainen kovete epoksihartsikoostumuksille | |
JP2008056857A5 (ru) | ||
DE602008001878D1 (de) | Wärmehärtbare zusammensetzung | |
ES2537066T3 (es) | Nueva composición de barniz de resina de bajo dieléctrico para laminados y preparación de la misma | |
ATE547450T1 (de) | Bei niedrigen temperaturen härtbare epoxidzusammensetzungen, die phenolisch blockierte harnstoff-härter enthalten | |
JP2018188611A5 (ru) | ||
RU2019109175A (ru) | Двухкомпонентная растворная строительная смесь и ее применение | |
KR101248052B1 (ko) | 양말단에 힌더드 아민을 갖는 화합물과 이의 제조방법 | |
KR102400694B1 (ko) | 부가물 및 이의 용도 | |
WO2016132889A1 (ja) | 硬化性樹脂組成物及びそれを用いてなる封止材 |