RU2009146439A - Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство - Google Patents

Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство Download PDF

Info

Publication number
RU2009146439A
RU2009146439A RU2009146439/05A RU2009146439A RU2009146439A RU 2009146439 A RU2009146439 A RU 2009146439A RU 2009146439/05 A RU2009146439/05 A RU 2009146439/05A RU 2009146439 A RU2009146439 A RU 2009146439A RU 2009146439 A RU2009146439 A RU 2009146439A
Authority
RU
Russia
Prior art keywords
epoxy resin
component
formula
thermosetting
acid anhydride
Prior art date
Application number
RU2009146439/05A
Other languages
English (en)
Other versions
RU2528849C2 (ru
Inventor
Масаки ХАЯСИ (JP)
Масаки ХАЯСИ
Юсуке ТАГУТИ (JP)
Юсуке ТАГУТИ
Казутоси ТОМИЕСИ (JP)
Казутоси ТОМИЕСИ
Томоеси ТАДА (JP)
Томоеси ТАДА
Original Assignee
Нитиа Корпорейшн (Jp)
Нитиа Корпорейшн
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Нитиа Корпорейшн (Jp), Нитиа Корпорейшн filed Critical Нитиа Корпорейшн (Jp)
Publication of RU2009146439A publication Critical patent/RU2009146439A/ru
Application granted granted Critical
Publication of RU2528849C2 publication Critical patent/RU2528849C2/ru

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/182Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents
    • C08G59/186Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing using pre-adducts of epoxy compounds with curing agents with acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
    • C08G59/3236Heterocylic compounds
    • C08G59/3245Heterocylic compounds containing only nitrogen as a heteroatom
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/50Amines
    • C08G59/5046Amines heterocyclic
    • C08G59/5053Amines heterocyclic containing only nitrogen as a heteroatom
    • C08G59/508Amines heterocyclic containing only nitrogen as a heteroatom having three nitrogen atoms in the ring
    • C08G59/5086Triazines; Melamines; Guanamines
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/34Silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/04Oxygen-containing compounds
    • C08K5/09Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/06Triglycidylisocyanurates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)

Abstract

1. Термоотверждающаяся композиция эпоксидной смолы, содержащая ! (А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эквивалента эпоксидной группы к эквиваленту ангидрида кислоты 0,6-2,0; ! (В) внутренний агент высвобождения из формы; ! (С) отражающий материал; ! (D) неорганический наполнитель; ! (Е) катализатор отверждения; ! где внутренний агент высвобождения из формы компонента (В) содержит в комбинации сложный карбоксилатный эфир, представленный следующей общей формулой (1): ! ! в которой R11 и R12 представляют собой независимо алкильную группу, представленную CnH2n+1, где n представляет собой число от 1 до 30, ! и соединение, представленное следующей общей формулой (2): ! ! в которой R1, R2 и R3 независимо выбраны из Н, -ОН, -OR и -OCOCaHb при условии, что, по меньшей мере, один из R1, R2 и R3 включает -OCOCaHb; R представляет собой алкильную группу, представленную CnH2n+1, в которой n представляет собой целое число от 1 до 30, а представляет собой целое число от 10 до 30, b представляет собой целое число от 17 до 61. ! 2. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой общее содержание сложного карбоксилатного эфира формулы (1) и соединения формулы (2) во всей композиции составляет 0,2-5,0 мас.%, и массовое отношение сложного карбоксилатного эфира формулы (1) к соединению формулы (2) находится в интервале от 1:5 до 10:1. ! 3. Термоотверждающаяся композиция эпоксидной смолы, содержащая ! (А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эпоксидной группы к группе ангидрида кислоты составляет 0,6-2,0, ! (F) упрочняющий материал, ! (В) внутренний агент высвобождения из формы, ! (С

Claims (10)

1. Термоотверждающаяся композиция эпоксидной смолы, содержащая
(А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эквивалента эпоксидной группы к эквиваленту ангидрида кислоты 0,6-2,0;
(В) внутренний агент высвобождения из формы;
(С) отражающий материал;
(D) неорганический наполнитель;
(Е) катализатор отверждения;
где внутренний агент высвобождения из формы компонента (В) содержит в комбинации сложный карбоксилатный эфир, представленный следующей общей формулой (1):
Figure 00000001
в которой R11 и R12 представляют собой независимо алкильную группу, представленную CnH2n+1, где n представляет собой число от 1 до 30,
и соединение, представленное следующей общей формулой (2):
Figure 00000002
в которой R1, R2 и R3 независимо выбраны из Н, -ОН, -OR и -OCOCaHb при условии, что, по меньшей мере, один из R1, R2 и R3 включает -OCOCaHb; R представляет собой алкильную группу, представленную CnH2n+1, в которой n представляет собой целое число от 1 до 30, а представляет собой целое число от 10 до 30, b представляет собой целое число от 17 до 61.
2. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой общее содержание сложного карбоксилатного эфира формулы (1) и соединения формулы (2) во всей композиции составляет 0,2-5,0 мас.%, и массовое отношение сложного карбоксилатного эфира формулы (1) к соединению формулы (2) находится в интервале от 1:5 до 10:1.
3. Термоотверждающаяся композиция эпоксидной смолы, содержащая
(А) реакционную смесь триазинпроизводной эпоксидной смолы и ангидрида кислоты при отношении эпоксидной группы к группе ангидрида кислоты составляет 0,6-2,0,
(F) упрочняющий материал,
(В) внутренний агент высвобождения из формы,
(С) отражающий материал,
(D) неорганический наполнитель и
(Е) катализатор отверждения
где компонент (F) представляет собой триклинный силикатный минерал, представленный химической формулой CaSiO3.
4. Термоотверждающаяся композиция эпоксидной смолы по п.3, в которой содержание упрочняющего материала компонента (F) составляет 1-80 мас.% всей композиции.
5. Термоотверждающаяся композиция эпоксидной смолы по п.3, в которой внутренний агент высвобождения из формы компонента (В) содержит глицеринмоностеарат, имеющий температуру плавления 50-70°C, и содержание внутреннего агента высвобождения из формы составляет 0,2-5,0 мас.% всей композиции.
6. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой отражающим материалом компонента (С) является диоксид титана, который имеет поверхность, обработанную неорганическим или органическим веществом; содержание свинца в компоненте (С) составляет до 10 ч./млн; содержание компонента (С) по отношению ко всей композиции составляет 2-80 мас.%; катализатором отверждения компонента (Е) является октилат третичного амина; содержание компонента (Е) составляет 0,05-5 мас.% по отношению ко всей композиции.
7. Термоотверждающаяся композиция эпоксидной смолы по п.1, в которой триазинпроизводной эпоксидной смолой является 1,3,5-триазинпроизводная эпоксидная смола.
8. Термоотверждающаяся композиция эпоксидной смолы по п.7, в которой реакционная смесь компонента (А) содержит соединение, представленное следующей общей формулой (3):
Figure 00000003
в которой R4 представляет собой остаток ангидрида кислоты, и m представляет собой число от 0 до 200.
9. Термоотверждающаяся композиция эпоксидной смолы по п.1, которая предназначена для использования в формовании корпуса полупроводникового элемента.
10. Полупроводниковое устройство, содержащее полупроводниковый элемент, капсулированный отвержденным продуктом термоотверждающейся композиции эпоксидной смолы по п.1.
RU2009146439/05A 2008-12-15 2009-12-14 Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство RU2528849C2 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008318429A JP5182512B2 (ja) 2008-12-15 2008-12-15 熱硬化性エポキシ樹脂組成物及び半導体装置
JP2008-318429 2008-12-15

Publications (2)

Publication Number Publication Date
RU2009146439A true RU2009146439A (ru) 2011-06-20
RU2528849C2 RU2528849C2 (ru) 2014-09-20

Family

ID=41718793

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2009146439/05A RU2528849C2 (ru) 2008-12-15 2009-12-14 Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство

Country Status (8)

Country Link
US (1) US9303115B2 (ru)
EP (1) EP2196501B1 (ru)
JP (1) JP5182512B2 (ru)
KR (1) KR101686500B1 (ru)
CN (1) CN101792572B (ru)
DE (1) DE602009001233D1 (ru)
RU (1) RU2528849C2 (ru)
TW (1) TWI485175B (ru)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6133004B2 (ja) * 2009-03-31 2017-05-24 日立化成株式会社 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
SI2414444T1 (sl) * 2009-04-02 2013-08-30 Huntsman Advanced Materials (Switzerland) Gmbh Neposredno zabrizgavanje
TWI403003B (zh) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp 發光二極體及其製造方法
JP5545246B2 (ja) * 2010-03-30 2014-07-09 信越化学工業株式会社 樹脂組成物及び発光半導体素子用リフレクター、及び発光半導体装置
US9028123B2 (en) 2010-04-16 2015-05-12 Flex Lighting Ii, Llc Display illumination device with a film-based lightguide having stacked incident surfaces
CA2796519A1 (en) 2010-04-16 2011-10-20 Flex Lighting Ii, Llc Illumination device comprising a film-based lightguide
JP2012041403A (ja) * 2010-08-16 2012-03-01 Shin-Etsu Chemical Co Ltd 熱硬化性エポキシ樹脂組成物及び半導体装置
JP2012077235A (ja) * 2010-10-05 2012-04-19 Nitto Denko Corp 光半導体装置用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
JP5557770B2 (ja) * 2011-02-16 2014-07-23 信越化学工業株式会社 熱硬化性エポキシ樹脂組成物、光半導体装置用反射部材及び光半導体装置
JP2012172012A (ja) * 2011-02-18 2012-09-10 Shin-Etsu Chemical Co Ltd 熱硬化性エポキシ樹脂組成物及び光半導体装置
US10147853B2 (en) * 2011-03-18 2018-12-04 Cree, Inc. Encapsulant with index matched thixotropic agent
KR101092015B1 (ko) * 2011-05-03 2011-12-08 주식회사 네패스신소재 열경화형 광반사용 수지 조성물, 이의 제조 방법, 이로부터 제조된 광반도체 소자 탑재용 반사판, 및 이를 포함하는 광반도체 장치
CN102931329B (zh) * 2011-08-08 2015-01-07 展晶科技(深圳)有限公司 发光二极管封装结构
JP5650097B2 (ja) * 2011-11-09 2015-01-07 信越化学工業株式会社 熱硬化性エポキシ樹脂組成物及び光半導体装置
JP2013239540A (ja) * 2012-05-14 2013-11-28 Shin Etsu Chem Co Ltd 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法
US9887327B2 (en) 2012-06-11 2018-02-06 Cree, Inc. LED package with encapsulant having curved and planar surfaces
US9818919B2 (en) 2012-06-11 2017-11-14 Cree, Inc. LED package with multiple element light source and encapsulant having planar surfaces
US10424702B2 (en) 2012-06-11 2019-09-24 Cree, Inc. Compact LED package with reflectivity layer
US10468565B2 (en) 2012-06-11 2019-11-05 Cree, Inc. LED package with multiple element light source and encapsulant having curved and/or planar surfaces
JP5924840B2 (ja) * 2013-03-19 2016-05-25 信越化学工業株式会社 熱硬化性エポキシ樹脂組成物
US9461024B2 (en) 2013-08-01 2016-10-04 Cree, Inc. Light emitter devices and methods for light emitting diode (LED) chips
USD758976S1 (en) 2013-08-08 2016-06-14 Cree, Inc. LED package
JP6233229B2 (ja) * 2014-07-22 2017-11-22 信越化学工業株式会社 光半導体素子封止用熱硬化性エポキシ樹脂組成物及びそれを用いた光半導体装置
USD790486S1 (en) 2014-09-30 2017-06-27 Cree, Inc. LED package with truncated encapsulant
JP6311626B2 (ja) 2015-02-20 2018-04-18 信越化学工業株式会社 Ledリフレクター用白色熱硬化性エポキシ樹脂組成物
JP6517043B2 (ja) * 2015-02-25 2019-05-22 ルネサスエレクトロニクス株式会社 光結合装置、光結合装置の製造方法および電力変換システム
USD777122S1 (en) 2015-02-27 2017-01-24 Cree, Inc. LED package
USD783547S1 (en) 2015-06-04 2017-04-11 Cree, Inc. LED package
JP6841551B2 (ja) * 2015-06-29 2021-03-10 株式会社クラレ Led反射板用ポリアミド組成物、led反射板、該反射板を備えた発光装置
JP2017082027A (ja) * 2015-10-22 2017-05-18 信越化学工業株式会社 フォトカプラー一次封止用熱硬化性エポキシ樹脂組成物
US10279519B2 (en) 2015-12-30 2019-05-07 The United States Of America, As Represented By The Secretary Of The Navy Mold assembly and method of molding a component
JP6191705B2 (ja) * 2016-01-04 2017-09-06 日立化成株式会社 光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP7065381B2 (ja) * 2016-07-19 2022-05-12 パナソニックIpマネジメント株式会社 光反射体、ベース体、発光装置及びベース体の製造方法
WO2018160520A1 (en) * 2017-03-01 2018-09-07 Purdue Research Foundation Epoxy tannin reaction product compositions
RU2769911C2 (ru) * 2019-08-05 2022-04-08 Акционерное общество "ЭНПЦ Эпитал" Полимерная композиция
JP6838688B1 (ja) * 2019-11-25 2021-03-03 株式会社村田製作所 Rficモジュール、rfidタグ及びそれらの製造方法
CN111040702B (zh) * 2019-12-31 2022-10-11 无锡创达新材料股份有限公司 一种led反射杯用的有机硅环氧树脂组合物及其固化物
CN111040703A (zh) * 2019-12-31 2020-04-21 无锡创达新材料股份有限公司 一种应用于led反射杯的环氧树脂组合物及其固化物

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH548431A (de) 1971-05-25 1974-04-30 Ciba Geigy Ag Lagerstabile, schnellhaertende epoxidharzpressmassen.
JP2656336B2 (ja) 1989-01-18 1997-09-24 日東電工株式会社 光半導体装置およびそれに用いる光半導体封止用エポキシ樹脂組成物
JPH0799915B2 (ja) * 1989-08-26 1995-10-25 株式会社日立製作所 回転電機の回転子及びその絶縁方法
JPH10158477A (ja) * 1996-11-28 1998-06-16 Nitto Denko Corp 半導体封止用エポキシ樹脂組成物
JP3618238B2 (ja) 1998-12-25 2005-02-09 日亜化学工業株式会社 発光ダイオード
JP3489025B2 (ja) * 2000-01-14 2004-01-19 大塚化学ホールディングス株式会社 エポキシ樹脂組成物及びそれを用いた電子部品
JP2001234032A (ja) 2000-02-24 2001-08-28 Sumitomo Bakelite Co Ltd 光半導体封止用エポキシ樹脂組成物
JP3512732B2 (ja) 2000-11-09 2004-03-31 京セラケミカル株式会社 封止用樹脂組成物および電子部品封止装置
JP3897282B2 (ja) * 2000-11-28 2007-03-22 住友ベークライト株式会社 光半導体封止用エポキシ樹脂組成物及び光半導体装置
JP3891554B2 (ja) 2001-01-30 2007-03-14 住友ベークライト株式会社 光半導体封止用エポキシ樹脂組成物及び光半導体装置
US6989412B2 (en) * 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
JP4250949B2 (ja) 2001-11-01 2009-04-08 日亜化学工業株式会社 発光装置及びその製造方法
US6924596B2 (en) * 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
JP2003302533A (ja) * 2002-04-12 2003-10-24 Hitachi Cable Ltd 光ファイバ収納トレイの支持部材及びそれを用いた成端箱
WO2005073321A1 (ja) * 2004-01-30 2005-08-11 Zeon Corporation 樹脂組成物
JP2005239912A (ja) * 2004-02-27 2005-09-08 Sumitomo Bakelite Co Ltd 光半導体封止用エポキシ樹脂組成物及び光半導体装置
JP2005306952A (ja) 2004-04-20 2005-11-04 Japan Epoxy Resin Kk 発光素子封止材用エポキシ樹脂組成物
CN101283016B (zh) * 2005-08-04 2011-05-11 信越化学工业株式会社 热固性环氧树脂组合物及半导体装置
JP5072309B2 (ja) * 2006-09-29 2012-11-14 株式会社日本触媒 樹脂組成物及びその製造方法
KR101090654B1 (ko) * 2006-10-02 2011-12-07 히다치 가세고교 가부시끼가이샤 밀봉용 에폭시 수지 성형 재료 및 전자 부품 장치
JP5470680B2 (ja) * 2007-02-06 2014-04-16 日亜化学工業株式会社 発光装置及びその製造方法並びに成形体
JP2008189833A (ja) * 2007-02-06 2008-08-21 Shin Etsu Chem Co Ltd 熱硬化性エポキシ樹脂組成物及び半導体装置
JP2008189827A (ja) 2007-02-06 2008-08-21 Shin Etsu Chem Co Ltd 熱硬化性エポキシ樹脂組成物及び半導体装置
US20080255283A1 (en) * 2007-02-06 2008-10-16 Takayuki Aoki Thermosetting epoxy resin composition and semiconductor device

Also Published As

Publication number Publication date
US20100148380A1 (en) 2010-06-17
KR20100069584A (ko) 2010-06-24
DE602009001233D1 (de) 2011-06-16
KR101686500B1 (ko) 2016-12-14
EP2196501A1 (en) 2010-06-16
CN101792572A (zh) 2010-08-04
US9303115B2 (en) 2016-04-05
TWI485175B (zh) 2015-05-21
TW201038611A (en) 2010-11-01
EP2196501B1 (en) 2011-05-04
RU2528849C2 (ru) 2014-09-20
CN101792572B (zh) 2014-07-02
JP2010138347A (ja) 2010-06-24
JP5182512B2 (ja) 2013-04-17

Similar Documents

Publication Publication Date Title
RU2009146439A (ru) Термоотверждающаяся композиция эпоксидной смолы и полупроводниковое устройство
ES2881284T3 (es) Sistemas de fijación con sustancias de relleno de partículas finas
ES2621154T3 (es) Composiciones de benzoxazina con cauchos de núcleo-envoltura
DE602005010749D1 (de) Härtbare zusammensetzung
RU2015106941A (ru) Полимер, содержащий тиоловые группы, и включающая его отверждаемая композиция
TWI455990B (zh) 環氧樹脂組成物及半導體裝置
ATE552310T1 (de) Unterfüllungszusammensetzung und optisches halbleiterbauelement
DE602006003085D1 (de) Härtbare silikonzusammensetzung und elektronische komponenten
RU2013142992A (ru) Характеризующиеся высокой латентностью отвердители для эпоксидных смол
TW200801110A (en) Resin composition for semiconductor encapsulation and semiconductor device
ATE540022T1 (de) Blends enthaltend epoxidharze und mischungen von aminen mit guanidin-derivaten
MY165894A (en) Epoxy resin molding material for encapsulation and electronic component device including element encapsulated with same
RU2006107927A (ru) Нанонаполненные композиционные материалы с исключительно высокой температурой стеклования
JP2016156002A (ja) 硬化性樹脂組成物及びそれを用いてなる封止材
JP2010530018A5 (ru)
FI3784714T3 (fi) Kardanolipohjainen kovete epoksihartsikoostumuksille
JP2008056857A5 (ru)
DE602008001878D1 (de) Wärmehärtbare zusammensetzung
ES2537066T3 (es) Nueva composición de barniz de resina de bajo dieléctrico para laminados y preparación de la misma
ATE547450T1 (de) Bei niedrigen temperaturen härtbare epoxidzusammensetzungen, die phenolisch blockierte harnstoff-härter enthalten
JP2018188611A5 (ru)
RU2019109175A (ru) Двухкомпонентная растворная строительная смесь и ее применение
KR101248052B1 (ko) 양말단에 힌더드 아민을 갖는 화합물과 이의 제조방법
KR102400694B1 (ko) 부가물 및 이의 용도
WO2016132889A1 (ja) 硬化性樹脂組成物及びそれを用いてなる封止材