ATE552310T1 - Unterfüllungszusammensetzung und optisches halbleiterbauelement - Google Patents
Unterfüllungszusammensetzung und optisches halbleiterbauelementInfo
- Publication number
- ATE552310T1 ATE552310T1 AT10176334T AT10176334T ATE552310T1 AT E552310 T1 ATE552310 T1 AT E552310T1 AT 10176334 T AT10176334 T AT 10176334T AT 10176334 T AT10176334 T AT 10176334T AT E552310 T1 ATE552310 T1 AT E552310T1
- Authority
- AT
- Austria
- Prior art keywords
- weight
- parts
- group
- underfill composition
- carbon atoms
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 125000004432 carbon atom Chemical group C* 0.000 abstract 2
- 229920001296 polysiloxane Polymers 0.000 abstract 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 1
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 abstract 1
- 229920005645 diorganopolysiloxane polymer Polymers 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 239000011256 inorganic filler Substances 0.000 abstract 1
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 1
- 125000000962 organic group Chemical group 0.000 abstract 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/548—Silicon-containing compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Silicon Polymers (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009213778A JP4964928B2 (ja) | 2009-09-15 | 2009-09-15 | アンダーフィル材組成物及び光半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE552310T1 true ATE552310T1 (de) | 2012-04-15 |
Family
ID=42829989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT10176334T ATE552310T1 (de) | 2009-09-15 | 2010-09-13 | Unterfüllungszusammensetzung und optisches halbleiterbauelement |
Country Status (7)
Country | Link |
---|---|
US (1) | US8519063B2 (de) |
EP (1) | EP2295499B1 (de) |
JP (1) | JP4964928B2 (de) |
KR (1) | KR101701514B1 (de) |
CN (1) | CN102020852B (de) |
AT (1) | ATE552310T1 (de) |
TW (1) | TWI432522B (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8692394B2 (en) * | 2009-09-30 | 2014-04-08 | Sekisui Chemical Co., Ltd. | Adhesive for semiconductor bonding, adhesive film for semiconductor bonding, method for mounting semiconductor chip, and semiconductor device |
JP2012057000A (ja) * | 2010-09-07 | 2012-03-22 | Shin-Etsu Chemical Co Ltd | シリコーン樹脂組成物、半導体装置の封止材、及び半導体装置 |
JP2014096539A (ja) * | 2012-11-12 | 2014-05-22 | Tokuyama Corp | 紫外発光素子、および発光構造体 |
CN105745253A (zh) * | 2013-09-20 | 2016-07-06 | 琳得科株式会社 | 固化性组合物、固化物和固化性组合物的使用方法 |
JP6430388B2 (ja) * | 2013-09-20 | 2018-11-28 | リンテック株式会社 | 硬化性組成物、硬化物および硬化性組成物の使用方法 |
CN103613930B (zh) * | 2013-11-21 | 2015-11-18 | 山东宝龙达实业集团有限公司 | 耐-100℃低温的脱醇型有机硅密封件的制备方法 |
JP6329776B2 (ja) * | 2014-01-28 | 2018-05-23 | 株式会社アドマテックス | モールドアンダーフィル用封止材 |
JP6525573B2 (ja) * | 2014-12-08 | 2019-06-05 | 信越化学工業株式会社 | 縮合硬化性シリコーン樹脂組成物 |
CN105778506B (zh) | 2014-12-25 | 2019-04-30 | 广东生益科技股份有限公司 | 一种有机硅树脂组合物及使用它的预浸料、层压板、覆铜板以及铝基板 |
WO2016120953A1 (ja) * | 2015-01-26 | 2016-08-04 | セントラル硝子株式会社 | 半導体封止用硬化性樹脂組成物およびその硬化物、並びにこれらを用いた半導体装置 |
JP6403016B2 (ja) * | 2015-07-23 | 2018-10-10 | 信越化学工業株式会社 | 熱硬化性シリコーン樹脂組成物、それを用いたフォトカプラー、及びそのフォトカプラーを有する光半導体装置 |
JP6512181B2 (ja) * | 2016-06-23 | 2019-05-15 | 信越化学工業株式会社 | フォトカプラー一次封止用熱硬化性シリコーン樹脂組成物、該組成物で封止されたフォトカプラー及び該フォトカプラーを有する光半導体装置 |
JP7285343B2 (ja) * | 2019-09-04 | 2023-06-01 | サムスン エスディアイ カンパニー,リミテッド | 硬化型樹脂組成物、それから形成された硬化膜、および前記硬化膜を有する電子装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4102970A (en) * | 1974-10-03 | 1978-07-25 | Wacker-Chemie Gmbh | Thermosetting compositions which can be cured to form molded objects or coatings |
JP3419273B2 (ja) * | 1997-09-09 | 2003-06-23 | 信越化学工業株式会社 | 室温硬化性オルガノポリシロキサン組成物 |
JP3993373B2 (ja) * | 2000-09-14 | 2007-10-17 | 信越化学工業株式会社 | ポリオルガノシロキサン化合物及びそれを含有するコーティング組成物 |
JP4948716B2 (ja) * | 2001-06-29 | 2012-06-06 | 東レ・ダウコーニング株式会社 | 硬化性エポキシ樹脂組成物 |
JP3821214B2 (ja) * | 2001-07-16 | 2006-09-13 | 信越化学工業株式会社 | スクラッチ可能な隠蔽性コーティング用シリコーン組成物 |
US6733902B2 (en) * | 2001-08-16 | 2004-05-11 | Shin-Etsu Chemical Co., Ltd. | Liquid epoxy resin composition and semiconductor device |
JP3912515B2 (ja) * | 2002-07-18 | 2007-05-09 | 信越化学工業株式会社 | 液状エポキシ樹脂組成物及び半導体装置 |
JP3858991B2 (ja) * | 2002-09-24 | 2006-12-20 | 信越化学工業株式会社 | 室温硬化性オルガノポリシロキサン組成物 |
US6783692B2 (en) * | 2002-10-17 | 2004-08-31 | Dow Corning Corporation | Heat softening thermally conductive compositions and methods for their preparation |
JP2005306952A (ja) | 2004-04-20 | 2005-11-04 | Japan Epoxy Resin Kk | 発光素子封止材用エポキシ樹脂組成物 |
JP4256324B2 (ja) * | 2004-10-13 | 2009-04-22 | 信越化学工業株式会社 | 室温硬化性オルガノポリシロキサン組成物 |
FR2878855B1 (fr) * | 2004-12-07 | 2007-02-09 | Rhodia Chimie Sa | Procede de preparation de polyorganosiloxane a groupements fonctionnels en presence de silanolate de lithium |
JP2006213780A (ja) * | 2005-02-02 | 2006-08-17 | Shin Etsu Chem Co Ltd | 室温硬化性オルガノポリシロキサン組成物 |
JP2006291018A (ja) * | 2005-04-08 | 2006-10-26 | Shin Etsu Chem Co Ltd | Led素子封止用硬化性樹脂組成物 |
JP4534980B2 (ja) | 2005-12-21 | 2010-09-01 | パナソニック電工株式会社 | アンダーフィル用液状エポキシ樹脂組成物及び半導体装置 |
JP4858431B2 (ja) | 2007-12-25 | 2012-01-18 | パナソニック電工株式会社 | 半導体装置の製造方法 |
JP2009173744A (ja) | 2008-01-23 | 2009-08-06 | Shin Etsu Chem Co Ltd | アンダーフィル剤組成物 |
JP2010031149A (ja) * | 2008-07-29 | 2010-02-12 | Shin-Etsu Chemical Co Ltd | 光半導体素子封止用樹脂組成物 |
JP2010106243A (ja) | 2008-09-30 | 2010-05-13 | Shin-Etsu Chemical Co Ltd | 光半導体装置用シリコーン樹脂組成物 |
JP5108825B2 (ja) * | 2009-04-24 | 2012-12-26 | 信越化学工業株式会社 | 光半導体装置用シリコーン樹脂組成物及び光半導体装置 |
-
2009
- 2009-09-15 JP JP2009213778A patent/JP4964928B2/ja active Active
-
2010
- 2010-09-03 US US12/875,606 patent/US8519063B2/en active Active
- 2010-09-07 TW TW099130223A patent/TWI432522B/zh active
- 2010-09-10 KR KR1020100088780A patent/KR101701514B1/ko active IP Right Grant
- 2010-09-13 AT AT10176334T patent/ATE552310T1/de active
- 2010-09-13 EP EP10176334A patent/EP2295499B1/de active Active
- 2010-09-14 CN CN2010102837188A patent/CN102020852B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP2295499A1 (de) | 2011-03-16 |
JP4964928B2 (ja) | 2012-07-04 |
EP2295499B1 (de) | 2012-04-04 |
TW201114840A (en) | 2011-05-01 |
TWI432522B (zh) | 2014-04-01 |
JP2011063663A (ja) | 2011-03-31 |
US20110065872A1 (en) | 2011-03-17 |
US8519063B2 (en) | 2013-08-27 |
KR20110030338A (ko) | 2011-03-23 |
KR101701514B1 (ko) | 2017-02-01 |
CN102020852A (zh) | 2011-04-20 |
CN102020852B (zh) | 2013-03-27 |
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