RU2008106464A - Огнеупорная разливочная труба с пористой вставкой - Google Patents

Огнеупорная разливочная труба с пористой вставкой Download PDF

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RU2008106464A
RU2008106464A RU2008106464/02A RU2008106464A RU2008106464A RU 2008106464 A RU2008106464 A RU 2008106464A RU 2008106464/02 A RU2008106464/02 A RU 2008106464/02A RU 2008106464 A RU2008106464 A RU 2008106464A RU 2008106464 A RU2008106464 A RU 2008106464A
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gas
pipe
channel
contact surface
flat contact
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RU2008106464/02A
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RU2384389C2 (ru
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Стивен ЛИ (GB)
Стивен Ли
Айан ПРОУДФУТ (GB)
Айан ПРОУДФУТ
Дейвид БЛУМФИЛД (GB)
Дейвид БЛУМФИЛД
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Рифрэктори Интеллектуал Проперти Гмбх Унд Ко. Кг (At)
Рифрэктори Интеллектуал Проперти Гмбх Унд Ко. Кг
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Priority claimed from KR1020050038621A external-priority patent/KR100689830B1/ko
Application filed by Рифрэктори Интеллектуал Проперти Гмбх Унд Ко. Кг (At), Рифрэктори Интеллектуал Проперти Гмбх Унд Ко. Кг filed Critical Рифрэктори Интеллектуал Проперти Гмбх Унд Ко. Кг (At)
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8221—Three dimensional integrated circuits stacked in different levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/18—Peripheral circuit regions

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Rigid Pipes And Flexible Pipes (AREA)
  • Thin Film Transistor (AREA)
  • Continuous Casting (AREA)

Abstract

1. Огнеупорная разливочная труба, включающая в себя первый конец (16) с первой плоской контактной поверхностью (18), перпендикулярной продольной оси (А) трубы, и разливочный канал (14), простирающийся от первой плоской контактной поверхности (18) до второго конца трубы, причем разливочный канал (14) заканчивается по меньшей мере одним выходным отверстием во втором конце трубы, при этом первый конец (16) трубы снабжен по меньшей мере одним газопроницаемым элементом (20), расположенным таким образом, что одна из его поверхностей (20s) образует часть первой плоской контактной поверхности (18), а в него самого может подаваться газ. ! 2. Разливочная труба по п.1, в которой газопроницаемый элемент (20) имеет кольцеобразную форму. ! 3. Разливочная труба по п.1, в которой газопроницаемый элемент (20) является самостоятельной деталью, размещенной внутри первого конца (16) трубы. ! 4. Разливочная труба по п.1, в которой газопроницаемый элемент (20) формуется в процессе изготовления трубы. ! 5. Разливочная труба по п.1, в которой первый конец (16) дополнительно снабжен по меньшей мере одним газовым каналом (36), простирающимся от по меньшей мере одной поверхности газопроницаемого элемента (20), иной, чем образующая часть первой плоской контактной поверхности (18) поверхность (20s), до по меньшей мере одной удаленной внешней поверхности первого конца (16)трубы. ! 6. Разливочная труба по п.5, в которой газовый канал (36) простирается до первой плоской контактной поверхности (18). ! 7. Разливочная труба по п.5, в которой газовый канал (36) простирается до кольцевой области трубы. ! 8. Разливочная труба по п.5, в которой газораспределительная камера (34) расположена между газопроницаем

Claims (12)

1. Огнеупорная разливочная труба, включающая в себя первый конец (16) с первой плоской контактной поверхностью (18), перпендикулярной продольной оси (А) трубы, и разливочный канал (14), простирающийся от первой плоской контактной поверхности (18) до второго конца трубы, причем разливочный канал (14) заканчивается по меньшей мере одним выходным отверстием во втором конце трубы, при этом первый конец (16) трубы снабжен по меньшей мере одним газопроницаемым элементом (20), расположенным таким образом, что одна из его поверхностей (20s) образует часть первой плоской контактной поверхности (18), а в него самого может подаваться газ.
2. Разливочная труба по п.1, в которой газопроницаемый элемент (20) имеет кольцеобразную форму.
3. Разливочная труба по п.1, в которой газопроницаемый элемент (20) является самостоятельной деталью, размещенной внутри первого конца (16) трубы.
4. Разливочная труба по п.1, в которой газопроницаемый элемент (20) формуется в процессе изготовления трубы.
5. Разливочная труба по п.1, в которой первый конец (16) дополнительно снабжен по меньшей мере одним газовым каналом (36), простирающимся от по меньшей мере одной поверхности газопроницаемого элемента (20), иной, чем образующая часть первой плоской контактной поверхности (18) поверхность (20s), до по меньшей мере одной удаленной внешней поверхности первого конца (16)трубы.
6. Разливочная труба по п.5, в которой газовый канал (36) простирается до первой плоской контактной поверхности (18).
7. Разливочная труба по п.5, в которой газовый канал (36) простирается до кольцевой области трубы.
8. Разливочная труба по п.5, в которой газораспределительная камера (34) расположена между газопроницаемым элементом (20) и газовым каналом (36).
9. Разливочная труба по п.1, в которой газопроницаемый элемент (20) расположена вдоль внешней поверхности по периметру (12р) первой плоской контактной поверхности (18).
10. Узел, состоящий из разливочной трубы по одному из пп.1-9 и второго огнеупорного компонента (10), имеющего вторую плоскую контактную поверхность (28) и второй разливочный канал (14), предназначенный для стыковки первой плоской контактной поверхности (18) первой трубы с вышеуказанной второй плоской контактной поверхностью (28), образуя тем самым непрерывно функционирующий разливочный канал (14) в переходной области между первым и вторым разливочными каналами (14), в котором второй огнеупорный компонент (10) включает в себя по меньшей мере один канал подачи газа (38), выходной конец которого выходит на вторую плоскую контактную поверхность (28), тогда как его входной конец (40) выполнен с возможностью присоединения к средствам подачи газа.
11. Узел разливочной трубы по п.10, в котором канал подачи газа (38) имеет выходной конец с увеличенной площадью поперечного сечения.
12. Узел разливочной трубы по п.10, в котором в собранном положении узла канал подачи газа (38) выходит в по меньшей мере один газовый канал (36) трубы.
RU2008106464/02A 2004-08-04 2006-07-08 Огнеупорная разливочная труба с пористой вставкой RU2384389C2 (ru)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020040061527A KR100653699B1 (ko) 2004-08-04 2004-08-04 반도체 메모리 장치 및 이 장치의 배치방법
KR1020050038621A KR100689830B1 (ko) 2005-05-09 2005-05-09 반도체 집적 회로들 및 그 제조방법들
EP05016656A EP1624487A3 (en) 2004-08-04 2005-08-01 Semiconductor device having vertically stacked field effect transistors and methods of manufacturing the same
EP05016656.8 2005-08-27
EP05018656.8 2005-08-27

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US7315466B2 (en) 2008-01-01
US20080089163A1 (en) 2008-04-17
EP1624487A3 (en) 2007-10-03
US7982221B2 (en) 2011-07-19
US7589992B2 (en) 2009-09-15
US20110266623A1 (en) 2011-11-03
US20090294863A1 (en) 2009-12-03
JP2006049914A (ja) 2006-02-16
US20060028861A1 (en) 2006-02-09
EP1624487A2 (en) 2006-02-08

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