RU2004139016A - Способ сохранения сверхчистых контактных площадок на пластине полупроводникового материала - Google Patents

Способ сохранения сверхчистых контактных площадок на пластине полупроводникового материала Download PDF

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RU2004139016A
RU2004139016A RU2004139016/28A RU2004139016A RU2004139016A RU 2004139016 A RU2004139016 A RU 2004139016A RU 2004139016/28 A RU2004139016/28 A RU 2004139016/28A RU 2004139016 A RU2004139016 A RU 2004139016A RU 2004139016 A RU2004139016 A RU 2004139016A
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plate
water
soluble film
film
wafer
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RU2004139016/28A
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Роберт Кэррол РАНИОН (US)
Роберт Кэррол РАНИОН
Чэ Кион ХОР (MY)
Чэ Кион ХОР
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Кетека Сингапур (Пте) Лтд (SG)
Кетека Сингапур (Пте) Лтд
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Publication of RU2004139016A publication Critical patent/RU2004139016A/ru

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
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    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/976—Temporary protective layer

Claims (11)

1. Способ для защиты контактных площадок пластины от силиконовой пыли и загрязнений при разделении на отдельные кристаллы, в соответствии с которым берут чистую пластину, подлежащую распиливанию, установленную на ленте для разрезания, наносят нейтральную отверждаемую водорастворимую пленку на поверхность пластины, распиливают пластину через водорастворимую пленку с частичным надпилом ленты для разрезания, охлаждают пластину чистой холодной водой во время разрезания без удаления водорастворимой пленки, промывают пластину в промывочном устройстве чистой теплой деионизорованной водой под высоким давлением для удаления нейтральной отверждаемой водорастворимой пленки с поверхности отдельных отрезанных кристаллов и из разрезов в пластине, и сушат пластину перед снятием отдельных кристаллов с пластины, установленной на ленте для разрезания.
2. Способ по п.1, характеризующийся тем, что чистая холодная вода является недеионизированной водой, которая обычно взаимодействует с открытыми контактными площадками указанного кристалла, если он не защищен нейтральной отверждаемой водорастворимой пленкой.
3. Способ по п.1, характеризующийся тем, что нанесение нейтральной отверждаемой водорастворимой пленки включает нанесение вязкой жидкости равномерно на верхнюю поверхность пластины, отверждение и сушку указанной пленки.
4. Способ по п.3, характеризующийся тем, что затвердевание и сушка пленки включает воздействие на пленку ультрафиолетового или инфракрасного излучения.
5. Способ по п.1, характеризующийся тем, что нанесение пленки на поверхность пластины включает нанесение вязкого геля, пасты или жидкости.
6. Способ защиты контактных площадок пластины от силиконовой пыли и загрязнений во время отделения от пластины путем распиливания, в соответствии с которым устанавливают чистую пластину, подлежащую распиливанию на кристаллы, на первую ленту для разрезания, наносят нейтральную отверждаемую водорастворимую пленку на верхнюю поверхность пластины, отверждают водорастворимую пленку для предотвращения ее растворения в холодной воде, осуществляют частичный распил пластины через водорастворимую пленку, промывают пластину в промывочном устройстве для удаления пыли и водорастворимой пленки, сушат промытую и распиленную пластину, наносят вторую нейтральную отверждаемую водорастворимую пленку на верхнюю поверхность пластины и в пропилы пластины, осуществляют отверждение и сушку второй нейтральной отверждаемой водорастворимой пленки, накладывают шлифовальную ленту поверх второй пленки, удаляют ленту для разделения с нижней части частично распиленной пластины, удаляют часть нижней поверхности пластины для разделения пластины на отдельные кристаллы, имеющие чрезвычайно чистые кромки, промывают распиленную пластину в промывочном устройстве для удаления пыли, сушат промытую и распиленную пластину, устанавливают промытую и распиленную сухую пластину на второй ленте для разрезания, и удаляют шлифовальную ленту и нейтральную отверждаемую водорастворимую пленку или пленки с пластины для получения отдельных кристаллов с кромками без заусенец и сколов.
7 Способ по п.6, характеризующийся тем, что удаление части нижней поверхности указанной пластины включает травление или шлифовку нижней поверхности.
8. Способ по п.6, характеризующийся тем, что промывку распиленной пластины после удаления части ее нижней поверхности осуществляют чистой холодной водой для предотвращения удаления водорастворимой пленки или пленок.
9. Способ по п.6, характеризующийся тем, что удаление нейтральной отверждаемой водорастворимой пленки или пленок с пластины включает промывку пластины в промывочном устройстве с использованием деионизированной воды под высоким давлением для удаления всех растворимых пленок и загрязнений.
10. Способ по п.6, характеризующийся тем, что частичный распил пластины через водорастворимую пленку осуществляют при подаче чистой нейтральной охлаждающей воды к диску пилы и к разрезаемой пластине.
11. Способ по п.10, характеризующийся тем, что чистая нейтральная охлаждающая вода представляет собой очищенную отфильтрованную водопроводную воду.
RU2004139016/28A 2002-07-12 2003-07-09 Способ сохранения сверхчистых контактных площадок на пластине полупроводникового материала RU2004139016A (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/193842 2002-07-12
US10/193,842 US6582983B1 (en) 2002-07-12 2002-07-12 Method and wafer for maintaining ultra clean bonding pads on a wafer

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RU2004139016A true RU2004139016A (ru) 2005-07-27

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US (1) US6582983B1 (ru)
EP (1) EP1522099A4 (ru)
JP (1) JP2005533376A (ru)
CN (1) CN1296988C (ru)
AU (1) AU2003253566A1 (ru)
MY (1) MY138777A (ru)
RU (1) RU2004139016A (ru)
WO (1) WO2004008528A1 (ru)

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