NO20084722L - Oket polysilisium utfelling i en CVD reaktor - Google Patents

Oket polysilisium utfelling i en CVD reaktor

Info

Publication number
NO20084722L
NO20084722L NO20084722A NO20084722A NO20084722L NO 20084722 L NO20084722 L NO 20084722L NO 20084722 A NO20084722 A NO 20084722A NO 20084722 A NO20084722 A NO 20084722A NO 20084722 L NO20084722 L NO 20084722L
Authority
NO
Norway
Prior art keywords
filaments
silicon
film
edge
new
Prior art date
Application number
NO20084722A
Other languages
English (en)
Norwegian (no)
Inventor
Yuepeng Wan
Santhana Raghavan Parthasarathy
Carl Chartier
Adrian Servini
Chandra P Khattak
Original Assignee
Gt Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gt Solar Inc filed Critical Gt Solar Inc
Publication of NO20084722L publication Critical patent/NO20084722L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
NO20084722A 2006-04-28 2008-11-10 Oket polysilisium utfelling i en CVD reaktor NO20084722L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/413,425 US9683286B2 (en) 2006-04-28 2006-04-28 Increased polysilicon deposition in a CVD reactor
PCT/US2007/066923 WO2007127657A2 (en) 2006-04-28 2007-04-19 Increased polysilicon deposition in a cvd reactor

Publications (1)

Publication Number Publication Date
NO20084722L true NO20084722L (no) 2008-11-10

Family

ID=38647131

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084722A NO20084722L (no) 2006-04-28 2008-11-10 Oket polysilisium utfelling i en CVD reaktor

Country Status (9)

Country Link
US (3) US9683286B2 (ko)
EP (2) EP2530184A3 (ko)
JP (2) JP2009535505A (ko)
KR (2) KR101453575B1 (ko)
CN (1) CN101432460B (ko)
CA (1) CA2650722A1 (ko)
NO (1) NO20084722L (ko)
RU (1) RU2442844C2 (ko)
WO (1) WO2007127657A2 (ko)

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WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
CN102047751B (zh) * 2008-04-14 2014-01-29 赫姆洛克半导体公司 用于沉积材料的制造设备和其中使用的电极
CA2721194A1 (en) * 2008-04-14 2009-10-22 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
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WO2010008477A2 (en) * 2008-06-23 2010-01-21 Gt Solar Incorporated Chuck and bridge connection points for tube filaments in a chemical vapor deposition reactor
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
WO2011045320A1 (de) * 2009-10-14 2011-04-21 Inocon Technologie Ges.M.B.H Heizvorrichtung für polysilizium-reaktoren
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CN103160916A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种异形硅芯的拉制模板
CN103158202B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
CN103160917A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的拉制模板
CN103160926A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种采用空心硅芯生长多晶硅的方法
CN103158201B (zh) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
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US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
CN103882519A (zh) * 2014-04-04 2014-06-25 天津环煜电子材料科技有限公司 一种硅管及硅管太阳电池级多晶硅棒制备方法
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Also Published As

Publication number Publication date
US9683286B2 (en) 2017-06-20
US20070251455A1 (en) 2007-11-01
CA2650722A1 (en) 2007-11-08
EP2013376A4 (en) 2010-03-24
EP2530184A2 (en) 2012-12-05
US20170253960A1 (en) 2017-09-07
JP2009535505A (ja) 2009-10-01
CN101432460A (zh) 2009-05-13
KR20140099952A (ko) 2014-08-13
RU2008142471A (ru) 2010-06-10
KR101453575B1 (ko) 2014-10-21
KR20090005375A (ko) 2009-01-13
WO2007127657A2 (en) 2007-11-08
EP2013376B1 (en) 2018-05-30
EP2013376A2 (en) 2009-01-14
RU2442844C2 (ru) 2012-02-20
EP2013376B8 (en) 2018-10-31
US8647432B2 (en) 2014-02-11
JP5974030B2 (ja) 2016-08-23
EP2530184A3 (en) 2013-08-07
US20110271718A1 (en) 2011-11-10
CN101432460B (zh) 2013-07-31
JP2014141748A (ja) 2014-08-07
WO2007127657A3 (en) 2008-11-20

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