NO20084722L - Oket polysilisium utfelling i en CVD reaktor - Google Patents

Oket polysilisium utfelling i en CVD reaktor

Info

Publication number
NO20084722L
NO20084722L NO20084722A NO20084722A NO20084722L NO 20084722 L NO20084722 L NO 20084722L NO 20084722 A NO20084722 A NO 20084722A NO 20084722 A NO20084722 A NO 20084722A NO 20084722 L NO20084722 L NO 20084722L
Authority
NO
Norway
Prior art keywords
filaments
silicon
film
edge
new
Prior art date
Application number
NO20084722A
Other languages
English (en)
Inventor
Yuepeng Wan
Santhana Raghavan Parthasarathy
Carl Chartier
Adrian Servini
Chandra P Khattak
Original Assignee
Gt Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gt Solar Inc filed Critical Gt Solar Inc
Publication of NO20084722L publication Critical patent/NO20084722L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Det er beskrevet en fremgangsmåte og prosess forfremstilling av bulk polysilisium ved kjemisk dampavsetning (CVD), hvor konvensjonelle silisium "slanke stenger" som vanligvis blir brukt i en Siemens-type reaksjon blir erstattet med formede silisiumfilamenter (31, 32, 33) med tilsvarende elektriske egenskaper, men med større overflateareale, så som silisiumrør, bånd og andre tverrsnittsformer. Silisiumholdige gasser, så som klorsilan eller silan, blir dekomponert og danner en silisiumavsetning på de varme overflatene til filamentene. De innledningsvis store overflatearealene til disse filamentene sikrer en høyere produksjonsrate uten å endre reaktorstørrelsen og uten å øke antallet eller lengden til filamentene. Eksisterende reaktorer trenger kun en tilpasning eller utbytting av filamentstøtter (19) for å kunne bruke de nye filamentene. Filamentene vokser fra silisiumsmelten ved kant-definert, filmmatevekst (EFG -Edge-defined, Film-fed Growth) metoden. Dette muliggjør også doping av filamentene og en forenkling av strømtilførselen for nye reaktorer.
NO20084722A 2006-04-28 2008-11-10 Oket polysilisium utfelling i en CVD reaktor NO20084722L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/413,425 US9683286B2 (en) 2006-04-28 2006-04-28 Increased polysilicon deposition in a CVD reactor
PCT/US2007/066923 WO2007127657A2 (en) 2006-04-28 2007-04-19 Increased polysilicon deposition in a cvd reactor

Publications (1)

Publication Number Publication Date
NO20084722L true NO20084722L (no) 2008-11-10

Family

ID=38647131

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084722A NO20084722L (no) 2006-04-28 2008-11-10 Oket polysilisium utfelling i en CVD reaktor

Country Status (9)

Country Link
US (3) US9683286B2 (no)
EP (2) EP2013376B8 (no)
JP (2) JP2009535505A (no)
KR (2) KR20140099952A (no)
CN (1) CN101432460B (no)
CA (1) CA2650722A1 (no)
NO (1) NO20084722L (no)
RU (1) RU2442844C2 (no)
WO (1) WO2007127657A2 (no)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080206970A1 (en) * 2005-04-10 2008-08-28 Franz Hugo Production Of Polycrystalline Silicon
US20090191336A1 (en) * 2008-01-30 2009-07-30 Mohan Chandra Method and apparatus for simpified startup of chemical vapor deposition of polysilicon
RU2010143546A (ru) * 2008-03-26 2012-05-10 ДжиТи СОЛАР, ИНКОРПОРЕЙТЕД (US) Реакторная система с золотым покрытием для осаждения поликристаллического кремния и способ
CN102027156A (zh) * 2008-03-26 2011-04-20 Gt太阳能公司 在化学气相沉积反应器中用于配气的系统和方法
EP2266369B1 (en) * 2008-04-14 2017-11-22 Hemlock Semiconductor Operations LLC Manufacturing apparatus for depositing a material and an electrode for use therein
AU2009236678B2 (en) * 2008-04-14 2014-02-27 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material on an electrode for use therein
EP2265883A1 (en) * 2008-04-14 2010-12-29 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and an electrode for use therein
TWI458854B (zh) * 2008-06-23 2014-11-01 Gtat Corp 在化學氣相沉積反應器中用於管絲的夾頭及電橋之連接點
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
WO2011045320A1 (de) * 2009-10-14 2011-04-21 Inocon Technologie Ges.M.B.H Heizvorrichtung für polysilizium-reaktoren
CN101724895B (zh) * 2009-12-17 2011-12-21 江苏中能硅业科技发展有限公司 一种多晶硅的生产工艺
US20110229638A1 (en) * 2010-03-19 2011-09-22 Gt Solar Incorporated System and method for polycrystalline silicon deposition
US20110318909A1 (en) 2010-06-29 2011-12-29 Gt Solar Incorporated System and method of semiconductor manufacturing with energy recovery
US9206508B1 (en) * 2010-10-16 2015-12-08 Alleppey V. Hariharan Laser assisted chemical vapor deposition of silicon
CN103158200B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种c形硅芯的搭接方法
CN103160917A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种空心硅芯的拉制模板
CN103158201B (zh) * 2011-12-09 2016-03-02 洛阳金诺机械工程有限公司 一种空心硅芯与实心硅芯的搭接方法
CN103160916A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种异形硅芯的拉制模板
CN103158202B (zh) * 2011-12-09 2016-07-06 洛阳金诺机械工程有限公司 一种空心硅芯的搭接方法
CN103160926A (zh) * 2011-12-09 2013-06-19 洛阳金诺机械工程有限公司 一种采用空心硅芯生长多晶硅的方法
KR101469728B1 (ko) * 2013-04-12 2014-12-05 주식회사 일진피에스 다상 교류 전원을 이용한 cvd 장치
WO2014208957A1 (en) * 2013-06-25 2014-12-31 Hanwha Chemical Corporation Chemical vapor deposition reactor and method for preparing polysilicon
KR101654148B1 (ko) * 2013-09-27 2016-09-05 한화케미칼 주식회사 폴리실리콘 제조용 화학 기상 증착 반응기
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
CN103882519A (zh) * 2014-04-04 2014-06-25 天津环煜电子材料科技有限公司 一种硅管及硅管太阳电池级多晶硅棒制备方法
WO2016106337A1 (en) * 2014-12-23 2016-06-30 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
US10208381B2 (en) 2014-12-23 2019-02-19 Rec Silicon Inc Apparatus and method for managing a temperature profile using reflective energy in a thermal decomposition reactor
WO2016142729A1 (en) * 2015-03-11 2016-09-15 Essilor International (Compagnie Generale D'optique) Thermal evaporator
US10100439B2 (en) 2015-05-08 2018-10-16 Sunpower Corporation High throughput chemical vapor deposition electrode
CN106283180A (zh) * 2015-05-21 2017-01-04 丁欣 多晶硅的制造方法以及单晶硅的制造方法
EP3377671A4 (en) * 2015-11-16 2019-07-03 GTAT Corporation METHOD AND APPARATUS FOR CHEMICAL VAPOR DEPOSITION
FR3044024B1 (fr) * 2015-11-19 2017-12-22 Herakles Dispositif pour le revetement d'un ou plusieurs fils par un procede de depot en phase vapeur
CN105417542B (zh) * 2016-01-06 2018-02-02 洛阳金诺机械工程有限公司 一种空心硅芯及其硅芯组件
CN109319787B (zh) * 2018-11-02 2021-12-21 中国南玻集团股份有限公司 一种高效生产多晶硅的还原装置及工艺
CN112226741A (zh) * 2020-09-25 2021-01-15 山东国晶新材料有限公司 一种氮化硼板材的高产量生产装置及方法
WO2022123077A1 (en) * 2020-12-11 2022-06-16 Zadient Technologies SAS Method and device for producing a sic solid material
EP4279452A1 (en) * 2022-05-18 2023-11-22 Zadient Technologies SAS Sic growth substrate, cvd reactor and method for the production of sic
EP4306688A1 (en) * 2022-07-13 2024-01-17 Zadient Technologies SAS Method and device for producing a sic solid material

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB717408A (en) 1950-07-06 1954-10-27 Siemens Ag Improvements in or relating to a silicon-containing condensation product
US3030189A (en) * 1958-05-19 1962-04-17 Siemens Ag Methods of producing substances of highest purity, particularly electric semiconductors
US3006737A (en) * 1959-06-02 1961-10-31 Guy H Moates Apparatus for continuous preparation of ultrapure silicon
DE1123300B (de) * 1960-06-03 1962-02-08 Siemens Ag Verfahren zur Herstellung von Silicium oder Germanium
US3293950A (en) * 1965-01-15 1966-12-27 Dow Corning Wire drawing die
NL6915771A (no) * 1968-10-30 1970-05-04
US3853974A (en) * 1970-04-06 1974-12-10 Siemens Ag Method of producing a hollow body of semiconductor material
JPS496463B1 (no) 1970-05-21 1974-02-14
CA935336A (en) * 1970-05-29 1973-10-16 V. Melnikov Valery Method of depositing inorganic coatings from vapour phase
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
US3915662A (en) * 1971-05-19 1975-10-28 Tyco Laboratories Inc Method of growing mono crystalline tubular bodies from the melt
US3820935A (en) 1971-10-04 1974-06-28 Siemens Ag Method and device for the production of tubular members of silicon
DE2321186B2 (de) 1973-04-26 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen eines Silicium- oder Siliciumcarbid-Rohres
DE2322952C3 (de) 1973-05-07 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von Horden für die Aufnahme von Kristallscheiben bei Diffusions- und Temperprozessen
DE2328303C3 (de) * 1973-06-04 1979-11-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Siliciumstäben
DE2447691C2 (de) 1974-10-07 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von reinem Silicium
JPS51103875A (ja) 1975-03-12 1976-09-14 Hitachi Ltd Handotaiketsushonoseizohoho oyobi seizosochi
DE2541215C3 (de) 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
US4230674A (en) * 1976-12-27 1980-10-28 Mobil Tyco Solar Energy Corporation Crucible-die assemblies for growing crystalline bodies of selected shapes
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4292264A (en) * 1978-07-18 1981-09-29 Motorola, Inc. Method for producing polycrystalline ribbon
US4681652A (en) * 1980-06-05 1987-07-21 Rogers Leo C Manufacture of polycrystalline silicon
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4481232A (en) * 1983-05-27 1984-11-06 The United States Of America As Represented By The Department Of Energy Method and apparatus for producing high purity silicon
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
US4653427A (en) 1984-05-16 1987-03-31 Canon Kabushiki Kaisha Non-contact development method and apparatus under tangential magnetic field and AC field
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
IT1246735B (it) * 1990-06-27 1994-11-26 Union Carbide Coatings Service Mandrino di grafie per un filamento iniziatore nella fabbricazione di silicio policristallino e metodo di protezione.
US5389152A (en) * 1992-10-09 1995-02-14 Avco Corporation Apparatus for densification of porous billets
JP2922078B2 (ja) * 1993-03-17 1999-07-19 株式会社トクヤマ シリコンロッドの製造方法
US5552039A (en) * 1994-07-13 1996-09-03 Rpc Waste Management Services, Inc. Turbulent flow cold-wall reactor
DE4424929C2 (de) * 1994-07-14 1997-02-13 Wacker Chemie Gmbh Halterung für Trägerkörper in einer Vorrichtung zur Abscheidung von Halbleitermaterial
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
KR100237024B1 (ko) * 1995-11-22 2000-02-01 김영환 반도체 소자의 접합 영역 형성 방법
DE19882883B4 (de) * 1997-12-15 2009-02-26 Advanced Silicon Materials LLC, (n.d.Ges.d.Staates Delaware), Moses Lake System für die chemische Abscheidung aus der Gasphase zum Herstellen polykristalliner Siliziumstangen
US6544333B2 (en) * 1997-12-15 2003-04-08 Advanced Silicon Materials Llc Chemical vapor deposition system for polycrystalline silicon rod production
US6365225B1 (en) * 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
DE1257684T1 (de) 2000-02-18 2003-06-26 Gt Equipment Technologies Inc Cvd-verfahren und -vorrichtung zum abscheiden von polysilizium
DE10019601B4 (de) * 2000-04-20 2006-09-14 Wacker Chemie Ag Verfahren zur Herstellung eines polykristallinen Siliciumstabes
DE60142808D1 (de) * 2000-05-11 2010-09-23 Tokuyama Corp Vorrichtung zur Herstellung polykristallines Silizium
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US6581415B2 (en) * 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
JP2004149324A (ja) 2002-10-28 2004-05-27 Sumitomo Mitsubishi Silicon Corp 多結晶シリコンロッド及びその製造方法、並びにそのロッドの製造に使用されるシリコン芯材
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible
DE102004038718A1 (de) 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium
US20080206970A1 (en) 2005-04-10 2008-08-28 Franz Hugo Production Of Polycrystalline Silicon

Also Published As

Publication number Publication date
RU2442844C2 (ru) 2012-02-20
EP2013376A4 (en) 2010-03-24
CN101432460A (zh) 2009-05-13
JP2014141748A (ja) 2014-08-07
US8647432B2 (en) 2014-02-11
WO2007127657A3 (en) 2008-11-20
EP2013376B8 (en) 2018-10-31
EP2530184A3 (en) 2013-08-07
EP2530184A2 (en) 2012-12-05
CN101432460B (zh) 2013-07-31
US20170253960A1 (en) 2017-09-07
WO2007127657A2 (en) 2007-11-08
KR101453575B1 (ko) 2014-10-21
US9683286B2 (en) 2017-06-20
JP5974030B2 (ja) 2016-08-23
US20070251455A1 (en) 2007-11-01
KR20090005375A (ko) 2009-01-13
KR20140099952A (ko) 2014-08-13
CA2650722A1 (en) 2007-11-08
RU2008142471A (ru) 2010-06-10
JP2009535505A (ja) 2009-10-01
EP2013376B1 (en) 2018-05-30
US20110271718A1 (en) 2011-11-10
EP2013376A2 (en) 2009-01-14

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