NO20084616L - Fremgangsmate for a rense silikon - Google Patents

Fremgangsmate for a rense silikon

Info

Publication number
NO20084616L
NO20084616L NO20084616A NO20084616A NO20084616L NO 20084616 L NO20084616 L NO 20084616L NO 20084616 A NO20084616 A NO 20084616A NO 20084616 A NO20084616 A NO 20084616A NO 20084616 L NO20084616 L NO 20084616L
Authority
NO
Norway
Prior art keywords
silicon
procedure
purified
cleaning silicone
processes
Prior art date
Application number
NO20084616A
Other languages
English (en)
Norwegian (no)
Inventor
Scott Nichol
Original Assignee
6N Silicon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 6N Silicon Inc filed Critical 6N Silicon Inc
Publication of NO20084616L publication Critical patent/NO20084616L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NO20084616A 2006-04-04 2008-10-31 Fremgangsmate for a rense silikon NO20084616L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78870806P 2006-04-04 2006-04-04
PCT/CA2007/000574 WO2007112592A1 (fr) 2006-04-04 2007-04-04 Procédé de purification de silicium

Publications (1)

Publication Number Publication Date
NO20084616L true NO20084616L (no) 2008-12-22

Family

ID=38563061

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20084616A NO20084616L (no) 2006-04-04 2008-10-31 Fremgangsmate for a rense silikon

Country Status (13)

Country Link
US (5) US7727503B2 (fr)
EP (2) EP2024285B1 (fr)
JP (1) JP5374673B2 (fr)
KR (1) KR101061530B1 (fr)
CN (2) CN101460399B (fr)
AU (1) AU2007234343B2 (fr)
BR (1) BRPI0710313A2 (fr)
CA (1) CA2648288A1 (fr)
ES (1) ES2497990T3 (fr)
NO (1) NO20084616L (fr)
RU (1) RU2445258C2 (fr)
TW (1) TWI429794B (fr)
WO (1) WO2007112592A1 (fr)

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CA2680515A1 (fr) 2007-03-13 2008-09-18 6N Silicon Inc. Procede de purification de silicium
CA2694806A1 (fr) 2007-07-23 2009-01-29 6N Silicon Inc. Utilisation d'un lavage acide pour fournir des cristaux de silicium purifie
US7959730B2 (en) * 2007-10-03 2011-06-14 6N Silicon Inc. Method for processing silicon powder to obtain silicon crystals
JP4788925B2 (ja) * 2007-11-07 2011-10-05 信越化学工業株式会社 金属珪素の精製方法
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WO2010080777A1 (fr) * 2009-01-08 2010-07-15 Bp Corporation North America Inc. Procédé de réduction des impuretés pour du silicium et pour un matériau à base de silicium purifié
US8501139B2 (en) 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US8603242B2 (en) 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
US20100239484A1 (en) * 2009-03-19 2010-09-23 Jiawei Solar (Wuhan) Co., Ltd. Method for Refining Solar Grade (SoG) Silicon by Using Physical Metallurgy
CN101863476B (zh) * 2009-04-17 2012-05-30 南安市三晶阳光电力有限公司 一种去除硅中硼元素的方法
US8562932B2 (en) * 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
KR101151272B1 (ko) * 2009-09-09 2012-06-14 박현진 고순도 다결정 실리콘 제조장치
CN101837348B (zh) * 2010-04-28 2013-01-09 江西赛维Ldk太阳能多晶硅有限公司 一种将硅与杂质进行分离的方法
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CN104583123B (zh) * 2012-06-25 2017-07-25 希利柯尔材料股份有限公司 纯化硅的方法
WO2014004463A1 (fr) 2012-06-25 2014-01-03 Silicor Materials Inc. Procédé de purification de silicium
BR112014032599A2 (pt) * 2012-06-25 2017-06-27 Silicor Mat Inc método para purificar alumínio e uso de alumínio purificado para purificar silício.
TWI488818B (zh) * 2012-06-25 2015-06-21 Silicor Materials Inc 坩堝及使用其於矽之純化之方法
CN104583464A (zh) * 2012-06-25 2015-04-29 希利柯尔材料股份有限公司 用于纯化硅的耐火坩埚的表面的衬里以及使用该坩埚进行熔化和进一步定向凝固以纯化硅熔融体的方法
JP5863977B2 (ja) * 2012-09-04 2016-02-17 新日鐵住金株式会社 ＳｉＣ単結晶の製造装置及び製造方法
US10266951B2 (en) 2012-11-28 2019-04-23 Trustees Of Boston University Method and apparatus for producing solar grade silicon using a SOM electrolysis process
KR101544088B1 (ko) * 2013-11-12 2015-08-12 한국기술교육대학교 산학협력단 알루미늄-실리콘 합금으로부터 원심분리를 이용하여 고순도 실리콘을 제조하는 방법 및 실리콘 폼
CN103833038A (zh) * 2014-03-08 2014-06-04 中国科学院等离子体物理研究所 一种从硅合金熔体中半连续结晶提纯硅的方法
CN104195636A (zh) * 2014-09-01 2014-12-10 大连理工大学 一种冶金法快速制备硼母合金的方法
CN104556044A (zh) * 2014-12-10 2015-04-29 中国科学院等离子体物理研究所 一种对Al-Si合金通气处理快速去除硅中硼的方法
CN104556043A (zh) * 2014-12-10 2015-04-29 中国科学院等离子体物理研究所 一种对Al-Si合金通气处理快速去除硅中磷的方法
CN104556048B (zh) * 2014-12-25 2016-12-07 大连理工大学 一种在多晶硅定向凝固提纯中分离高金属杂质区的设备及分离方法
CN104817089B (zh) * 2015-04-21 2016-10-19 辽宁科技学院 一种回收单/多晶硅切割废料浆中金属硅与碳化硅的方法
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HUP1500509A1 (hu) * 2015-10-29 2017-05-29 Bay Zoltan Alkalmazott Kutatasi Koezhasznu Nonprofit Kft Mernoeki Divizio Eljárás szilícium kristályok dúsítására és elválasztására fémolvadékból szilícium tisztítására
CN105967188A (zh) * 2016-04-18 2016-09-28 杭州诺麦科科技有限公司 一种制备纯硅粉的催化剂及纯硅粉的制备工艺
TWI619855B (zh) * 2016-12-21 2018-04-01 Sun Wen Bin 分凝提純高純矽之方法
JP6919633B2 (ja) * 2018-08-29 2021-08-18 信越半導体株式会社 単結晶育成方法
CN109137069A (zh) * 2018-09-10 2019-01-04 孟静 太阳能电池用大尺寸硅锭的制备装置
CN109850904B (zh) * 2018-12-28 2022-05-17 宁夏大学 利用半固态法提高合金法提纯多晶硅收率的方法
CN110965120A (zh) * 2019-12-17 2020-04-07 昆明理工大学 一种过共晶铝硅合金中初生硅的分离方法
CN115397773A (zh) * 2020-04-02 2022-11-25 博斯凯矽剂科技株式会社 复合材料
CN112110450A (zh) * 2020-09-24 2020-12-22 重庆大学 一种冶金级硅中杂质硼去除的方法
CN112624122B (zh) * 2021-01-12 2022-06-14 昆明理工大学 一种真空微波精炼工业硅制备6n多晶硅的方法及装置
CN112853483A (zh) * 2021-04-21 2021-05-28 赛维Ldk太阳能高科技(新余)有限公司 掺镓晶体硅锅底料的回收方法、掺镓晶体硅
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AU2007234343A1 (en) 2007-10-11
CN101460399B (zh) 2012-03-14
RU2445258C2 (ru) 2012-03-20
KR20080108151A (ko) 2008-12-11
EP2024285B1 (fr) 2014-06-11
CN103030148A (zh) 2013-04-10
US20140338587A1 (en) 2014-11-20
CN101460399A (zh) 2009-06-17
US20120255485A1 (en) 2012-10-11
RU2008143439A (ru) 2010-05-10
WO2007112592A1 (fr) 2007-10-11
EP2749533A1 (fr) 2014-07-02
US20110129405A1 (en) 2011-06-02
AU2007234343B2 (en) 2011-10-06
TW200801262A (en) 2008-01-01
EP2749533B1 (fr) 2016-02-24
KR101061530B1 (ko) 2011-09-01
JP5374673B2 (ja) 2013-12-25
CN103030148B (zh) 2015-02-25
BRPI0710313A2 (pt) 2011-08-09
EP2024285A4 (fr) 2012-03-28
JP2009532316A (ja) 2009-09-10
TWI429794B (zh) 2014-03-11
ES2497990T3 (es) 2014-09-23
US7727503B2 (en) 2010-06-01
US7883680B2 (en) 2011-02-08
CA2648288A1 (fr) 2007-10-11
US20090274607A1 (en) 2009-11-05
US20100233064A1 (en) 2010-09-16
EP2024285A1 (fr) 2009-02-18

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