NO20071128L - Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing - Google Patents

Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing

Info

Publication number
NO20071128L
NO20071128L NO20071128A NO20071128A NO20071128L NO 20071128 L NO20071128 L NO 20071128L NO 20071128 A NO20071128 A NO 20071128A NO 20071128 A NO20071128 A NO 20071128A NO 20071128 L NO20071128 L NO 20071128L
Authority
NO
Norway
Prior art keywords
semiconductor substrate
uneven structure
production
etching solution
uniform
Prior art date
Application number
NO20071128A
Other languages
English (en)
Inventor
Masato Tsuchiya
Ikuo Mashimo
Yoshimichi Kimura
Original Assignee
Space Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Space Energy Corp filed Critical Space Energy Corp
Publication of NO20071128L publication Critical patent/NO20071128L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Tilveiebrakt er: en fremgangsmåte for sikker fremstilling med lave kostnader av et halvledersubstrat eksellent i fotoelektrisk transduksjonseffektivitet, hvori en fin ujevn struktur passende for en solcelle kan dannes enhetlig med ønsket størrelse på halvledersubstratets overflate; et halv for solar anvendelse hvori en enhetlig og fin pyramideformet ujevn struktur er tilveiebrakt enhetlig innen overflaten derav; og en løsning for etsing for dannelse av et halvledersubstrat med en enhetlig og ujevn struktur. Et halvledersubstrat etses ved anvendelse av en alkalisk løsning for etsing inneholdende minst én sort valgt fra gruppen bestående av karboksylsyrer med et karbontall på 1 til 12 og med minst én karboksylgruppe i ett molekyl og salter derav, for derved å danne en ujevn struktur på halvledersubstratets overflate.
NO20071128A 2004-10-28 2007-02-28 Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing NO20071128L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004314450 2004-10-28
PCT/JP2005/019688 WO2006046601A1 (ja) 2004-10-28 2005-10-26 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

Publications (1)

Publication Number Publication Date
NO20071128L true NO20071128L (no) 2007-05-24

Family

ID=36227843

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20071128A NO20071128L (no) 2004-10-28 2007-02-28 Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing

Country Status (11)

Country Link
US (2) US20080048279A1 (no)
EP (1) EP1806775A1 (no)
JP (1) JP4394693B2 (no)
KR (1) KR100873432B1 (no)
CN (1) CN101019212B (no)
AU (1) AU2005297901B2 (no)
CA (1) CA2579751C (no)
NO (1) NO20071128L (no)
RU (1) RU2340979C1 (no)
TW (1) TWI390615B (no)
WO (1) WO2006046601A1 (no)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266414A1 (en) 2006-05-02 2009-10-29 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
TW200745313A (en) * 2006-05-26 2007-12-16 Wako Pure Chem Ind Ltd Substrate etching liquid
DE102007026081A1 (de) * 2007-05-25 2008-11-27 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
KR101426941B1 (ko) 2007-05-30 2014-08-06 주성엔지니어링(주) 태양전지 및 그의 제조방법
WO2008147116A2 (en) * 2007-05-30 2008-12-04 Jusung Engineering Co., Ltd Solar cell and method of fabricating the same
WO2009002129A2 (en) * 2007-06-27 2008-12-31 Epivalley Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
KR100916375B1 (ko) * 2007-06-27 2009-09-07 주식회사 에피밸리 반도체 발광소자 및 반도체 발광소자를 제조하는 방법
DE102008014166B3 (de) * 2008-03-14 2009-11-26 Rena Gmbh Verfahren zur Herstellung einer Siliziumoberfläche mit pyramidaler Textur
US8940178B2 (en) * 2009-03-18 2015-01-27 E I Du Pont De Nemours And Company Textured silicon substrate and method
RU2449421C2 (ru) * 2009-11-06 2012-04-27 Евгений Инвиевич Гиваргизов Подложка для каскадных солнечных элементов
CN101844872B (zh) * 2010-05-07 2012-05-02 上海长悦涂料有限公司 一种植绒液的制备方法
JP2011258767A (ja) * 2010-06-09 2011-12-22 Sharp Corp 太陽電池
MD360Z (ro) * 2010-09-23 2011-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de formare a suprafeţelor microstructurate ale substraturilor de siliciu
US20120273036A1 (en) * 2011-04-29 2012-11-01 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
KR20120136881A (ko) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
EP2863260A1 (en) * 2011-08-31 2015-04-22 Asahi Kasei E-materials Corporation Nano-imprint mold
WO2013058070A1 (ja) * 2011-10-19 2013-04-25 シャープ株式会社 半導体基板のエッチング方法
WO2013069385A1 (ja) * 2011-11-08 2013-05-16 シャープ株式会社 半導体基板のエッチング方法
WO2013077075A1 (ja) * 2011-11-25 2013-05-30 シャープ株式会社 半導体基板のエッチング方法およびエッチング装置
US8940580B2 (en) * 2012-06-28 2015-01-27 International Business Machines Corporation Textured multi-junction solar cell and fabrication method
CN103560170B (zh) * 2013-10-29 2016-07-06 太极能源科技（昆山）有限公司 Se太阳能电池及其制作方法
JP7389571B2 (ja) * 2019-06-18 2023-11-30 アルバック成膜株式会社 シリコンエッチング方法及びシリコン基板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US630640A (en) * 1899-02-13 1899-08-08 Lorin W Young Combined hedge and wire fence.
JPS6442824A (en) * 1987-08-11 1989-02-15 Kyushu Electron Metal Wet etching
JPH06196734A (ja) * 1992-12-24 1994-07-15 Canon Inc 半導体太陽電池の製造方法及びその半導体太陽電池
JP2955167B2 (ja) * 1993-11-10 1999-10-04 シャープ株式会社 太陽電池の製造方法
US6867888B2 (en) * 1996-07-12 2005-03-15 Science Applications International Corporation Switchable polymer-dispersed liquid crystal optical elements
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
JP3695932B2 (ja) * 1998-02-12 2005-09-14 三洋電機株式会社 凹凸基板の製造方法
JP3948890B2 (ja) * 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
DE10241300A1 (de) 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten

Also Published As

Publication number Publication date
RU2340979C1 (ru) 2008-12-10
CN101019212A (zh) 2007-08-15
WO2006046601A1 (ja) 2006-05-04
CN101019212B (zh) 2010-12-08
JP4394693B2 (ja) 2010-01-06
KR100873432B1 (ko) 2008-12-11
CA2579751C (en) 2010-12-14
JPWO2006046601A1 (ja) 2008-05-22
US20080048279A1 (en) 2008-02-28
AU2005297901B2 (en) 2008-11-27
TWI390615B (zh) 2013-03-21
AU2005297901A1 (en) 2006-05-04
TW200620441A (en) 2006-06-16
EP1806775A1 (en) 2007-07-11
KR20070044047A (ko) 2007-04-26
US20090166780A1 (en) 2009-07-02
CA2579751A1 (en) 2006-05-04

Similar Documents

Publication Publication Date Title
NO20071128L (no) Prosess for produksjon av halvledersubstrat, halvledersubstrat for solar anvendelse og losning for etsing
MY150000A (en) Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
CN108017090B (zh) 一种高密度边界双层二硫化钼纳米片及其制备方法
KR101529012B1 (ko) 저렴한 비용으로 손상없이 그래핀을 전사하는 방법
WO2009072438A1 (ja) 多結晶シリコン基板の製造方法及び多結晶シリコン基板
CN106653889B (zh) 用于刻蚀太阳能电池硅片表面的制绒液及其应用
CN106960883A (zh) 一种全无机钙钛矿太阳能电池及其制备方法
TW200703716A (en) Nitride semiconductor element and its fabrication process
CN103409808A (zh) 多晶硅片制绒添加剂及其使用方法
CN101794844B (zh) 一种实现太阳能电池选择性发射极的方法
CN104037284A (zh) 一种生长在Si衬底上的GaN薄膜及其制备方法和应用
CN106540673A (zh) 一种三维TiO2/ZnO异质结阵列的合成方法
CN104393177B (zh) 基于钙钛矿相有机金属卤化物的太阳能电池及其制备方法
CN102923647A (zh) 间距与形貌可调控的金属纳米颗粒有序阵列的制备方法
CN106757370A (zh) 一种制备大面积有机无机杂化钙钛矿单晶纳米线阵列的方法
CN111889112A (zh) 一种MoS2/Graphene二维材料异质结可见光催化剂的制备方法
CN107188161A (zh) 石墨烯及其制备方法
CN101996775B (zh) 一种固态超级电容器的制备方法
CN106409653B (zh) 硅纳米线阵列的制备方法
CN109336852B (zh) 一种非富勒烯电子传输材料及其合成方法和用途
CN106298450A (zh) 一种纳米级图形化蓝宝石衬底及其制备方法和应用
CN109161850A (zh) 一种生长在Si衬底上的(In)GaN纳米管及其制备方法与应用
CN105244411B (zh) 一种硅基太阳能电池及其单晶硅片钝化方法
CN106057972A (zh) 晶体硅太阳能电池绒面结构的制备方法
CN101234855A (zh) 在位化学改性制备氧化锌纳米棒阵列薄膜的方法及其用途

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application