WO2009072438A1 - 多結晶シリコン基板の製造方法及び多結晶シリコン基板 - Google Patents

多結晶シリコン基板の製造方法及び多結晶シリコン基板 Download PDF

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Publication number
WO2009072438A1
WO2009072438A1 PCT/JP2008/071615 JP2008071615W WO2009072438A1 WO 2009072438 A1 WO2009072438 A1 WO 2009072438A1 JP 2008071615 W JP2008071615 W JP 2008071615W WO 2009072438 A1 WO2009072438 A1 WO 2009072438A1
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WO
WIPO (PCT)
Prior art keywords
silicon substrate
polycrystalline silicon
convex structure
concave
producing
Prior art date
Application number
PCT/JP2008/071615
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English (en)
French (fr)
Inventor
Masato Tsuchiya
Ikuo Mashimo
Yoshimichi Kimura
Takehisa Kato
Masahiko Kakizawa
Original Assignee
Mimasu Semiconductor Industry Co., Ltd.
Space Energy Corporation
Wako Pure Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimasu Semiconductor Industry Co., Ltd., Space Energy Corporation, Wako Pure Chemical Industries, Ltd. filed Critical Mimasu Semiconductor Industry Co., Ltd.
Priority to JP2009544646A priority Critical patent/JPWO2009072438A1/ja
Priority to US12/745,521 priority patent/US20100269903A1/en
Publication of WO2009072438A1 publication Critical patent/WO2009072438A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

　光電変換効率に優れ、太陽電池に好適な均一且つ微細な凹凸構造を簡便に多結晶シリコン基板の表面に形成することができる安全且つ低コストな多結晶シリコン基板の製造方法、並びに均一且つ微細なピラミッド状の凹凸構造を有し、反射率を著しく低減することができる多結晶シリコン基板を提供する。 　１分子中に少なくとも１個のカルボキシル基を有する炭素数１以上１２以下のカルボン酸及びその塩からなる群から選択される少なくとも１種を含むアルカリ性のエッチング液を用いて多結晶シリコン基板をエッチングし、該多結晶シリコン基板の表面に凹凸構造を形成するようにした。
PCT/JP2008/071615 2007-12-04 2008-11-28 多結晶シリコン基板の製造方法及び多結晶シリコン基板 WO2009072438A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009544646A JPWO2009072438A1 (ja) 2007-12-04 2008-11-28 多結晶シリコン基板の製造方法及び多結晶シリコン基板
US12/745,521 US20100269903A1 (en) 2007-12-04 2008-11-28 Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-313430 2007-12-04
JP2007313430 2007-12-04

Publications (1)

Publication Number Publication Date
WO2009072438A1 true WO2009072438A1 (ja) 2009-06-11

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PCT/JP2008/071615 WO2009072438A1 (ja) 2007-12-04 2008-11-28 多結晶シリコン基板の製造方法及び多結晶シリコン基板

Country Status (4)

Country Link
US (1) US20100269903A1 (ja)
JP (1) JPWO2009072438A1 (ja)
TW (1) TW200940755A (ja)
WO (1) WO2009072438A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011145604A1 (ja) * 2010-05-18 2011-11-24 株式会社新菱 エッチング液およびシリコン基板の表面加工方法
WO2012023613A1 (ja) * 2010-08-20 2012-02-23 株式会社トクヤマ テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット
WO2012021026A3 (ko) * 2010-08-12 2012-05-03 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1)
WO2012021025A3 (ko) * 2010-08-12 2012-05-03 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (2)
CN102477260A (zh) * 2010-11-26 2012-05-30 安集微电子（上海）有限公司 一种化学机械抛光液
WO2012169721A1 (ko) * 2011-06-10 2012-12-13 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2013089338A1 (ko) * 2011-12-16 2013-06-20 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013089641A1 (en) * 2011-12-12 2013-06-20 Xu Shuyan Chemical texturing of monocrystalline silicon substrate
US8765001B2 (en) 2012-08-28 2014-07-01 Rohm And Haas Electronic Materials Llc Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance
TWI506122B (zh) * 2012-09-20 2015-11-01 財團法人工業技術研究院 一種半導體晶片之蝕刻組成物及蝕刻方法
TWI586789B (zh) * 2013-08-06 2017-06-11 東友精細化工有限公司 紋理蝕刻液組成物及結晶矽晶圓紋理蝕刻方法
CN111739954A (zh) * 2020-06-30 2020-10-02 苏州大学 晶硅太阳能电池及其制备方法

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JP2000001792A (ja) * 1998-03-18 2000-01-07 Siemens Solar Gmbh シリコン表面のピラミッド形組織ウエットエッチングのための方法及びエッチング溶液
JP2002057139A (ja) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP2003282520A (ja) * 2002-03-22 2003-10-03 Sanyo Electric Co Ltd 容器の洗浄方法及び太陽電池の製造方法
WO2007129555A1 (ja) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

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US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
CN1690120A (zh) * 2004-03-01 2005-11-02 三菱瓦斯化学株式会社 具有高减震能力的树脂组合物
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000001792A (ja) * 1998-03-18 2000-01-07 Siemens Solar Gmbh シリコン表面のピラミッド形組織ウエットエッチングのための方法及びエッチング溶液
JP2002057139A (ja) * 2000-08-09 2002-02-22 Sanyo Electric Co Ltd 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
JP2003282520A (ja) * 2002-03-22 2003-10-03 Sanyo Electric Co Ltd 容器の洗浄方法及び太陽電池の製造方法
WO2007129555A1 (ja) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011145604A1 (ja) * 2010-05-18 2011-11-24 株式会社新菱 エッチング液およびシリコン基板の表面加工方法
JP2012004528A (ja) * 2010-05-18 2012-01-05 Shinryo Corp エッチング液およびシリコン基板の表面加工方法
EP2573801A4 (en) * 2010-05-18 2015-03-11 Shinryo Corp ETCHING SOLUTION AND PROCESS FOR TREATING THE SURFACE OF A SILICON SUBSTRATE
KR101407988B1 (ko) * 2010-05-18 2014-06-18 가부시키가이샤 신료 에칭액 및 실리콘 기판의 표면가공 방법
US20130143403A1 (en) * 2010-08-12 2013-06-06 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
CN103069049A (zh) * 2010-08-12 2013-04-24 东友Fine-Chem股份有限公司 结晶状硅晶圆的纹理蚀刻组成物及纹理蚀刻方法（1）
WO2012021025A3 (ko) * 2010-08-12 2012-05-03 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (2)
EP2605289A2 (en) * 2010-08-12 2013-06-19 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
EP2605289A4 (en) * 2010-08-12 2013-06-19 Dongwoo Fine Chem Co Ltd ETCHING-TEXTURING AGENT COMPOSITION FOR CRYSTALLINE SILICON PLATEBOARD AND ETCHING-TEXTURING METHOD (1)
JP2013539212A (ja) * 2010-08-12 2013-10-17 ドンウー ファイン−ケム カンパニー リミテッド 結晶性シリコンウエハのテクスチャエッチング液組成物およびテクスチャエッチング方法（１）
WO2012021026A3 (ko) * 2010-08-12 2012-05-03 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭 방법 (1)
US9305792B2 (en) 2010-08-12 2016-04-05 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
WO2012023613A1 (ja) * 2010-08-20 2012-02-23 株式会社トクヤマ テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット
CN102477260A (zh) * 2010-11-26 2012-05-30 安集微电子（上海）有限公司 一种化学机械抛光液
CN102477260B (zh) * 2010-11-26 2014-12-03 安集微电子（上海）有限公司 一种化学机械抛光液
WO2012169721A1 (ko) * 2011-06-10 2012-12-13 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2013089338A1 (ko) * 2011-12-16 2013-06-20 동우화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법

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JPWO2009072438A1 (ja) 2011-04-21
US20100269903A1 (en) 2010-10-28
TW200940755A (en) 2009-10-01

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