WO2013089641A1 - Chemical texturing of monocrystalline silicon substrate - Google Patents
Chemical texturing of monocrystalline silicon substrate Download PDFInfo
- Publication number
- WO2013089641A1 WO2013089641A1 PCT/SG2011/000434 SG2011000434W WO2013089641A1 WO 2013089641 A1 WO2013089641 A1 WO 2013089641A1 SG 2011000434 W SG2011000434 W SG 2011000434W WO 2013089641 A1 WO2013089641 A1 WO 2013089641A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- texturing
- chemical
- minutes
- silicon wafer
- salicylate
- Prior art date
Links
- 239000000126 substance Substances 0.000 title claims abstract description 39
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 title abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 9
- 229960001860 salicylate Drugs 0.000 claims description 12
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011734 sodium Substances 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 229910003002 lithium salt Chemical class 0.000 claims description 4
- 159000000002 lithium salts Chemical class 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical class [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Chemical class 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000003385 sodium Chemical class 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims 2
- 150000003873 salicylate salts Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- FRMWBRPWYBNAFB-UHFFFAOYSA-M potassium salicylate Chemical compound [K+].OC1=CC=CC=C1C([O-])=O FRMWBRPWYBNAFB-UHFFFAOYSA-M 0.000 description 1
- 229960003629 potassium salicylate Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229960004025 sodium salicylate Drugs 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention provides a method for texturing a mono-crystalline silicon wafer, the method comprising: immersing said mono-crystalline silicon wafer in an aqueous solution of a salicylate, whose concentration ranges from about 0.5% to about 1% by weight for between about 5 minutes to about 10 minutes to produce generally a pyramical texture size of about 2 microns to about 4 microns; and heating said aqueous solution to a temperature between about 80 degree C to about 90 degree C.
- a salicylate whose concentration ranges from about 0.5% to about 1% by weight for between about 5 minutes to about 10 minutes to produce generally a pyramical texture size of about 2 microns to about 4 microns
- concentration of the salicylate ranges from about 0.5% to about 1% by weight and is in the form of a sodium, potassium or lithium salt.
- the base hydroxide is at a concentration of about 2% to about 3% by weight.
- a 125x125 mm 2 silicon wafer is immersed in the texturing chemical for a time ranging from about 5 minutes to about 10 minutes to produce generally a pyramidal texture - j
- FIG. 1 illustrates a high-resolution scanning electron micrograph of a textured mono- crystalline silicon surface using a texturing chemical of the present invention
- glycol may be added to increase wettability of the texturing chemical on the silicon surface and lithium salt of salicylate may be used.
Abstract
The present invention provides a texturing chemical (100) for forming pyramidal textures on a mono-crystalline silicon substrate to produce a light trapping layer within a silicon solar cell. The texturing chemical (100) contains a salicylate salt and sodium or potassium hydroxide. Texturing with this chemical (100) produces fine, uniform pyramidal texture of about 2 microns to about 4 microns at a fast process time of about 5 minutes to about 10 minutes on a 125 mm size silicon wafer.
Description
Chemical Texturing of Monocrystalline Silicon Substrate
Field of Invention
[001] The present invention relates to chemical texturing of monocrystalline silicon substrate in the manufacture of solar cells.
Background
[002] (100) surface orientated crystalline silicon wafers are usually Used for manufacturing silicon solar cell. Etching of silicon is highly anisotropic and this (l OO)-orientated wafers is advantageous in that the <1 1 1> planes act as etch stops layers and etching of the <100> and <1 10>-crystal planes form square-based pyramids with <1 1 1> inclined surfaces. These pyramidal structures enhance light trapping by multiple reflections, thereby increase coupling of light into a solar cell. This approach of forming pyramidal structures or texture on the surface of the silicon wafer has been used to increase solar energy conversion performance of monocrystalline solar cells.
[003] Known techniques of texturing monocyrstalline silicon wafer involves immersing the wafers in sodium or potassium hydroxide, isopropyl alcohol (IPA) and glycol at a temperature of about 65 to 95 degree C. However, this solution suffers from a high rate of evaporation of the IPA and high waste disposal costs of the spent chemicals.
[004] US Patent No. 6, 197,61 1 issued to Mitsubishi Denki KK describes the use of a silicon etching chemical containing sodium carbonate at a temperature range of about 80 - 100 degree C. This approach promises highly uniform silicon texturing at low production costs by doing away with the use of IPA.
[005] Despite development of many texturing chemicals, there still exists a need for another type of chemical recipe for texturing monocrystalline silicon wafers, especially with the general push for improving solar cell performance and lowering the manufacturing costs.
Summary
[006] The following presents a simplified summary to provide a basic understanding of the present invention. This summary is not an extensive overview of the invention, and is not intended to identify key features of the invention. Rather, it is to present some of the inventive concepts of this invention in a generalised form as a prelude to the detailed description that is to follow.
[007] The present invention provides a chemical solution for texturing mono-crystalline silicon substrate to increase coupling of light into a solar cell. The texturing solution contains about salt of a salicylate in a base solution of sodium or potassium hydroxide. Advantageous use of the chemical solution includes fast texturing rate of about 5-10 minutes for a 125x125 mm2 monocrystalline silicon wafer and uniform distribution or density of texturing. In addition, the texturing chemical is environmentally friendly and can be disposed of without need for waste treament.
[008] In one embodiment, the present invention provides a texturing chemical for use in the manufacture of mono-crystalline silicon solar cell, with the texturing chemical comprising an aqueous solution of a salicylate.
[009] In another embodiment, the present invention provides a method for texturing a mono-crystalline silicon wafer, the method comprising: immersing said mono-crystalline silicon wafer in an aqueous solution of a salicylate, whose concentration ranges from about 0.5% to about 1% by weight for between about 5 minutes to about 10 minutes to produce generally a pyramical texture size of about 2 microns to about 4 microns; and heating said aqueous solution to a temperature between about 80 degree C to about 90 degree C.
[0010] In one embodiment of the texturing chemical, concentration of the salicylate ranges from about 0.5% to about 1% by weight and is in the form of a sodium, potassium or lithium salt. The base hydroxide is at a concentration of about 2% to about 3% by weight. In use, a 125x125 mm2 silicon wafer is immersed in the texturing chemical for a time ranging from about 5 minutes to about 10 minutes to produce generally a pyramidal texture
- j
size of about 2 microns to about 4 microns when said texturing chemical is heated between about 80 to about 90 degree C.
Brief Description of the Drawings
[0011] This invention will be described by way of non-limiting embodiments of the present invention, with reference to the accompanying drawings, in which:
[0012] FIG. 1 illustrates a high-resolution scanning electron micrograph of a textured mono- crystalline silicon surface using a texturing chemical of the present invention; and
[0013] FIG. 2 illustrates reflectance of a textured mono-crystalline silicon surface using the texturing chemical of the present invention compared with reflectance of a mono-crystalline silicon surface before texturing.
Detailed Description
[0014] One or more specific and alternative embodiments of the present invention will now be described with reference to the attached drawings. It shall be apparent to one skilled in the art, however, that this invention may be practised without such specific details. Some of the details may not be described at length so as not to obscure the invention. For ease of reference, common reference numerals or series of numerals will be used throughout the figures when referring to the same or similar features common to the figures.
[0015] The present invention discloses a wet chemical texturing solution 100 for forming pyramidal structures on (lOO)-orientated silicon wafers. This texturing chemical solution 100 comprises sodium or potassium salt of salicylate, ie. HOC6H4COO-Na or HOC6H4COO-K. FIG. 1 shows a high resolution scanning electron microscope (SEM) micrograph of a mono-crystalline silicon wafer that has been chemically textured with the texturing chemical 100. As seen in FIG. 1 , the pyramidal textures are about 2 micron to
about 4 microns at their bases and they are uniformly distributed over the silicon wafer surface.
[0016] In one embodiment, preparation of the texturing chemical 100 involves dissolving sodium or potassium salicylate to give a concentration of about 0.5 to about 1 % by weight in a base solution of about 2% to about 3 % by weight of sodium or potassium hydroxide. In use, a chemically polished silicon wafer is immersed in the texturing chemical 100, which is heated to between about 80 degree C to about 90 degree C and the texturing time for complete texturing on a 125 mm size silicon wafer is between about 5 minutes to about 10 minutes. During texturing, hydrogen gas is evolved. To ensure uniform texturing, such as to prevent streaking caused by release of hydrogen gas, the silicon wafers are mechanically agitated. Alternatively or in addition, the texturing solution is agitated during texturing.
[0017] Prior to texturing of a silicon wafer, each silicon wafer is cleaned, for example, in acetone to remove any organic contaminants that remain on the silicon surface. This cleaning step with acetone may be performed with or without an ultrasonic cleaner. This may then be followed by cleaning in an alcohol. Each wafer is then rinsed for about 5 to 10 minutes in deionised (DI) water and blown dry with nitrogen gas.
[0018] If the starting wafer surface is not yet chemically polished, there is a layer of mechanical saw damage on the silicon surface. The saw damage layer may contain abraded metal from the saw wire after a wafer is cut from an ingot; the saw damage layer may also contain grinding abrasive when the silicon surface is planarised on a polisher. This saw damage layer is removed by soaking the silicon wafer in a solution of about 20% sodium hydroxide or potassium hydroxide for between about 10 minutes to about 15 minutes. This is followed by neutralisation with 10% hydrochloric acid and a final rinse with DI water.
[0019] In carrying out an experiment to verify the present invention, 5 pieces of 125x125 mm2 monocrystalline silicon wafers with (100) crystal surface were cleaned and chemically polished. Reflectance of the chemically polished silicon wafers were then measured with a spectro radiometer using a standard 150 mm diameter integrating sphere covering a wavelength from about 200 nm to about 2500 nm. FIG. 2 shows the reflectance characteristic in the 400-800 nm spectrum of the untextured silicon wafers. The polished
silicon wafers were then chemically textured by immersing them in the texturing chemical 100 and the reflectance characteristics of the textured silicon wafers were again measured with the spectroradiometer. As can be seen in FIG. 2, the reflectance of the textured silicon surfaces is significantly reduced from about 12% to about 3%. The reduced reflectance of the textured silicon surface means an increase in light trapping, which will lead to higher conversion performance of solar cells.
[0020] An advantage of the present invention is the fast rate of texturing according to the present invention. The short process time of between 5-10minutes will contribute to lowering the overall costs of manufacturing solar cells. In addition, the present texturing chemical recipe does not suffer from the variability of IPA concentration of conventional texturing recipe; this means that there is little or no variability in the distribution or density of the pyramidal structures formed with the texturing chemical 100. Another advantage of the present invention is that the salt of salicylate is not poisonous; in other words, this texturing chemical is environmentally friendly and can be disposed of without need for any waste treatment. This texturing chemical 100 can substitute the conventional texturing chemical with only minor changes, if any, to the existing manufacturing processes.
[0021] While specific embodiments have been described and illustrated, it is understood that many changes, modifications, variations and combinations thereof could be made to the present invention without departing from the scope of the present invention. For example, glycol may be added to increase wettability of the texturing chemical on the silicon surface and lithium salt of salicylate may be used.
Claims
1. A texturing chemical for use in the manufacture of mono-crystalline silicon solar cell comprising:
an aqueous solution of a salicylate.
2. A texturing chemical according to claim 1 , wherein concentration of the salicylate solution ranges from about 0.5 % to about 1% by weight.
3. A texturing chemical according to claim 1 or 2, wherein the salicylate is in the form of a sodium, potassium or lithium salt.
4. A texturing chemical according to any one of claims 1-3, further comprising sodium or potassium hydroxide at a concentration ranging from about 2% to about 3% by weight.
5. Use of a texturing chemical according to any one of claims 1 -4, wherein a silicon wafer is immersed in said texturing chemical for a time ranging from about 5 minutes to about 10 minutes to produce generally a pyramidal texture size of about 2 microns to about 4 microns when said texturing chemical is heated between about 80 to about 90 degree C.
6. A method of texturing a mono-crystalline silicon wafer, said method comprising: immersing said mono-crystalline silicon wafer in an aqueous solution of a salicylate, whose concentration ranges from about 0.5% to about 1 % by weight for between about 5 minutes to about 10 minutes to produce generally a pyramical texture size of about 2 microns to about 4 microns; and
heating said aqueous solution to a temperature between about 80 degree C to about 90 degree C.
7. A method according to claim 6, wherein said salicylate is in the form of sodium, potassium or lithium salt.
8. A method according to claim 6 or 7, further comprising: adding sodium or potassium hydroxide into said aqueous solution at a concentration ranging from about 2% to about 3% by weight.
9. A method according to any one of claims 6-8, fu rther comprising:
rinsing said silicon wafer in an aqueous solution of hydrochloric acid followed by rinsing it in deionised water,
10. A method according to any one of claims 6-9 is preceded by:
cleaning said silicon wafer in acetone and rinsing it in deionised water.
1 1. A method according to claim 10, wherein said cleaning in acetone is followed by cleaning in an alcohol.
12. A method according to claim 10 or 1 1 , wherein said cleaning and rinsing are carried out in an ultrasonic cleaner.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/SG2011/000434 WO2013089641A1 (en) | 2011-12-12 | 2011-12-12 | Chemical texturing of monocrystalline silicon substrate |
| SG11201401172XA SG11201401172XA (en) | 2011-12-12 | 2011-12-12 | Chemical texturing of monocrystalline silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/SG2011/000434 WO2013089641A1 (en) | 2011-12-12 | 2011-12-12 | Chemical texturing of monocrystalline silicon substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2013089641A1 true WO2013089641A1 (en) | 2013-06-20 |
Family
ID=48612954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/SG2011/000434 WO2013089641A1 (en) | 2011-12-12 | 2011-12-12 | Chemical texturing of monocrystalline silicon substrate |
Country Status (2)
| Country | Link |
|---|---|
| SG (1) | SG11201401172XA (en) |
| WO (1) | WO2013089641A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2600076C1 (en) * | 2015-07-08 | 2016-10-20 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method of producing light-absorbing silicon structure |
| CN108219071A (en) * | 2018-01-19 | 2018-06-29 | 温岭汉德高分子科技有限公司 | A kind of chondroitin sulfate of fine-hair maring using monocrystalline silicon slice-poly-（Vinyl pyrrolidone-vinylpyridine）The preparation method of copolymer |
| EP3840060A1 (en) * | 2019-12-18 | 2021-06-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for forming patterns on the surface of a silicon crystalline substrate |
| CN115261995A (en) * | 2022-08-11 | 2022-11-01 | 陕西科技大学 | Crystal face micro-structuring auxiliary agent and preparation method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| US6451218B1 (en) * | 1998-03-18 | 2002-09-17 | Siemens Solar Gmbh | Method for the wet chemical pyramidal texture etching of silicon surfaces |
| US20090266414A1 (en) * | 2006-05-02 | 2009-10-29 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| KR20100094479A (en) * | 2007-10-31 | 2010-08-26 | 미쓰비시 가가꾸 가부시키가이샤 | Etching method and method for manufacturing optical/electronic device using the same |
| US20100269903A1 (en) * | 2007-12-04 | 2010-10-28 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate |
| US20110092074A1 (en) * | 2007-12-06 | 2011-04-21 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Texturing and cleaning agent for the surface treatment of wafers and use thereof |
-
2011
- 2011-12-12 SG SG11201401172XA patent/SG11201401172XA/en unknown
- 2011-12-12 WO PCT/SG2011/000434 patent/WO2013089641A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
| US6451218B1 (en) * | 1998-03-18 | 2002-09-17 | Siemens Solar Gmbh | Method for the wet chemical pyramidal texture etching of silicon surfaces |
| US20090266414A1 (en) * | 2006-05-02 | 2009-10-29 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| KR20100094479A (en) * | 2007-10-31 | 2010-08-26 | 미쓰비시 가가꾸 가부시키가이샤 | Etching method and method for manufacturing optical/electronic device using the same |
| US20100269903A1 (en) * | 2007-12-04 | 2010-10-28 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate |
| US20110092074A1 (en) * | 2007-12-06 | 2011-04-21 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Texturing and cleaning agent for the surface treatment of wafers and use thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2600076C1 (en) * | 2015-07-08 | 2016-10-20 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Method of producing light-absorbing silicon structure |
| CN108219071A (en) * | 2018-01-19 | 2018-06-29 | 温岭汉德高分子科技有限公司 | A kind of chondroitin sulfate of fine-hair maring using monocrystalline silicon slice-poly-（Vinyl pyrrolidone-vinylpyridine）The preparation method of copolymer |
| CN108219071B (en) * | 2018-01-19 | 2020-03-10 | 温岭汉德高分子科技有限公司 | Preparation method of chondroitin sulfate-poly (vinylpyrrolidone-vinylpyridine) copolymer for texturing monocrystalline silicon wafers |
| EP3840060A1 (en) * | 2019-12-18 | 2021-06-23 | Commissariat à l'Energie Atomique et aux Energies Alternatives | Method for forming patterns on the surface of a silicon crystalline substrate |
| CN115261995A (en) * | 2022-08-11 | 2022-11-01 | 陕西科技大学 | Crystal face micro-structuring auxiliary agent and preparation method and application thereof |
| CN115261995B (en) * | 2022-08-11 | 2023-07-21 | 陕西科技大学 | Crystal face micro-structuring auxiliary agent and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11201401172XA (en) | 2014-09-26 |
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