SG11201401172XA - Chemical texturing of monocrystalline silicon substrate - Google Patents

Chemical texturing of monocrystalline silicon substrate

Info

Publication number
SG11201401172XA
SG11201401172XA SG11201401172XA SG11201401172XA SG11201401172XA SG 11201401172X A SG11201401172X A SG 11201401172XA SG 11201401172X A SG11201401172X A SG 11201401172XA SG 11201401172X A SG11201401172X A SG 11201401172XA SG 11201401172X A SG11201401172X A SG 11201401172XA
Authority
SG
Singapore
Prior art keywords
silicon substrate
monocrystalline silicon
chemical texturing
texturing
chemical
Prior art date
Application number
SG11201401172XA
Inventor
Shiyong Huang
Shuyan Xu
Original Assignee
Shuyan Xu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shuyan Xu filed Critical Shuyan Xu
Publication of SG11201401172XA publication Critical patent/SG11201401172XA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
SG11201401172XA 2011-12-12 2011-12-12 Chemical texturing of monocrystalline silicon substrate SG11201401172XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2011/000434 WO2013089641A1 (en) 2011-12-12 2011-12-12 Chemical texturing of monocrystalline silicon substrate

Publications (1)

Publication Number Publication Date
SG11201401172XA true SG11201401172XA (en) 2014-09-26

Family

ID=48612954

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401172XA SG11201401172XA (en) 2011-12-12 2011-12-12 Chemical texturing of monocrystalline silicon substrate

Country Status (2)

Country Link
SG (1) SG11201401172XA (en)
WO (1) WO2013089641A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2600076C1 (en) * 2015-07-08 2016-10-20 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Method of producing light-absorbing silicon structure
CN108219071B (en) * 2018-01-19 2020-03-10 温岭汉德高分子科技有限公司 Preparation method of chondroitin sulfate-poly (vinylpyrrolidone-vinylpyridine) copolymer for texturing monocrystalline silicon wafers
FR3105583B1 (en) * 2019-12-18 2023-06-30 Commissariat Energie Atomique CRYSTALLINE SILICON SUBSTRATE COMPRISING A STRUCTURED SURFACE
CN115261995B (en) * 2022-08-11 2023-07-21 陕西科技大学 Crystal face micro-structuring auxiliary agent and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
DE19811878C2 (en) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Process and etching solution for wet chemical pyramidal texture etching of silicon surfaces
KR101010531B1 (en) * 2006-05-02 2011-01-24 스페이스 에너지 가부시키가이샤 Method for manufacturing semiconductor substrate, sola semiconductor substrate, and etching liquid
WO2009057764A1 (en) * 2007-10-31 2009-05-07 Mitsubishi Chemical Corporation Etching method and method for manufacturing optical/electronic device using the same
US20100269903A1 (en) * 2007-12-04 2010-10-28 Mimasu Semiconductor Industry Co., Ltd. Process for producing polycrystalline silicon substrate and polycrystalline silicon substrate
DE102007058829A1 (en) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Texture and cleaning medium for surface treatment of wafers and their use

Also Published As

Publication number Publication date
WO2013089641A1 (en) 2013-06-20

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