WO2008147116A2 - Solar cell and method of fabricating the same - Google Patents
Solar cell and method of fabricating the same Download PDFInfo
- Publication number
- WO2008147116A2 WO2008147116A2 PCT/KR2008/003010 KR2008003010W WO2008147116A2 WO 2008147116 A2 WO2008147116 A2 WO 2008147116A2 KR 2008003010 W KR2008003010 W KR 2008003010W WO 2008147116 A2 WO2008147116 A2 WO 2008147116A2
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- WIPO (PCT)
- Prior art keywords
- semiconductor layer
- electrode
- pillars
- solar cell
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 182
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims 4
- 230000008569 process Effects 0.000 description 15
- 238000000151 deposition Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Definitions
- the present invention relates to a solar cell, and more particularly, to a solar cell having an improved light absorbing efficiency and a method of fabricating the solar cell.
- the solar cell for converting solar energy into electric energy has been developed rapidly.
- the solar cell may be divided into a solar thermal cell and a photovoltaic solar cell.
- the solar thermal cell generates steam for rotating a turbine using solar thermal energy
- the photovoltaic solar cell converts solar photons into electric energy using semiconductors.
- the photovoltaic solar cell which absorbs light and converts the light into electric energy using an electron of a positive (P) type semiconductor and a hole of a negative (N) type semiconductor, is developed widely.
- the photovoltaic solar cell is referred to as a solar cell.
- the solar cell using the semiconductors has the substantially same structure as PN junction diode.
- the electron and the hole are induced in the semiconductors due to light energy.
- the hole and the electron has a weak interaction.
- the electron in a covalent bond is exited to form an electron-hole pair as a carrier.
- the carrier generated by light has a steady-state by recombination.
- the electron and the hole, which are generated by light are transferred into the N type semiconductor and the P type semiconductor, respectively, by an inside electric field. Accordingly, the electron and the hole are concentrated on facing electrodes, respectively, to be used as a power.
- a thin film of the semiconductor is formed by one of a vapor phase growth method, a spray pyrolysis method, a zone melting re-crystallization method, a solid phase crystallization method, and so on.
- the zone melting re- crystallization method and the solid phase crystallization method have a relatively high efficiency.
- a substrate of glass or metallic material can not be available. They require a substrate having a high heat stability such that production costs increases.
- an amorphous silicon thin film or a polycrystalline compound thin film are deposited by the vapor phase growth method or the spray pyrolysis method.
- they have poor efficiency, for example, less than about 10 %. Accordingly, it is required to study a method of fabricating a solar cell having high efficiency and being available on a glass substrate.
- FIG. 1 is a cross-sectional view of the related art solar cell.
- the solar cell 10 includes a substrate 12 and a transparent conductive oxide electrode 14, a P type semiconductor layer 16, an intrinsic semiconductor layer 18, an N type semiconductor layer 20 and a metal electrode 22 stacked on the substrate 12.
- the related art solar cell has a flat shape. Accordingly, when the intrinsic semiconductor as an active layer absorbs light through the substrate and the transparent conductive oxide electrode to generate an electrode-hole pair, the intrinsic semiconductor should be formed to be thick or a dual cell having a laminated junction structure, for example, a tandem structure, is required for increasing an amount of absorbed light.
- the solar cell has a thicker intrinsic semiconductor layer. However, it causes problems of increase of production costs and production time.
- the solar cell having an intrinsic semiconductor layer as a dual cell, which has a laminated junction structure, is provided. However, it causes problems of increase of production costs and production time, and there is increased possibility of deterioration.
- embodiments of the invention is directed to a solar cell and a method of fabricating the same that substantially obviate one or more of the problems due to limitations and disadvantages of the related art are described.
- An object of the embodiments of the invention is to provide a solar cell having an intrinsic semiconductor layer as an active layer, which absorbs increased amount of light, and a method of fabricating the solar cell.
- a solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer.
- a method of fabricating a solar cell includes forming a first electrode on a substrate; forming a plurality of pillars on the first electrode; forming a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and forming a second electrode over the semiconductor layer.
- a solar cell in another aspect, includes a plurality of pillars on a surface of a substrate; a first electrode on the surface of the substrate having the plurality of pillars; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the substrate; and a second electrode over the semiconductor layer.
- a method of fabricating a solar cell includes forming a plurality of pillars on a surface of the substrate; forming a first electrode on the surface of the substrate having the plurality of pillars; forming a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the substrate; and forming a second electrode over the semiconductor layer.
- a solar cell and a method of fabricating the same there is a plurality of pillars that forms a step difference. Since a semiconductor layer, for example, an intrinsic semiconductor layer, is formed on the plurality of pillars, the semiconductor layer has a step difference due to the step difference. As a result, a surface area of the semiconductor layer is greater than a surface area of a layer, for example, a substrate under the semiconductor layer, having an even surface. Accordingly, the semiconductor can absorb an increased amount of light, and the solar cell can provide an increased amount of electromotive force.
- a semiconductor layer for example, an intrinsic semiconductor layer
- FIG. 1 is a cross-sectional view of the related art solar cell
- FIG. 2 is a cross-sectional view of a solar cell according to a first embodiment of the present invention
- FIG. 3 is a plan view of a solar cell according to a first embodiment of the present invention
- FIGs. 4 and 5 are cross-sectional views showing a fabricating process of a solar cell according to a first embodiment of the present invention
- FIG. 6 is a plan view of a solar cell according to a second embodiment of the present invention.
- FIG. 7 is a cross-sectional view of a solar cell according to a third embodiment of the present invention.
- FIGs. 8 to 11 are cross-sectional views showing a fabricating process of a solar cell according to a third embodiment of the present invention.
- FIGs. 12 to 14 are plan views of a pillar in a solar cell according to third, fourth and fifth embodiments of the present invention, respectively;
- FIG. 15 is a schematic view showing a sandblasting process according to the present invention.
- FIGs. 16 and 17 are cross-sectional views showing a fabricating process of a solar cell using a paste according to the present invention. Best Mode for Carrying Out the Invention
- FIG. 2 is a cross-sectional view of a solar cell according to a first embodiment of the present invention
- FIG. 3 is a plan view of a solar cell according to a first embodiment of the present invention
- FIGs. 4 and 5 are cross-sectional views showing a fabricating process of a solar cell according to a first embodiment of the present invention.
- a solar cell 100 includes a substrate 112, a first electrode 114, a plurality of pillars 130, a first semiconductor layer 116, an intrinsic semiconductor layer 118, a second semiconductor layer 120, a reflective layer 140 and a second electrode 122.
- the substrate 112 may be formed of transparent glass and have an insulating property.
- the first electrode 114 may be formed of a transparent conductive oxide material, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) and disposed on the substrate 112.
- the plurality of pillars 130 have a cylinder shape and are disposed on the first electrode 114.
- the first semiconductor layer 116 has a positive (P) type and formed on the first electrode 114 and the plurality of pillars 130. Namely, a P type impurity is doped into the first semiconductor layer 116.
- the intrinsic semiconductor layer 118 functions as an active layer and is disposed on the first semiconductor layer 116. Namely, no impurity is doped into the intrinsic semiconductor layer 118. Since the pillars 130 protrude from the first electrode 114, not only the first semiconductor layer 116 but also the intrinsic semiconductor layer 118 has a step difference.
- the intrinsic semiconductor layer 118 has a concave portion and a convex portion. The convex portion corresponds to each of the pillars 130, and the concave portion disposed between adjacent convex portions.
- the substrate 112 and the first electrode 114 have an even surface, while the intrinsic semiconductor layer 118 has an uneven surface. Accordingly, a surface area of the intrinsic semiconductor layer 118 is greater than that of the first electrode 114 and the substrate 112. Since the intrinsic semiconductor layer 118 has an increased surface area, an amount of light absorbed by the intrinsic semiconductor layer 118 increases. Accordingly, the solar cell can provide an increased amount of electromotive force.
- the second semiconductor layer 120 has a negative (N) type and is disposed on the intrinsic semiconductor layer 118. Namely, an N type impurity is doped into the second semiconductor layer 120.
- the reflective layer 140 is disposed on the second semiconductor layer 120, and the second electrode 122 formed of a metallic material is disposed on the reflective layer 140.
- the first electrode 114 is formed on a first surface of the substrate 112. Light is incident on a second surface, which is opposite to the first surface, of the substrate 112 and transferred to the first electrode 114. Light passing through the substrate 112 is incident on the intrinsic semiconductor layer 118 through the first electrode 114 and the first semiconductor layer 116. The first electrode 114 is formed to obtain an ohmic contact with the first semiconductor layer 116. Carrier generated in the intrinsic semiconductor layer 118 by light is induced into the first electrode 114 by the first semiconductor layer 116. As mentioned above, the first semiconductor layer 116 has the P type. The intrinsic semiconductor layer 118 as the active layer absorbs light to generate the carrier. Namely, the intrinsic semiconductor layer 118 is formed of an intrinsic semiconductor material.
- the carrier generated in the intrinsic semiconductor layer 118 is induced into the second electrode 120 by the second semiconductor layer 120.
- the second electrode 120 has the N type.
- the reflective layer 140 reflects the light, which is incident through the substrate 112, such that light is incident again on the intrinsic semiconductor layer 118.
- a line (not shown) is connected to the second electrode 122 to obtain an electromotive force.
- the plurality of pillars 130 having a cylinder shape are disposed on the first electrode 114 (of FIG. 2) of a transparent conductive oxide material.
- a distance between two adjacent pillars 130 is determined depending on a respective thickness of various layers stacked over the pillars 130.
- the pillars 130 is formed to maximize a surface area of the intrinsic semiconductor 118 (of FIG. 2) exposed to light.
- Each of the pillars 130 may have different cross-sectional shape and different arrangement than that of FIG. 2.
- FIG. 6 showing a plan view of a solar cell according to a second embodiment of the present invention
- the pillars 230 may have a cross shape in plan.
- a connecting line between one end of one axis and ends of the other axis has a curved shape 232.
- the pillars 130 have an oval shape of a major axis 132 and a minor axis 134.
- the pillars 130 are arranged to be spaced apart from each other by a pre-determined space.
- the pillar 130 in a second column 138 is located to correspond to a space between adjacent pillars 130 in a first column 136. Namely, the pillars 130 in the first column 136 and the pillars 130 in the second columns 138 are alternately arranged.
- a first electrode 114 is formed on a substrate 112 by depositing a transparent conductive material.
- the transparent conductive material is deposited by a chemical vapor deposition (CVD) method using tin oxide (SnO2) or zinc oxide (ZnO).
- CVD chemical vapor deposition
- SiO2 silicon oxide
- the silicon oxide layer is patterned by a photolithography to form a plurality of pillars 130.
- the pillars 130 may be formed of silicon nitride (SiNx) or photoresist. Both silicon nitride (SiNx) and photoresist have a transparent property. To maximize a surface area exposed to light of the intrinsic semiconductor layer (not shown), the pillars 130 is formed of a transparent material having a high optical transmittance. Moreover, the pillars 130 are arranged to have compact formation.
- a first semiconductor layer 116 is formed on the first electrode
- the first semiconductor layer 116 has a step due to the pillars 130.
- an intrinsic semiconductor layer 118 is formed on the first semiconductor layer
- a second semiconductor layer 120 is formed on the intrinsic semiconductor layer 118 by depositing an N type semiconductor material where N type impurities are doped.
- a reflective layer 140 is formed on the second semiconductor layer 120 by depositing a reflective material, for example, zinc oxide (ZnO).
- a second electrode is formed on the reflective layer 140.
- the second electrode is formed an opaque metallic material, for example, aluminum (Al).
- the substrate 112, the first electrode 114 and the reflective layer 140 is treated with a texturing process to have trapping properties for light.
- a texturing process most of light, which is incident on the substrate 112, is absorbed onto the intrinsic semiconductor layer 118. Namely, the texturing process prevents light being flowed off outside of the solar cell.
- light passing through the substrate 112 is trapped between the first electrode 114 and the reflective layer 140. The trapped light is absorbed onto the intrinsic semiconductor layer 118.
- the intrinsic semiconductor layer 118 absorbs light directly incident to the intrinsic semiconductor layer 118 through the substrate 112 and reflected on the reflective layer 140 where the texturing process is performed. Since the intrinsic semiconductor layer 118 has an increasing surface area due to the pillars 130, efficiency of generating an electron-hole pair is improved. Compared with the intrinsic semiconductor layer 118 in related art solar cell, the intrinsic semiconductor layer 118 in the solar cell of the present invention has an increasing surface area with the same cross-sectional area and the same thickness. Accordingly, the solar cell has improved efficiency. Mode for the Invention
- FIG. 7 is a cross-sectional view of a solar cell according to a third embodiment of the present invention
- FIGs. 8 to 11 are cross-sectional views showing a fabricating process of a solar cell according to a third embodiment of the present invention.
- a solar cell 300 includes a substrate 312 having a plurality of pillars 360, a first electrode 314, a first semiconductor layer 316, an intrinsic semiconductor layer 318, a second semiconductor layer 320, a reflective layer 340 and a second electrode 322.
- the plurality of pillars 360 are formed by etching portions of substrate 312 to protrude from a first surface of the substrate 312. Since the pillars 360 protrude from the substrate 312, not only the first electrode 314 and the first semiconductor layer 316 but also the intrinsic semiconductor layer 318 has a step difference.
- the intrinsic semiconductor layer 318 has a concave portion and a convex portion.
- the convex portion corresponds to each of the pillars 360, and the concave portion disposed between adjacent convex portions. Namely, the substrate 312 has an even surface, while the intrinsic semiconductor layer 318 has an uneven surface. Accordingly, a surface area of the intrinsic semiconductor layer 318 is greater than that of the substrate 312.
- the substrate 312 may be formed of transparent glass and have an insulating property.
- the first electrode 314 may be formed of a transparent conductive oxide material, for example, indium-tin-oxide (ITO) or indium- zinc-oxide (IZO) and disposed on the substrate 312.
- the first semiconductor layer 316 has a positive (P) type and formed on the first electrode 314.
- the intrinsic semiconductor layer 318 functions as an active layer and is disposed on the first semiconductor layer 316.
- the second semiconductor layer 320 has a negative (N) type and is disposed on the second semiconductor layer 320.
- the reflective layer 340 is disposed on the second semiconductor layer 320, and the second electrode 322 formed of a metallic material is disposed on the reflective layer 340.
- the plurality of pillars 360 is formed by etching portions of the substrate 312, a fabricating process is simplified with compared to that of the first embodiment. Because the intrinsic semiconductor layer 318 has a step due to the pillars 360, the intrinsic semiconductor layer 318 has an increasing surface area.
- FIG. 8 A method of fabricating the solar cell according to the second embodiment is explained with reference to FIGs. 8 to 11.
- a photosensitive material layer 313 is formed on a first surface of a substrate 312.
- a plurality of photosensitive material patterns 315 are formed on the first surface of the substrate 312.
- Each of the photosensitive material patterns 315 has an island shape.
- the substrate 312 is patterned using the plurality of photosensitive material patterns 315 (of FIG. 9) as a pattering mask by a sandblasting process to form a plurality of pillars 360.
- the pillars 360 correspond to the photosensitive material patterns 315 (of FIG. 9).
- FIGs. 12 to 14 showing various shapes of the pillars in plan
- the plan view of the pillars 360 has one of circular shape 360a in FIG. 12, an oval shape 360b in FIG. 13 and a cross shape 360c in FIG. 14.
- the pillars 360 are arranged in a matrix shape.
- the pillars 360 may be arranged in other shape.
- the pillar in a second virtual line is located to correspond to a space between two adjacent pillars in a first virtual line.
- a sandblaster 362 having a nozzle 362a is disposed over the substrate including the photosensitive material patterns 315.
- Abrasive particles 364 of aluminum oxide (A12O3) are sprayed onto the substrate 312 through the nozzle 362a. Portions of the substrate exposed by the photosensitive material patterns 315 are etched by the abrasive particles 364 such that each of the pillars 160 are formed under each of the photosensitive material patterns 315. Namely, the substrate 312 is etched using the photosensitive material patterns 315 as an etching mask.
- a dry film resist (DFR) may be laminated on the substrate 312. The DFR is exposed using a mask (not shown) and developed to form a plurality of DFR patterns. The DFR patterns function as an etching mask for the substrate 312.
- a first electrode 314 is formed on a substrate 312 having the pillars 360 by depositing a transparent conductive material.
- the transparent conductive material is deposited by a chemical vapor deposition (CVD) method using tin oxide (SnO2) or zinc oxide (ZnO).
- a first semiconductor layer 316 is formed on the first electrode 314 by depositing a P type semiconductor material, where P type impurities are doped, using a plasma enhanced chemical vapor deposition (PECVD) method.
- PECVD plasma enhanced chemical vapor deposition
- the first semiconductor layer 316 has a step due to the pillars 130.
- an intrinsic semiconductor layer 318 is formed on the first semiconductor layer 316 by depositing an intrinsic semiconductor material where no impurity is doped.
- the intrinsic semiconductor layer 318 also has a step. Accordingly, a surface area of the intrinsic semiconductor layer 318 increases.
- a second semiconductor layer 320 is formed on the intrinsic semiconductor layer 318 by depositing an N type semiconductor material where N type impurities are doped.
- a reflective layer 340 is formed on the second semiconductor layer 320 by depositing a reflective material, for example, zinc oxide (ZnO).
- a second electrode 322 (of FIG. 7) is formed on the reflective layer 340.
- the second electrode 322 (of FIG. 7) is formed an opaque metallic material, for example, aluminum (Al).
- FIGs. 16 and 17 are cross-sectional views showing a fabricating process of a solar cell using a paste according to the present invention.
- a paste pattern 470 having a gel state is formed on a substrate 412 by a screen printing method.
- the paste pattern 470 has a plurality of openings.
- a material of the paste pattern 470 has a reaction with the substrate 412 of glass to form a reaction portion 472.
- a portion 470 under the paste pattern 470 is altered by the reaction with the material of the paste pattern 470 such that the reaction portion 472 of the substrate 412 is disposed under the paste pattern 470.
- the reaction portion 472 has a different property than other portions of the substrate 312.
- reaction portion 472 and the paste pattern 470 are removed to form a plurality of pillars. Since the reaction portion 472 under the paste pattern 470 is removed, each of the plurality of pillars corresponds to each of the plurality of openings. Moreover, a first electrode, a first semiconductor layer, an intrinsic semiconductor layer, a second semiconductor layer, a reflective layer and a second electrode are stacked on the substrate 412 having the pillars.
- a solar cell has improved ability because a semiconductor layer of the solar cell has an increased surface area.
- the solar cell is available as an energy source without problems, for example, environment pollution.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/597,496 US20100132779A1 (en) | 2007-05-30 | 2008-05-29 | Solar cell and method of fabricating the same |
CN2008800179067A CN101681941B (en) | 2007-05-30 | 2008-05-29 | Solar cell and method of fabricating the same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2007-0052665 | 2007-05-30 | ||
KR20070052665 | 2007-05-30 | ||
KR1020070110332A KR101426941B1 (en) | 2007-05-30 | 2007-10-31 | Solar cell and method for fabricating the same |
KR10-2007-0110332 | 2007-10-31 |
Publications (2)
Publication Number | Publication Date |
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WO2008147116A2 true WO2008147116A2 (en) | 2008-12-04 |
WO2008147116A3 WO2008147116A3 (en) | 2009-01-15 |
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PCT/KR2008/003010 WO2008147116A2 (en) | 2007-05-30 | 2008-05-29 | Solar cell and method of fabricating the same |
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Citations (4)
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JP2000232232A (en) * | 1999-02-09 | 2000-08-22 | Sony Internatl Europ Gmbh | Electronic element and formation of electronic structure |
JP2001196700A (en) * | 1999-10-29 | 2001-07-19 | Nichia Chem Ind Ltd | Nitride semiconductor and growth method thereof |
WO2006046601A1 (en) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
KR20060074233A (en) * | 2004-12-27 | 2006-07-03 | 삼성전자주식회사 | Photovoltaic cell and manufacturing method thereof |
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2008
- 2008-05-29 WO PCT/KR2008/003010 patent/WO2008147116A2/en active Application Filing
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JP2000232232A (en) * | 1999-02-09 | 2000-08-22 | Sony Internatl Europ Gmbh | Electronic element and formation of electronic structure |
JP2001196700A (en) * | 1999-10-29 | 2001-07-19 | Nichia Chem Ind Ltd | Nitride semiconductor and growth method thereof |
WO2006046601A1 (en) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
KR20060074233A (en) * | 2004-12-27 | 2006-07-03 | 삼성전자주식회사 | Photovoltaic cell and manufacturing method thereof |
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