JPS6442824A - Wet etching - Google Patents
Wet etchingInfo
- Publication number
- JPS6442824A JPS6442824A JP20014887A JP20014887A JPS6442824A JP S6442824 A JPS6442824 A JP S6442824A JP 20014887 A JP20014887 A JP 20014887A JP 20014887 A JP20014887 A JP 20014887A JP S6442824 A JPS6442824 A JP S6442824A
- Authority
- JP
- Japan
- Prior art keywords
- water solution
- surface active
- potassium hydroxide
- active agent
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To obtain a silicon single crystal substrate without surface stains (attached foreign matters) free from fine wear over the surface thereof by using as a chemical solution a mixture of a certain water solution with an anionic surface active agent. CONSTITUTION:A mixture of a water solution containing more than 30wt.% of potassium hydroxide with an anionic surface active agent is used as a chemical solution. If the content of potassium hydroxide is less than 30wt.%, the etching effect thereof is small. If the concentration of the water solution is increased, a substance generated from the reaction between the potassium hydroxide water solution and a silicon single crystal is increased, thereby causing stains to adhere to the surface of the silicon. In order to remove the stains while increasing the concentration of the potassium hydroxide, a surface active agent is used. In a water solution where the concentration of alkali is high, however, many surface active agents cause a salting out, from which a poor stain removing effect results. In this case, an anionic surface active agent, which is free from such defect, is used. According to the constitution, a beautiful etching surface can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20014887A JPS6442824A (en) | 1987-08-11 | 1987-08-11 | Wet etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20014887A JPS6442824A (en) | 1987-08-11 | 1987-08-11 | Wet etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442824A true JPS6442824A (en) | 1989-02-15 |
Family
ID=16419588
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20014887A Pending JPS6442824A (en) | 1987-08-11 | 1987-08-11 | Wet etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442824A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972236A (en) * | 1996-08-12 | 1999-10-26 | Denso Corporation | Etchant, etching method using the same, and related etching apparatus |
| WO2006046601A1 (en) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| WO2011145604A1 (en) * | 2010-05-18 | 2011-11-24 | 株式会社新菱 | Etching solution, and method for processing surface of silicon substrate |
| WO2012023613A1 (en) * | 2010-08-20 | 2012-02-23 | 株式会社トクヤマ | Texture-forming composition, method for producing silicon substrate, and kit for preparing texture-forming composition |
| WO2013168813A1 (en) | 2012-05-11 | 2013-11-14 | 和光純薬工業株式会社 | Etching fluid and production method for silicon-based substrate using same |
| US10249505B2 (en) * | 2009-03-31 | 2019-04-02 | Kurita Water Industries Ltd. | Method for treating etching solution |
| CN111485290A (en) * | 2020-05-14 | 2020-08-04 | 杭州聚力氢能科技有限公司 | Texturing additive for single crystal silicon surface treatment, texturing agent and method for texturing single crystal silicon surface |
-
1987
- 1987-08-11 JP JP20014887A patent/JPS6442824A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5972236A (en) * | 1996-08-12 | 1999-10-26 | Denso Corporation | Etchant, etching method using the same, and related etching apparatus |
| WO2006046601A1 (en) * | 2004-10-28 | 2006-05-04 | Mimasu Semiconductor Industry Co., Ltd. | Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| US10249505B2 (en) * | 2009-03-31 | 2019-04-02 | Kurita Water Industries Ltd. | Method for treating etching solution |
| WO2011145604A1 (en) * | 2010-05-18 | 2011-11-24 | 株式会社新菱 | Etching solution, and method for processing surface of silicon substrate |
| JP2012004528A (en) * | 2010-05-18 | 2012-01-05 | Shinryo Corp | Etchant, and surface processing method of silicon substrate |
| CN102906863A (en) * | 2010-05-18 | 2013-01-30 | 株式会社新菱 | Etching solution, and method for processing surface of silicon substrate |
| KR101407988B1 (en) * | 2010-05-18 | 2014-06-18 | 가부시키가이샤 신료 | Etching solution, and method for processing surface of silicon substrate |
| WO2012023613A1 (en) * | 2010-08-20 | 2012-02-23 | 株式会社トクヤマ | Texture-forming composition, method for producing silicon substrate, and kit for preparing texture-forming composition |
| WO2013168813A1 (en) | 2012-05-11 | 2013-11-14 | 和光純薬工業株式会社 | Etching fluid and production method for silicon-based substrate using same |
| CN111485290A (en) * | 2020-05-14 | 2020-08-04 | 杭州聚力氢能科技有限公司 | Texturing additive for single crystal silicon surface treatment, texturing agent and method for texturing single crystal silicon surface |
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