NL7107040A - - Google Patents

Info

Publication number
NL7107040A
NL7107040A NL7107040A NL7107040A NL7107040A NL 7107040 A NL7107040 A NL 7107040A NL 7107040 A NL7107040 A NL 7107040A NL 7107040 A NL7107040 A NL 7107040A NL 7107040 A NL7107040 A NL 7107040A
Authority
NL
Netherlands
Application number
NL7107040A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7107040A priority Critical patent/NL7107040A/xx
Priority to ZA723230A priority patent/ZA723230B/xx
Priority to CA142,385A priority patent/CA970473A/en
Priority to GB362175A priority patent/GB1398866A/en
Priority to IE676/72A priority patent/IE37694B1/xx
Priority to CH753272A priority patent/CH551694A/xx
Priority to GB390675A priority patent/GB1398867A/en
Priority to NO1796/72A priority patent/NO135614C/no
Priority to GB362075A priority patent/GB1398865A/en
Priority to GB361975A priority patent/GB1398864A/en
Priority to DE19722224574D priority patent/DE2224574A1/de
Priority to GB2369972A priority patent/GB1398862A/en
Priority to SE7206613A priority patent/SE382137B/xx
Priority to DE2266042A priority patent/DE2266042C2/de
Priority to DE2266040A priority patent/DE2266040C2/de
Priority to BE783738A priority patent/BE783738A/xx
Priority to DE2266041A priority patent/DE2266041C2/de
Priority to DK252672AA priority patent/DK138198B/da
Priority to GB390775A priority patent/GB1398868A/en
Priority to AT439572A priority patent/AT361042B/de
Priority to DE2224574A priority patent/DE2224574C2/de
Priority to GB361875A priority patent/GB1398863A/en
Priority to IT68600/72A priority patent/IT958927B/it
Priority to ES403026A priority patent/ES403026A1/es
Priority to BR3222/72A priority patent/BR7203222D0/pt
Priority to AU42565/72A priority patent/AU474945B2/en
Priority to YU1355/72A priority patent/YU35934B/xx
Priority to AR242128A priority patent/AR193989A1/es
Priority to JP47049966A priority patent/JPS5215359B1/ja
Priority to FR7218313A priority patent/FR2138905B1/fr
Publication of NL7107040A publication Critical patent/NL7107040A/xx
Priority to AU70989/74A priority patent/AU493732B2/en
Priority to SE7507351A priority patent/SE404459B/xx
Priority to SE7507352A priority patent/SE404460B/xx
Priority to US05/653,131 priority patent/US4056810A/en
Priority to US05/653,472 priority patent/US4078208A/en
Priority to JP51026620A priority patent/JPS594862B2/ja
Priority to AT487877A priority patent/AT382041B/de
Priority to US05/876,219 priority patent/US4286177A/en
Priority to HK390/78A priority patent/HK39078A/xx
Priority to HK389/78A priority patent/HK38978A/xx
Priority to HK391/78A priority patent/HK39178A/xx
Priority to HK387/78A priority patent/HK38778A/xx
Priority to HK388/78A priority patent/HK38878A/xx
Priority to HK392/78A priority patent/HK39278A/xx
Priority to HK386/78A priority patent/HK38678A/xx
Priority to JP55086015A priority patent/JPS6019669B2/ja
Priority to JP8601480A priority patent/JPS568869A/ja
Priority to JP8602080A priority patent/JPS5638858A/ja
Priority to JP8601180A priority patent/JPS568867A/ja
Priority to JP55086018A priority patent/JPS5857910B2/ja
Priority to JP55086013A priority patent/JPS604593B2/ja
Priority to JP55086017A priority patent/JPS604594B2/ja
Priority to JP8601280A priority patent/JPS568868A/ja
Priority to JP8602180A priority patent/JPS5638859A/ja
Priority to JP8601980A priority patent/JPS5638857A/ja
Priority to JP8601680A priority patent/JPS5638854A/ja
Priority to JP8601080A priority patent/JPS568866A/ja
Priority to US06/212,582 priority patent/US4714842A/en
Priority to NLAANVRAGE8203799,A priority patent/NL187661C/xx
Priority to NLAANVRAGE8204809,A priority patent/NL187550C/xx
Priority to NLAANVRAGE8204833,A priority patent/NL187551C/xx
Priority to NLAANVRAGE8204877,A priority patent/NL188608C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/288—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/087—I2L integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Amplifiers (AREA)
NL7107040A 1971-05-22 1971-05-22 NL7107040A (zh)

Priority Applications (62)

Application Number Priority Date Filing Date Title
NL7107040A NL7107040A (zh) 1971-05-22 1971-05-22
ZA723230A ZA723230B (en) 1971-05-22 1972-05-12 Integrated circuit
CA142,385A CA970473A (en) 1971-05-22 1972-05-17 Integrated circuit charge injection biasing
GB362175A GB1398866A (en) 1971-05-22 1972-05-19 Integrated circuits
IE676/72A IE37694B1 (en) 1971-05-22 1972-05-19 Integrated circuit
CH753272A CH551694A (de) 1971-05-22 1972-05-19 Integrierte schaltung.
GB390675A GB1398867A (en) 1971-05-22 1972-05-19 Integrated circuits
NO1796/72A NO135614C (no) 1971-05-22 1972-05-19 Integrert krets.
GB362075A GB1398865A (en) 1971-05-22 1972-05-19 Integrated circuits
GB361975A GB1398864A (en) 1971-05-22 1972-05-19 Integrated circuits
DE19722224574D DE2224574A1 (de) 1971-05-22 1972-05-19 Integrierte Schaltung
GB2369972A GB1398862A (en) 1971-05-22 1972-05-19 Integrated circuits
SE7206613A SE382137B (sv) 1971-05-22 1972-05-19 Integrerad krets med ett antal kopplingselement
DE2266042A DE2266042C2 (zh) 1971-05-22 1972-05-19
DE2266040A DE2266040C2 (zh) 1971-05-22 1972-05-19
BE783738A BE783738A (fr) 1971-05-22 1972-05-19 Circuit integre
DE2266041A DE2266041C2 (zh) 1971-05-22 1972-05-19
DK252672AA DK138198B (da) 1971-05-22 1972-05-19 Integreret kredsløb.
GB390775A GB1398868A (en) 1971-05-22 1972-05-19 Integrated circuits
AT439572A AT361042B (de) 1971-05-22 1972-05-19 Integrierte halbleiterschaltung
DE2224574A DE2224574C2 (zh) 1971-05-22 1972-05-19
GB361875A GB1398863A (en) 1971-05-22 1972-05-19 Integrated circuits
IT68600/72A IT958927B (it) 1971-05-22 1972-05-19 Circuito integrato
ES403026A ES403026A1 (es) 1971-05-22 1972-05-20 Un circuito integrado.
BR3222/72A BR7203222D0 (pt) 1971-05-22 1972-05-22 Circuito integrado
AU42565/72A AU474945B2 (en) 1971-05-22 1972-05-22 Integrated circuit
YU1355/72A YU35934B (en) 1971-05-22 1972-05-22 Intergrated circuit
AR242128A AR193989A1 (es) 1971-05-22 1972-05-22 Circuito integrado
JP47049966A JPS5215359B1 (zh) 1971-05-22 1972-05-22
FR7218313A FR2138905B1 (zh) 1971-05-22 1972-05-23
AU70989/74A AU493732B2 (en) 1974-07-08 Memory array
SE7507351A SE404459B (sv) 1971-05-22 1975-06-26 Integrerad krets
SE7507352A SE404460B (sv) 1971-05-22 1975-06-26 Integrerad krets
US05/653,131 US4056810A (en) 1971-05-22 1976-01-28 Integrated injection logic memory circuit
US05/653,472 US4078208A (en) 1971-05-22 1976-01-29 Linear amplifier circuit with integrated current injector
JP51026620A JPS594862B2 (ja) 1971-05-22 1976-03-11 集積回路
AT487877A AT382041B (de) 1971-05-22 1977-07-07 Integrierte halbleiterschaltung
US05/876,219 US4286177A (en) 1971-05-22 1978-02-09 Integrated injection logic circuits
HK390/78A HK39078A (en) 1971-05-22 1978-07-13 Integrated circuits
HK389/78A HK38978A (en) 1971-05-22 1978-07-13 Integrated circuits
HK391/78A HK39178A (en) 1971-05-22 1978-07-13 Integrated circuits
HK387/78A HK38778A (en) 1971-05-22 1978-07-13 Integrated circuits
HK388/78A HK38878A (en) 1971-05-22 1978-07-13 Integrated circuits
HK392/78A HK39278A (en) 1971-05-22 1978-07-13 Integrated circuits
HK386/78A HK38678A (en) 1971-05-22 1978-07-13 Integrated circuits
JP55086015A JPS6019669B2 (ja) 1971-05-22 1980-06-26 集積回路
JP8601480A JPS568869A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8602080A JPS5638858A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8601180A JPS568867A (en) 1971-05-22 1980-06-26 Integrated circuit
JP55086018A JPS5857910B2 (ja) 1971-05-22 1980-06-26 集積回路
JP55086013A JPS604593B2 (ja) 1971-05-22 1980-06-26 集積回路
JP55086017A JPS604594B2 (ja) 1971-05-22 1980-06-26 集積化直線増幅回路
JP8601280A JPS568868A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8602180A JPS5638859A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8601980A JPS5638857A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8601680A JPS5638854A (en) 1971-05-22 1980-06-26 Integrated circuit
JP8601080A JPS568866A (en) 1971-05-22 1980-06-26 Integrated circuit
US06/212,582 US4714842A (en) 1971-05-22 1980-12-03 Integrated injection logic circuits
NLAANVRAGE8203799,A NL187661C (nl) 1971-05-22 1982-09-30 Geintegreerde schakeling met een trekkerschakelingen bevattend geheugen.
NLAANVRAGE8204809,A NL187550C (nl) 1971-05-22 1982-12-13 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204833,A NL187551C (nl) 1971-05-22 1982-12-15 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204877,A NL188608C (nl) 1971-05-22 1982-12-17 Geintegreerde halfgeleiderschakeling.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7107040A NL7107040A (zh) 1971-05-22 1971-05-22

Publications (1)

Publication Number Publication Date
NL7107040A true NL7107040A (zh) 1972-11-24

Family

ID=19813233

Family Applications (5)

Application Number Title Priority Date Filing Date
NL7107040A NL7107040A (zh) 1971-05-22 1971-05-22
NLAANVRAGE8203799,A NL187661C (nl) 1971-05-22 1982-09-30 Geintegreerde schakeling met een trekkerschakelingen bevattend geheugen.
NLAANVRAGE8204809,A NL187550C (nl) 1971-05-22 1982-12-13 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204833,A NL187551C (nl) 1971-05-22 1982-12-15 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204877,A NL188608C (nl) 1971-05-22 1982-12-17 Geintegreerde halfgeleiderschakeling.

Family Applications After (4)

Application Number Title Priority Date Filing Date
NLAANVRAGE8203799,A NL187661C (nl) 1971-05-22 1982-09-30 Geintegreerde schakeling met een trekkerschakelingen bevattend geheugen.
NLAANVRAGE8204809,A NL187550C (nl) 1971-05-22 1982-12-13 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204833,A NL187551C (nl) 1971-05-22 1982-12-15 Geintegreerde schakeling met ten minste een stroominjektor.
NLAANVRAGE8204877,A NL188608C (nl) 1971-05-22 1982-12-17 Geintegreerde halfgeleiderschakeling.

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2545368A1 (de) * 1974-10-09 1976-06-16 Philips Nv Integrierte schaltung
US4035664A (en) * 1975-03-05 1977-07-12 International Business Machines Corporation Current hogging injection logic
DE2756535A1 (de) * 1976-12-31 1978-07-06 Philips Nv Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor
US4243896A (en) * 1975-04-14 1981-01-06 U.S. Philips Corporation I2 L Circuit with auxiliary transistor

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL160687C (nl) * 1972-06-10 1979-11-15 Philips Nv Toongenerator voor het opwekken van gekozen frequenties.
DE2344244C3 (de) * 1973-09-01 1982-11-25 Robert Bosch Gmbh, 7000 Stuttgart Laterale Transistorstruktur
FR2244262B1 (zh) * 1973-09-13 1978-09-29 Radiotechnique Compelec
US4153909A (en) * 1973-12-10 1979-05-08 National Semiconductor Corporation Gated collector lateral transistor structure and circuits using same
GB1507299A (en) * 1974-03-26 1978-04-12 Signetics Corp Integrated semiconductor devices
JPS5431872B2 (zh) * 1974-09-06 1979-10-09
DE2442773C3 (de) * 1974-09-06 1978-12-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Master-Slave-Flipflopschaltung
DE2442716C3 (de) * 1974-09-06 1984-06-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integriertes NOR-Gatter
DE2560485C2 (de) * 1974-10-09 1987-02-26 N.V. Philips' Gloeilampenfabrieken, Eindhoven Integrierte Schaltung mit einem mehreren I↑2↑L-Torschaltungen gemeinsamen Halbleiterkörper
NL7513827A (nl) * 1974-11-26 1976-05-31 Sony Corp Halfgeleiderinrichting, meer in het bijzonder volgens het principe van "integrated injection logic" werkende halfgeleiderinrichting.
DE2460150C2 (de) * 1974-12-19 1984-07-12 Ibm Deutschland Gmbh, 7000 Stuttgart Monolitisch integrierbare Speicheranordnung
US4119998A (en) * 1974-12-27 1978-10-10 Tokyo Shibaura Electric Co., Ltd. Integrated injection logic with both grid and internal double-diffused injectors
US4054900A (en) * 1974-12-27 1977-10-18 Tokyo Shibaura Electric Co., Ltd. I.I.L. with region connecting base of double diffused injector to substrate/emitter of switching transistor
JPS5615587B2 (zh) * 1974-12-27 1981-04-10
JPS561783B2 (zh) * 1974-12-27 1981-01-16
US4107719A (en) * 1975-02-19 1978-08-15 Siemens Aktiengesellschaft Inverse planar transistor
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
US4599635A (en) * 1975-08-28 1986-07-08 Hitachi, Ltd. Semiconductor integrated circuit device and method of producing same
FR2326810A1 (fr) * 1975-09-30 1977-04-29 Thomson Csf Nouveaux inverseurs logiques integres
FR2337431A1 (fr) * 1975-12-29 1977-07-29 Radiotechnique Compelec Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention
FR2337432A1 (fr) * 1975-12-29 1977-07-29 Radiotechnique Compelec Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention
DE2700587A1 (de) * 1976-01-15 1977-07-21 Itt Ind Gmbh Deutsche Monolithisch integrierte i hoch 2 l-speicherzelle
NL7606193A (nl) * 1976-06-09 1977-12-13 Philips Nv Geintegreerde schakeling.
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
JPS5325375A (en) * 1976-07-31 1978-03-09 Nippon Gakki Seizo Kk Semiconductor integrated circuit devi ce
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
DE2652103C2 (de) * 1976-11-16 1982-10-28 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung
FR2373163A1 (fr) * 1976-12-03 1978-06-30 Thomson Csf Structure pour circuits logiques
JPS588147B2 (ja) * 1976-12-08 1983-02-14 ヤマハ株式会社 半導体集積回路装置
JPS5847092B2 (ja) * 1976-12-14 1983-10-20 株式会社東芝 論理回路
US4067038A (en) * 1976-12-22 1978-01-03 Harris Corporation Substrate fed logic and method of fabrication
NL7700420A (nl) * 1977-01-17 1978-07-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
JPS53121487A (en) * 1977-03-30 1978-10-23 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type
JPS53122381A (en) * 1977-03-31 1978-10-25 Mitsubishi Electric Corp Semiconductor logic circuit device of electrostatic induction type
US4400689A (en) * 1977-04-07 1983-08-23 Analog Devices, Incorporated A-to-D Converter of the successive-approximation type
GB1584724A (en) * 1977-07-14 1981-02-18 Philips Electronic Associated Integrated injection logic circuits
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2014387B (en) * 1978-02-14 1982-05-19 Motorola Inc Differential to single-ended converter utilizing inverted transistors
US4348600A (en) * 1978-02-14 1982-09-07 Motorola, Inc. Controlled current source for I2 L to analog interfaces
DE2816949C3 (de) * 1978-04-19 1981-07-16 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung und deren Verwendung zum Aufbau einer Speicheranordnung
NL7806989A (nl) * 1978-06-29 1980-01-03 Philips Nv Geintegreerde schakeling.
US4199776A (en) * 1978-08-24 1980-04-22 Rca Corporation Integrated injection logic with floating reinjectors
JPS55145363A (en) * 1979-04-27 1980-11-12 Toshiba Corp Semiconductor device
US4274891A (en) * 1979-06-29 1981-06-23 International Business Machines Corporation Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition
US4458406A (en) * 1979-12-28 1984-07-10 Ibm Corporation Making LSI devices with double level polysilicon structures
US4412142A (en) * 1980-12-24 1983-10-25 General Electric Company Integrated circuit incorporating low voltage and high voltage semiconductor devices
US4475280A (en) * 1980-12-24 1984-10-09 General Electric Company Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices
JPS57116430A (en) * 1981-01-13 1982-07-20 Toshiba Corp Inverted logical circuit
US4654684A (en) * 1981-04-13 1987-03-31 International Business Machines Corp. Magnetically sensitive transistors utilizing Lorentz field potential modultion of carrier injection
JPS5947467B2 (ja) * 1981-09-01 1984-11-19 セイコーインスツルメンツ株式会社 温度センサ−用半導体素子
US4567500A (en) * 1981-12-01 1986-01-28 Rca Corporation Semiconductor structure for protecting integrated circuit devices
US4629912A (en) * 1982-02-02 1986-12-16 Fairchild Camera And Instrument Corp. Schottky shunt integrated injection
JPS58122611U (ja) * 1982-02-15 1983-08-20 カルソニックカンセイ株式会社 自動車用空気調和装置
JPS6048090A (ja) * 1983-08-26 1985-03-15 伊勢電子工業株式会社 螢光表示装置
JPS6074455A (ja) * 1983-09-29 1985-04-26 Fujitsu Ltd マスタスライス集積回路
JPH031424Y2 (zh) * 1985-02-08 1991-01-17
US4813017A (en) * 1985-10-28 1989-03-14 International Business Machines Corportion Semiconductor memory device and array
US4794277A (en) * 1986-01-13 1988-12-27 Unitrode Corporation Integrated circuit under-voltage lockout
JPS6241030A (ja) * 1986-05-09 1987-02-23 Sumitomo Rubber Ind Ltd タイヤの製造方法
US5087579A (en) * 1987-05-28 1992-02-11 Texas Instruments Incorporated Method for fabricating an integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias
US5060044A (en) * 1987-05-28 1991-10-22 Texas Instruments Incorporated Integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias
JPS6439120U (zh) * 1987-09-04 1989-03-08
EP0328905B1 (de) * 1988-02-15 1994-06-29 Siemens Aktiengesellschaft Schaltungsanordnung zum Schutze einer integrierten Schaltung
JPH0828423B2 (ja) * 1988-10-14 1996-03-21 日本電気株式会社 半導体記憶装置
JP3237757B2 (ja) * 1989-12-28 2001-12-10 呉羽化学工業株式会社 電子部品封止用樹脂組成物および封止電子部品
US4999687A (en) * 1990-04-25 1991-03-12 At&T Bell Laboratories Logic element and article comprising the element
JPH0721531U (ja) * 1991-07-22 1995-04-18 積水化成品工業株式会社 折り箱容器
JP2955106B2 (ja) * 1992-01-06 1999-10-04 三菱電機株式会社 半導体装置
US5244098A (en) * 1992-11-02 1993-09-14 The Read Corporation Material separating apparatus and method
JP2537308Y2 (ja) * 1993-08-18 1997-05-28 善孝 小林 自転車用サドルカバー入れ
US5978688A (en) * 1995-12-29 1999-11-02 Advanced Micro Devices, Inc. Apparatus and method for protocol interface
US6125139A (en) * 1995-12-29 2000-09-26 Advanced Micro Devices, Inc. Narrowband digital cordless telephone
US5943373A (en) * 1995-12-29 1999-08-24 Advanced Micro Devices, Inc. External protocol hooks system and method
US6978009B1 (en) 1996-08-20 2005-12-20 Legerity, Inc. Microprocessor-controlled full-duplex speakerphone using automatic gain control
US6514785B1 (en) * 2000-06-09 2003-02-04 Taiwan Semiconductor Manufacturing Company CMOS image sensor n-type pin-diode structure
US7598521B2 (en) * 2004-03-29 2009-10-06 Sanyo Electric Co., Ltd. Semiconductor device in which the emitter resistance is reduced
US7215204B2 (en) * 2004-12-29 2007-05-08 Agere Systems Inc. Intelligent high-power amplifier module
US7433192B2 (en) * 2004-12-29 2008-10-07 Agere Systems Inc. Packaging for electronic modules
CN104979045A (zh) * 2015-07-06 2015-10-14 余储 一种带有防火层的隔热屏罩的电缆
CN105047289A (zh) * 2015-07-06 2015-11-11 舒泳军 一种带滑槽滑块的隔热屏罩的电缆
US10249607B1 (en) 2017-12-15 2019-04-02 Texas Instruments Incorporated Internally stacked NPN with segmented collector
KR102239463B1 (ko) * 2020-11-25 2021-04-14 재단법인대구경북과학기술원 칼슘 이온 전지용 나시콘계 전극 조성물 및 이를 포함하는 칼슘 이온 전지

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
US2936384A (en) * 1957-04-12 1960-05-10 Hazeltine Research Inc Six junction transistor signaltranslating system
US3165710A (en) * 1961-03-27 1965-01-12 Westinghouse Electric Corp Solid state oscillator
US3177414A (en) * 1961-07-26 1965-04-06 Nippon Electric Co Device comprising a plurality of transistors
JPS4632972B1 (zh) * 1967-11-13 1971-09-27
US3517324A (en) * 1968-01-22 1970-06-23 Eastman Kodak Co Complementary emitter follower
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
US3817797A (en) * 1969-05-12 1974-06-18 Ibm Construction of monolithic chip and method of distributing power there-in for individaul electronic devices constructed thereon
BE756139A (fr) * 1969-09-15 1971-02-15 Rca Corp Circuit intermediaire integre pour le couplage d'un circuit de commandea impedance de sortie faible a une charge a impedance d'entree elevee
NL6917885A (zh) * 1969-11-28 1971-06-02
US3657612A (en) * 1970-04-20 1972-04-18 Ibm Inverse transistor with high current gain
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3778688A (en) * 1971-03-15 1973-12-11 Texas Instruments Inc Mos-bipolar high voltage driver circuit
DE2165729C3 (de) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung
US3708691A (en) * 1972-01-21 1973-01-02 Tektronix Inc Large scale integrated circuit of reduced area including counter
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
JPS4935030A (zh) * 1972-08-03 1974-04-01

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2545368A1 (de) * 1974-10-09 1976-06-16 Philips Nv Integrierte schaltung
US4035664A (en) * 1975-03-05 1977-07-12 International Business Machines Corporation Current hogging injection logic
US4243896A (en) * 1975-04-14 1981-01-06 U.S. Philips Corporation I2 L Circuit with auxiliary transistor
DE2756535A1 (de) * 1976-12-31 1978-07-06 Philips Nv Vorrichtung zur kopplung in der i hoch 2 l-technik betriebener transistoren mit einem auf hoeheren ruhestrom eingestellten transistor

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HK38778A (en) 1978-07-21
AU4256572A (en) 1973-11-29
NL187551C (nl) 1991-11-01
SE7507351L (sv) 1975-06-26
ATA439572A (de) 1980-07-15
NL8204833A (nl) 1983-04-05
JPS5623308B2 (zh) 1981-05-30
IE37694L (en) 1972-11-22
SE404459B (sv) 1978-10-02
JPS5638855A (en) 1981-04-14
YU135572A (en) 1980-12-31
NL187550C (nl) 1991-11-01
IE37694B1 (en) 1977-09-28
DK138198C (zh) 1978-12-27
GB1398862A (en) 1975-06-25
JPS5623310B2 (zh) 1981-05-30
DE2266041C2 (zh) 1992-03-12
HK39278A (en) 1978-07-21
JPS5638856A (en) 1981-04-14
YU35934B (en) 1981-08-31
NL187551B (nl) 1991-06-03
JPS568868A (en) 1981-01-29
JPS5857910B2 (ja) 1983-12-22
JPS6019669B2 (ja) 1985-05-17
SE382137B (sv) 1976-01-12
JPS568869A (en) 1981-01-29
BE783738A (fr) 1972-11-20
NL8203799A (nl) 1983-01-03
ZA723230B (en) 1973-12-19
JPS568870A (en) 1981-01-29
SE404460B (sv) 1978-10-02
JPS5623309B2 (zh) 1981-05-30
NO135614B (zh) 1977-01-17
DE2224574A1 (de) 1972-11-30
AU7098974A (en) 1976-01-08
JPS5638859A (en) 1981-04-14
JPS5712302B2 (zh) 1982-03-10
JPS594862B2 (ja) 1984-02-01
JPS5215359B1 (zh) 1977-04-28
IT958927B (it) 1973-10-30
US4078208A (en) 1978-03-07
US4714842A (en) 1987-12-22
JPS51112192A (en) 1976-10-04
AU474945B2 (en) 1976-08-05
JPS568867A (en) 1981-01-29
BR7203222D0 (pt) 1973-08-09
DE2266040C2 (zh) 1991-08-08
AT361042B (de) 1981-02-10
CH551694A (de) 1974-07-15
JPS5719580B2 (zh) 1982-04-23
JPS5732510B2 (zh) 1982-07-12
DE2266042C2 (zh) 1992-03-12
JPS5638858A (en) 1981-04-14
HK38678A (en) 1978-07-21
JPS5638857A (en) 1981-04-14
NO135614C (no) 1978-06-29
HK38978A (en) 1978-07-21
NL188608C (nl) 1992-08-03
JPS604593B2 (ja) 1985-02-05
NL8204877A (nl) 1983-04-05
HK38878A (en) 1978-07-21
NL188608B (nl) 1992-03-02
HK39078A (en) 1978-07-21
FR2138905B1 (zh) 1980-04-04
NL8204809A (nl) 1983-04-05
DE2224574C2 (zh) 1990-01-11
CA970473A (en) 1975-07-01
JPS5719582B2 (zh) 1982-04-23
FR2138905A1 (zh) 1973-01-05
NL187661C (nl) 1991-12-02
JPS604594B2 (ja) 1985-02-05
AR193989A1 (es) 1973-06-12
JPS5719581B2 (zh) 1982-04-23
JPS568866A (en) 1981-01-29
US4286177A (en) 1981-08-25
JPS5617056A (en) 1981-02-18
HK39178A (en) 1978-07-21
US4056810A (en) 1977-11-01
JPS5638854A (en) 1981-04-14
ES403026A1 (es) 1975-05-01
DK138198B (da) 1978-07-24

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