FR2337431A1 - Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention - Google Patents

Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention

Info

Publication number
FR2337431A1
FR2337431A1 FR7539964A FR7539964A FR2337431A1 FR 2337431 A1 FR2337431 A1 FR 2337431A1 FR 7539964 A FR7539964 A FR 7539964A FR 7539964 A FR7539964 A FR 7539964A FR 2337431 A1 FR2337431 A1 FR 2337431A1
Authority
FR
France
Prior art keywords
improvement
obtaining
integrated circuits
bipolar transistors
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7539964A
Other languages
English (en)
Other versions
FR2337431B1 (fr
Inventor
Michel De Brebisson
Jean-Michel Decrouen
Wolfgang Edlinger
Jean-Pierre Biet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7539964A priority Critical patent/FR2337431A1/fr
Priority to DE19762656962 priority patent/DE2656962A1/de
Priority to GB5406176A priority patent/GB1569180A/en
Priority to NL7614428A priority patent/NL7614428A/xx
Priority to JP16076676A priority patent/JPS5283081A/ja
Publication of FR2337431A1 publication Critical patent/FR2337431A1/fr
Priority to US05/887,646 priority patent/US4160989A/en
Application granted granted Critical
Publication of FR2337431B1 publication Critical patent/FR2337431B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
FR7539964A 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention Granted FR2337431A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7539964A FR2337431A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention
DE19762656962 DE2656962A1 (de) 1975-12-29 1976-12-16 Integrierte schaltung mit komplementaeren bipolaren transistoren
GB5406176A GB1569180A (en) 1975-12-29 1976-12-24 Integrated circuit and their manufacture
NL7614428A NL7614428A (nl) 1975-12-29 1976-12-27 Geintegreerde schakeling met komplementaire bipolaire transistoren.
JP16076676A JPS5283081A (en) 1975-12-29 1976-12-29 Semiconductor device and method of producing same
US05/887,646 US4160989A (en) 1975-12-29 1978-03-17 Integrated circuit having complementary bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539964A FR2337431A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention

Publications (2)

Publication Number Publication Date
FR2337431A1 true FR2337431A1 (fr) 1977-07-29
FR2337431B1 FR2337431B1 (fr) 1978-09-01

Family

ID=9164257

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7539964A Granted FR2337431A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires et procede d'obtention

Country Status (5)

Country Link
JP (1) JPS5283081A (fr)
DE (1) DE2656962A1 (fr)
FR (1) FR2337431A1 (fr)
GB (1) GB1569180A (fr)
NL (1) NL7614428A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4240195A (en) * 1978-09-15 1980-12-23 Bell Telephone Laboratories, Incorporated Dynamic random access memory
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (fr) * 1971-05-22 1972-11-24
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
DE2656962A1 (de) 1977-07-07
NL7614428A (nl) 1977-07-01
FR2337431B1 (fr) 1978-09-01
JPS5544462B2 (fr) 1980-11-12
GB1569180A (en) 1980-06-11
JPS5283081A (en) 1977-07-11

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Legal Events

Date Code Title Description
CA Change of address
CD Change of name or company name
ST Notification of lapse