NL192066C - Niet-vluchtige halfgeleidergeheugencel. - Google Patents
Niet-vluchtige halfgeleidergeheugencel. Download PDFInfo
- Publication number
- NL192066C NL192066C NL8902027A NL8902027A NL192066C NL 192066 C NL192066 C NL 192066C NL 8902027 A NL8902027 A NL 8902027A NL 8902027 A NL8902027 A NL 8902027A NL 192066 C NL192066 C NL 192066C
- Authority
- NL
- Netherlands
- Prior art keywords
- region
- memory cell
- control electrode
- substrate
- channel region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000002955 isolation Methods 0.000 claims description 4
- 230000010354 integration Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880015779A KR920001402B1 (ko) | 1988-11-29 | 1988-11-29 | 불휘발성 반도체 기억소자 |
| KR880015779 | 1988-11-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL8902027A NL8902027A (nl) | 1990-06-18 |
| NL192066B NL192066B (nl) | 1996-09-02 |
| NL192066C true NL192066C (nl) | 1997-01-07 |
Family
ID=19279692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8902027A NL192066C (nl) | 1988-11-29 | 1989-08-08 | Niet-vluchtige halfgeleidergeheugencel. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5019881A (ko) |
| JP (1) | JP2505286B2 (ko) |
| KR (1) | KR920001402B1 (ko) |
| DE (1) | DE3926474C2 (ko) |
| FR (1) | FR2639765B1 (ko) |
| GB (1) | GB2225485B (ko) |
| NL (1) | NL192066C (ko) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0136995B1 (ko) * | 1994-09-08 | 1998-04-24 | 김주용 | 비휘발성메모리셀의제조방법 |
| DE776049T1 (de) * | 1995-11-21 | 1998-03-05 | Programmable Microelectronics | Nichtflüchtige PMOS-Speicheranordnung mit einer einzigen Polysiliziumschicht |
| KR970053902A (ko) * | 1995-12-30 | 1997-07-31 | 김광호 | 공정시간 단축형 반도체 제조방법 |
| US6478800B1 (en) * | 2000-05-08 | 2002-11-12 | Depuy Acromed, Inc. | Medical installation tool |
| KR100391015B1 (ko) * | 2001-01-15 | 2003-07-12 | 황만택 | 지압 및 맛사지 효과 있는 배와 장(腸) 맛사지기 |
| KR100402635B1 (ko) * | 2001-03-07 | 2003-10-22 | 황만택 | 지압 및 맛사지 효과 잇는 배와 장(腸) 맛사지기 |
| KR100402634B1 (ko) * | 2001-03-07 | 2003-10-22 | 황만택 | 지압 및 맛사지 효과 잇는 배와 장(腸) 맛사지기 |
| DE10235072A1 (de) * | 2002-07-31 | 2004-02-26 | Micronas Gmbh | EEPROM-Struktur für Halbleiterspeicher |
| TWI312319B (en) | 2003-08-28 | 2009-07-21 | Toppan Forms Co Ltd | Audio message transfer sheet and manufacturing method thereof, audio information output sheet and audio information component |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
| DE2844878A1 (de) * | 1978-10-14 | 1980-04-30 | Itt Ind Gmbh Deutsche | Integrierbarer isolierschicht-feldeffekttransistor |
| US4334292A (en) * | 1980-05-27 | 1982-06-08 | International Business Machines Corp. | Low voltage electrically erasable programmable read only memory |
| JPS57141969A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Nonvolatile semiconductor memory |
| JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
| US4558344A (en) * | 1982-01-29 | 1985-12-10 | Seeq Technology, Inc. | Electrically-programmable and electrically-erasable MOS memory device |
| JPS59117270A (ja) * | 1982-12-24 | 1984-07-06 | Mitsubishi Electric Corp | 浮遊ゲ−ト型不揮発性ｍｏｓ半導体メモリ装置 |
| US4590504A (en) * | 1982-12-28 | 1986-05-20 | Thomson Components - Mostek Corporation | Nonvolatile MOS memory cell with tunneling element |
| FR2562707A1 (fr) * | 1984-04-06 | 1985-10-11 | Efcis | Point-memoire electriquement effacable et reprogrammable, comportant une grille flottante au-dessus d'une grille de commande |
| JPH0671070B2 (ja) * | 1984-07-11 | 1994-09-07 | 株式会社日立製作所 | 半導体記憶装置の製造方法 |
| JPS61136274A (ja) * | 1984-12-07 | 1986-06-24 | Toshiba Corp | 半導体装置 |
| JPS6232638A (ja) * | 1985-08-05 | 1987-02-12 | Nec Corp | 半導体記憶装置 |
| JPS6273774A (ja) * | 1985-09-27 | 1987-04-04 | Toshiba Corp | 半導体記憶装置の製造方法 |
| JPS62131582A (ja) * | 1985-11-26 | 1987-06-13 | モトロ−ラ・インコ−ポレ−テツド | 丸いエツジを有する分離した中間層キヤパシタ |
| JPS62155568A (ja) * | 1985-12-27 | 1987-07-10 | Nec Corp | 不揮発性半導体記憶装置 |
| JPS62193283A (ja) * | 1986-02-20 | 1987-08-25 | Toshiba Corp | 半導体記憶装置 |
| JPS62234375A (ja) * | 1986-04-04 | 1987-10-14 | Nec Corp | 不揮発性半導体記憶装置 |
| JPS6336576A (ja) * | 1986-07-30 | 1988-02-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| IT1198109B (it) * | 1986-11-18 | 1988-12-21 | Sgs Microelettronica Spa | Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel |
| US4894802A (en) * | 1988-02-02 | 1990-01-16 | Catalyst Semiconductor, Inc. | Nonvolatile memory cell for eeprom including a floating gate to drain tunnel area positioned away from the channel region to prevent trapping of electrons in the gate oxide during cell erase |
| US4845538A (en) * | 1988-02-05 | 1989-07-04 | Emanuel Hazani | E2 prom cell including isolated control diffusion |
-
1988
- 1988-11-29 KR KR1019880015779A patent/KR920001402B1/ko not_active IP Right Cessation
-
1989
- 1989-08-08 NL NL8902027A patent/NL192066C/nl not_active IP Right Cessation
- 1989-08-10 JP JP1205856A patent/JP2505286B2/ja not_active Expired - Lifetime
- 1989-08-10 DE DE3926474A patent/DE3926474C2/de not_active Expired - Lifetime
- 1989-08-10 US US07/391,865 patent/US5019881A/en not_active Expired - Lifetime
- 1989-08-10 GB GB8918307A patent/GB2225485B/en not_active Expired - Lifetime
- 1989-08-10 FR FR8910770A patent/FR2639765B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3926474C2 (de) | 1994-07-14 |
| DE3926474A1 (de) | 1990-05-31 |
| NL8902027A (nl) | 1990-06-18 |
| KR900008672A (ko) | 1990-06-03 |
| JPH02159071A (ja) | 1990-06-19 |
| US5019881A (en) | 1991-05-28 |
| NL192066B (nl) | 1996-09-02 |
| FR2639765B1 (fr) | 1994-05-06 |
| FR2639765A1 (fr) | 1990-06-01 |
| GB2225485B (en) | 1993-04-28 |
| JP2505286B2 (ja) | 1996-06-05 |
| GB8918307D0 (en) | 1989-09-20 |
| KR920001402B1 (ko) | 1992-02-13 |
| GB2225485A (en) | 1990-05-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20090808 |