NL1030789A1 - Polymeer voor immersielithografie, fotoresistsamenstelling dit bevat, werkwijze voor de bereiding van een halfgeleiderapparaat, en halfgeleiderapparaat. - Google Patents
Polymeer voor immersielithografie, fotoresistsamenstelling dit bevat, werkwijze voor de bereiding van een halfgeleiderapparaat, en halfgeleiderapparaat.Info
- Publication number
- NL1030789A1 NL1030789A1 NL1030789A NL1030789A NL1030789A1 NL 1030789 A1 NL1030789 A1 NL 1030789A1 NL 1030789 A NL1030789 A NL 1030789A NL 1030789 A NL1030789 A NL 1030789A NL 1030789 A1 NL1030789 A1 NL 1030789A1
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- polymer
- preparation
- composition containing
- photoresist composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050047323A KR100732300B1 (ko) | 2005-06-02 | 2005-06-02 | 이머젼 리소그래피용 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물 |
KR1020050047324A KR100733230B1 (ko) | 2005-06-02 | 2005-06-02 | 이머젼 리소그래피용 광산발생제 및 이를 함유하는포토레지스트 조성물 |
KR20050047324 | 2005-06-02 | ||
KR20050047323 | 2005-06-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1030789A1 true NL1030789A1 (nl) | 2006-12-05 |
NL1030789C2 NL1030789C2 (nl) | 2008-02-14 |
Family
ID=37402078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1030789A NL1030789C2 (nl) | 2005-06-02 | 2005-12-27 | Polymeer voor immersielithografie, fotoresistsamenstelling dit bevat, werkwijze voor de bereiding van een halfgeleiderapparaat, en halfgeleiderapparaat. |
Country Status (5)
Country | Link |
---|---|
US (2) | US7534548B2 (nl) |
JP (1) | JP4907977B2 (nl) |
DE (1) | DE102005060061A1 (nl) |
NL (1) | NL1030789C2 (nl) |
TW (1) | TWI309341B (nl) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
KR100574496B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부반사방지막 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
US7534548B2 (en) * | 2005-06-02 | 2009-05-19 | Hynix Semiconductor Inc. | Polymer for immersion lithography and photoresist composition |
KR100732301B1 (ko) * | 2005-06-02 | 2007-06-25 | 주식회사 하이닉스반도체 | 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법 |
WO2008029673A1 (fr) * | 2006-09-08 | 2008-03-13 | Jsr Corporation | Composition sensible au rayonnement et procédé de fabrication d'un composé de faible masse moléculaire destiné à être utilisé dans ladite composition |
US20090042148A1 (en) * | 2007-08-06 | 2009-02-12 | Munirathna Padmanaban | Photoresist Composition for Deep UV and Process Thereof |
EP2189844A3 (en) * | 2008-11-19 | 2010-07-28 | Rohm and Haas Electronic Materials LLC | Compositions comprising sulfonamide material and processes for photolithography |
KR102417180B1 (ko) * | 2017-09-29 | 2022-07-05 | 삼성전자주식회사 | Duv용 포토레지스트 조성물, 패턴 형성 방법 및 반도체 소자의 제조 방법 |
Family Cites Families (44)
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DE69027799T2 (de) * | 1989-03-14 | 1997-01-23 | Ibm | Chemisch amplifizierter Photolack |
JPH07140666A (ja) * | 1993-06-04 | 1995-06-02 | Internatl Business Mach Corp <Ibm> | マイクロリトグラフィックレジスト組成物、酸不安定化合物、マイクロリトグラフィックレリーフ画像形成方法及び酸感知性ポリマー組成物 |
KR0178332B1 (ko) * | 1996-02-06 | 1999-05-15 | 김은영 | 엔-캠퍼술폰일옥시말레이미드의 공중합체 및 그의 제조방법 |
US6576392B1 (en) * | 1996-12-07 | 2003-06-10 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
EP0855267B1 (en) * | 1997-01-24 | 2002-04-17 | Fuji Photo Film Co., Ltd. | Planographic printing plate |
JPH10221852A (ja) * | 1997-02-06 | 1998-08-21 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
EP1028353A1 (en) * | 1997-02-20 | 2000-08-16 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
US6048672A (en) | 1998-02-20 | 2000-04-11 | Shipley Company, L.L.C. | Photoresist compositions and methods and articles of manufacture comprising same |
KR100376983B1 (ko) * | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR100376984B1 (ko) | 1998-04-30 | 2003-07-16 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
US6280911B1 (en) * | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
US6984482B2 (en) | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
JP3955419B2 (ja) | 1999-10-20 | 2007-08-08 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2001290276A (ja) * | 1999-12-16 | 2001-10-19 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
KR100413756B1 (ko) | 2000-01-19 | 2003-12-31 | 삼성전자주식회사 | 알킬 비닐 에테르의 공중합체를 포함하는 감광성 폴리머및 이를 포함하는 레지스트 조성물 |
US6623907B2 (en) | 2000-02-04 | 2003-09-23 | Jsr Corporation | Radiation-sensitive resin composition |
KR100428884B1 (ko) | 2000-06-13 | 2004-04-28 | 에이에스엠엘 마스크툴즈 비.브이. | 가변치수를 갖는 세리프를 이용하는 광근접 보정방법 |
TW538056B (en) | 2000-07-11 | 2003-06-21 | Samsung Electronics Co Ltd | Resist composition comprising photosensitive polymer having lactone in its backbone |
KR20020009665A (ko) | 2000-07-26 | 2002-02-02 | 밍 루 | 디스크 브레이크의 가이드로드 결합구조 |
EP1179750B1 (en) * | 2000-08-08 | 2012-07-25 | FUJIFILM Corporation | Positive photosensitive composition and method for producing a precision integrated circuit element using the same |
EP1193558A3 (en) * | 2000-09-18 | 2002-08-14 | JSR Corporation | Radiation-sensitive resin composition |
JP2002169293A (ja) | 2000-12-05 | 2002-06-14 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
JP2002251011A (ja) * | 2001-02-23 | 2002-09-06 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US6811961B2 (en) | 2001-02-25 | 2004-11-02 | Shipley Company, L.L.C. | Photoacid generator systems for short wavelength imaging |
WO2002082185A1 (en) * | 2001-04-05 | 2002-10-17 | Arch Specialty Chemicals, Inc. | Perfluoroalkylsulfonic acid compounds for photoresists |
US6858371B2 (en) | 2001-04-13 | 2005-02-22 | Hynix Semiconductor Inc. | Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same |
JP3988517B2 (ja) | 2001-04-27 | 2007-10-10 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100557555B1 (ko) | 2001-06-21 | 2006-03-03 | 주식회사 하이닉스반도체 | 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체 |
KR100493015B1 (ko) | 2001-08-25 | 2005-06-07 | 삼성전자주식회사 | 감광성 폴리머 및 이를 포함하는 포토레지스트 조성물 |
WO2003045915A1 (fr) | 2001-11-30 | 2003-06-05 | Wako Pure Chemical Industries, Ltd. | Compose de bisimide, generateur d'acide et composition de reserve contenant ledit compose, procede de formation de motif au moyen de ladite composition |
WO2003077029A1 (en) * | 2002-03-04 | 2003-09-18 | Shipley Company, Llc | Negative photoresists for short wavelength imaging |
US20040024803A1 (en) | 2002-07-31 | 2004-02-05 | Allen Montijo | Cascaded modified PRBS counters form easily programmed and efficient large counter |
JP3912516B2 (ja) * | 2002-08-09 | 2007-05-09 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP4240202B2 (ja) * | 2003-02-10 | 2009-03-18 | 信越化学工業株式会社 | スルホン酸エステル基を有する高分子化合物、レジスト材料及びパターン形成方法 |
JP2004286845A (ja) * | 2003-03-19 | 2004-10-14 | Fuji Photo Film Co Ltd | 化学増幅型樹脂組成物 |
JP4530751B2 (ja) * | 2003-07-24 | 2010-08-25 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
EP1505439A3 (en) * | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
TWI366067B (en) * | 2003-09-10 | 2012-06-11 | Fujifilm Corp | Photosensitive composition and pattern forming method using the same |
US6864192B1 (en) | 2003-10-28 | 2005-03-08 | Intel Corporation | Langmuir-blodgett chemically amplified photoresist |
KR100574496B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 상부반사방지막 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
KR100637450B1 (ko) * | 2005-02-16 | 2006-10-23 | 한양대학교 산학협력단 | 플루오로알킬술폰늄염의 광산발생기가 치환된 화합물과 이를 중합한 공중합체 |
US7534548B2 (en) * | 2005-06-02 | 2009-05-19 | Hynix Semiconductor Inc. | Polymer for immersion lithography and photoresist composition |
KR101517179B1 (ko) | 2012-11-22 | 2015-05-04 | 임유섭 | 사용자의 펼침조작력 작용에 의해 회전하는 롤러를 갖는 플렉시블 표시장치 |
-
2005
- 2005-12-15 US US11/304,052 patent/US7534548B2/en active Active
- 2005-12-15 DE DE102005060061A patent/DE102005060061A1/de not_active Withdrawn
- 2005-12-21 JP JP2005368436A patent/JP4907977B2/ja not_active Expired - Fee Related
- 2005-12-27 NL NL1030789A patent/NL1030789C2/nl not_active IP Right Cessation
- 2005-12-27 TW TW094146712A patent/TWI309341B/zh not_active IP Right Cessation
-
2009
- 2009-04-08 US US12/420,698 patent/US7838201B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4907977B2 (ja) | 2012-04-04 |
NL1030789C2 (nl) | 2008-02-14 |
US20090191709A1 (en) | 2009-07-30 |
JP2006336005A (ja) | 2006-12-14 |
TWI309341B (en) | 2009-05-01 |
US20060275695A1 (en) | 2006-12-07 |
TW200643625A (en) | 2006-12-16 |
DE102005060061A1 (de) | 2006-12-07 |
US7838201B2 (en) | 2010-11-23 |
US7534548B2 (en) | 2009-05-19 |
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Legal Events
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---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20071213 |
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PD2B | A search report has been drawn up | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20140701 |