NL1026600A1 - Lithografie-inrichting. - Google Patents

Lithografie-inrichting.

Info

Publication number
NL1026600A1
NL1026600A1 NL1026600A NL1026600A NL1026600A1 NL 1026600 A1 NL1026600 A1 NL 1026600A1 NL 1026600 A NL1026600 A NL 1026600A NL 1026600 A NL1026600 A NL 1026600A NL 1026600 A1 NL1026600 A1 NL 1026600A1
Authority
NL
Netherlands
Prior art keywords
lithography device
lithography
Prior art date
Application number
NL1026600A
Other languages
English (en)
Other versions
NL1026600C2 (nl
Inventor
Yoo-Keun Won
Young-Hee Kim
Young-Ho Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL1026600A1 publication Critical patent/NL1026600A1/nl
Application granted granted Critical
Publication of NL1026600C2 publication Critical patent/NL1026600C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
NL1026600A 2003-07-10 2004-07-07 Lithografie-inrichting. NL1026600C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20030046798 2003-07-10
KR1020030046798A KR100598095B1 (ko) 2003-07-10 2003-07-10 노광 장치

Publications (2)

Publication Number Publication Date
NL1026600A1 true NL1026600A1 (nl) 2005-01-11
NL1026600C2 NL1026600C2 (nl) 2006-01-03

Family

ID=33562973

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1026600A NL1026600C2 (nl) 2003-07-10 2004-07-07 Lithografie-inrichting.

Country Status (3)

Country Link
US (1) US7196774B2 (nl)
KR (1) KR100598095B1 (nl)
NL (1) NL1026600C2 (nl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100606932B1 (ko) * 2004-06-24 2006-08-01 동부일렉트로닉스 주식회사 반도체 제조용 노광 장치 및 방법
US7369216B2 (en) * 2004-10-15 2008-05-06 Asml Netherlands B.V. Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
US7173688B2 (en) * 2004-12-28 2007-02-06 Asml Holding N.V. Method for calculating an intensity integral for use in lithography systems
KR100699111B1 (ko) * 2005-06-09 2007-03-22 동부일렉트로닉스 주식회사 노광용 빛 투과율 설정장치
KR100777588B1 (ko) * 2005-12-19 2007-11-16 동부일렉트로닉스 주식회사 반도체 제조용 노광 장비의 조명 장치
WO2008092653A2 (en) * 2007-01-30 2008-08-07 Carl Zeiss Smt Ag Illumination system of a microlithographic projection exposure apparatus
KR101501303B1 (ko) * 2007-08-10 2015-03-10 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 및 디바이스 제조 방법
CN107290938B (zh) * 2016-03-31 2019-05-31 上海微电子装备（集团）股份有限公司 一种用于光刻机曝光的快门装置及其使用方法
CN111263039B (zh) * 2020-01-19 2022-08-30 刘元哲 一种智能光学滤波器
JP2021139980A (ja) * 2020-03-03 2021-09-16 キオクシア株式会社 半導体製造装置および半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712698A (en) * 1996-03-04 1998-01-27 Siemens Aktiengesellschaft Independently controllable shutters and variable area apertures for off axis illumination
JP3620612B2 (ja) 1996-03-29 2005-02-16 株式会社ニコン 露光量制御装置
JPH10270345A (ja) 1997-03-24 1998-10-09 Nikon Corp 走査露光方法及び走査型露光装置
US6404499B1 (en) * 1998-04-21 2002-06-11 Asml Netherlands B.V. Lithography apparatus with filters for optimizing uniformity of an image
US6563567B1 (en) * 1998-12-17 2003-05-13 Nikon Corporation Method and apparatus for illuminating a surface using a projection imaging apparatus
US6396567B1 (en) * 1999-06-02 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for controlling the dose of radiations applied to a semiconductor wafer during photolithography
US6476905B1 (en) * 2000-01-20 2002-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Step and scan exposure system equipped with a plurality of attenuator blades for exposure control
KR20010085493A (ko) 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
EP1262836B1 (en) * 2001-06-01 2018-09-12 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4923370B2 (ja) 2001-09-18 2012-04-25 株式会社ニコン 照明光学系、露光装置、及びマイクロデバイスの製造方法
CN1461974A (zh) * 2002-05-31 2003-12-17 Asml荷兰有限公司 组装光学元件套件和方法，光学元件，平版印刷机和器件制造法

Also Published As

Publication number Publication date
US7196774B2 (en) 2007-03-27
NL1026600C2 (nl) 2006-01-03
KR100598095B1 (ko) 2006-07-07
KR20050006832A (ko) 2005-01-17
US20050006605A1 (en) 2005-01-13

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Legal Events

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20050830

PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20150801