NL1027187A1 - Een masker voor inspectie van een belichtingsinrichting, een werkwijze voor inspectie van een belichtingsinrichting, en een belichtingsinrichting. - Google Patents

Een masker voor inspectie van een belichtingsinrichting, een werkwijze voor inspectie van een belichtingsinrichting, en een belichtingsinrichting.

Info

Publication number
NL1027187A1
NL1027187A1 NL1027187A NL1027187A NL1027187A1 NL 1027187 A1 NL1027187 A1 NL 1027187A1 NL 1027187 A NL1027187 A NL 1027187A NL 1027187 A NL1027187 A NL 1027187A NL 1027187 A1 NL1027187 A1 NL 1027187A1
Authority
NL
Netherlands
Prior art keywords
exposure device
inspecting
mask
exposure
Prior art date
Application number
NL1027187A
Other languages
English (en)
Other versions
NL1027187C2 (nl
Inventor
Kazuya Fukuhara
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1027187A1 publication Critical patent/NL1027187A1/nl
Application granted granted Critical
Publication of NL1027187C2 publication Critical patent/NL1027187C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
NL1027187A 2003-10-07 2004-10-06 Een masker voor inspectie van een belichtingsinrichting, een werkwijze voor inspectie van een belichtingsinrichting, en een belichtingsinrichting. NL1027187C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003348132A JP3718511B2 (ja) 2003-10-07 2003-10-07 露光装置検査用マスク、露光装置検査方法及び露光装置
JP2003348132 2003-10-07

Publications (2)

Publication Number Publication Date
NL1027187A1 true NL1027187A1 (nl) 2005-04-08
NL1027187C2 NL1027187C2 (nl) 2008-02-12

Family

ID=34540418

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1027187A NL1027187C2 (nl) 2003-10-07 2004-10-06 Een masker voor inspectie van een belichtingsinrichting, een werkwijze voor inspectie van een belichtingsinrichting, en een belichtingsinrichting.

Country Status (4)

Country Link
US (1) US7072040B2 (nl)
JP (1) JP3718511B2 (nl)
CN (1) CN1267788C (nl)
NL (1) NL1027187C2 (nl)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
WO2005106593A2 (en) * 2004-04-14 2005-11-10 Litel Instruments Method and apparatus for measurement of exit pupil transmittance
US7619747B2 (en) 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device
US7697138B2 (en) * 2005-01-19 2010-04-13 Litel Instruments Method and apparatus for determination of source polarization matrix
US7375799B2 (en) * 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus
JP4580797B2 (ja) * 2005-03-28 2010-11-17 株式会社東芝 偏光状態検査方法及び半導体装置の製造方法
CN101253451B (zh) * 2005-06-13 2010-09-29 Asml荷兰有限公司 被动式掩模版工具、光刻设备以及在光刻工具中对器件图案化的方法
WO2007009535A1 (en) * 2005-06-13 2007-01-25 Asml Netherlands B.V. Active reticle tool and lithographic apparatus
WO2006137011A2 (en) * 2005-06-24 2006-12-28 Koninklijke Philips Electronics N.V. Methods and devices for characterizing polarization of illumination system
JP2007140212A (ja) * 2005-11-18 2007-06-07 Toshiba Corp フォトマスク及び半導体装置の製造方法
JP4928897B2 (ja) * 2005-12-01 2012-05-09 株式会社東芝 偏光評価マスク、偏光評価方法、及び偏光計測装置
US20080062385A1 (en) * 2006-04-07 2008-03-13 Asml Netherlands B.V. Method of monitoring polarization performance, polarization measurement assembly, lithographic apparatus and computer program product using the same
US20070264581A1 (en) * 2006-05-09 2007-11-15 Schwarz Christian J Patterning masks and methods
EP1857879A1 (en) 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG An illumination system and a photolithography apparatus
US7799486B2 (en) * 2006-11-21 2010-09-21 Infineon Technologies Ag Lithography masks and methods of manufacture thereof
NL1036069A1 (nl) * 2007-10-30 2009-05-07 Asml Netherlands Bv An Immersion Lithography Apparatus.
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP2010034478A (ja) * 2008-07-31 2010-02-12 Toshiba Corp 露光装置の管理方法、半導体装置の製造方法及びフォトマスク
JP5191851B2 (ja) * 2008-09-25 2013-05-08 株式会社東芝 偏光状態検査装置および偏光状態検査方法
US8368890B2 (en) * 2009-02-19 2013-02-05 International Business Machines Corporation Polarization monitoring reticle design for high numerical aperture lithography systems
KR101037899B1 (ko) * 2010-03-24 2011-05-30 한국기계연구원 리소그래피 장치 및 리소그래피 방법
CN102435418B (zh) * 2011-09-15 2013-08-21 中国科学院长春光学精密机械与物理研究所 ArF激光光学薄膜元件综合偏振测量装置及测量方法
DE102013200961A1 (de) * 2013-01-22 2014-07-24 Carl Zeiss Smt Gmbh Polarisationsmessvorrichtung für eine Projektionsbelichtungsanlage
US11131929B2 (en) * 2018-11-07 2021-09-28 Waymo Llc Systems and methods that utilize angled photolithography for manufacturing light guide elements
CN109596541A (zh) * 2018-11-07 2019-04-09 北京东方安杰科技有限公司 一种光源状态检测系统及其检测方法
JP7167999B2 (ja) * 2018-11-14 2022-11-09 株式会社村田製作所 測定装置及び測定装置を用いた投光システム
JP7336922B2 (ja) * 2019-09-03 2023-09-01 キヤノン株式会社 露光装置及び物品の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6344624A (ja) * 1986-08-12 1988-02-25 Fuji Photo Film Co Ltd 液晶デバイス
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
JP2836483B2 (ja) 1994-05-13 1998-12-14 日本電気株式会社 照明光学装置
US5973771A (en) * 1997-03-26 1999-10-26 International Business Machines Corporation Pupil imaging reticle for photo steppers
JP3302926B2 (ja) 1998-07-02 2002-07-15 株式会社東芝 露光装置の検査方法
US6048651A (en) 1998-10-23 2000-04-11 International Business Machines Corporation Fresnel zone mask for pupilgram
JP3302966B2 (ja) * 2000-02-15 2002-07-15 株式会社東芝 露光装置の検査方法及び露光装置検査用フォトマスク
JP2002139406A (ja) * 2000-11-06 2002-05-17 Nikon Corp 光学特性計測用マスク、光学特性計測方法、及び露光装置の製造方法
US6884552B2 (en) * 2001-11-09 2005-04-26 Kla-Tencor Technologies Corporation Focus masking structures, focus patterns and measurements thereof

Also Published As

Publication number Publication date
NL1027187C2 (nl) 2008-02-12
US20050099613A1 (en) 2005-05-12
CN1605934A (zh) 2005-04-13
JP2005116733A (ja) 2005-04-28
JP3718511B2 (ja) 2005-11-24
CN1267788C (zh) 2006-08-02
US7072040B2 (en) 2006-07-04

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20071010

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V1 Lapsed because of non-payment of the annual fee

Effective date: 20130501