NL1032675A1 - Bestralingswerkwijze en apparaat voor onderdompelingslithografie. - Google Patents

Bestralingswerkwijze en apparaat voor onderdompelingslithografie.

Info

Publication number
NL1032675A1
NL1032675A1 NL1032675A NL1032675A NL1032675A1 NL 1032675 A1 NL1032675 A1 NL 1032675A1 NL 1032675 A NL1032675 A NL 1032675A NL 1032675 A NL1032675 A NL 1032675A NL 1032675 A1 NL1032675 A1 NL 1032675A1
Authority
NL
Netherlands
Prior art keywords
immersion lithography
irradiation method
irradiation
lithography
immersion
Prior art date
Application number
NL1032675A
Other languages
English (en)
Other versions
NL1032675C2 (nl
Inventor
Ching-Yu Chang
Chin-Hsiang Lin
Burn-Jeng Lin
Ding-Chung Lu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1032675A1 publication Critical patent/NL1032675A1/nl
Application granted granted Critical
Publication of NL1032675C2 publication Critical patent/NL1032675C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1032675A 2005-10-14 2006-10-13 Bestralingswerkwijze en apparaat voor onderdompelingslithografie. NL1032675C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25133005 2005-10-14
US11/251,330 US7420188B2 (en) 2005-10-14 2005-10-14 Exposure method and apparatus for immersion lithography

Publications (2)

Publication Number Publication Date
NL1032675A1 true NL1032675A1 (nl) 2007-04-17
NL1032675C2 NL1032675C2 (nl) 2008-05-27

Family

ID=37947309

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1032675A NL1032675C2 (nl) 2005-10-14 2006-10-13 Bestralingswerkwijze en apparaat voor onderdompelingslithografie.

Country Status (6)

Country Link
US (1) US7420188B2 (nl)
JP (1) JP4642726B2 (nl)
KR (1) KR100823633B1 (nl)
CN (1) CN1949082B (nl)
NL (1) NL1032675C2 (nl)
TW (1) TWI348077B (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101466533B1 (ko) 2005-04-25 2014-11-27 가부시키가이샤 니콘 노광 방법, 노광 장치 및 액체 공급 방법
NL1036187A1 (nl) * 2007-12-03 2009-06-04 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5482784B2 (ja) 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2011155529A1 (ja) * 2010-06-10 2011-12-15 株式会社ニコン 計測部材、ステージ装置、露光装置、露光方法、及びデバイス製造方法
US8937703B2 (en) * 2010-07-14 2015-01-20 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
JP5740287B2 (ja) * 2011-11-09 2015-06-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
CN104181776B (zh) * 2014-07-28 2016-04-13 浙江大学 浸没式光刻机流体控制系统的模块化工作流程控制方法
US9588446B2 (en) 2015-05-29 2017-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Calibration apparatus and an adjustment method for a lithography apparatus
CN109690406A (zh) * 2016-09-09 2019-04-26 Asml控股股份有限公司 光刻设备和支撑结构背景
US10418316B1 (en) 2018-04-04 2019-09-17 Advanced Semiconductor Engineering, Inc. Semiconductor substrate, semiconductor package structure and method of manufacturing a semiconductor device
CN110231725B (zh) * 2019-05-20 2022-03-08 深圳市华星光电半导体显示技术有限公司 一种微影玻璃薄化的方法及其控制系统
CN114730135A (zh) * 2019-11-14 2022-07-08 Asml荷兰有限公司 衬底支撑装置、光刻设备、用于操纵电荷分布的方法以及用于制备衬底的方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6507474B1 (en) * 2000-06-19 2003-01-14 Advanced Micro Devices, Inc. Using localized ionizer to reduce electrostatic charge from wafer and mask
JP2005101498A (ja) * 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101319108B1 (ko) * 2003-09-29 2013-10-17 가부시키가이샤 니콘 투영 노광 장치, 투영 노광 방법 및 디바이스 제조 방법
JP4323946B2 (ja) * 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7327439B2 (en) * 2004-11-16 2008-02-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1826813A4 (en) * 2004-12-01 2009-05-13 Nikon Corp STAGE DEVICE AND EXPOSURE APPAEIL
US8859188B2 (en) * 2005-02-10 2014-10-14 Asml Netherlands B.V. Immersion liquid, exposure apparatus, and exposure process
US7291569B2 (en) * 2005-06-29 2007-11-06 Infineon Technologies Ag Fluids for immersion lithography systems

Also Published As

Publication number Publication date
TWI348077B (en) 2011-09-01
JP4642726B2 (ja) 2011-03-02
CN1949082A (zh) 2007-04-18
TW200715070A (en) 2007-04-16
US20070085034A1 (en) 2007-04-19
KR20070041352A (ko) 2007-04-18
KR100823633B1 (ko) 2008-04-21
US7420188B2 (en) 2008-09-02
CN1949082B (zh) 2012-03-28
JP2007165852A (ja) 2007-06-28
NL1032675C2 (nl) 2008-05-27

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Effective date: 20080125

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