NL1030699A1 - Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen. - Google Patents

Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen.

Info

Publication number
NL1030699A1
NL1030699A1 NL1030699A NL1030699A NL1030699A1 NL 1030699 A1 NL1030699 A1 NL 1030699A1 NL 1030699 A NL1030699 A NL 1030699A NL 1030699 A NL1030699 A NL 1030699A NL 1030699 A1 NL1030699 A1 NL 1030699A1
Authority
NL
Netherlands
Prior art keywords
exposure
semiconductor device
manufacturing semiconductor
exposure system
exposure method
Prior art date
Application number
NL1030699A
Other languages
English (en)
Other versions
NL1030699C2 (nl
Inventor
Kazuya Fukuhara
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1030699A1 publication Critical patent/NL1030699A1/nl
Application granted granted Critical
Publication of NL1030699C2 publication Critical patent/NL1030699C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1030699A 2004-12-20 2005-12-19 Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen. NL1030699C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004368098A JP2006179516A (ja) 2004-12-20 2004-12-20 露光装置、露光方法及び半導体装置の製造方法
JP2004368098 2004-12-20

Publications (2)

Publication Number Publication Date
NL1030699A1 true NL1030699A1 (nl) 2006-06-21
NL1030699C2 NL1030699C2 (nl) 2008-01-03

Family

ID=36595243

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1030699A NL1030699C2 (nl) 2004-12-20 2005-12-19 Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen.

Country Status (3)

Country Link
US (1) US7436491B2 (nl)
JP (1) JP2006179516A (nl)
NL (1) NL1030699C2 (nl)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1857880B1 (en) * 2003-04-09 2015-09-16 Nikon Corporation Exposure method and apparatus and device manufacturing method
TWI360158B (en) 2003-10-28 2012-03-11 Nikon Corp Projection exposure device,exposure method and dev
TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
KR101230757B1 (ko) 2004-01-16 2013-02-06 칼 짜이스 에스엠티 게엠베하 편광변조 광학소자
US20070019179A1 (en) 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
TWI395068B (zh) 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
TWI423301B (zh) * 2005-01-21 2014-01-11 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP2007103835A (ja) * 2005-10-07 2007-04-19 Toshiba Corp 露光装置及び露光方法
JP5103901B2 (ja) 2006-01-27 2012-12-19 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2008108851A (ja) * 2006-10-24 2008-05-08 Canon Inc 照明装置及び当該照明装置を有する露光装置、並びに、デバイス製造方法
JP5126646B2 (ja) * 2006-11-10 2013-01-23 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
US7704565B2 (en) * 2006-11-22 2010-04-27 The Boeing Company Method of making a layered component with vector discrimination in a variable deposition rate process
US7947412B2 (en) * 2007-03-29 2011-05-24 Micron Technology, Inc. Reduced lens heating methods, apparatus, and systems
US8501395B2 (en) * 2007-06-04 2013-08-06 Applied Materials, Inc. Line edge roughness reduction and double patterning
JP2010034478A (ja) * 2008-07-31 2010-02-12 Toshiba Corp 露光装置の管理方法、半導体装置の製造方法及びフォトマスク
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP5259661B2 (ja) * 2010-09-07 2013-08-07 株式会社東芝 パターン形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) * 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
JP3958163B2 (ja) * 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
JP3997199B2 (ja) * 2002-12-10 2007-10-24 キヤノン株式会社 露光方法及び装置
EP1467253A1 (en) * 2003-04-07 2004-10-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1857880B1 (en) * 2003-04-09 2015-09-16 Nikon Corporation Exposure method and apparatus and device manufacturing method
US6842223B2 (en) * 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US20050007473A1 (en) * 2003-07-08 2005-01-13 Theil Jeremy A. Reducing image sensor lag
JP4323903B2 (ja) 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置

Also Published As

Publication number Publication date
US20060132748A1 (en) 2006-06-22
US7436491B2 (en) 2008-10-14
NL1030699C2 (nl) 2008-01-03
JP2006179516A (ja) 2006-07-06

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RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)
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V1 Lapsed because of non-payment of the annual fee

Effective date: 20130701