NL1030699A1 - Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen. - Google Patents
Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen.Info
- Publication number
- NL1030699A1 NL1030699A1 NL1030699A NL1030699A NL1030699A1 NL 1030699 A1 NL1030699 A1 NL 1030699A1 NL 1030699 A NL1030699 A NL 1030699A NL 1030699 A NL1030699 A NL 1030699A NL 1030699 A1 NL1030699 A1 NL 1030699A1
- Authority
- NL
- Netherlands
- Prior art keywords
- exposure
- semiconductor device
- manufacturing semiconductor
- exposure system
- exposure method
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/701—Off-axis setting using an aperture
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004368098A JP2006179516A (ja) | 2004-12-20 | 2004-12-20 | 露光装置、露光方法及び半導体装置の製造方法 |
JP2004368098 | 2004-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1030699A1 true NL1030699A1 (nl) | 2006-06-21 |
NL1030699C2 NL1030699C2 (nl) | 2008-01-03 |
Family
ID=36595243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1030699A NL1030699C2 (nl) | 2004-12-20 | 2005-12-19 | Blootstellingssysteem, de blootstellingswerkwijze en werkwijze om halfgeleiderinrichting te vervaardigen. |
Country Status (3)
Country | Link |
---|---|
US (1) | US7436491B2 (nl) |
JP (1) | JP2006179516A (nl) |
NL (1) | NL1030699C2 (nl) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1857880B1 (en) * | 2003-04-09 | 2015-09-16 | Nikon Corporation | Exposure method and apparatus and device manufacturing method |
TWI360158B (en) | 2003-10-28 | 2012-03-11 | Nikon Corp | Projection exposure device,exposure method and dev |
TW201809801A (zh) | 2003-11-20 | 2018-03-16 | 日商尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法 |
KR101230757B1 (ko) | 2004-01-16 | 2013-02-06 | 칼 짜이스 에스엠티 게엠베하 | 편광변조 광학소자 |
US20070019179A1 (en) | 2004-01-16 | 2007-01-25 | Damian Fiolka | Polarization-modulating optical element |
US8270077B2 (en) | 2004-01-16 | 2012-09-18 | Carl Zeiss Smt Gmbh | Polarization-modulating optical element |
TWI395068B (zh) | 2004-01-27 | 2013-05-01 | 尼康股份有限公司 | 光學系統、曝光裝置以及曝光方法 |
TWI505329B (zh) | 2004-02-06 | 2015-10-21 | 尼康股份有限公司 | 光學照明裝置、曝光裝置、曝光方法以及元件製造方法 |
US7324280B2 (en) | 2004-05-25 | 2008-01-29 | Asml Holding N.V. | Apparatus for providing a pattern of polarization |
TWI423301B (zh) * | 2005-01-21 | 2014-01-11 | 尼康股份有限公司 | 照明光學裝置、曝光裝置、曝光方法以及元件製造方法 |
JP2007103835A (ja) * | 2005-10-07 | 2007-04-19 | Toshiba Corp | 露光装置及び露光方法 |
JP5103901B2 (ja) | 2006-01-27 | 2012-12-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2008108851A (ja) * | 2006-10-24 | 2008-05-08 | Canon Inc | 照明装置及び当該照明装置を有する露光装置、並びに、デバイス製造方法 |
JP5126646B2 (ja) * | 2006-11-10 | 2013-01-23 | 株式会社ニコン | 露光方法及び装置、並びにデバイス製造方法 |
US7704565B2 (en) * | 2006-11-22 | 2010-04-27 | The Boeing Company | Method of making a layered component with vector discrimination in a variable deposition rate process |
US7947412B2 (en) * | 2007-03-29 | 2011-05-24 | Micron Technology, Inc. | Reduced lens heating methods, apparatus, and systems |
US8501395B2 (en) * | 2007-06-04 | 2013-08-06 | Applied Materials, Inc. | Line edge roughness reduction and double patterning |
JP2010034478A (ja) * | 2008-07-31 | 2010-02-12 | Toshiba Corp | 露光装置の管理方法、半導体装置の製造方法及びフォトマスク |
US20110037962A1 (en) * | 2009-08-17 | 2011-02-17 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
US20110205519A1 (en) * | 2010-02-25 | 2011-08-25 | Nikon Corporation | Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method |
JP5259661B2 (ja) * | 2010-09-07 | 2013-08-07 | 株式会社東芝 | パターン形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465220A (en) * | 1992-06-02 | 1995-11-07 | Fujitsu Limited | Optical exposure method |
JP3210123B2 (ja) * | 1992-03-27 | 2001-09-17 | キヤノン株式会社 | 結像方法及び該方法を用いたデバイス製造方法 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
US5459000A (en) * | 1992-10-14 | 1995-10-17 | Canon Kabushiki Kaisha | Image projection method and device manufacturing method using the image projection method |
US5815247A (en) * | 1995-09-21 | 1998-09-29 | Siemens Aktiengesellschaft | Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures |
JP3958163B2 (ja) * | 2002-09-19 | 2007-08-15 | キヤノン株式会社 | 露光方法 |
JP3997199B2 (ja) * | 2002-12-10 | 2007-10-24 | キヤノン株式会社 | 露光方法及び装置 |
EP1467253A1 (en) * | 2003-04-07 | 2004-10-13 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1857880B1 (en) * | 2003-04-09 | 2015-09-16 | Nikon Corporation | Exposure method and apparatus and device manufacturing method |
US6842223B2 (en) * | 2003-04-11 | 2005-01-11 | Nikon Precision Inc. | Enhanced illuminator for use in photolithographic systems |
US20050007473A1 (en) * | 2003-07-08 | 2005-01-13 | Theil Jeremy A. | Reducing image sensor lag |
JP4323903B2 (ja) | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | 照明光学系及びそれを用いた露光装置 |
-
2004
- 2004-12-20 JP JP2004368098A patent/JP2006179516A/ja active Pending
-
2005
- 2005-12-12 US US11/298,706 patent/US7436491B2/en not_active Expired - Fee Related
- 2005-12-19 NL NL1030699A patent/NL1030699C2/nl not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20060132748A1 (en) | 2006-06-22 |
US7436491B2 (en) | 2008-10-14 |
NL1030699C2 (nl) | 2008-01-03 |
JP2006179516A (ja) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) | ||
PD2B | A search report has been drawn up | ||
V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20130701 |