NL2000103A1 - Systeem en werkwijze voor de fotolithografie bij vervaardiging van halfgeleiders. - Google Patents
Systeem en werkwijze voor de fotolithografie bij vervaardiging van halfgeleiders.Info
- Publication number
- NL2000103A1 NL2000103A1 NL2000103A NL2000103A NL2000103A1 NL 2000103 A1 NL2000103 A1 NL 2000103A1 NL 2000103 A NL2000103 A NL 2000103A NL 2000103 A NL2000103 A NL 2000103A NL 2000103 A1 NL2000103 A1 NL 2000103A1
- Authority
- NL
- Netherlands
- Prior art keywords
- photolithography
- semiconductor manufacture
- semiconductor
- manufacture
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000000206 photolithography Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/216,658 US7501227B2 (en) | 2005-08-31 | 2005-08-31 | System and method for photolithography in semiconductor manufacturing |
US21665805 | 2005-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL2000103A1 true NL2000103A1 (nl) | 2007-03-01 |
NL2000103C2 NL2000103C2 (nl) | 2007-08-07 |
Family
ID=36698816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL2000103A NL2000103C2 (nl) | 2005-08-31 | 2006-06-15 | Systeem en werkwijze voor de fotolithografie bij vervaardiging van halfgeleiders. |
Country Status (10)
Country | Link |
---|---|
US (2) | US7501227B2 (nl) |
JP (1) | JP2007067376A (nl) |
KR (1) | KR100747625B1 (nl) |
CN (2) | CN1924706A (nl) |
DE (2) | DE102006015722B4 (nl) |
FR (1) | FR2891066B1 (nl) |
IL (1) | IL174923A (nl) |
NL (1) | NL2000103C2 (nl) |
SG (1) | SG130083A1 (nl) |
TW (1) | TWI311339B (nl) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7501227B2 (en) * | 2005-08-31 | 2009-03-10 | Taiwan Semiconductor Manufacturing Company | System and method for photolithography in semiconductor manufacturing |
JP4837971B2 (ja) * | 2005-10-07 | 2011-12-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7803516B2 (en) * | 2005-11-21 | 2010-09-28 | Nikon Corporation | Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus |
KR100827506B1 (ko) * | 2006-05-11 | 2008-05-06 | 주식회사 하이닉스반도체 | 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법 |
US8346872B2 (en) * | 2006-06-30 | 2013-01-01 | The Invention Science Fund I, Llc | Context parameters and identifiers for communication |
JP4357514B2 (ja) * | 2006-09-29 | 2009-11-04 | 株式会社東芝 | 液浸露光方法 |
US8139199B2 (en) * | 2007-04-02 | 2012-03-20 | Nikon Corporation | Exposure method, exposure apparatus, light converging pattern formation member, mask, and device manufacturing method |
KR100961204B1 (ko) | 2008-06-18 | 2010-06-09 | 주식회사 하이닉스반도체 | 혼합 보조 패턴을 이용한 반도체 소자의 패턴 형성 방법 |
US8728722B2 (en) * | 2010-09-30 | 2014-05-20 | Truesense Imaging, Inc. | Stitching methods using multiple microlithographic expose tools |
US8728945B2 (en) * | 2010-11-03 | 2014-05-20 | Texas Instruments Incorporated | Method for patterning sublithographic features |
KR20140029050A (ko) * | 2012-08-31 | 2014-03-10 | 삼성전자주식회사 | 패턴 형성 방법 |
US9097975B2 (en) | 2012-09-14 | 2015-08-04 | Macronix International Co., Ltd. | Double patterning by PTD and NTD process |
US8835100B2 (en) * | 2012-09-14 | 2014-09-16 | Macronix International Co., Ltd. | Double patterning by PTD and NTD process |
US9274413B2 (en) | 2013-09-11 | 2016-03-01 | United Microelectronics Corp. | Method for forming layout pattern |
CN110231725B (zh) * | 2019-05-20 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | 一种微影玻璃薄化的方法及其控制系统 |
Family Cites Families (27)
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JPH0582414A (ja) * | 1991-09-24 | 1993-04-02 | Nec Kyushu Ltd | 縮小投影露光装置 |
WO1994024610A1 (en) | 1993-04-13 | 1994-10-27 | Astarix, Inc. | High resolution mask programmable via selected by low resolution photomasking |
JP3015224B2 (ja) * | 1993-05-26 | 2000-03-06 | キヤノン株式会社 | 露光方法 |
JP2993320B2 (ja) * | 1993-05-27 | 1999-12-20 | キヤノン株式会社 | 露光装置及びそれを用いた半導体素子の製造方法 |
JPH07211619A (ja) * | 1994-01-25 | 1995-08-11 | Hitachi Ltd | 回路パターンの形成方法及びそれに用いられるレチクル |
JP3492846B2 (ja) * | 1996-04-26 | 2004-02-03 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11133585A (ja) * | 1997-10-30 | 1999-05-21 | Nec Corp | 露光用マスク及びその製造方法 |
US6080533A (en) * | 1998-03-10 | 2000-06-27 | Clear Logic, Inc. | Method of patterning photoresist using precision and non-precision techniques |
JPH11327121A (ja) | 1998-05-20 | 1999-11-26 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスクの製造方法およびハーフトーン型位相シフトマスクのブランク |
JP2000021749A (ja) * | 1998-06-30 | 2000-01-21 | Canon Inc | 露光方法および露光装置 |
US6664011B2 (en) | 2001-12-05 | 2003-12-16 | Taiwan Semiconductor Manufacturing Company | Hole printing by packing and unpacking using alternating phase-shifting masks |
US6839126B2 (en) * | 2002-01-03 | 2005-01-04 | United Microelectronics Corp. | Photolithography process with multiple exposures |
US6894762B1 (en) | 2002-09-17 | 2005-05-17 | Lsi Logic Corporation | Dual source lithography for direct write application |
KR100523839B1 (ko) * | 2002-10-07 | 2005-10-27 | 한국전자통신연구원 | 건식 리소그라피 방법 및 이를 이용한 게이트 패턴 형성방법 |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
EP1571697A4 (en) * | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
JP2004294977A (ja) * | 2003-03-28 | 2004-10-21 | Nikon Corp | パターン作成方法及びパターン作成システム、マスク製造方法及びマスク製造システム、マスク、露光方法及び露光装置、並びにデバイス製造方法 |
JP4305095B2 (ja) | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
JP4540327B2 (ja) * | 2003-11-06 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | フォトマスクのパターン形成方法 |
JP2005191381A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
JP4625673B2 (ja) * | 2004-10-15 | 2011-02-02 | 株式会社東芝 | 露光方法及び露光装置 |
JP3976046B2 (ja) * | 2004-11-11 | 2007-09-12 | ソニー株式会社 | 露光装置および半導体装置の製造装置、位相シフトマスクおよび設計方法 |
US7501227B2 (en) * | 2005-08-31 | 2009-03-10 | Taiwan Semiconductor Manufacturing Company | System and method for photolithography in semiconductor manufacturing |
-
2005
- 2005-08-31 US US11/216,658 patent/US7501227B2/en active Active
-
2006
- 2006-03-07 SG SG200601548-1A patent/SG130083A1/en unknown
- 2006-04-04 DE DE102006015722.2A patent/DE102006015722B4/de active Active
- 2006-04-04 DE DE102006062993.0A patent/DE102006062993B3/de active Active
- 2006-04-11 IL IL174923A patent/IL174923A/en active IP Right Grant
- 2006-05-18 TW TW095117711A patent/TWI311339B/zh not_active IP Right Cessation
- 2006-05-29 KR KR1020060048012A patent/KR100747625B1/ko active IP Right Grant
- 2006-06-15 NL NL2000103A patent/NL2000103C2/nl active Search and Examination
- 2006-06-27 FR FR0605792A patent/FR2891066B1/fr active Active
- 2006-07-03 JP JP2006183322A patent/JP2007067376A/ja active Pending
- 2006-08-11 CN CNA2006101121367A patent/CN1924706A/zh active Pending
- 2006-08-11 CN CN2013102258795A patent/CN103345120A/zh active Pending
-
2009
- 2009-01-29 US US12/362,316 patent/US8178289B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8178289B2 (en) | 2012-05-15 |
KR100747625B1 (ko) | 2007-08-08 |
DE102006015722B4 (de) | 2020-05-14 |
JP2007067376A (ja) | 2007-03-15 |
IL174923A0 (en) | 2006-10-05 |
KR20070025954A (ko) | 2007-03-08 |
DE102006015722A1 (de) | 2007-03-22 |
TW200709276A (en) | 2007-03-01 |
TWI311339B (en) | 2009-06-21 |
IL174923A (en) | 2011-06-30 |
FR2891066B1 (fr) | 2018-02-02 |
US20090136876A1 (en) | 2009-05-28 |
CN1924706A (zh) | 2007-03-07 |
NL2000103C2 (nl) | 2007-08-07 |
SG130083A1 (en) | 2007-03-20 |
CN103345120A (zh) | 2013-10-09 |
DE102006062993B3 (de) | 2021-03-11 |
US7501227B2 (en) | 2009-03-10 |
US20070048678A1 (en) | 2007-03-01 |
FR2891066A1 (fr) | 2007-03-23 |
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Legal Events
Date | Code | Title | Description |
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AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20070605 |
|
PD2B | A search report has been drawn up |