NL1034483A1 - Systeem en werkwijze voor verbeteren van immersiescanner-overlayprestatievermogen. - Google Patents

Systeem en werkwijze voor verbeteren van immersiescanner-overlayprestatievermogen.

Info

Publication number
NL1034483A1
NL1034483A1 NL1034483A NL1034483A NL1034483A1 NL 1034483 A1 NL1034483 A1 NL 1034483A1 NL 1034483 A NL1034483 A NL 1034483A NL 1034483 A NL1034483 A NL 1034483A NL 1034483 A1 NL1034483 A1 NL 1034483A1
Authority
NL
Netherlands
Prior art keywords
immersion scanner
overlay performance
scanner overlay
improving immersion
improving
Prior art date
Application number
NL1034483A
Other languages
English (en)
Other versions
NL1034483C2 (nl
Inventor
Jui-Chun Peng
Tzung-Chi Fu
Chin-Hsiang Lin
Chien-Hsun Lin
Chun-Hung Lin
Yao-Wen Guo
Shy-Jay Lin
Heng-Hsin Liu
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL1034483A1 publication Critical patent/NL1034483A1/nl
Application granted granted Critical
Publication of NL1034483C2 publication Critical patent/NL1034483C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
NL1034483A 2006-12-01 2007-10-05 Systeem en werkwijze voor verbeteren van immersiescanner-overlayprestatievermogen. NL1034483C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US86819106P 2006-12-01 2006-12-01
US86819106 2006-12-01
US67794907 2007-02-22
US11/677,949 US8068208B2 (en) 2006-12-01 2007-02-22 System and method for improving immersion scanner overlay performance

Publications (2)

Publication Number Publication Date
NL1034483A1 true NL1034483A1 (nl) 2008-06-03
NL1034483C2 NL1034483C2 (nl) 2009-10-20

Family

ID=39363328

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1034483A NL1034483C2 (nl) 2006-12-01 2007-10-05 Systeem en werkwijze voor verbeteren van immersiescanner-overlayprestatievermogen.

Country Status (4)

Country Link
US (2) US8068208B2 (nl)
DE (1) DE102007044633B4 (nl)
NL (1) NL1034483C2 (nl)
TW (1) TWI456353B (nl)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI541615B (zh) 2007-07-13 2016-07-11 瑪波微影Ｉｐ公司 在微影裝置中交換晶圓的方法
NL2005874A (en) 2010-01-22 2011-07-25 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
JP6367382B2 (ja) 2014-06-19 2018-08-01 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、対象物位置決めシステムおよびデバイス製造方法
EP3213149B1 (en) * 2014-10-28 2018-07-25 ASML Netherlands B.V. Substrate table, lithography apparatus, inspection tool and a method of manufacturing a device
US9793183B1 (en) 2016-07-29 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measuring and improving overlay using electronic microscopic imaging and digital processing
US10043650B2 (en) 2016-09-22 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for wet chemical bath process
US10522385B2 (en) 2017-09-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer table with dynamic support pins
US11054742B2 (en) 2018-06-15 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metallic resist performance enhancement via additives
US11069526B2 (en) 2018-06-27 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Using a self-assembly layer to facilitate selective formation of an etching stop layer
US10867805B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Selective removal of an etching stop layer for improving overlay shift tolerance
KR20210023102A (ko) 2019-08-22 2021-03-04 (주)아모레퍼시픽 눈썹 또는 속눈썹 성장 촉진용 조성물
JP2024515487A (ja) * 2021-04-21 2024-04-10 エーエスエムエル ネザーランズ ビー．ブイ． 温度調節システム、リソグラフィ装置及びオブジェクトを温度調節するための方法
EP4102297A1 (en) * 2021-06-10 2022-12-14 ASML Netherlands B.V. Temperature conditioning system, a lithographic apparatus and a method of temperature conditioning an object

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US4000626A (en) * 1975-02-27 1977-01-04 Webber Robert C Liquid convection fluid heat exchanger for refrigeration circuit
JPH01152639A (ja) * 1987-12-10 1989-06-15 Canon Inc 吸着保持装置
DE68922061T2 (de) * 1988-10-03 1995-08-31 Canon Kk Vorrichtung zum Regeln der Temperatur.
US5435379A (en) * 1992-08-14 1995-07-25 Texas Instruments Incorporated Method and apparatus for low-temperature semiconductor processing
JP3475973B2 (ja) 1994-12-14 2003-12-10 株式会社ニコン リニアモータ、ステージ装置、及び露光装置
JP3276553B2 (ja) * 1995-01-19 2002-04-22 東京エレクトロン株式会社 処理装置及び処理方法
US5885134A (en) * 1996-04-18 1999-03-23 Ebara Corporation Polishing apparatus
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JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
TWI284785B (en) * 2002-04-24 2007-08-01 Nikon Corp Exposure system and device manufacturing method
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EP2261741A3 (en) 2003-06-11 2011-05-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005024517A2 (en) * 2003-09-03 2005-03-17 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4492539B2 (ja) * 2003-09-29 2010-06-30 株式会社ニコン 液浸型光学系及び投影露光装置、並びにデバイス製造方法
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JP4843503B2 (ja) * 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
KR101942136B1 (ko) * 2004-02-04 2019-01-24 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
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US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US7667822B2 (en) * 2006-02-14 2010-02-23 Asml Netherlands B.V. Lithographic apparatus and stage apparatus
US7602471B2 (en) * 2006-05-17 2009-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for particle monitoring in immersion lithography
US7804582B2 (en) * 2006-07-28 2010-09-28 Asml Netherlands B.V. Lithographic apparatus, method of calibrating a lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
TW200825633A (en) 2008-06-16
US20120045192A1 (en) 2012-02-23
TWI456353B (zh) 2014-10-11
US20080129969A1 (en) 2008-06-05
DE102007044633A1 (de) 2008-06-12
US8199314B2 (en) 2012-06-12
NL1034483C2 (nl) 2009-10-20
US8068208B2 (en) 2011-11-29
DE102007044633B4 (de) 2014-01-09

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Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20090618

PD2B A search report has been drawn up