MX165273B - Un metodo de fabricacion para formar una ventana de contacto de alineamiento automatico y su conexion en una capa epitaxial y las estructuras del dispositivo que emplean el metodo - Google Patents

Un metodo de fabricacion para formar una ventana de contacto de alineamiento automatico y su conexion en una capa epitaxial y las estructuras del dispositivo que emplean el metodo

Info

Publication number
MX165273B
MX165273B MX008675A MX867587A MX165273B MX 165273 B MX165273 B MX 165273B MX 008675 A MX008675 A MX 008675A MX 867587 A MX867587 A MX 867587A MX 165273 B MX165273 B MX 165273B
Authority
MX
Mexico
Prior art keywords
epitaxial layer
contact window
connection
device structures
self
Prior art date
Application number
MX008675A
Other languages
English (en)
Inventor
Nicky Chau-Chun Lu
Brian John Machesney
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of MX165273B publication Critical patent/MX165273B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor

Abstract

La presente invención se refiere a un método de fabricación para formar una capa de material epitaxial sobre un substrato monocristalina y sobre una región de una capa aislante para producir una ventana de contacto de alineamiento propio a través de la región del material aislante, el cual comprende los pasos de: A. dejar crecer una capa del material aislante sobre una región predeterminada de la superficie de un substrato monocristalino, B. dejar crecer una capa de material epitaxial sobre el substrato monocristalino y lateralmente sobre la región del material aislante en una dirección de crecimiento hacia el centro de la región aislante, C. detener el crecimiento de la capa de material epitaxial cuando una región expuesta del área deseada permanece en el centro de la región del material aislante, por lo cual los lados de la capa del material epitaxial que rodean la región expuesta del área de material aislante constituyen una ventana para el material aislante expuesto, y D. utilizar la ventana de la capa epitaxial como una máscara de cauterización para quitar así la región expuesta de material aislante a fin de producir una abertura en la región expuesta del material aislante que queda alineada con la ventana de la capa epitaxial.
MX008675A 1986-10-03 1987-10-02 Un metodo de fabricacion para formar una ventana de contacto de alineamiento automatico y su conexion en una capa epitaxial y las estructuras del dispositivo que emplean el metodo MX165273B (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/915,310 US4728623A (en) 1986-10-03 1986-10-03 Fabrication method for forming a self-aligned contact window and connection in an epitaxial layer and device structures employing the method

Publications (1)

Publication Number Publication Date
MX165273B true MX165273B (es) 1992-11-04

Family

ID=25435545

Family Applications (1)

Application Number Title Priority Date Filing Date
MX008675A MX165273B (es) 1986-10-03 1987-10-02 Un metodo de fabricacion para formar una ventana de contacto de alineamiento automatico y su conexion en una capa epitaxial y las estructuras del dispositivo que emplean el metodo

Country Status (9)

Country Link
US (1) US4728623A (es)
EP (1) EP0262294B1 (es)
JP (1) JPS63127564A (es)
AT (1) ATE73962T1 (es)
AU (1) AU594200B2 (es)
CA (1) CA1244559A (es)
DE (1) DE3777514D1 (es)
ES (1) ES2031083T3 (es)
MX (1) MX165273B (es)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918502A (en) * 1986-11-28 1990-04-17 Hitachi, Ltd. Semiconductor memory having trench capacitor formed with sheath electrode
DE3752286T2 (de) * 1986-12-22 2000-01-13 Texas Instruments Inc In einem tiefen Graben formierte Isolation mit Kontakt an der Oberfläche des Substrates
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
JPH0795568B2 (ja) * 1987-04-27 1995-10-11 日本電気株式会社 半導体記憶装置
JPH0810757B2 (ja) * 1987-05-25 1996-01-31 松下電子工業株式会社 半導体装置の製造方法
US4833516A (en) * 1987-08-03 1989-05-23 International Business Machines Corporation High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US4942554A (en) * 1987-11-26 1990-07-17 Siemens Aktiengesellschaft Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same
US5100823A (en) * 1988-02-29 1992-03-31 Motorola, Inc. Method of making buried stacked transistor-capacitor
US5200354A (en) * 1988-07-22 1993-04-06 Hyundai Electronics Industries Co. Ltd. Method for manufacturing dynamic random access memory cell
KR910007181B1 (ko) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Sdtas구조로 이루어진 dram셀 및 그 제조방법
JPH02135776A (ja) * 1988-11-17 1990-05-24 Hitachi Ltd 半導体記憶装置
US4962365A (en) * 1989-03-30 1990-10-09 Texas Instruments Incorporated Integrated circuit trench resistor
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
JPH0834298B2 (ja) * 1989-06-19 1996-03-29 シャープ株式会社 半導体装置及び半導体装置の製造方法
US5316962A (en) * 1989-08-15 1994-05-31 Matsushita Electric Industrial Co., Ltd. Method of producing a semiconductor device having trench capacitors and vertical switching transistors
US5034787A (en) * 1990-06-28 1991-07-23 International Business Machines Corporation Structure and fabrication method for a double trench memory cell device
US5064777A (en) * 1990-06-28 1991-11-12 International Business Machines Corporation Fabrication method for a double trench memory cell device
US4988637A (en) * 1990-06-29 1991-01-29 International Business Machines Corp. Method for fabricating a mesa transistor-trench capacitor memory cell structure
US5204281A (en) * 1990-09-04 1993-04-20 Motorola, Inc. Method of making dynamic random access memory cell having a trench capacitor
US5198995A (en) * 1990-10-30 1993-03-30 International Business Machines Corporation Trench-capacitor-one-transistor storage cell and array for dynamic random access memories
US5055898A (en) * 1991-04-30 1991-10-08 International Business Machines Corporation DRAM memory cell having a horizontal SOI transfer device disposed over a buried storage node and fabrication methods therefor
US5214603A (en) * 1991-08-05 1993-05-25 International Business Machines Corporation Folded bitline, ultra-high density dynamic random access memory having access transistors stacked above trench storage capacitors
JPH05211239A (ja) * 1991-09-12 1993-08-20 Texas Instr Inc <Ti> 集積回路相互接続構造とそれを形成する方法
US5264716A (en) * 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array
US5399516A (en) * 1992-03-12 1995-03-21 International Business Machines Corporation Method of making shadow RAM cell having a shallow trench EEPROM
US5314837A (en) * 1992-06-08 1994-05-24 Analog Devices, Incorporated Method of making a registration mark on a semiconductor
CA2074848C (en) * 1992-07-29 1998-02-10 Joseph P. Ellul Method of forming electrodes for trench capacitors
US5365097A (en) * 1992-10-05 1994-11-15 International Business Machines Corporation Vertical epitaxial SOI transistor, memory cell and fabrication methods
JPH06252153A (ja) * 1993-03-01 1994-09-09 Toshiba Corp 半導体装置の製造方法
JP2791260B2 (ja) * 1993-03-01 1998-08-27 株式会社東芝 半導体装置の製造方法
US5641694A (en) * 1994-12-22 1997-06-24 International Business Machines Corporation Method of fabricating vertical epitaxial SOI transistor
US5677219A (en) * 1994-12-29 1997-10-14 Siemens Aktiengesellschaft Process for fabricating a DRAM trench capacitor
US6207494B1 (en) * 1994-12-29 2001-03-27 Infineon Technologies Corporation Isolation collar nitride liner for DRAM process improvement
US5851923A (en) * 1996-01-18 1998-12-22 Micron Technology, Inc. Integrated circuit and method for forming and integrated circuit
US6103627A (en) * 1996-02-21 2000-08-15 Micron Technology, Inc. Treatment of a surface having an exposed silicon/silica interface
US5792685A (en) * 1996-02-22 1998-08-11 Siemens Aktiengesellschaft Three-dimensional device layout having a trench capacitor
US5793075A (en) * 1996-07-30 1998-08-11 International Business Machines Corporation Deep trench cell capacitor with inverting counter electrode
US5843820A (en) * 1997-09-29 1998-12-01 Vanguard International Semiconductor Corporation Method of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor
JPH11186514A (ja) * 1997-12-22 1999-07-09 Toshiba Corp 半導体記憶装置及びその製造方法
KR100347544B1 (ko) 1999-02-13 2002-08-07 주식회사 하이닉스반도체 반도체 소자의 접합 제조 방법
US6140175A (en) * 1999-03-03 2000-10-31 International Business Machines Corporation Self-aligned deep trench DRAM array device
KR100314276B1 (ko) 1999-04-12 2001-11-15 박종섭 반도체 소자의 제조방법
KR100353526B1 (ko) 1999-06-18 2002-09-19 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100345681B1 (ko) 1999-06-24 2002-07-27 주식회사 하이닉스반도체 반도체소자의 삼중웰 형성방법
KR100332119B1 (ko) 1999-06-28 2002-04-10 박종섭 반도체 소자 제조 방법
KR100332108B1 (ko) 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 및 그 제조 방법
KR100332107B1 (ko) 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 제조 방법
KR100301246B1 (ko) 1999-06-30 2001-11-01 박종섭 반도체 소자의 제조 방법
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
DE19941148B4 (de) 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
KR20010061029A (ko) 1999-12-28 2001-07-07 박종섭 엘리베이티드 소오스/드레인 구조의 모스 트랜지스터형성방법
KR100510996B1 (ko) 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
KR100327596B1 (ko) 1999-12-31 2002-03-15 박종섭 Ｓｅｇ 공정을 이용한 반도체소자의 콘택 플러그 제조방법
FR2819632B1 (fr) * 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un dispositif analogique de stockage de charges, et procede de fabrication
US6998305B2 (en) * 2003-01-24 2006-02-14 Asm America, Inc. Enhanced selectivity for epitaxial deposition
US7633110B2 (en) * 2004-09-21 2009-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell
US7402487B2 (en) * 2004-10-18 2008-07-22 Infineon Technologies Richmond, Lp Process for fabricating a semiconductor device having deep trench structures
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080310220A1 (en) * 2007-06-13 2008-12-18 International Business Machines Corporation 3-d sram array to improve stability and performance
US7755926B2 (en) * 2007-06-13 2010-07-13 International Business Machines Corporation 3-D SRAM array to improve stability and performance
US7759199B2 (en) * 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US8367528B2 (en) * 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9852902B2 (en) 2014-10-03 2017-12-26 Applied Materials, Inc. Material deposition for high aspect ratio structures
US9401410B2 (en) * 2014-11-26 2016-07-26 Texas Instruments Incorporated Poly sandwich for deep trench fill
CN113130510B (zh) * 2019-11-22 2023-06-13 长江存储科技有限责任公司 存储器件以及其混合间隔物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
DE3572422D1 (en) * 1984-06-14 1989-09-21 Ibm Dynamic ram cell
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor

Also Published As

Publication number Publication date
EP0262294B1 (en) 1992-03-18
AU594200B2 (en) 1990-03-01
JPH0371787B2 (es) 1991-11-14
DE3777514D1 (de) 1992-04-23
AU7926887A (en) 1988-04-14
JPS63127564A (ja) 1988-05-31
CA1244559A (en) 1988-11-08
EP0262294A1 (en) 1988-04-06
ATE73962T1 (de) 1992-04-15
US4728623A (en) 1988-03-01
ES2031083T3 (es) 1992-12-01

Similar Documents

Publication Publication Date Title
MX165273B (es) Un metodo de fabricacion para formar una ventana de contacto de alineamiento automatico y su conexion en una capa epitaxial y las estructuras del dispositivo que emplean el metodo
JPS6445160A (en) Semiconductor memory device and its manufacture
DE59609550D1 (de) DRAM-Speicherzelle mit vertikalem Transistor und Verfahren zur Herstellung derselben
TW365016B (en) Semiconductor component and the manufacturing method thereof
KR920001718A (ko) 반도체기억장치 및 그 제조방법
KR890008986A (ko) 측벽막을 갖는 반도체 장치와 그의 제조방법
KR880003428A (ko) 디 램 셀의 제조방법
KR950007106A (ko) 디램(dram)셀 커패시터 제조방법
KR920001733B1 (ko) 고집적 dram셀의 제조방법
KR940008097A (ko) 캐패시터 용량을 증대한 반도체 메모리 셀 제조방법
KR940008072A (ko) 반도체 소자의 고축적 용량을 갖는 캐패시터 제조 방법
KR940001396A (ko) 디램 셀의 구조 및 제조방법
KR880009437A (ko) 다이나믹 랜덤 액세스 메모리 셀의 제조방법
KR930017191A (ko) 반도체 메모리 소자의 제조방법
KR940016504A (ko) 반도체 소자의 콘택 제조방법
KR930003355A (ko) 반도체 소자의 제조방법
KR900017149A (ko) 고집적 적층형 디램 셀의 제조방법
KR940016797A (ko) 디램에서의 셀 캐패시터 제조방법
KR950004547A (ko) 반도체 소자의 제조방법
KR960036134A (ko) 반도체 소자의 트랜지스터 및 그 제조방법
KR880013165A (ko) 반도체 메모리장치 및 제조방법
KR20030002315A (ko) 반도체 소자
KR920015536A (ko) 디램셀의 스택커패시터 제조방법
KR930005210A (ko) 디램셀의 구조 및 제조방법
KR890013776A (ko) 양면형 커패시터를 이용한 dram셀 및 그의 제조방법