LV11116B - Removal of surface contaminants by irradiation from high-energy source - Google Patents

Removal of surface contaminants by irradiation from high-energy source Download PDF

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Publication number
LV11116B
LV11116B LVP-94-95A LV940095A LV11116B LV 11116 B LV11116 B LV 11116B LV 940095 A LV940095 A LV 940095A LV 11116 B LV11116 B LV 11116B
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substrate
gas
laser
contaminants
cleaned
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LVP-94-95A
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LV11116A (lv
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Audrey C Engelsberg
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Cauldron Lp
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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    • H01L21/26—Bombardment with radiation
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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    • H01L21/76819—Smoothing of the dielectric
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    • Y10S148/00—Metal treatment
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Claims (20)

  1. LV 11116 IZGUDROJUMA FORMULA 1. Virsmas piesārņojumu atdalīšanas paņēmiens no substrāta virsmas,saglabājot attīrāmās virsmas molekulāro struktūru/ kas atšķiras ar to, ka tas ietver sekojošās operācijas: nepārtrauktu gāzes padevi pār substrāta attīrāmo virsmu, turklāt šī gāze ir inerta attiecībā pret substrāta attīrāmo virsmu; un minētā substrāta apstarošanu ar lielas enerģijas starojumu, kura blīvums un ilgums atrodas robežās starp lielumu, kas nepieciešams, lai piesārņojumus atdalītu no substrāta attīrāmās virsmas, un lielumu, pie kura mainās substrāta attīrāmās virsmas molekulārā struktūra.
  2. 2. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to, ka substrāta apstarošana ar lielas enerģijas starojumu ietver substrāta apstarošanu ar lāzera stariem.
  3. 3. Paņēmiens saskaņā ar 1.punktu, kas atšķiras ar to, ka minētās apstarošanas avots ir lāzera stari.
  4. 4. Paņēmiens saskaņā ar 3.punktu, kas atšķiras ar to, ka tas ietver arī sekojošās operācijas: pār substrāta attīrāmo virsmu plūstošās gāzes analīzi, virsmu vienlaicīgi apstarojot ar lāzera stariem, lai noteiktu atdalīto piesārņojumu sastāvu; un 2 lāzera staru impulsu enerģijas blīvuma un ilguma regulēšanu, nodrošinot tādu virsmas attīrīšanas enerģijas līmeni,kāds ir nepieciešams, lai pārrautu saites starp analizētajiem virsmas piesārņotājiem un apstrādājamo virsmu.
  5. 5. Paņēmiens saskaņā ar 4.punktu, kas atšķiras ar to, ka lāzera staru impulsu enerģijas blīvuma un ilguma regulēšanas operācija ietver tādu lāzera staru impulsu enerģijas blīvuma regulēšanu, kas nodrošina virsmas attīrīšanas enerģijas līmeņa paaugstināšanu no divām līdz piecām reizēm, kas ir nepieciešams, lai pārrautu saites starp analizētajiem virsmas piesārņotājiem un attīrāmo virsmu.
  6. 6. Paņēmiens hemosorbēto molekulāro piesārņojumu atdalīšanai no pusvadītāja substrāta virsmas,vienlaicīgi saglabājot substrāta attīrāmo virsmu, kas atšķiras ar to, ka tas ietver šādas operācijas: nepārtrauktu gāzes padevi pār substrāta attīrāmo virsmu,turklāt šī gāze ir inerta attiecībā pret substrāta attīrāmo virsmu; un minētā substrāta apstarošanu ar lāzera impulsu sēriju, turklāt šīs lāzera impulsu sērijas ilgums ir visma2 6000 impulsu, bet katra impulsa enerģijas blīvums svārstās robežās no 35 līdz 75 mJ/cm2.
  7. 7. Paņēmiens saskaņā ar 6.punktu, kas atšķiras ar to, ka minētā pusvadītāja substrāta attīrāmā virsma sastāv, galvenokārt, no silīcija. 3 LV 11116
  8. 8. Paņēmiens saskaņā ar 6.punktu, kas atšķiras ar to, ka minētā pusvadītāja substrāta attīrāmā virsma sastāv, galvenokārt, no silīcija, un uz tās ir uzklāta pusvadītāja elektroniskā shēma.
  9. 9. Paņēmiens saskaņā ar 8.punktu, kas atšķiras ar to, ka lāzera starojums turpinās apmēram līdz 6000 impulsiem, bet to enerģijas blīvums ir ap 35 mJ/cm2.
  10. 10. Paņēmiens saskaņā ar 1.punktu molekulāru piesārņojumu atdalīšanai no pusvadītāja substrāta virsmas pusvadītāja izgatavošanas laikā, vienlaicīgi saglabājot substrāta attīrāmo virsmu, kas atšķiras ar to, ka tas ietver šādas operācijas: gāzes padevi pār pusvadītāja substrāta attīrāmo virsmu, turklāt šī gāze ir inerta attiecībā pret substrāta attīrāmo virsmu; inertās gāzes plūsmas laikā pār substrāta attīrāmo virsmu pirms elektroniskās shēmas uzklāšanas uz pusvadītāja substrāta virsmas substrātu apstaro ar lāzera starojumu, kura enerģijas blīvums un ilgums atrodas robežās starp lielumu, kas nepieciešams, lai virsmas piesārņojumus atdalītu no substrāta attīrāmās virsmas un lielumu, pie kura mainās substrāta attīrāmās virsmas molekulārā struktūra; elektroniskās shēmas uzklāšanu uz pusvadītāja substrāta attīrītās virsmas; gāzes padevi pār uzklāto kārtu,turklāt šī gāze ir inerta attiecībā pret substrāta attīrīto virsmu un uzklāto kārtu; inertās gāzes plūsmas laikā pār substrāta attīrāmo virsmu un uzklāto kārtu pēc elektroniskās shēmas uzklāšanas uz substrāta 4 virsmas substrāta attīrīto virsmu apstaro ar lāzera starojumu, kura enerģijas blīvums un ilgums atrodas robežās starp lielumu, kas nepieciešams, lai virsmas piesārņojumus atdalītu no substrāta attīrāmās virsmas un lielumu, pie kura mainās substrāta attīrāmās virsmas molekulārā struktūra.
  11. 11. Paņēmiens saskaņā ar 10.punktu, kas atšķiras ar to, ka substrāta attīrāmā virsma sastāv, galvenokārt,no silīcija.
  12. 12. Paņēmiens saskaņā ar 12.punktu, k as atšķiras ar to, ka lāzera starojums turpinās apmēram līdz 6000 impulsiem, bet to enerģijas blīvums ir ap 35 mJ/cm2.
  13. 13. Ierīce adsorbēto virsmas piesārņojumu atdalīšanai no substrāta (12) virsmas, vienlaicīgi saglabājot substrāta attīrāmo virsmu, kas atšķiras ar to, ka tā satur: gāzi (18), kas ir inerta pret substrāta attīrāmo virsmu; gāzes plūsmas nodrošināšanas līdzekli, kas nepārtraukti šo gāzi pievada substrāta attīrāmai virsmai; lāzera impulsu ģenerēšanas līdzekli (14), kas ģenerē lāzera impulsus (11),kuri vērsti virzienā uz substrāta attīrāmo virsmu, pār kuru plūst gāze (18), un kuru enerģijas blīvums svārstās robežās no lieluma, kas nepieciešams, lai sarautu saites starp ad-sorbētajiem virsmas piesārņotājiem un attīrāmo virsmu, līdz lielumam, pie kura mainās substrāta apstrādājamās virsmas molekulārā struktūra. 5 LV 11116
  14. 14. Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka par lāzera impulsu ģenerēšanas līdzekli (14) kalpo ultravioletās enerģijas avots.
  15. 15. Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka tajā lāzera impulsu ģenerēšanas līdzeklis (14) ir KrF ek-simēra lāzers.
  16. 16. Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka gāzes plūsmas nodrošināšanas līdzekļi satur: ierobežotu telpu (15), kurā var ievietot attīrāmo substrātu (12), turklāt šai telpai ir ieejas atvere (23) un izejas atvere (25), un ierīci gāzes ievadīšanai ierobežotajā telpā pa ieejas atveri (23).
  17. 17. Ierīce saskaņā ar 13.punktu, kas atšķiras ar to,ka gāze ir ķīmiski inerta attiecībā pret minētā substrāta (12) virsmu.
  18. 18. Ierīce saskaņā ar 17.punktu, kas atšķiras ar to, ka ķīmiski inertā gāze ir argons.
  19. 19. Ierīce saskaņā ar 13.punktu, kas atšķiras ar to, ka tā satur arī gāzes analizatoru (27) pār substrāta apstrādājamo virsmu plūstošās gāzes analīzei pret šo virsmu virzītās lāzera enerģijas ģenerēšanas laikā,turklāt šis gāzes analizators (27) kalpo, lai noteiktu no minētās virsmas atdalīto piesārņojumu sastāvu. 6
  20. 20. Ierīce saskaņā ar 16.punktu, kas atšķiras ar to, ka tā bez tam satur arī gāzes analizatoru (27) pār substrāta apstrādājamo virsmu plūstošās gāzes analīzei pret šo virsmu virzītās lāzera enerģijas ģenerēšanas laikā, turklāt šis gāzes analizators (27) kalpo, lai noteiktu no minētās virsmas atdalīto piesārņojumu sastāvu,un ir savienots ar minētās ierobežotās telpas izejas atveri.
LVP-94-95A 1988-07-08 1994-05-04 Removal of surface contaminants by irradiation from high-energy source LV11116B (en)

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NO180739B (no) 1997-02-24
WO1990000812A1 (en) 1990-01-25
DE68906318D1 (de) 1993-06-09
ATE88923T1 (de) 1993-05-15
AU620766B2 (en) 1992-02-20
JP2634245B2 (ja) 1997-07-23
HK5195A (en) 1995-01-20
FI910075A0 (fi) 1991-01-07
EP0350021A2 (en) 1990-01-10
DK303490A (da) 1991-02-25
DE68906318T2 (de) 1993-10-07
BR8907529A (pt) 1991-06-11
DK303490D0 (da) 1990-12-21
EP0350021B1 (en) 1993-05-05
AU3867689A (en) 1990-02-05
KR0157608B1 (ko) 1998-12-01
CA1328908C (en) 1994-04-26
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KR900002414A (ko) 1990-02-28
ES2041374T3 (es) 1993-11-16
JPH0286128A (ja) 1990-03-27
US5024968A (en) 1991-06-18
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