BR8907529A - Remocao de contaminantes de superficie atraves de irradiacao de uma fonte de elevada energia - Google Patents
Remocao de contaminantes de superficie atraves de irradiacao de uma fonte de elevada energiaInfo
- Publication number
- BR8907529A BR8907529A BR898907529A BR8907529A BR8907529A BR 8907529 A BR8907529 A BR 8907529A BR 898907529 A BR898907529 A BR 898907529A BR 8907529 A BR8907529 A BR 8907529A BR 8907529 A BR8907529 A BR 8907529A
- Authority
- BR
- Brazil
- Prior art keywords
- irradiation
- surface contaminants
- removal
- energy source
- high energy
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/091—Laser beam processing of fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/093—Laser beam treatment in general
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/906—Cleaning of wafer as interim step
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/216,903 US5024968A (en) | 1988-07-08 | 1988-07-08 | Removal of surface contaminants by irradiation from a high-energy source |
PCT/US1989/002952 WO1990000812A1 (en) | 1988-07-08 | 1989-07-07 | Removal of surface contaminants by irradiation from a high-energy source |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8907529A true BR8907529A (pt) | 1991-06-11 |
Family
ID=22808939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR898907529A BR8907529A (pt) | 1988-07-08 | 1989-07-07 | Remocao de contaminantes de superficie atraves de irradiacao de uma fonte de elevada energia |
Country Status (16)
Country | Link |
---|---|
US (1) | US5024968A (pt) |
EP (1) | EP0350021B1 (pt) |
JP (1) | JP2634245B2 (pt) |
KR (1) | KR0157608B1 (pt) |
AT (1) | ATE88923T1 (pt) |
AU (1) | AU620766B2 (pt) |
BR (1) | BR8907529A (pt) |
CA (1) | CA1328908C (pt) |
DE (1) | DE68906318T2 (pt) |
DK (1) | DK303490A (pt) |
ES (1) | ES2041374T3 (pt) |
FI (1) | FI910075A0 (pt) |
HK (1) | HK5195A (pt) |
LV (1) | LV11116B (pt) |
NO (1) | NO180739C (pt) |
WO (1) | WO1990000812A1 (pt) |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
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US5525727A (en) * | 1982-05-18 | 1996-06-11 | University Of Florida | Brain-specific drug delivery |
US6048588A (en) * | 1988-07-08 | 2000-04-11 | Cauldron Limited Partnership | Method for enhancing chemisorption of material |
US5531857A (en) * | 1988-07-08 | 1996-07-02 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation from a high energy source |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
US5643472A (en) * | 1988-07-08 | 1997-07-01 | Cauldron Limited Partnership | Selective removal of material by irradiation |
US5151135A (en) * | 1989-09-15 | 1992-09-29 | Amoco Corporation | Method for cleaning surfaces using UV lasers |
JP2819166B2 (ja) * | 1989-10-03 | 1998-10-30 | キヤノン株式会社 | 放射光用光学素子の汚れ除去装置および方法 |
US5342350A (en) * | 1990-02-16 | 1994-08-30 | Jean Amiel | Method of endoscopically treating lithiases with a multichannel probe suitable for draining the treated lithiases |
FR2658412A1 (fr) * | 1990-02-19 | 1991-08-23 | Amiel Jean | Dispositif endoscopique notamment pour la destruction endoscopique de calcul par lithotritie. |
US5493445A (en) * | 1990-03-29 | 1996-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Laser textured surface absorber and emitter |
US5322988A (en) * | 1990-03-29 | 1994-06-21 | The United States Of America As Represented By The Secretary Of The Navy | Laser texturing |
JP2977098B2 (ja) * | 1990-08-31 | 1999-11-10 | 忠弘 大見 | 帯電物の中和装置 |
US5093279A (en) * | 1991-02-01 | 1992-03-03 | International Business Machines Corporation | Laser ablation damascene process |
US5695569A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Removal of metal contamination |
EP0502356A3 (en) * | 1991-02-28 | 1993-03-10 | Texas Instruments Incorporated | Photo-stimulated removal of trace metals |
JP2920850B2 (ja) * | 1991-03-25 | 1999-07-19 | 東京エレクトロン株式会社 | 半導体の表面処理方法及びその装置 |
JP2816037B2 (ja) * | 1991-07-25 | 1998-10-27 | 忠弘 大見 | 帯電物体の中和装置 |
JPH05218276A (ja) * | 1991-11-12 | 1993-08-27 | Motorola Inc | 割れにくい半導体装置およびその作製方法 |
US5571335A (en) * | 1991-12-12 | 1996-11-05 | Cold Jet, Inc. | Method for removal of surface coatings |
US5328517A (en) * | 1991-12-24 | 1994-07-12 | Mcdonnell Douglas Corporation | Method and system for removing a coating from a substrate using radiant energy and a particle stream |
US5204517A (en) * | 1991-12-24 | 1993-04-20 | Maxwell Laboratories, Inc. | Method and system for control of a material removal process using spectral emission discrimination |
US5194723A (en) * | 1991-12-24 | 1993-03-16 | Maxwell Laboratories, Inc. | Photoacoustic control of a pulsed light material removal process |
US5782253A (en) * | 1991-12-24 | 1998-07-21 | Mcdonnell Douglas Corporation | System for removing a coating from a substrate |
US5281798A (en) * | 1991-12-24 | 1994-01-25 | Maxwell Laboratories, Inc. | Method and system for selective removal of material coating from a substrate using a flashlamp |
US5613509A (en) * | 1991-12-24 | 1997-03-25 | Maxwell Laboratories, Inc. | Method and apparatus for removing contaminants and coatings from a substrate using pulsed radiant energy and liquid carbon dioxide |
US5319183A (en) * | 1992-02-18 | 1994-06-07 | Fujitsu Limited | Method and apparatus for cutting patterns of printed wiring boards and method and apparatus for cleaning printed wiring boards |
BR9306174A (pt) * | 1992-03-31 | 1998-01-13 | Cauldron Lp | Remoção de contaminantes de superfície através de irradiação |
US5512123A (en) * | 1992-05-19 | 1996-04-30 | Maxwell Laboratories | Method for using pulsed optical energy to increase the bondability of a surface |
TW372972B (en) * | 1992-10-23 | 1999-11-01 | Novartis Ag | Antiretroviral acyl compounds |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
US7037403B1 (en) | 1992-12-28 | 2006-05-02 | Applied Materials Inc. | In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization |
US6017397A (en) * | 1993-03-05 | 2000-01-25 | Hyundai Eletronics America | Automated washing method |
US5373140A (en) * | 1993-03-16 | 1994-12-13 | Vernay Laboratories, Inc. | System for cleaning molding equipment using a laser |
TW252211B (pt) * | 1993-04-12 | 1995-07-21 | Cauldron Ltd Parthership | |
US5656096A (en) * | 1993-05-25 | 1997-08-12 | Polygon Industries, Inc. | Method for photopyrolitically removing a contaminant |
US5482561A (en) * | 1993-06-11 | 1996-01-09 | Hughes Aircraft Company | Method for removing organic deposits from sand particles with laser beam |
US5518956A (en) * | 1993-09-02 | 1996-05-21 | General Electric Company | Method of isolating vertical shorts in an electronic array using laser ablation |
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GB9407058D0 (en) * | 1994-04-09 | 1994-06-01 | British Nuclear Fuels Plc | Material removal by laser ablation |
US5516369A (en) * | 1994-05-06 | 1996-05-14 | United Microelectronics Corporation | Method and apparatus for particle reduction from semiconductor wafers |
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US6876454B1 (en) | 1995-03-28 | 2005-04-05 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
US5637245A (en) * | 1995-04-13 | 1997-06-10 | Vernay Laboratories, Inc. | Method and apparatus for minimizing degradation of equipment in a laser cleaning technique |
TW284907B (en) * | 1995-06-07 | 1996-09-01 | Cauldron Lp | Removal of material by polarized irradiation and back side application for radiation |
US6027960A (en) | 1995-10-25 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Laser annealing method and laser annealing device |
US5756380A (en) * | 1995-11-02 | 1998-05-26 | Motorola, Inc. | Method for making a moisture resistant semiconductor device having an organic substrate |
IL115934A0 (en) * | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser processing chamber with cassette cell |
IL115931A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser stripping improvement by modified gas composition |
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-
1989
- 1989-07-06 AT AT89112319T patent/ATE88923T1/de not_active IP Right Cessation
- 1989-07-06 DE DE89112319T patent/DE68906318T2/de not_active Expired - Fee Related
- 1989-07-06 ES ES198989112319T patent/ES2041374T3/es not_active Expired - Lifetime
- 1989-07-06 EP EP89112319A patent/EP0350021B1/en not_active Expired - Lifetime
- 1989-07-07 KR KR1019890009662A patent/KR0157608B1/ko not_active IP Right Cessation
- 1989-07-07 BR BR898907529A patent/BR8907529A/pt not_active Application Discontinuation
- 1989-07-07 WO PCT/US1989/002952 patent/WO1990000812A1/en active Application Filing
- 1989-07-07 CA CA000605060A patent/CA1328908C/en not_active Expired - Fee Related
- 1989-07-07 AU AU38676/89A patent/AU620766B2/en not_active Ceased
- 1989-07-10 JP JP1177848A patent/JP2634245B2/ja not_active Expired - Fee Related
-
1990
- 1990-12-21 DK DK303490A patent/DK303490A/da not_active Application Discontinuation
-
1991
- 1991-01-07 NO NO910067A patent/NO180739C/no not_active IP Right Cessation
- 1991-01-07 FI FI910075A patent/FI910075A0/fi unknown
-
1994
- 1994-05-04 LV LVP-94-95A patent/LV11116B/en unknown
-
1995
- 1995-01-12 HK HK5195A patent/HK5195A/xx not_active IP Right Cessation
Also Published As
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---|---|
JP2634245B2 (ja) | 1997-07-23 |
KR0157608B1 (ko) | 1998-12-01 |
DK303490D0 (da) | 1990-12-21 |
US5024968A (en) | 1991-06-18 |
AU3867689A (en) | 1990-02-05 |
JPH0286128A (ja) | 1990-03-27 |
NO180739C (no) | 1997-06-04 |
KR900002414A (ko) | 1990-02-28 |
FI910075A0 (fi) | 1991-01-07 |
AU620766B2 (en) | 1992-02-20 |
HK5195A (en) | 1995-01-20 |
WO1990000812A1 (en) | 1990-01-25 |
EP0350021A3 (en) | 1990-05-23 |
NO910067L (no) | 1991-01-07 |
DE68906318D1 (de) | 1993-06-09 |
LV11116B (en) | 1996-10-20 |
DE68906318T2 (de) | 1993-10-07 |
ES2041374T3 (es) | 1993-11-16 |
LV11116A (lv) | 1996-04-20 |
CA1328908C (en) | 1994-04-26 |
DK303490A (da) | 1991-02-25 |
NO180739B (no) | 1997-02-24 |
EP0350021A2 (en) | 1990-01-10 |
ATE88923T1 (de) | 1993-05-15 |
EP0350021B1 (en) | 1993-05-05 |
NO910067D0 (no) | 1991-01-07 |
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