NO954027D0 - Fjerning av overflateforurensninger ved bestråling - Google Patents
Fjerning av overflateforurensninger ved bestrålingInfo
- Publication number
- NO954027D0 NO954027D0 NO954027A NO954027A NO954027D0 NO 954027 D0 NO954027 D0 NO 954027D0 NO 954027 A NO954027 A NO 954027A NO 954027 A NO954027 A NO 954027A NO 954027 D0 NO954027 D0 NO 954027D0
- Authority
- NO
- Norway
- Prior art keywords
- substrate
- surface contaminants
- removal
- radiation
- contaminants
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
- B23K26/1436—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for pressure control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1435—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
- B23K26/1437—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for flow rate control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Fluid Mechanics (AREA)
- Toxicology (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Cultivation Of Plants (AREA)
- Processing Of Solid Wastes (AREA)
- Steering Controls (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4516593A | 1993-04-12 | 1993-04-12 | |
PCT/US1994/003907 WO1994023854A1 (en) | 1993-04-12 | 1994-04-11 | Removal of surface contaminants by irradiation |
Publications (2)
Publication Number | Publication Date |
---|---|
NO954027D0 true NO954027D0 (no) | 1995-10-10 |
NO954027L NO954027L (no) | 1995-12-11 |
Family
ID=21936355
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO954027A NO954027L (no) | 1993-04-12 | 1995-10-10 | Fjerning av overflateforurensninger ved bestråling |
Country Status (17)
Country | Link |
---|---|
EP (1) | EP0693978B1 (no) |
JP (1) | JP2820534B2 (no) |
CN (1) | CN1066644C (no) |
AT (1) | ATE186859T1 (no) |
AU (1) | AU684772B2 (no) |
BR (1) | BR9405973A (no) |
CA (1) | CA2160255A1 (no) |
CZ (1) | CZ267195A3 (no) |
DE (1) | DE69421806D1 (no) |
FI (1) | FI954837A (no) |
HU (1) | HUT73857A (no) |
LV (1) | LV11288B (no) |
NO (1) | NO954027L (no) |
RU (1) | RU2136467C1 (no) |
SG (1) | SG41949A1 (no) |
TW (1) | TW252211B (no) |
WO (1) | WO1994023854A1 (no) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643472A (en) * | 1988-07-08 | 1997-07-01 | Cauldron Limited Partnership | Selective removal of material by irradiation |
IL115931A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser stripping improvement by modified gas composition |
IL115933A0 (en) | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Process and apparatus for oblique beam revolution for the effective laser stripping of sidewalls |
IL115934A0 (en) * | 1995-11-09 | 1996-01-31 | Oramir Semiconductor Ltd | Laser processing chamber with cassette cell |
KR100636451B1 (ko) * | 1997-06-10 | 2006-10-18 | 가부시키가이샤 니콘 | 광학 장치 및 그 세정 방법과 투영 노광 장치 및 그 제조방법 |
US6325078B2 (en) | 1998-01-07 | 2001-12-04 | Qc Solutions, Inc., | Apparatus and method for rapid photo-thermal surface treatment |
TW563002B (en) * | 1999-11-05 | 2003-11-21 | Asml Netherlands Bv | Lithographic projection apparatus, method of manufacturing a device using a lithographic projection apparatus, and device manufactured by the method |
DE10206687B4 (de) * | 2002-02-18 | 2004-02-19 | Infineon Technologies Ag | Vorrichtung und Verfahren zur lichtinduzierten chemischen Behandlung eines Werkstücks |
US7476312B2 (en) | 2004-04-15 | 2009-01-13 | Trojan Technologies Inc. | Fluid treatment system |
US7648581B2 (en) | 2004-11-16 | 2010-01-19 | Tokyo Electron Limited | Substrate cleaning method, substrate cleaning apparatus, substrate processing system, substrate cleaning program and storage medium |
JP4610308B2 (ja) * | 2004-11-16 | 2011-01-12 | 東京エレクトロン株式会社 | 基板洗浄方法、基板洗浄装置、基板処理システム、基板洗浄プログラム及び記憶媒体 |
NO328089B1 (no) * | 2007-09-03 | 2009-11-30 | Weltec As | Dekkgasstromningsstyrer for et sveiseapparat |
GB2452941B (en) * | 2007-09-19 | 2012-04-11 | Wolfson Microelectronics Plc | Mems device and process |
DE102007051459A1 (de) * | 2007-10-27 | 2009-05-14 | Asml Netherlands B.V. | Reinigung eines optischen Systems mittels Strahlungsenergie |
ES2337860B8 (es) * | 2007-12-19 | 2011-07-28 | Airbus Operations, S.L. | Procedimiento para la preparacion y limpieza de utiles de fabricacionde piezas de material compuesto, y dispositivo correspondiente. |
CN101580222B (zh) * | 2008-05-15 | 2011-11-16 | 原相科技股份有限公司 | 微机电元件与制作方法 |
EP2313230A4 (en) | 2008-07-09 | 2017-03-08 | FEI Company | Method and apparatus for laser machining |
RU2445175C1 (ru) * | 2010-06-28 | 2012-03-20 | Общество с ограниченной ответственностью "Центр лазерных технологий" (ООО "ЦЛТ") | Способ поверхностной лазерной обработки и устройство для его осуществления |
DE102011079451A1 (de) | 2011-07-20 | 2012-08-09 | Carl Zeiss Smt Gmbh | Optische Anordnung und Verfahren zur Verringerung von oxidischen Verunreinigungen |
JP5453487B2 (ja) * | 2012-05-24 | 2014-03-26 | ジルトロニック アクチエンゲゼルシャフト | 超音波洗浄方法および超音波洗浄装置 |
HU229953B1 (hu) * | 2012-07-05 | 2015-03-02 | Sld Enhanced Recovery, Inc | Eljárás és berendezés elsősorban kitermelőcsövek alkáliföldfém-só lerakódásainak eltávolítására |
RU2552296C2 (ru) * | 2012-12-11 | 2015-06-10 | Общество с ограниченной ответственностью "Медицинские нанотехнологии" | Способ исследования нано- и микрообъектов методом зондовой микроскопии |
DE102015011229B4 (de) * | 2015-08-27 | 2020-07-23 | Süss Microtec Photomask Equipment Gmbh & Co. Kg | Vorrichtung zum Aufbringen eines mit UV-Strahlung beaufschlagten flüssigen Mediums auf ein Substrat |
CN106994453A (zh) * | 2016-01-22 | 2017-08-01 | 台湾神户电池股份有限公司 | 电池极板板头清洁方法 |
CN107203094B (zh) * | 2017-07-03 | 2020-07-24 | 京东方科技集团股份有限公司 | 掩膜版清理装置及方法 |
KR101987957B1 (ko) * | 2017-09-05 | 2019-06-12 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN108145595B (zh) * | 2017-12-22 | 2020-07-07 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种抛光液供给装置及系统 |
KR102573280B1 (ko) * | 2018-03-21 | 2023-09-01 | 삼성전자주식회사 | 기판 세정 방법, 기판 세정 장치 및 그를 이용한 반도체 소자의 제조방법 |
KR102433558B1 (ko) | 2019-07-11 | 2022-08-19 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN111943526A (zh) * | 2020-07-06 | 2020-11-17 | 南方科技大学 | 抛光方法及应用、抛光装置、石英玻璃 |
CN112246782B (zh) * | 2020-08-19 | 2022-04-12 | 厦门理工学院 | 一种激光清洗头 |
KR102504805B1 (ko) * | 2021-03-15 | 2023-02-28 | 주식회사 지티아이코리아 | 웨이퍼 막질 제거 장치 |
EP4309809A1 (de) * | 2022-07-19 | 2024-01-24 | Müller, Axel | Reinigungsverfahren mittels gasspülung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4297172A (en) * | 1980-01-23 | 1981-10-27 | Kansas State University Research Foundation | Low energy process of producing gasoline-ethanol mixtures |
JPS57102229A (en) * | 1980-12-17 | 1982-06-25 | Matsushita Electric Ind Co Ltd | Substrate processing method |
US4756765A (en) * | 1982-01-26 | 1988-07-12 | Avco Research Laboratory, Inc. | Laser removal of poor thermally-conductive materials |
JPS60129136A (ja) * | 1983-12-15 | 1985-07-10 | Toshiba Corp | 紫外線照射装置 |
JPS61119028A (ja) * | 1984-11-15 | 1986-06-06 | Nec Corp | 光化学気相成長装置 |
US4829552A (en) * | 1985-12-06 | 1989-05-09 | Rossi Remo J | Anti-scatter grid system |
US5024968A (en) * | 1988-07-08 | 1991-06-18 | Engelsberg Audrey C | Removal of surface contaminants by irradiation from a high-energy source |
JPH0513346A (ja) * | 1991-06-28 | 1993-01-22 | Toshiba Corp | 半導体装置の製造方法 |
JPH05179447A (ja) * | 1991-12-26 | 1993-07-20 | Nissin High Voltage Co Ltd | イオン注入装置 |
US5228206A (en) * | 1992-01-15 | 1993-07-20 | Submicron Systems, Inc. | Cluster tool dry cleaning system |
-
1994
- 1994-03-24 TW TW083102579A patent/TW252211B/zh active
- 1994-04-11 CZ CZ952671A patent/CZ267195A3/cs unknown
- 1994-04-11 DE DE69421806T patent/DE69421806D1/de not_active Expired - Lifetime
- 1994-04-11 AT AT94914097T patent/ATE186859T1/de not_active IP Right Cessation
- 1994-04-11 EP EP94914097A patent/EP0693978B1/en not_active Expired - Lifetime
- 1994-04-11 RU RU95119598A patent/RU2136467C1/ru active
- 1994-04-11 CA CA002160255A patent/CA2160255A1/en not_active Abandoned
- 1994-04-11 JP JP6523346A patent/JP2820534B2/ja not_active Expired - Fee Related
- 1994-04-11 BR BR9405973A patent/BR9405973A/pt not_active Application Discontinuation
- 1994-04-11 WO PCT/US1994/003907 patent/WO1994023854A1/en not_active Application Discontinuation
- 1994-04-11 HU HU9502907A patent/HUT73857A/hu unknown
- 1994-04-11 CN CN94192170A patent/CN1066644C/zh not_active Expired - Fee Related
- 1994-04-11 AU AU66297/94A patent/AU684772B2/en not_active Ceased
-
1995
- 1995-10-10 NO NO954027A patent/NO954027L/no not_active Application Discontinuation
- 1995-10-11 LV LVP-95-306A patent/LV11288B/en unknown
- 1995-10-11 FI FI954837A patent/FI954837A/fi unknown
- 1995-11-06 SG SG1995001732A patent/SG41949A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP0693978A1 (en) | 1996-01-31 |
CN1125917A (zh) | 1996-07-03 |
NO954027L (no) | 1995-12-11 |
AU6629794A (en) | 1994-11-08 |
CA2160255A1 (en) | 1994-10-27 |
FI954837A0 (fi) | 1995-10-11 |
BR9405973A (pt) | 1995-12-12 |
CN1066644C (zh) | 2001-06-06 |
SG41949A1 (en) | 1997-08-15 |
ATE186859T1 (de) | 1999-12-15 |
EP0693978B1 (en) | 1999-11-24 |
JP2820534B2 (ja) | 1998-11-05 |
JPH08509652A (ja) | 1996-10-15 |
HUT73857A (en) | 1996-10-28 |
TW252211B (no) | 1995-07-21 |
LV11288A (lv) | 1996-06-20 |
RU2136467C1 (ru) | 1999-09-10 |
LV11288B (en) | 1996-12-20 |
FI954837A (fi) | 1995-10-11 |
CZ267195A3 (en) | 1996-04-17 |
HU9502907D0 (en) | 1995-12-28 |
DE69421806D1 (de) | 1999-12-30 |
AU684772B2 (en) | 1998-01-08 |
WO1994023854A1 (en) | 1994-10-27 |
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