KR970028873A - 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 - Google Patents

내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 Download PDF

Info

Publication number
KR970028873A
KR970028873A KR1019960053572A KR19960053572A KR970028873A KR 970028873 A KR970028873 A KR 970028873A KR 1019960053572 A KR1019960053572 A KR 1019960053572A KR 19960053572 A KR19960053572 A KR 19960053572A KR 970028873 A KR970028873 A KR 970028873A
Authority
KR
South Korea
Prior art keywords
component
resist
weight
content
composition
Prior art date
Application number
KR1019960053572A
Other languages
English (en)
Other versions
KR100222513B1 (ko
Inventor
마사히토 다나베
가즈마사 와키야
마사카즈 고바야시
도시마사 나카야마
Original Assignee
나카네 히사시
도쿄 오카 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26499593&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR970028873(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 나카네 히사시, 도쿄 오카 고교 가부시키가이샤 filed Critical 나카네 히사시
Publication of KR970028873A publication Critical patent/KR970028873A/ko
Application granted granted Critical
Publication of KR100222513B1 publication Critical patent/KR100222513B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)

Abstract

본 발명은 (a) 불화수소산과 금속 비함유 염기와의 염, (b) 수용성 유기용매, (c) 물 및 임의의 (d) 내부식제를 포함하는 pH 5 내지 8의 내식막용 박리액 조성물에 관한 것이다. 내식막을 박리시키는 방법은 (1) 금속 필름을 갖는 기판상에 내식막층을 형성하는 단계, (2) 마스크 패턴을 통해 내식막층을 노광시키고, 내식막층을 현상하여 내식막 패턴을 형성하는 단계 및 (3) 마스크로서 내식막 패턴을 사용하여 기판을 건식-에칭시키고, 불필요한 내식막 및 변형된 내식막 필름을 박리액 조성물로 박리시키는 단계를 포함한다.

Description

내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (18)

  1. (a) 불화수소산과 금속 비함유 염기와의 염, (b) 수용성 유기 용매 및 (c) 물을 포함하는, pH 5 내지 8의 내식막용 박리액 조성물.
  2. 제1항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 30 내지 90중량%이며 그 나머지가 성분(c)인 내식막용 박리액 조성물.
  3. 제1항에 있어서, 성분 (d)로서 내부식제를 추가로 포함하는 내식막용 박리액 조성물.
  4. 제3항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 40 내지 80중량%이며 성분 (d)의 함량이 0.5 내지 15중량%이고 그 나머지가 성분 (c)인 내식막용 박리액 조성물.
  5. 제1항에 있어서, 성분 (a)가 하이드로실아민, 1급, 2급 또는 3급 지방족, 지환족, 방향족 및 헤테로사이클릭 아민, 암모니아수 및 탄소수 1 내지 4의 저급 알킬 4급 암모늄염 그룹중에서 선택된 하나 이상의 금속 비함유 염기와 불화수소산과의 염인 내식막용 박리액 조성물.
  6. 제5항에 있어서, 성분 (a)가 불화암모늄인 내식막용 박리액 조성물.
  7. 제1항에 있어서, 성분 (b)가 디에틸 설폭사이드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, 1,3-디메딜-2-이미다졸리디논, 에틸렌 글리콜 및 디에틸렌 글리콜 모노부틸 에테르중에서 선택된 하나 이상의 성분인 내식막용 박리액 조성물.
  8. 제7항에 있어서, 성분 (b)가 에틸렌 글리콜 10중량% 이상을 포함하는 수용성 유기 용액인 내식막용 박리액 조성물.
  9. 제3항에 있어서, 성분 (d)가 방향족 하이드록실 화합물, 아세틸렌 알콜, 카복실 그룹-함유 유기 화합물 및 이의 무수물, 트리아졸 화합물 및 당류중에서 선택된 하나 이상의 성분인 내식막용 박리액 조성물.
  10. (1) 금속 필름을 갖는 기판상에 내식막 층을 형성시키는 단계, (2) 마스크 패턴을 통해 내식막 층을 노광시킨 후, 내식막층을 현상하여 내식막 패턴을 형성하는 단계 및 (3) 마스크로서 내식막 패턴을 사용하여 기판을 건식-에칭시킨 후, 불필요한 내식막 및 변형된 내식막 필름을, (a) 금속 비함유 염기와 불화수소산과의 염, (b) 수용성 유기 용매 및 (c) 물을 포함하는 pH 5 내지 8의 내식막용 박리액 조성물로 박리시키는 단계를 포함하는, 내식막 박리방법.
  11. 제10항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 30 내지 90중량%이며 그 나머지가 성분 (c)인 방법.
  12. 제10항에 있어서, 내식막용 박리액 조성물이 성분 (d)로서 내부식제를 추가로 포함하는 방법.
  13. 제12항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 40 내지 80중량%이며 성분 (d)의 함량이 0.5 내지 15중량%이고 그 나머지가 성분 (c)인 방법.
  14. 제10항에 있어서, 성분 (a)가 하이드록실아민, 1급, 2급 또는 3급 지방족, 지환족, 방향족 및 헤테로사이클릭 아민, 암모니아수 및 탄소수 1 내지 4의 저급 알킬 4급 암모늄염 그룹중에서 선택된 하나 이상의 금속 비함유 염기와 불화수소산과의 염인 방법.
  15. 제10항에 있어서, 성분 (a)가 불화암모늄인 방법.
  16. 제10항에 있어서, 성분 (b)가 디에틸 설폭사이드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, 1,3-디에틸-2-이미다졸리디논, 에틸렌 글리콜 및 디에틸렌 글리콜 모노부틸 에테르중에서 선택된 하나 이상의 성분인 방법.
  17. 제16항에 있어서, 성분 (b)가 에틸렌 글리콜 10중량% 이상을 포함하는 수용성 유기 용매인 방법.
  18. 제12항에 있어서, 성분 (d)가 방향족 하이드록실 화합물, 아세틸렌 알콜, 카복실 그룹-함유 유기 화합물 및 이의 무수물, 트리아졸 화합물 및 당류중에서 선택된 하나 이상의 성분인 방법.
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019960053572A 1995-11-13 1996-11-13 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 KR100222513B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-317035 1995-11-13
JP31703595 1995-11-13
JP17987296A JP3236220B2 (ja) 1995-11-13 1996-06-21 レジスト用剥離液組成物
JP96-179872 1996-06-21

Publications (2)

Publication Number Publication Date
KR970028873A true KR970028873A (ko) 1997-06-24
KR100222513B1 KR100222513B1 (ko) 1999-10-01

Family

ID=26499593

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960053572A KR100222513B1 (ko) 1995-11-13 1996-11-13 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법

Country Status (6)

Country Link
US (2) US5792274A (ko)
EP (1) EP0773480B1 (ko)
JP (1) JP3236220B2 (ko)
KR (1) KR100222513B1 (ko)
DE (1) DE69620848T2 (ko)
TW (1) TW439018B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674300B1 (ko) * 2005-10-07 2007-01-24 삼성전기주식회사 리지드-플렉시블 인쇄회로기판의 제조방법

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
JPH10239865A (ja) * 1997-02-24 1998-09-11 Jsr Corp ネガ型フォトレジスト用剥離液組成物
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
KR100510446B1 (ko) * 1998-01-07 2005-10-21 삼성전자주식회사 반도체 장치의 콘택홀 세정방법
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
US6432209B2 (en) * 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
TW460748B (en) * 1998-05-26 2001-10-21 Matsushita Electronics Corp Capacitor and method for fabricating the same
JP3606738B2 (ja) 1998-06-05 2005-01-05 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
SG77710A1 (en) * 1998-09-09 2001-01-16 Tokuyama Corp Photoresist ashing residue cleaning agent
TW574634B (en) * 1998-11-13 2004-02-01 Kao Corp Stripping composition for resist
TW546553B (en) * 1998-12-25 2003-08-11 Tokyo Ohka Kogyo Co Ltd Photoresist stripping liquid composition and a method of stripping photoresists using the same
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
KR100319881B1 (ko) 1999-02-03 2002-01-10 윤종용 집적 회로 기판 표면의 불순물을 제거하기 위한 세정 수용액 및 이를 이용한 세정 방법
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6673757B1 (en) * 2000-03-22 2004-01-06 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6274504B2 (en) * 1999-06-15 2001-08-14 Advanced Micro Devices, Inc. Minimizing metal corrosion during post metal solvent clean
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6200940B1 (en) * 1999-07-19 2001-03-13 Napier International Technologies, Inc. Paint stripper compositions
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
WO2001021750A1 (fr) * 1999-09-24 2001-03-29 Tokuyama Corporation Detergent
JP2001100436A (ja) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6361712B1 (en) 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6123088A (en) * 1999-12-20 2000-09-26 Chartered Semiconducotor Manufacturing Ltd. Method and cleaner composition for stripping copper containing residue layers
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
US6207350B1 (en) * 2000-01-18 2001-03-27 Headway Technologies, Inc. Corrosion inhibitor for NiCu for high performance writers
US6531436B1 (en) 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
DE60108286T2 (de) 2000-03-27 2005-12-29 Shipley Co., L.L.C., Marlborough Entfernungsmittel für Polymer
EP1277830A4 (en) * 2000-04-26 2004-08-04 Daikin Ind Ltd DETERGENT COMPOSITION
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
JP2002075993A (ja) * 2000-06-15 2002-03-15 Mitsubishi Electric Corp 半導体装置の製造方法
KR20010113396A (ko) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6777380B2 (en) 2000-07-10 2004-08-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
KR20020019813A (ko) * 2000-09-07 2002-03-13 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버조성물
JP4496631B2 (ja) * 2000-09-27 2010-07-07 富士通株式会社 電子デバイスの製造方法
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
JP4525885B2 (ja) 2001-01-12 2010-08-18 三菱瓦斯化学株式会社 フォトレジスト用現像液及びフォトレジストの現像方法
JP4689855B2 (ja) * 2001-03-23 2011-05-25 イーケーシー テクノロジー，インコーポレイティド 残渣剥離剤組成物およびその使用方法
JP2002303993A (ja) * 2001-04-04 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3403187B2 (ja) 2001-08-03 2003-05-06 東京応化工業株式会社 ホトレジスト用剥離液
TWI297102B (en) 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
JP4639567B2 (ja) * 2001-09-28 2011-02-23 三菱瓦斯化学株式会社 フォトレジスト剥離液組成物
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
KR100569533B1 (ko) * 2001-10-25 2006-04-07 주식회사 하이닉스반도체 포토레지스트 세정용 조성물
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4443864B2 (ja) 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
DE10331033B4 (de) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
WO2004016827A1 (fr) * 2002-08-19 2004-02-26 Merk-Kanto Advanced Chemical Ltd. Solution decapante
CN1678961B (zh) * 2002-08-22 2010-05-05 大金工业株式会社 剥离液
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
TWI295076B (en) * 2002-09-19 2008-03-21 Dongwoo Fine Chem Co Ltd Washing liquid for semiconductor substrate and method of producing semiconductor device
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
JP2004277576A (ja) * 2003-03-17 2004-10-07 Daikin Ind Ltd エッチング用又は洗浄用の溶液の製造法
KR100543457B1 (ko) * 2003-06-02 2006-01-23 삼성전자주식회사 반도체 공정에서 사용되는 부식방지제를 포함하는 세정액
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
US6946396B2 (en) * 2003-10-30 2005-09-20 Nissan Chemical Indusries, Ltd. Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer
EP1690135A4 (en) * 2003-12-02 2007-05-09 Advanced Tech Materials METHOD AND CHEMICAL FOR REMOVING PHOTOSENSITIVE RESIN, ANTI-REFLECTIVE COATING OR FILLING MATERIAL
US8030263B2 (en) * 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
TWI300580B (en) * 2004-11-04 2008-09-01 Nec Lcd Technologies Ltd Method of processing substrate and chemical used in the same (1)
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
WO2006081406A1 (en) 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7682458B2 (en) * 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
EP1853973A1 (en) * 2005-02-25 2007-11-14 Ekc Technology, Inc. Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material
JP4988165B2 (ja) 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
JP2008546036A (ja) * 2005-06-07 2008-12-18 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 金属および誘電体相溶性の犠牲反射防止コーティング浄化および除去組成物
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
CN101356629B (zh) 2005-11-09 2012-06-06 高级技术材料公司 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法
US7534753B2 (en) 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
US20080234162A1 (en) * 2007-03-21 2008-09-25 General Chemical Performance Products Llc Semiconductor etch residue remover and cleansing compositions
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5125636B2 (ja) * 2008-03-11 2013-01-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP5206177B2 (ja) * 2008-07-09 2013-06-12 三菱瓦斯化学株式会社 レジスト剥離液組成物およびそれを用いた半導体素子の製造方法
CN102138202B (zh) * 2008-08-05 2015-11-25 三菱瓦斯化学株式会社 残渣剥离液组合物及使用其的半导体元件的洗涤方法
KR101752684B1 (ko) 2008-10-21 2017-07-04 엔테그리스, 아이엔씨. 구리 세척 및 보호 조성물
JP2013032473A (ja) * 2011-07-29 2013-02-14 Mitsuhiro Kawada 水系洗浄剤
JP5871562B2 (ja) 2011-11-01 2016-03-01 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
JP6157081B2 (ja) 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
CN103019051B (zh) 2012-12-07 2015-11-25 京东方科技集团股份有限公司 一种抗蚀剂剥离液
JP6776125B2 (ja) * 2013-12-20 2020-10-28 インテグリス・インコーポレーテッド イオン注入レジストの除去のための非酸化性の強酸の使用
JP6231423B2 (ja) 2014-04-09 2017-11-15 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
JP6681750B2 (ja) 2016-03-04 2020-04-15 東京応化工業株式会社 洗浄液及び洗浄方法
US10920179B2 (en) 2016-11-10 2021-02-16 Tokyo Ohka Kogyo Co., Ltd. Cleaning solution and method for cleaning substrate
CA3039238A1 (en) * 2019-04-05 2020-10-05 Fluid Energy Group Ltd. Novel inhibited hydrofluoric acid composition
CN114196405A (zh) * 2021-12-30 2022-03-18 广东长兴半导体科技有限公司 一种废ic取晶圆的药水及其制备工艺与应用
CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4165295A (en) * 1976-10-04 1979-08-21 Allied Chemical Corporation Organic stripping compositions and method for using same
US4215005A (en) * 1978-01-30 1980-07-29 Allied Chemical Corporation Organic stripping compositions and method for using same
US4171240A (en) * 1978-04-26 1979-10-16 Western Electric Company, Inc. Method of removing a cured epoxy from a metal surface
SU777887A1 (ru) * 1978-07-25 1980-11-07 Предприятие П/Я Г-4377 Раствор дл травлени резистивных сплавов
JPS6488546A (en) 1987-09-30 1989-04-03 Fujitsu Ltd Method for exposing thick film resist
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
JP2829341B2 (ja) * 1990-01-08 1998-11-25 日本電信電話株式会社 レジスト剥離液
JP2581268B2 (ja) * 1990-05-22 1997-02-12 日本電気株式会社 半導体基板の処理方法
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
DE69333877T2 (de) * 1992-07-09 2006-06-14 Ekc Technology Inc Reinigungsmittelzusammensetzung, das einem Redox Aminverbindung enthält
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5376236A (en) * 1993-10-29 1994-12-27 At&T Corp. Process for etching titanium at a controllable rate
JP3264405B2 (ja) * 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
JP3074634B2 (ja) * 1994-03-28 2000-08-07 三菱瓦斯化学株式会社 フォトレジスト用剥離液及び配線パターンの形成方法
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
JP3255551B2 (ja) 1995-01-31 2002-02-12 東京応化工業株式会社 レジスト用剥離液組成物
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674300B1 (ko) * 2005-10-07 2007-01-24 삼성전기주식회사 리지드-플렉시블 인쇄회로기판의 제조방법

Also Published As

Publication number Publication date
EP0773480B1 (en) 2002-04-24
JP3236220B2 (ja) 2001-12-10
DE69620848T2 (de) 2002-11-14
JPH09197681A (ja) 1997-07-31
TW439018B (en) 2001-06-07
KR100222513B1 (ko) 1999-10-01
US5905063A (en) 1999-05-18
DE69620848D1 (de) 2002-05-29
EP0773480A1 (en) 1997-05-14
US5792274A (en) 1998-08-11

Similar Documents

Publication Publication Date Title
KR970028873A (ko) 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법
US4592787A (en) Composition useful for stripping photoresist polymers and method
US4395479A (en) Stripping compositions and methods of stripping resists
US4428871A (en) Stripping compositions and methods of stripping resists
KR970016836A (ko) 포토레지스트용 박리액 조성물 및 이를 사용한 포토레지스트 박리 방법
US4401748A (en) Stripping compositions and methods of stripping resists
CA1194764A (en) Stripping compositions and methods of stripping resists
US5988186A (en) Aqueous stripping and cleaning compositions
JPH0143948B2 (ko)
JP2001520118A5 (ko)
KR950018340A (ko) 히드록실아민 및 알카놀아민을 포함하는 수성 스트립핑 조성물 및 그 사용방법
KR101668126B1 (ko) 포토레지스트 박리제 조성물 및 포토레지스트 박리 방법
IL107263A (en) Photorosist removal preparations containing alkali, which cause corrosion of metal with cross-resin resins or mines.
JPH07295240A (ja) 非腐食性フォトレジスト剥離用組成物
KR20070114038A (ko) 포토레지스트용 스트리퍼 조성물
KR100785383B1 (ko) 포토레지스트 현상액
JP2001183850A (ja) 剥離剤組成物
KR950000238B1 (ko) 기판의 내식막의 제막조성물 및 제거법
JP3316078B2 (ja) レジスト剥離液
EP0116343B1 (en) Photoresist stripper composition and method of use
JPS6026945A (ja) ストリツピング組成物及びレジストをストリツピングする方法
KR101213731B1 (ko) 포토레지스트용 스트리퍼 조성물
JP4470328B2 (ja) レジスト剥離剤
JP4165209B2 (ja) レジスト剥離剤
JPS616827A (ja) フオトレジストのストリツパー

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130621

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20140626

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20150618

Year of fee payment: 17

EXPY Expiration of term