KR970028873A - 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 - Google Patents

내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 Download PDF

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KR970028873A
KR970028873A KR1019960053572A KR19960053572A KR970028873A KR 970028873 A KR970028873 A KR 970028873A KR 1019960053572 A KR1019960053572 A KR 1019960053572A KR 19960053572 A KR19960053572 A KR 19960053572A KR 970028873 A KR970028873 A KR 970028873A
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마사히토 다나베
가즈마사 와키야
마사카즈 고바야시
도시마사 나카야마
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나카네 히사시
도쿄 오카 고교 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)

Abstract

본 발명은 (a) 불화수소산과 금속 비함유 염기와의 염, (b) 수용성 유기용매, (c) 물 및 임의의 (d) 내부식제를 포함하는 pH 5 내지 8의 내식막용 박리액 조성물에 관한 것이다. 내식막을 박리시키는 방법은 (1) 금속 필름을 갖는 기판상에 내식막층을 형성하는 단계, (2) 마스크 패턴을 통해 내식막층을 노광시키고, 내식막층을 현상하여 내식막 패턴을 형성하는 단계 및 (3) 마스크로서 내식막 패턴을 사용하여 기판을 건식-에칭시키고, 불필요한 내식막 및 변형된 내식막 필름을 박리액 조성물로 박리시키는 단계를 포함한다.

Description

내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (18)

  1. (a) 불화수소산과 금속 비함유 염기와의 염, (b) 수용성 유기 용매 및 (c) 물을 포함하는, pH 5 내지 8의 내식막용 박리액 조성물.
  2. 제1항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 30 내지 90중량%이며 그 나머지가 성분(c)인 내식막용 박리액 조성물.
  3. 제1항에 있어서, 성분 (d)로서 내부식제를 추가로 포함하는 내식막용 박리액 조성물.
  4. 제3항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 40 내지 80중량%이며 성분 (d)의 함량이 0.5 내지 15중량%이고 그 나머지가 성분 (c)인 내식막용 박리액 조성물.
  5. 제1항에 있어서, 성분 (a)가 하이드로실아민, 1급, 2급 또는 3급 지방족, 지환족, 방향족 및 헤테로사이클릭 아민, 암모니아수 및 탄소수 1 내지 4의 저급 알킬 4급 암모늄염 그룹중에서 선택된 하나 이상의 금속 비함유 염기와 불화수소산과의 염인 내식막용 박리액 조성물.
  6. 제5항에 있어서, 성분 (a)가 불화암모늄인 내식막용 박리액 조성물.
  7. 제1항에 있어서, 성분 (b)가 디에틸 설폭사이드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, 1,3-디메딜-2-이미다졸리디논, 에틸렌 글리콜 및 디에틸렌 글리콜 모노부틸 에테르중에서 선택된 하나 이상의 성분인 내식막용 박리액 조성물.
  8. 제7항에 있어서, 성분 (b)가 에틸렌 글리콜 10중량% 이상을 포함하는 수용성 유기 용액인 내식막용 박리액 조성물.
  9. 제3항에 있어서, 성분 (d)가 방향족 하이드록실 화합물, 아세틸렌 알콜, 카복실 그룹-함유 유기 화합물 및 이의 무수물, 트리아졸 화합물 및 당류중에서 선택된 하나 이상의 성분인 내식막용 박리액 조성물.
  10. (1) 금속 필름을 갖는 기판상에 내식막 층을 형성시키는 단계, (2) 마스크 패턴을 통해 내식막 층을 노광시킨 후, 내식막층을 현상하여 내식막 패턴을 형성하는 단계 및 (3) 마스크로서 내식막 패턴을 사용하여 기판을 건식-에칭시킨 후, 불필요한 내식막 및 변형된 내식막 필름을, (a) 금속 비함유 염기와 불화수소산과의 염, (b) 수용성 유기 용매 및 (c) 물을 포함하는 pH 5 내지 8의 내식막용 박리액 조성물로 박리시키는 단계를 포함하는, 내식막 박리방법.
  11. 제10항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 30 내지 90중량%이며 그 나머지가 성분 (c)인 방법.
  12. 제10항에 있어서, 내식막용 박리액 조성물이 성분 (d)로서 내부식제를 추가로 포함하는 방법.
  13. 제12항에 있어서, 성분 (a)의 함량이 0.2 내지 8중량%이고 성분 (b)의 함량이 40 내지 80중량%이며 성분 (d)의 함량이 0.5 내지 15중량%이고 그 나머지가 성분 (c)인 방법.
  14. 제10항에 있어서, 성분 (a)가 하이드록실아민, 1급, 2급 또는 3급 지방족, 지환족, 방향족 및 헤테로사이클릭 아민, 암모니아수 및 탄소수 1 내지 4의 저급 알킬 4급 암모늄염 그룹중에서 선택된 하나 이상의 금속 비함유 염기와 불화수소산과의 염인 방법.
  15. 제10항에 있어서, 성분 (a)가 불화암모늄인 방법.
  16. 제10항에 있어서, 성분 (b)가 디에틸 설폭사이드, N,N-디메틸포름아미드, N,N-디메틸아세트아미드, N-메틸-2-피롤리돈, 1,3-디에틸-2-이미다졸리디논, 에틸렌 글리콜 및 디에틸렌 글리콜 모노부틸 에테르중에서 선택된 하나 이상의 성분인 방법.
  17. 제16항에 있어서, 성분 (b)가 에틸렌 글리콜 10중량% 이상을 포함하는 수용성 유기 용매인 방법.
  18. 제12항에 있어서, 성분 (d)가 방향족 하이드록실 화합물, 아세틸렌 알콜, 카복실 그룹-함유 유기 화합물 및 이의 무수물, 트리아졸 화합물 및 당류중에서 선택된 하나 이상의 성분인 방법.
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019960053572A 1995-11-13 1996-11-13 내식막용 박리액 조성물 및 이를 사용한 내식막 박리 방법 KR100222513B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31703595 1995-11-13
JP95-317035 1995-11-13
JP17987296A JP3236220B2 (ja) 1995-11-13 1996-06-21 レジスト用剥離液組成物
JP96-179872 1996-06-21

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KR970028873A true KR970028873A (ko) 1997-06-24
KR100222513B1 KR100222513B1 (ko) 1999-10-01

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US (2) US5792274A (ko)
EP (1) EP0773480B1 (ko)
JP (1) JP3236220B2 (ko)
KR (1) KR100222513B1 (ko)
DE (1) DE69620848T2 (ko)
TW (1) TW439018B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674300B1 (ko) * 2005-10-07 2007-01-24 삼성전기주식회사 리지드-플렉시블 인쇄회로기판의 제조방법

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US7144849B2 (en) * 1993-06-21 2006-12-05 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
JP3755776B2 (ja) * 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5968848A (en) * 1996-12-27 1999-10-19 Tokyo Ohka Kogyo Co., Ltd. Process for treating a lithographic substrate and a rinse solution for the treatment
JPH10239865A (ja) * 1997-02-24 1998-09-11 Jsr Corp ネガ型フォトレジスト用剥離液組成物
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
JPH1167632A (ja) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc 半導体装置用洗浄剤
KR100510446B1 (ko) * 1998-01-07 2005-10-21 삼성전자주식회사 반도체 장치의 콘택홀 세정방법
US6231677B1 (en) * 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
US6432209B2 (en) * 1998-03-03 2002-08-13 Silicon Valley Chemlabs Composition and method for removing resist and etching residues using hydroxylazmmonium carboxylates
TW460748B (en) * 1998-05-26 2001-10-21 Matsushita Electronics Corp Capacitor and method for fabricating the same
JP3606738B2 (ja) 1998-06-05 2005-01-05 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6440326B1 (en) * 1998-08-13 2002-08-27 Mitsubishi Gas Chemical Company, Inc. Photoresist removing composition
SG77710A1 (en) * 1998-09-09 2001-01-16 Tokuyama Corp Photoresist ashing residue cleaning agent
US6310020B1 (en) * 1998-11-13 2001-10-30 Kao Corporation Stripping composition for resist
TW546553B (en) * 1998-12-25 2003-08-11 Tokyo Ohka Kogyo Co Ltd Photoresist stripping liquid composition and a method of stripping photoresists using the same
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
KR100319881B1 (ko) 1999-02-03 2002-01-10 윤종용 집적 회로 기판 표면의 불순물을 제거하기 위한 세정 수용액 및 이를 이용한 세정 방법
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
US6248704B1 (en) 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6673757B1 (en) * 2000-03-22 2004-01-06 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6274504B2 (en) * 1999-06-15 2001-08-14 Advanced Micro Devices, Inc. Minimizing metal corrosion during post metal solvent clean
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
US6200940B1 (en) 1999-07-19 2001-03-13 Napier International Technologies, Inc. Paint stripper compositions
JP3410403B2 (ja) 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
CN1167789C (zh) * 1999-09-24 2004-09-22 德山株式会社 洗涤剂
JP2001100436A (ja) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US6361712B1 (en) 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6123088A (en) * 1999-12-20 2000-09-26 Chartered Semiconducotor Manufacturing Ltd. Method and cleaner composition for stripping copper containing residue layers
JP2001183849A (ja) * 1999-12-27 2001-07-06 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
US6207350B1 (en) * 2000-01-18 2001-03-27 Headway Technologies, Inc. Corrosion inhibitor for NiCu for high performance writers
US6531436B1 (en) 2000-02-25 2003-03-11 Shipley Company, L.L.C. Polymer removal
EP1138726B1 (en) 2000-03-27 2005-01-12 Shipley Company LLC Polymer remover
US6831048B2 (en) 2000-04-26 2004-12-14 Daikin Industries, Ltd. Detergent composition
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
KR100363271B1 (ko) * 2000-06-12 2002-12-05 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
JP2002075993A (ja) * 2000-06-15 2002-03-15 Mitsubishi Electric Corp 半導体装置の製造方法
KR20010113396A (ko) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
WO2002004233A1 (en) * 2000-07-10 2002-01-17 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
KR20020019813A (ko) * 2000-09-07 2002-03-13 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버조성물
JP4496631B2 (ja) * 2000-09-27 2010-07-07 富士通株式会社 電子デバイスの製造方法
JP3738996B2 (ja) * 2002-10-10 2006-01-25 東京応化工業株式会社 ホトリソグラフィー用洗浄液および基板の処理方法
JP4525885B2 (ja) 2001-01-12 2010-08-18 三菱瓦斯化学株式会社 フォトレジスト用現像液及びフォトレジストの現像方法
JP4689855B2 (ja) * 2001-03-23 2011-05-25 イーケーシー テクノロジー，インコーポレイティド 残渣剥離剤組成物およびその使用方法
JP2002303993A (ja) * 2001-04-04 2002-10-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20030022800A1 (en) * 2001-06-14 2003-01-30 Peters Darryl W. Aqueous buffered fluoride-containing etch residue removers and cleaners
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3403187B2 (ja) 2001-08-03 2003-05-06 東京応化工業株式会社 ホトレジスト用剥離液
TWI297102B (en) 2001-08-03 2008-05-21 Nec Electronics Corp Removing composition
JP4639567B2 (ja) * 2001-09-28 2011-02-23 三菱瓦斯化学株式会社 フォトレジスト剥離液組成物
JP2003129089A (ja) * 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
KR100569533B1 (ko) * 2001-10-25 2006-04-07 주식회사 하이닉스반도체 포토레지스트 세정용 조성물
US20030171239A1 (en) * 2002-01-28 2003-09-11 Patel Bakul P. Methods and compositions for chemically treating a substrate using foam technology
US6773873B2 (en) 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
JP2004029346A (ja) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc レジスト剥離液組成物
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
DE10331033B4 (de) * 2002-07-12 2010-04-29 Ekc Technology K.K. R&D Business Park Bldg. D-3F, Kawasaki Herstellungsverfahren einer Halbleitervorrichtung und Reinigungszusammensetzung dafür
JP4443864B2 (ja) 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
JP2005535784A (ja) * 2002-08-19 2005-11-24 伊默克化學科技股▲ふん▼有限公司 清浄液
AU2003257636A1 (en) * 2002-08-22 2004-03-11 Daikin Industries, Ltd. Removing solution
JP4282054B2 (ja) * 2002-09-09 2009-06-17 東京応化工業株式会社 デュアルダマシン構造形成プロセスに用いられる洗浄液および基板の処理方法
TWI295076B (en) * 2002-09-19 2008-03-21 Dongwoo Fine Chem Co Ltd Washing liquid for semiconductor substrate and method of producing semiconductor device
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
TW200413522A (en) * 2002-11-08 2004-08-01 Sumitomo Chemical Co Washing liquid for semiconductor substrate
JP2004277576A (ja) * 2003-03-17 2004-10-07 Daikin Ind Ltd エッチング用又は洗浄用の溶液の製造法
KR100543457B1 (ko) * 2003-06-02 2006-01-23 삼성전자주식회사 반도체 공정에서 사용되는 부식방지제를 포함하는 세정액
US20050089489A1 (en) * 2003-10-22 2005-04-28 Carter Melvin K. Composition for exfoliation agent effective in removing resist residues
US7192910B2 (en) * 2003-10-28 2007-03-20 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US6946396B2 (en) * 2003-10-30 2005-09-20 Nissan Chemical Indusries, Ltd. Maleic acid and ethylene urea containing formulation for removing residue from semiconductor substrate and method for cleaning wafer
US7888301B2 (en) * 2003-12-02 2011-02-15 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method
US8030263B2 (en) 2004-07-01 2011-10-04 Air Products And Chemicals, Inc. Composition for stripping and cleaning and use thereof
US9217929B2 (en) * 2004-07-22 2015-12-22 Air Products And Chemicals, Inc. Composition for removing photoresist and/or etching residue from a substrate and use thereof
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
TWI299513B (en) * 2004-11-04 2008-08-01 Nec Lcd Technologies Ltd Method of processing substrate and chemical used in the same (1)
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US7923423B2 (en) 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
WO2006081406A1 (en) 2005-01-27 2006-08-03 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7888302B2 (en) * 2005-02-03 2011-02-15 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
US7682458B2 (en) * 2005-02-03 2010-03-23 Air Products And Chemicals, Inc. Aqueous based residue removers comprising fluoride
CN101228481B (zh) * 2005-02-25 2012-12-05 Ekc技术公司 从包括铜和低k电介体的基片上除去抗蚀剂、蚀刻残余物和氧化铜的方法
JP4988165B2 (ja) 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
TWI622639B (zh) * 2005-06-07 2018-05-01 恩特葛瑞斯股份有限公司 金屬及介電相容犠牲抗反射塗層清洗及移除組成物
TWI339780B (en) * 2005-07-28 2011-04-01 Rohm & Haas Elect Mat Stripper
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
EP1946358A4 (en) 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS WITH LOW DIELECTRICITY CONSTANT MATERIALS
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
US7879783B2 (en) * 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
US20080234162A1 (en) * 2007-03-21 2008-09-25 General Chemical Performance Products Llc Semiconductor etch residue remover and cleansing compositions
KR20100082012A (ko) * 2007-11-16 2010-07-15 이케이씨 테크놀로지, 인코포레이티드 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물
JP5125636B2 (ja) * 2008-03-11 2013-01-23 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
JP5206177B2 (ja) * 2008-07-09 2013-06-12 三菱瓦斯化学株式会社 レジスト剥離液組成物およびそれを用いた半導体素子の製造方法
KR20110063632A (ko) * 2008-08-05 2011-06-13 미츠비시 가스 가가쿠 가부시키가이샤 잔사 박리액 조성물 및 그것을 이용한 반도체 소자의 세정 방법
US9074170B2 (en) 2008-10-21 2015-07-07 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
JP2013032473A (ja) * 2011-07-29 2013-02-14 Mitsuhiro Kawada 水系洗浄剤
JP5871562B2 (ja) 2011-11-01 2016-03-01 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
JP6157081B2 (ja) 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
CN103019051B (zh) * 2012-12-07 2015-11-25 京东方科技集团股份有限公司 一种抗蚀剂剥离液
TWI662379B (zh) * 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 移除離子植入抗蝕劑之非氧化強酸類之用途
JP6231423B2 (ja) 2014-04-09 2017-11-15 東京応化工業株式会社 フォトリソグラフィ用剥離液及びパターン形成方法
JP6681750B2 (ja) 2016-03-04 2020-04-15 東京応化工業株式会社 洗浄液及び洗浄方法
US10920179B2 (en) 2016-11-10 2021-02-16 Tokyo Ohka Kogyo Co., Ltd. Cleaning solution and method for cleaning substrate
CA3039238A1 (en) * 2019-04-05 2020-10-05 Fluid Energy Group Ltd. Novel inhibited hydrofluoric acid composition
CN114196405A (zh) * 2021-12-30 2022-03-18 广东长兴半导体科技有限公司 一种废ic取晶圆的药水及其制备工艺与应用
CN115161032A (zh) * 2022-07-05 2022-10-11 北京师范大学 一种适用于单晶硅片的腐蚀溶液及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890176A (en) * 1972-08-18 1975-06-17 Gen Electric Method for removing photoresist from substrate
US4165295A (en) * 1976-10-04 1979-08-21 Allied Chemical Corporation Organic stripping compositions and method for using same
US4215005A (en) * 1978-01-30 1980-07-29 Allied Chemical Corporation Organic stripping compositions and method for using same
US4171240A (en) * 1978-04-26 1979-10-16 Western Electric Company, Inc. Method of removing a cured epoxy from a metal surface
SU777887A1 (ru) * 1978-07-25 1980-11-07 Предприятие П/Я Г-4377 Раствор дл травлени резистивных сплавов
JPS6488546A (en) 1987-09-30 1989-04-03 Fujitsu Ltd Method for exposing thick film resist
EP0376252B1 (en) * 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Method of removing an oxide film on a substrate
JP2829341B2 (ja) * 1990-01-08 1998-11-25 日本電信電話株式会社 レジスト剥離液
JP2581268B2 (ja) * 1990-05-22 1997-02-12 日本電気株式会社 半導体基板の処理方法
JPH05259066A (ja) * 1992-03-13 1993-10-08 Texas Instr Japan Ltd ポジ型フォトレジスト用剥離液および半導体装置の製造方法
JP3048207B2 (ja) * 1992-07-09 2000-06-05 イー．ケー．シー．テクノロジー．インコーポレイテッド 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法
US5308745A (en) * 1992-11-06 1994-05-03 J. T. Baker Inc. Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5376236A (en) * 1993-10-29 1994-12-27 At&T Corp. Process for etching titanium at a controllable rate
JP3264405B2 (ja) * 1994-01-07 2002-03-11 三菱瓦斯化学株式会社 半導体装置洗浄剤および半導体装置の製造方法
JP3074634B2 (ja) * 1994-03-28 2000-08-07 三菱瓦斯化学株式会社 フォトレジスト用剥離液及び配線パターンの形成方法
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
JP3255551B2 (ja) 1995-01-31 2002-02-12 東京応化工業株式会社 レジスト用剥離液組成物
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100674300B1 (ko) * 2005-10-07 2007-01-24 삼성전기주식회사 리지드-플렉시블 인쇄회로기판의 제조방법

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