KR960042983A - 가스전열플라즈마처리장치 - Google Patents

가스전열플라즈마처리장치 Download PDF

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KR960042983A
KR960042983A KR1019960017603A KR19960017603A KR960042983A KR 960042983 A KR960042983 A KR 960042983A KR 1019960017603 A KR1019960017603 A KR 1019960017603A KR 19960017603 A KR19960017603 A KR 19960017603A KR 960042983 A KR960042983 A KR 960042983A
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substrate
heat transfer
gas
plasma processing
processing apparatus
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KR1019960017603A
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KR100212228B1 (ko
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마사키 스즈키
쇼오지 후쿠이
유지 쯔쯔이
시게유키 야마모토
야스오 타나카
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모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
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Publication of KR960042983A publication Critical patent/KR960042983A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 반도체나 액정표시소자(LCD)제조에 사용되는 드라이에칭장치, 스퍼터장치, CVD장치등의 플라즈마처리장치에 관해서 특히 기판의 냉각 또는 가열을 위한 전열수단으로서 가스를 사용한 가스전열플라즈마처리장치에 관한 것으로서, 플라즈마처리가 균일하여 안정되고, 냉각가스량이 적어 제어가 용이하고, 전극의 제작을 용이하게 하는 것을 목적으로 한것이며, 그 구성에 있어서, 진공용기(1)와, 진공배기펌프(2)와, 반응가스공급구(4)와, 상부전극(3) 및 하부전극(7)과, 하부전극(7)에 피처리기판(6)을 억누르는 클램프링(17)과, 하부전극(7)에 고주파전력을 공급하는 고주파전원(11)과, 피처리기판(6) 뒷면과 하부전극(7)과의 사이에 전열가스를 충만시키는 전열가스공급수단(13)을 가진 플라즈마처리장치에 있어서, 하부전극(7)의 기판얹어 놓는면(15)을 소정의 등분포압력을 받는 기판의 만곡곡면형상으로 하고, 가스압력을 거의 그 소정압력 또는 그 이하로 한것을 특징으로 한 것이다.

Description

가스전열플라즈마처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 가스전열(傳熱)플라즈마처리장치의 일실시예의 종단면도.

Claims (3)

  1. 진공용기와, 진공배기수단과, 반응가스공급수단과, 적어도 1쌍의 전극과, 한쪽의 전극에 피처리기판을 억누르는 기판클램프수단과, 적어도 한쪽의 전극으로의 고주파전력공급수단과, 피처리기판뒷면과 전극과의 사이에 전열가스를 충만시키는 전열가스공급수단을 가진 플라즈마처리장치에 있어서, 전극의 피처리기판얹어놓는면을 소정의 등분포압력을 받는 피처리기판의 만곡곡면형상으로하고, 전열가스압력을 거의 그 소정압력 또는 그 이하로 한 것을 특징으로 하는 가스전열플라즈마처리장치.
  2. 제1항에 있어서, 전극의 피처리기판얹어놓는 면을, 포락면이 소정의 등분포압력을 받는 피처리기판의 만곡곡면인 계단형상얹어놓는 면으로 한 것을 특징으로 하는 가스전열플라즈마처리장치.
  3. 제1항 또는 제2항에 있어서, 기판클램프수단을, 일평면상의 4각형의 4변에 상당하는 4개의 선분으로 피처리기판의 4변에 접하는 4각형프레임형상으로 형성하고, 전극의 피처리기판얹어놓는 면을 소정의 등분포압력을 받는 4각형판의 만곡곡면으로 한 것을 특징으로 하는 유리전열플라즈마처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960017603A 1995-05-24 1996-05-23 가스전열플라즈마처리장치 KR100212228B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-124815 1995-05-24
JP12481595A JP3220619B2 (ja) 1995-05-24 1995-05-24 ガス伝熱プラズマ処理装置

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KR960042983A true KR960042983A (ko) 1996-12-21
KR100212228B1 KR100212228B1 (ko) 1999-08-02

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US (1) US5695566A (ko)
JP (1) JP3220619B2 (ko)
KR (1) KR100212228B1 (ko)
CN (1) CN1090816C (ko)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6786998B1 (en) * 1995-12-29 2004-09-07 Cypress Semiconductor Corporation Wafer temperature control apparatus and method
US5753566A (en) * 1996-05-23 1998-05-19 Taiwan Semiconductor Manufactured Company, Ltd. Method of spin-on-glass etchback using hot backside helium
US5942039A (en) * 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
JPH1126432A (ja) * 1997-06-30 1999-01-29 Matsushita Electric Ind Co Ltd ガス伝熱形プラズマ処理装置
US6167837B1 (en) * 1998-01-15 2001-01-02 Torrex Equipment Corp. Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
JPH11111830A (ja) * 1997-10-07 1999-04-23 Tokyo Electron Ltd 静電吸着装置および静電吸着方法、ならびにそれを用いた処理装置および処理方法
JPH11154662A (ja) * 1997-11-20 1999-06-08 Seiko Instruments Inc 半導体製造装置
US6184157B1 (en) * 1998-06-01 2001-02-06 Sharp Laboratories Of America, Inc. Stress-loaded film and method for same
US6406590B1 (en) * 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
JP3598227B2 (ja) * 1998-12-08 2004-12-08 松下電器産業株式会社 プラズマ処理装置及び方法
JP3595853B2 (ja) 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
JP3632542B2 (ja) * 2000-01-26 2005-03-23 松下電器産業株式会社 プラズマ処理装置
JP2001214277A (ja) * 2000-01-31 2001-08-07 Canon Inc 堆積膜形成装置および堆積膜形成方法
JP2002083800A (ja) * 2000-09-06 2002-03-22 Asahi Glass Co Ltd プラズマ処理装置
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
JP3788272B2 (ja) * 2001-06-04 2006-06-21 松下電器産業株式会社 プラズマ処理装置
US6461155B1 (en) * 2001-07-31 2002-10-08 Novellus Systems, Inc. Method and apparatus for heating substrates in supercritical fluid reactor
US7232591B2 (en) * 2002-04-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Method of using an adhesive for temperature control during plasma processing
CN100418187C (zh) * 2003-02-07 2008-09-10 东京毅力科创株式会社 等离子体处理装置、环形部件和等离子体处理方法
DE602004007017T2 (de) * 2003-09-10 2008-02-07 Oc Oerlikon Balzers Ag Spannungsungleichförmigkeits-kompensationsverfahren für einen hochfrequenz-plasmareaktor zur behandlung rechteckiger grossflächiger substrate
US20060005771A1 (en) * 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
KR100716456B1 (ko) 2004-12-29 2007-05-10 주식회사 에이디피엔지니어링 플라즈마 처리장치
US7560144B2 (en) * 2005-03-22 2009-07-14 Asm Japan K.K. Method of stabilizing film quality of low-dielectric constant film
JP4654738B2 (ja) * 2005-04-05 2011-03-23 パナソニック株式会社 プラズマ処理装置
US20100270004A1 (en) * 2005-05-12 2010-10-28 Landess James D Tailored profile pedestal for thermo-elastically stable cooling or heating of substrates
JP5035919B2 (ja) * 2006-09-08 2012-09-26 株式会社アルバック ドライエッチング方法
US7960297B1 (en) 2006-12-07 2011-06-14 Novellus Systems, Inc. Load lock design for rapid wafer heating
US8052419B1 (en) 2007-11-08 2011-11-08 Novellus Systems, Inc. Closed loop temperature heat up and control utilizing wafer-to-heater pedestal gap modulation
TWI501704B (zh) * 2008-02-08 2015-09-21 Lam Res Corp 於電漿處理系統中用以改變面積比之方法與裝置
JP2012146935A (ja) * 2011-01-14 2012-08-02 Sharp Corp ウエハ処理装置
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US9130484B2 (en) * 2011-10-19 2015-09-08 Sri International Vacuum augmented electroadhesive device
KR20140119726A (ko) 2012-01-06 2014-10-10 노벨러스 시스템즈, 인코포레이티드 적응형 열 교환 방법 및 균일한 열 교환을 위한 시스템
JP6012995B2 (ja) * 2012-03-27 2016-10-25 芝浦メカトロニクス株式会社 プラズマ処理装置およびプラズマ処理方法
US10361097B2 (en) * 2012-12-31 2019-07-23 Globalwafers Co., Ltd. Apparatus for stressing semiconductor substrates
JP6396409B2 (ja) * 2013-03-15 2018-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｅｐｉプロセスのための均一性調整レンズを有するサセプタ支持シャフト
JP6320812B2 (ja) * 2014-03-19 2018-05-09 株式会社東芝 圧力センサの製造方法、成膜装置及び熱処理装置
CN105097604B (zh) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室
CN106298621A (zh) * 2015-05-28 2017-01-04 北京北方微电子基地设备工艺研究中心有限责任公司 机械卡盘及半导体加工设备
US11008651B2 (en) * 2016-04-11 2021-05-18 Spts Technologies Limited DC magnetron sputtering
CN107403750B (zh) * 2016-05-20 2020-04-28 北京北方华创微电子装备有限公司 基座组件及反应腔室
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
JP6746230B2 (ja) * 2016-12-09 2020-08-26 株式会社ディスコ ウェーハの製造方法
JP6822270B2 (ja) * 2017-03-29 2021-01-27 トヨタ自動車株式会社 成膜装置
US11232971B2 (en) * 2019-12-18 2022-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Workpiece holding mechanism, process system and manufacturing method of semiconductor structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56131931A (en) * 1980-03-19 1981-10-15 Hitachi Ltd Controlling device of wafer temperature
JPS56131930A (en) * 1980-03-19 1981-10-15 Hitachi Ltd Controlling device of wafer temperature
JPS61103530A (ja) * 1984-10-25 1986-05-22 Ulvac Corp 真空処理装置における基板の冷却機構
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
JPH02268427A (ja) * 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマ処理装置
US5013400A (en) * 1990-01-30 1991-05-07 General Signal Corporation Dry etch process for forming champagne profiles, and dry etch apparatus
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
EP0624896B1 (en) * 1993-05-13 1999-09-22 Applied Materials, Inc. Contamination control in plasma contouring the plasma sheath using materials of differing rf impedances

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KR100212228B1 (ko) 1999-08-02
CN1090816C (zh) 2002-09-11
JP3220619B2 (ja) 2001-10-22
CN1138746A (zh) 1996-12-25
US5695566A (en) 1997-12-09
JPH08316215A (ja) 1996-11-29

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