KR940007607B1 - Ito 스퍼터링타아겟의 제조방법 - Google Patents

Ito 스퍼터링타아겟의 제조방법 Download PDF

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Publication number
KR940007607B1
KR940007607B1 KR1019900021078A KR900021078A KR940007607B1 KR 940007607 B1 KR940007607 B1 KR 940007607B1 KR 1019900021078 A KR1019900021078 A KR 1019900021078A KR 900021078 A KR900021078 A KR 900021078A KR 940007607 B1 KR940007607 B1 KR 940007607B1
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KR
South Korea
Prior art keywords
atmosphere
sintering
ito
density
ito sputtering
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019900021078A
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English (en)
Korean (ko)
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KR910014992A (ko
Inventor
코오이찌 나카지마
노리아키 사또오
Original Assignee
가부시기가이샤 저팬에너지
나가지마 카즈나리
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Publication of KR910014992A publication Critical patent/KR910014992A/ko
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Publication of KR940007607B1 publication Critical patent/KR940007607B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1019900021078A 1990-01-08 1990-12-19 Ito 스퍼터링타아겟의 제조방법 Expired - Fee Related KR940007607B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-1210 1990-01-08
JP2001210A JPH03207858A (ja) 1990-01-08 1990-01-08 Ｉｔｏスパッタリングターゲットの製造方法

Publications (2)

Publication Number Publication Date
KR910014992A KR910014992A (ko) 1991-08-31
KR940007607B1 true KR940007607B1 (ko) 1994-08-22

Family

ID=11495106

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900021078A Expired - Fee Related KR940007607B1 (ko) 1990-01-08 1990-12-19 Ito 스퍼터링타아겟의 제조방법

Country Status (4)

Country Link
US (1) US5094787A (enExample)
JP (1) JPH03207858A (enExample)
KR (1) KR940007607B1 (enExample)
DE (1) DE4037733C2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100850011B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 주석 분말의 제조 방법 및ｉｔｏ 타겟재의 제조 방법
KR100850010B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 인듐 분말의 제조방법 및ｉｔｏ 타겟재의 제조방법

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0779005B2 (ja) * 1990-06-19 1995-08-23 住友金属鉱山株式会社 Ｉｔｏ焼結体及びその製造方法
US5480531A (en) * 1991-07-24 1996-01-02 Degussa Aktiengesellschaft Target for cathode sputtering and method of its production
JPH05148638A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツトの製造方法
JPH07100852B2 (ja) * 1991-11-26 1995-11-01 株式会社ジャパンエナジー Ｉｔｏスパッタリングタ−ゲット
JPH05148636A (ja) * 1991-11-26 1993-06-15 Nikko Kyodo Co Ltd Ｉｔｏスパツタリングタ−ゲツト
JP2750483B2 (ja) * 1991-11-26 1998-05-13 株式会社 ジャパンエナジー Ｉｔｏスパッタリングターゲット
JP3004807B2 (ja) * 1992-04-04 2000-01-31 同和鉱業株式会社 高密度ｉｔｏ焼結体の製造方法
DE69303126T2 (de) * 1992-08-19 1996-11-28 Tosoh Corp Verfahren zur Herstellung eines Indiumoxidpulvers verwendbar für einen ITO-Sinterkörper mit hoher Dichte
JPH06158308A (ja) * 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
US5417816A (en) * 1992-12-09 1995-05-23 Nikko Kyodo, Ltd. Process for preparation of indium oxide-tin oxide powder
US5433901A (en) * 1993-02-11 1995-07-18 Vesuvius Crucible Company Method of manufacturing an ITO sintered body
US5580496A (en) * 1993-04-05 1996-12-03 Sumitomo Metal Mining Company Limited Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting
DE4407774C1 (de) * 1994-03-09 1995-04-20 Leybold Materials Gmbh Target für die Kathodenzerstäubung zur Herstellung transparenter, leitfähiger Schichten und Verfahren zu seiner Herstellung
DE4413344A1 (de) * 1994-04-18 1995-10-19 Leybold Materials Gmbh Verfahren zur Herstellung teilreduzierter Indiumoxid-Zinnoxid Targets
DE4413378A1 (de) * 1994-04-19 1995-10-26 Leybold Ag Einrichtung zum Beschichten eines Substrats
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
US6582641B1 (en) 1994-08-25 2003-06-24 Praxair S.T. Technology, Inc. Apparatus and method for making metal oxide sputtering targets
US5656216A (en) * 1994-08-25 1997-08-12 Sony Corporation Method for making metal oxide sputtering targets (barrier powder envelope)
DE19508898A1 (de) * 1995-03-11 1996-09-12 Leybold Materials Gmbh Indiumoxid/Zinnoxid Sputtertarget für die Kathodenzerstäubung
DE19540379C1 (de) * 1995-08-18 1996-09-26 Heraeus Gmbh W C Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets
BR9610397A (pt) * 1995-08-31 1999-12-21 Innovative Sputtering Tech Processo para a fabricação de artigos de liga ito.
NL1004635C2 (nl) * 1995-12-06 1999-01-12 Sumitomo Chemical Co Indiumoxyde-tinoxydepoeders en werkwijze voor het voortbrengen daarvan.
JP3781878B2 (ja) * 1996-10-04 2006-05-31 同和鉱業株式会社 Ｉｔｏ焼結体およびｉｔｏスパッタリングターゲット
JP3931363B2 (ja) * 1996-12-20 2007-06-13 東ソー株式会社 Ｉｔｏ焼結体の製造法
DE19822570C1 (de) * 1998-05-20 1999-07-15 Heraeus Gmbh W C Verfahren zum Herstellen eines Indium-Zinn-Oxid-Formkörpers
US6500225B2 (en) 1998-12-03 2002-12-31 Sumitomo Chemical Company, Limited Method for producing high density indium-tin-oxide sintered body
JP3617345B2 (ja) * 1998-12-09 2005-02-02 株式会社村田製作所 酸化物系セラミック焼結体の製造方法
US6735487B1 (en) * 1999-07-01 2004-05-11 Ods Properties, Inc. Interactive wagering system with promotions
JP2003240861A (ja) * 2002-02-20 2003-08-27 Canon Inc 放射線検出素子、放射線撮像装置及び放射線検出方法
US7833821B2 (en) * 2005-10-24 2010-11-16 Solopower, Inc. Method and apparatus for thin film solar cell manufacturing
US20080073819A1 (en) * 2006-09-25 2008-03-27 Cheng Loong Corporation Method of manufacturing sputtering targets
JP5580972B2 (ja) * 2008-06-06 2014-08-27 デクセリアルズ株式会社 スパッタリング複合ターゲット
JP6198363B1 (ja) * 2016-05-12 2017-09-20 株式会社広築 円筒形スパッタリングターゲット材の焼成装置及び焼成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656006B2 (ja) * 1987-07-17 1994-07-27 沖舘鉄工有限会社 降雪の処理装置
US4833302A (en) * 1988-01-27 1989-05-23 Alpha Industries Apparatus and process for firing ceramics
JPH0811711B2 (ja) * 1988-05-16 1996-02-07 東ソー株式会社 透明導電膜用スパッタリングターゲットの製造方法
US4962071A (en) * 1989-05-01 1990-10-09 Tektronix, Inc. Method of fabricating a sintered body of indium tin oxide
JPH0794345B2 (ja) * 1989-10-06 1995-10-11 住友金属鉱山株式会社 酸化インジウム‐酸化錫焼結体及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100850011B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 주석 분말의 제조 방법 및ｉｔｏ 타겟재의 제조 방법
KR100850010B1 (ko) * 2007-03-19 2008-08-04 희성금속 주식회사 초음파 화학적 반응에 의한 산화 인듐 분말의 제조방법 및ｉｔｏ 타겟재의 제조방법

Also Published As

Publication number Publication date
DE4037733A1 (de) 1991-07-11
JPH0530905B2 (enExample) 1993-05-11
DE4037733C2 (de) 1996-12-19
JPH03207858A (ja) 1991-09-11
KR910014992A (ko) 1991-08-31
US5094787A (en) 1992-03-10

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