KR930011295A - 박막 트랜지스터의 제조방법 - Google Patents

박막 트랜지스터의 제조방법 Download PDF

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KR930011295A
KR930011295A KR1019920020521A KR920020521A KR930011295A KR 930011295 A KR930011295 A KR 930011295A KR 1019920020521 A KR1019920020521 A KR 1019920020521A KR 920020521 A KR920020521 A KR 920020521A KR 930011295 A KR930011295 A KR 930011295A
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thin film
film transistor
manufacturing
laser
amorphous silicon
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KR1019920020521A
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KR100269350B1 (ko
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채기성
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이헌조
주식회사 금성사
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Priority to KR1019920020521A priority Critical patent/KR100269350B1/ko
Publication of KR930011295A publication Critical patent/KR930011295A/ko
Priority to US08/147,635 priority patent/US5432122A/en
Priority to JP29890593A priority patent/JPH07106599A/ja
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Publication of KR100269350B1 publication Critical patent/KR100269350B1/ko

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    • H01L27/1259—Multistep manufacturing methods
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    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

본 발명은 액정표시 소자용 박막 트랜지스터의 제조방법과 관련된 것으로서, 종래에는 이러한 박막 트랜지스터의 제조 공정이 복잡하고 레이저 빔에 의한 선택적 결정화수단을 이용하기 때문에 광결합부분의 존재로 전계 효과이동도가 낮아지는 등의 불리한 문제짐이 많았으나, 본 발명은 박막 트랜지스터 제조시 비정질 실리콘층 성장이후 레이저 처리를 광결함 부분을 오버랩하여 처리하는 방법으로 게이트 금속부의 실리콘층 결정화를 양호히 이를 수 있는 박막 트랜지스터의 제조법을 제공하는데 있다.

Description

박막 트랜지스터의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 본 발명의 비정질실리콘 표면에 레이저빔을 순차 주사하는 방법을 나타낸 도면.
제6도는 본 발명의 게이트 금속에 대한 히트 싱크 효과를 나타낸 단면도와 평면도.
제7도는 본 발명의 결정화에 필요한 레이저 전력을 갖는 상태에서 빔크기를 증가시키는 관계를 설명한 도면.

Claims (7)

  1. 기판(21), 게이트 전극(22), 절연층(23), 비정질실리콘층(24)을 차례로 성장시키고, 상기 비정질실리콘(24)이 성형된 표면에는 레이저 빔을 직접 실린더리컬렌즈(11)의 이용으로 주사하여 비정질실리콘을 재결정 처리하면서 결정의 핵형성이 게이트 전극위에서 부터 일어나고 레이저 빔은 광결함 부분(x)을 고려하여 오버랩부분(y)이 존재하게 주사하거나, 또는 오버랩 부분(y)이 존재하지 않게 처리하는 방법을 특징으로 하는 박막 트랜지스터의 제조방법.
  2. 제1항에 있어서, 재결정화 처리시 레이저 빔이 입사되는 시료(1) 상방에 일정간격으로 프리즘(2)이 다수 배열된 광학계(3)를 이용한 것을 특징으로 하는 박막 트랜지스터의 제조방법.
  3. 제2항에 있어서, 프리즘(2)의 배열은 오버랩부분(y)과 일치함을 특징으로 하는 박막 트랜지스터의 제조방법.
  4. 제1항에 있어서, 상기 비정질실리콘(24)을 레이저로 조사하기 이전에 보호층을 입힌후 처리하는 방법을 특징으로 하는 박막 트랜지스터의 제조방법.
  5. 제1항에 있어서, 상기 박막 트랜지스터의 게이트 전극의 금속을 크롬, 탄탈륨, 탄탈륨합금, 알루미늄 또는 복합층으로 처리하는 방법을 특징으로 하는 박막 트랜지스터의 제조방법.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 레이저빔을 출사하는 레이저 장치의 엑시머레이져, 아르곤레이져, 아그레이져, 루비레이져중 어느 하나로 처리하는 방법을 특징으로 하는 박막 트랜지스터의 제조방법.
  7. 제1항 내지 제5항 중 어느 한 항에 있어서, 박막 트랜지스터의 구조는 듀얼 게이트의 구조로 함을 특징으로하는 박막 트랜지스터의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020521A 1991-11-26 1992-11-03 박막트랜지스터의제조방법 KR100269350B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019920020521A KR100269350B1 (ko) 1991-11-26 1992-11-03 박막트랜지스터의제조방법
US08/147,635 US5432122A (en) 1992-11-03 1993-11-03 Method of making a thin film transistor by overlapping annealing using lasers
JP29890593A JPH07106599A (ja) 1992-11-03 1993-11-04 薄膜トランジスタの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR910021315 1991-11-26
KR91-21315 1991-11-26
KR1019920020521A KR100269350B1 (ko) 1991-11-26 1992-11-03 박막트랜지스터의제조방법

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KR930011295A true KR930011295A (ko) 1993-06-24
KR100269350B1 KR100269350B1 (ko) 2000-10-16

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US (1) US5432122A (ko)
JP (1) JPH07106599A (ko)
KR (1) KR100269350B1 (ko)

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