JPS60109282A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60109282A
JPS60109282A JP21687183A JP21687183A JPS60109282A JP S60109282 A JPS60109282 A JP S60109282A JP 21687183 A JP21687183 A JP 21687183A JP 21687183 A JP21687183 A JP 21687183A JP S60109282 A JPS60109282 A JP S60109282A
Authority
JP
Japan
Prior art keywords
crystallized
layer
gate
amorphous
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21687183A
Other languages
English (en)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP21687183A priority Critical patent/JPS60109282A/ja
Publication of JPS60109282A publication Critical patent/JPS60109282A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78666—Amorphous silicon transistors with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明はアモルファス半導体膜を用いた半導体装置のｔ
Ｉ′４造に関する。
従来、アモルファス半導体膜による半導体装置は、−を
壬ルファス半導体膜単膜を用いるのが通例であ一１ｔｃ
。
しか；−１，Ｌ記従来によると、アモルファス半導体膜
り）移動変が小ｔｒるために１．＋！ｉ速化できないと
いう欠点があった。
本発明は、かかる従来技術の欠点をなくし、アモルファ
ス半導体膜を用いて、かつ高速化が可卵な半導体装置を
提供することを目的とする、上記目的ｊ）搾成するため
の本発明の基本的な淘ｒｓけ、半導体装置に於て、γモ
ルファヌ半２ｎ体脇表面は多結晶化または単結晶化され
て成ることを特徴とする。
以下、実施例により本発明を詳述する。
ｐｌＬ１図は本発明の一吠流側を示す半導体装置の断面
図である。すなわち、ガラス基板１の表面にはアモルフ
ァスＳｉ層２、ＤアモルファスＲｉ　Ｍ　Ｒ面を遠紫外
線波長のエキシマ［株］レーザーによるレーザー・アニ
ールか、遠紫外線ランプによるランプ・アニールか、あ
るいは電子線アニール等により少なくともゲート下の極
めて薄い（１００Ａ〜１０００Ｘ）領域を単結晶化ある
いけ多結晶化しｆｃ、結晶化ＢｉＷｉ３を形成し、拡散
層４．５、フィールド酸化膜６、ゲート酸化膜７、ゲー
ト雷、僚８　、Ａ／１．’ｌｔＴ啄９等低温で形成して
、Ｍ　ＯＳ　Ｑｌｌ　Ｆ　Ｆ、Ｔ’としたものである。
本発明の如く、アモルファス半導体層の要部のごく表面
を結晶化することにより、＃、動度が１桁から２桁大と
なり、高速化できる効果がある。
本発明１、アモルファス半導体層を配線として書面のみ
ある（八け１（１Ｈ分的結晶化して＋１１いる場合にも
適用できる。
【図面の簡単な説明】
第１図は、本発明の一実施例を示−を半導体装置の断面
図である。 １・・・・・・ガラス基板 ２・・・・・・Ｉ′モルファス半導体膜３・・・・・・
結晶化層 ４．５・・・・・・拡散層 ６・・・・・フィールド酸化膜 ７・・・・・・ゲート酸化膜 ８・・・・・・〕メートｍ、＋０１ ９・・・・・ＡＩ電極 以　上 出願人　＆式会社　諏訪精工舎 代理人　弁理士　最上　務 第１図

Claims (1)

    【特許請求の範囲】
  1. アモルファス半導体Ｉｌ曇表面は多結晶化または単結晶
    化さｆｌてｎＶる事を特徴とする半導体装置。
JP21687183A 1983-11-17 1983-11-17 半導体装置 Pending JPS60109282A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21687183A JPS60109282A (ja) 1983-11-17 1983-11-17 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21687183A JPS60109282A (ja) 1983-11-17 1983-11-17 半導体装置

Publications (1)

Publication Number Publication Date
JPS60109282A true JPS60109282A (ja) 1985-06-14

Family

ID=16695216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21687183A Pending JPS60109282A (ja) 1983-11-17 1983-11-17 半導体装置

Country Status (1)

Country Link
JP (1) JPS60109282A (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347980A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH02143559A (ja) * 1988-11-25 1990-06-01 Mitsubishi Electric Corp イメージセンサおよびその製造方法
JPH04267563A (ja) * 1991-02-22 1992-09-24 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその製法
JPH05235357A (ja) * 1992-02-25 1993-09-10 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
JPH06291316A (ja) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
WO2001099199A1 (fr) * 2000-06-23 2001-12-27 Nec Corporation Transistor a couches minces et procede de production
US6352883B1 (en) 1991-02-22 2002-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182816A (ja) * 1982-04-20 1983-10-25 Toshiba Corp シリコン系半導体材料の再結晶方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182816A (ja) * 1982-04-20 1983-10-25 Toshiba Corp シリコン系半導体材料の再結晶方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347980A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 薄膜トランジスタの製造方法
JPH02143559A (ja) * 1988-11-25 1990-06-01 Mitsubishi Electric Corp イメージセンサおよびその製造方法
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
JPH04267563A (ja) * 1991-02-22 1992-09-24 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその製法
US6717180B2 (en) 1991-02-22 2004-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6352883B1 (en) 1991-02-22 2002-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH05235357A (ja) * 1992-02-25 1993-09-10 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JPH06291316A (ja) * 1992-02-25 1994-10-18 Semiconductor Energy Lab Co Ltd 薄膜状絶縁ゲイト型半導体装置およびその作製方法
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
WO2001099199A1 (fr) * 2000-06-23 2001-12-27 Nec Corporation Transistor a couches minces et procede de production
US7052944B2 (en) 2000-06-23 2006-05-30 Nec Corporation Thin-film transistor and method of manufacture thereof

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