KR930005167A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR930005167A
KR930005167A KR1019920014971A KR19960036300A KR930005167A KR 930005167 A KR930005167 A KR 930005167A KR 1019920014971 A KR1019920014971 A KR 1019920014971A KR 19960036300 A KR19960036300 A KR 19960036300A KR 930005167 A KR930005167 A KR 930005167A
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semiconductor device
lead
inorganic layer
contact
chip
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KR1019920014971A
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KR970001887B1 (en
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다카오 후지츠
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사토 후미오
가부시키가이샤 도시바
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Publication of KR970001887B1 publication Critical patent/KR970001887B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3164—Partial encapsulation or coating the coating being a foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49534—Multi-layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체장치의 제1실시예의 평면도,
제2도는 제1도에서 선 2-2'에 따른 단면도,
제3도는 각각 본 발명에 따른 반도체장치의 제2실시예와 제3실시예, 제4실시예, 제5실시예, 제6실시예, 제7실시예 및 제8실시예의 각각의 단면도.

Claims (19)

  1. 제1및 제2표면을 갖춘 반도체칩과, 상기 제1표면상의 다수의 전극, 칩주위에 배열되면서 각각 전극증 하나와 접촉되는 종단부를 갖춘 다수의 리드 및, 상기 반도체칩과 리드의 반대측에 위치하면서 각각상기 제1및 제2표면에 직접 접촉되는 제1및 제2막을 구비하여 구성된 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 리드를 지지하면서 상기 제1및 제2막 사이에 위치하는 리드 지지부재를 더 구비하여 구성된 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 리드 지지부재가 외부의 힘에 의해 어셈블리를 변형시키는 수단을 포함하고 있는 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 제1막이 무기물층과 이 무기물층에 접착된 접착층을 포함하고 있는 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 상기 무기물층상에 코팅된 보호층을 더 구비하여 이루어진 것을 특징으로하는 반도체장치.
  6. 제4항에 있어서, 상기 무기물층이 금속을 포함하고 있는 것을 특징으로하는 반도체장치.
  7. 제6항에 있어서, 상기 무기물상에 다수의 냉각 핀(fin)을 더 구비하여 이루어진 것을 특징으로 하는 반도체장치.
  8. 제6항에 있어서, 상기 무기물충이 주변부와 내부부를 포함하고 있고, 상기 주변부가 리드에 접착됨과 더불어 상기 내부부가 칩의 제1표면에 직접 접촉되도록 된 것을 특징으로 하는 반도체장치.
  9. 제6항에 있어서, 상기 리드중 하나를 상기 무기물층에 전기적으로 연결하기 위한 수단을 포함하고 있는 것을 특징으로 하는 반도체장치.
  10. 제9항에 있어서 상기 연결수단은 상기 무기물층과 리드중 하나를 접촉시키는 접착층을 통하는 도전부재를 포함하고 있는 것을 특징으로하는 반도체장치.
  11. 제10항에 있어서, 상기 도전부재가 도전성 도금으로 이루어진 것을 특징으로 하는 반도체장치.
  12. 제1항에 있어서, 상기 제2막이 무기물층과 이 무기물층에 접착된 접착층을 포함하고 있는 것을 특징으로하는 반도체장치.
  13. 제12항에 있어서, 상기 무기물층상에 코팅된 보호층을 더 구비하여 이루어진 것을 특징으로 하는 반도체장치.
  14. 제12항에 있어서, 상기 무기물층이 금속을 포함하고 있는 것을 특징으로 하는 반도체장치.
  15. 제14항에 있어서, 상기 무기물층이 주변부와 내부부를 포함하고 있고, 상기 주변부가 리드에 접착됨과 더불어 상기 내부부가 칩의 제2표면에 직접 접촉되도록 된 것을 특징으로 하는 반도체장치.
  16. 제14항에 있어서, 상기 리드중 하나를 상기 무기물층상에 전기적으로 연결하기 위한 수단을 포함하고 있는 것을 특징으로 하는 반도체장치.
  17. 제16항에 있어서, 상기 연결수단은 상기 무기물층과 리드중 하나를 접촉시키는 접착층을 통하는 도전부재를 포함하고 있는 것을 특징으로 하는 반도체장치.
  18. 제17항에 있어서, 상기 도전부재가 도전성 도금으로 이루어진 것을 특징으로 하는 반도체장치.
  19. 제1및 제2표면을 갖춘 제1반도체칩과, 제3및 제4표면을 갖춘 제2반도체칩, 상기 제1표면상의 제1및 제2전극, 상기 제3표면상의 제3및 제4전극, 상기 제1전극과 접촉되는 제1종단부를 갖춘 제1리드, 상기 제4전극과 접촉되는 제2종단부를 갖춘 제2리드, 상기 제2전극과 접촉되는 제3종단부와 상기 제3전극과 접촉되는 제4종단부를 갖춘 제3리드 및, 각각 상기 제1및 제3표면과 제2및 제4표면에 직접 접촉됨과 더불어 상기 제1및 제2반도체칩과 제1,제2,제3리드의 반대측에 위치하는 제1및 제2막을 구비하여 구성된 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR96036300A 1991-08-20 1992-08-20 Semiconductor device KR970001887B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP91-207087 1991-08-20
JP20708791 1991-08-20
KR1019920014971A KR960016239B1 (ko) 1991-08-20 1992-08-20 반도체장치

Publications (2)

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KR930005167A true KR930005167A (ko) 1993-03-23
KR970001887B1 KR970001887B1 (en) 1997-02-18

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KR1019920014971A KR960016239B1 (ko) 1991-08-20 1992-08-20 반도체장치
KR96036300A KR970001887B1 (en) 1991-08-20 1992-08-20 Semiconductor device

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KR1019920014971A KR960016239B1 (ko) 1991-08-20 1992-08-20 반도체장치

Country Status (5)

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US (3) US5448106A (ko)
EP (2) EP0689243B1 (ko)
JP (1) JP3061954B2 (ko)
KR (2) KR960016239B1 (ko)
DE (2) DE69217772T2 (ko)

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DE69217772T2 (de) 1997-07-10
US5448106A (en) 1995-09-05
KR970001887B1 (en) 1997-02-18
DE69231039D1 (de) 2000-06-15
EP0689243B1 (en) 2000-05-10
EP0528684A2 (en) 1993-02-24
EP0689243A3 (en) 1996-06-12
US5672908A (en) 1997-09-30
KR960016239B1 (ko) 1996-12-07
US5767572A (en) 1998-06-16
EP0528684A3 (en) 1993-05-05
JP3061954B2 (ja) 2000-07-10
JPH05198694A (ja) 1993-08-06
EP0528684B1 (en) 1997-03-05
EP0689243A2 (en) 1995-12-27
DE69217772D1 (de) 1997-04-10

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